JPH07192604A - Field emission type electron emitter - Google Patents

Abstract

PURPOSE:To improve electron emitting efficiency while preventing an emitter point end diameter from increasing and an emitter point end from melting destruction due to oxidation and sputtering. CONSTITUTION:A cone-shaped Si protrusion 2, for instance, provided on an Si (100) substrate 1 or the like and an organic metal compound film 3 provided so as to cover a surface of this protrusion 2 and selected from an organic silicon compound and organic germanium compound, chemically connected to a surface of the Si protrusion 2, are provided. Or a conductive compound, selected from an organic silicon high molecular compound, organic germanium high molecular compound and a fluorine compound, chemically connected to at least a point end part surface of the Si protrusion is provided.

Description

Detailed Description of the Invention

[0001]

FIELD OF THE INVENTION This invention relates to micro-sized field emission electron emitters.

[0002]

2. Description of the Related Art Micro-sized field emission electron emitters are attracting attention as high-density electron current sources used for micro electron tubes, thin displays, SEMs, vacuum pressure gauges, STMs, etc., and have high performance, high reliability, and high reliability. Research and development are underway with the aim of stabilization. Thermionic emission type, field emission type, and semiconductor type are known as electron emission mechanisms in micro-sized electron emitters. Among them, the micro-sized field emission type electron emitter emits electrons by an electric field from the tip of a micro-sized conical or polygonal pyramid shaped emitter.

A method of manufacturing the above-mentioned micro-sized field emission type electron emitter is as follows.
The following methods are commonly used. One is a method of producing a cone-shaped emitter by performing metal vapor deposition through a micro-sized mask hole. Another method is a method of producing a polygonal pyramid-shaped emitter by utilizing anisotropic etching of silicon, which is called the so-called Gray formula using such anisotropic etching of silicon. With the recent progress in semiconductor processing technology, emitters are
It has attracted attention because it is possible to simultaneously form a large number of emitters having a large area and a small tip diameter.

By the way, the most important factors that determine the field emission characteristics and life characteristics of a field emission electron emitter are the tip diameter of the emitter, its uniformity and durability. However, in the conventional field emission electron emitter as described above, the emission electron current density is likely to be saturated at a relatively small value, and thus the melting effect of the emitter tip is likely to occur due to the heating effect of the electron current concentrated at the emitter tip. It had a drawback. Further, there is a drawback that the tip diameter of the emitter is apt to increase due to oxidation or sputtering of the emitter surface even if it does not melt and break.

Further, in the conventional field emission type electron emitter, the tip diameter of the emitter is not always satisfactory, and in order to further improve the field emission efficiency, an emitter having a small diameter and a uniform tip is required. It has been demanded.

[0006]

As described above, the conventional field emission type electron emitter has a problem that the emitter tip diameter is increased or the emitter tip is melted and broken due to the oxidation or sputtering of the emitter surface. It was Further, the tip diameter of the emitter is not always satisfactory, and in order to further improve the field emission efficiency, a field emission type electron emitter having a minute diameter and a uniform tip is required.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a field emission type electron emitter in which the emitter tip diameter is prevented from increasing due to oxidation or sputtering, and the emitter tip is prevented from being melted and broken. Further, it is an object of the present invention to provide a field emission type electron emitter with improved electron emission efficiency.

[0008]

A first field emission type electron emitter according to the present invention covers a pyramidal projection made of either a conductor or a semiconductor provided on a substrate and a surface of the pyramidal projection. And an organometallic compound film selected from an organosilicon compound and an organogermanium compound chemically bonded to the surface of the conical protrusion.

The second field emission type electron emitter is
A pyramidal protrusion made of any one of a conductor and a semiconductor provided on a substrate, and selected from an organosilicon polymer compound, an organic germanium polymer compound and a fullerene compound chemically bonded to at least the tip surface of the pyramidal protrusion. And a conductive compound. In the field emission electron emitter of the present invention, the conical protrusions on the substrate are formed of a conductor such as Cr, Mo, TiC or a semiconductor such as Si. In addition, such an organometallic compound or an organometallic polymer compound (organosilicon polymer compound or organogermanium polymer compound) chemically bonded to the surface of the conical protrusion is an unsaturated bond of Si or Ge or a cyclic compound. An organic metal compound having a structure is used as a raw material, and such a raw material has the following general formula (1):
The one represented by or (2) is exemplified.

[0010]

[Chemical 1]

[Chemical 2] The fullerene compound used in the present invention is a carbon compound having a spherical structure having a carbon number of 60 or 70.

In the field emission type electron emitter according to the first invention, an organometallic compound having an unsaturated bond or a ring structure as described above is vaporized by heating under vacuum, and is cleaved on the surface of the conical protrusion to form a vapor phase. It has an organometallic compound film formed so as to cover the surface of the conical protrusion by chemically bonding to the surface of the conical protrusion by a reaction.

Since the organometallic compound film as described above has a form chemically bonded to the surface of the conical protrusion, it has a function of preventing oxidation or sputtering of the surface of the conical protrusion during electron emission. is doing. Further, the organometallic compound film itself does not hinder the emission of electrons from the emitter and, on the contrary, contributes to the improvement of field emission efficiency. The organometallic compound film may be in any form of an organometallic compound monomer, a multimer or a mixture thereof,
The film thickness of the organometallic compound film is sufficient if it is a monolayer or more.

In the field emission type electron emitter according to the second aspect of the present invention, the organometallic compound having an unsaturated bond or a ring structure as described above is vaporized by heating under vacuum, and is cleaved on the surface of the conical protrusion, It is chemically bonded to at least the tip surface of the conical protrusion by a gas phase reaction, and a linearly grown organometallic polymer compound or fullerene compound having conductivity is vaporized by heating under vacuum to form a conical shape. It has a conductive fullerene compound which is cleaved on the surface of the protrusion and chemically bonded to at least the tip surface of the conical protrusion by a gas phase reaction.

The above-mentioned organometallic polymer compound or fullerene compound having conductivity has a function as an emitter tip. For example, in a linearly grown organometallic polymer compound, Si or Ge is Those bonded in the range of about 5 to 50 are preferable. Further, such an organometallic polymer compound or a fullerene compound is chemically bonded to the entire surface of the conical protrusion, so that the surface of the conical protrusion is formed in the same manner as the organometallic compound film in the first invention described above. It has a function of preventing oxidation and sputtering.

The field emission type electron emitter of the present invention is manufactured, for example, as follows.

First, using a substrate such as a Si substrate, a pyramidal protrusion is formed by anisotropic etching of the Si substrate, for example, as in the conventional method. The method for producing the conical protrusion is not particularly limited, and various methods can be adopted. Next, the surface of the conical protrusion is cleaned by heat treatment or the like in high vacuum. That is, the oxide film, etching residue, etc. on the surface of the conical protrusion are removed.

When the organometallic polymer compound according to the second invention is bonded, for example, the surface of the conical protrusion is hydrogen-terminated. The termination of hydrogen on the surface of the conical protrusion can be performed by cleaning with ultrapure water, reaction with hydrogen radicals using a hydrogen plasma generator, or the like.

Next, the organometallic compound or the fullerene compound having an unsaturated bond or a cyclic structure as described above is vaporized by heating under vacuum, and is cleaved on the surface of the conical protrusion, and the conical protrusion surface is formed by a gas phase reaction. Chemically bond with an organometallic compound or a fullerene compound. Cleavage of the organometallic compound or fullerene compound, and the subsequent gas phase reaction with the conical protrusions, depending on the type and molecular structure of the compound used, generally spontaneously, 50 ~
By heating the substrate at about 300 ℃, or at a wavelength of 200 to 90
It is generated by irradiating with light of about 0 nm.

The organometallic compound film in the first invention is
The organometallic compound is chemically bonded to the entire surface of the conical protrusion by the vapor phase reaction. After forming this organometallic compound film, heat treatment is applied to make the tip of the emitter steeper, and if the oxide film such as SiO _{2 on the} surface is removed by, for example, etching, a similar organometallic compound film is not formed. The tip diameter of the emitter can be made smaller than in the case where heat treatment is performed. At this time, if the organometallic compound or the fullerene compound as described above is chemically bonded again to the surface of the pyramidal protrusion of the obtained emitter, it is possible to prevent oxidation or sputtering of the pyramidal protrusion surface at the time of electron emission. Needless to say.

In the second aspect of the present invention, in the organometallic polymer compound having conductivity, the organometallic compound bonded to at least the tip surface of the hydrogen-terminated conical protrusion as described above is represented by the following reaction formula ( According to 3), the fullerene compound grows linearly, and the fullerene compound is chemically bonded to at least the tip surface of the conical protrusion by the above gas phase reaction.

[0021]

[Chemical 3] It is also possible to further grow the linear organometallic polymer compound according to the second invention after forming the organometallic compound film according to the first invention. In this case, the first
A linear organometallic polymer compound grows at the site of the organometallic compound film according to the invention of FIG.

[0022]

The electron emission efficiency of the field emission electron emitter is determined by the electric field strength at the tip of the emitter. If the distance between the tip of the emitter and the anode is constant, the electric field strength is determined by the diameter of the tip and the boundary condition of the emitter surface.
The relationship between the tip diameter r of the electron emitter and the electric field strength F is generally F = 2V / {r × ln (2d / r)} (where V is the anode voltage, and d is the distance between the emitter and the anode). Yes).

As in the field emission electron emitter of the present invention, it is selected from organometallic compounds, organometallic polymer compounds and fullerene compounds in which the surface of the emitter (conical protrusion) is chemically bonded to a conductor or semiconductor which is a base material. When the emitter surface is covered with the conductive compound, it is possible to prevent oxidation of the emitter and increase the resistance of the emitter surface to sputtering. Therefore, it is possible to prevent an increase in the tip diameter of the emitter, and it is possible to stably obtain an emitter surface that does not have a substance that interferes with field emission such as an oxide film or an etching solution composition. It is possible to raise it.

Further, when the oxide film, the etching solution composition and the like as described above are present on the surface of the emitter, the field emission efficiency is lowered, the effective temperature of the tip of the emitter rises, and melting breakdown easily occurs. Become. On the other hand, as in the present invention, when the emitter surface is covered with a conductive compound selected from an organometallic compound chemically bonded to the conical protrusion, an organometallic polymer compound and a fullerene compound,
Since the field emission efficiency can be increased as described above, it is possible to prevent melt fracture. Furthermore, since the dangling bonds on the surface of the emitter, which are considered to be broken first when melt-fractured, are covered with the organometallic compound or the fullerene compound, resistance to melt-fracture can be improved.

Further, like the field emission type electron emitter of the second invention, when an electrically conductive organometallic polymer compound or fullerene compound is bonded to the tip of the emitter, these organometallic polymer compound or fullerene compound is bonded. Plays the role of an emitter tip, and therefore the effective tip diameter of the emitter can be reduced to the molecular level. As a result, the electron emission efficiency can be significantly improved.

[0026]

Embodiments of the present invention will be described below with reference to the drawings.

Example 1 FIG. 1 is a diagram schematically showing the structure of the field emission type electron emitter manufactured in this example. In the figure, 1 is S
It is an i (100) substrate, and a polygonal pyramidal Si protrusion 2 is provided on the Si (100) substrate 1. The Si protrusion 2 is a so-called gray type field emission electron emitter, and an organic metal compound film 3 selected from an organic silicon compound and an organic germanium compound is provided on the Si protrusion 2 so as to cover the surface thereof. ing. In addition, around the Si protrusion 2,
A SiO ₂ layer 4 is provided as an insulating layer, and a metal film such as a Cr film 5 to be a gate electrode is formed on the SiO ₂ layer 4. The field emission electron emitter is manufactured as follows. The manufacturing process of the field emission type electron emitter will be described with reference to FIG.

First, as shown in FIG. 2A, Si (100)
SiO _{2 as} a mask for anisotropic etching of Si on the substrate 1
The film 6 was patterned into a predetermined size. Then KO
An Si (100) substrate 1 was anisotropically etched using an etching solution composed of a mixture of H, H ₂ O and isopropyl alcohol to form quadrangular pyramidal Si protrusions (electron emitters) 2 (FIG. 2). -B). Next, Si including the SiO ₂ film 6
A SiO ₂ layer 4 was formed on the (100) substrate 1 by a vapor deposition method (FIG. 2-c). The thickness of the SiO ₂ layer 4 was set to be substantially equal to the height of the Si protrusion 2.

Next, a metal film, for example, a Cr film 5 to be a gate electrode was formed on the SiO ₂ layer 4 (FIG. 2-d). Then
An etching solution consisting of a mixed solution of dilute hydrofluoric acid and lactic acid.
The protrusion 2 is lightly etched and S on the Si protrusion 2
The iO ₂ film 6, the SiO ₂ layer 4 and the Cr film 5 were removed (Fig. 2-
e). Then, in a high vacuum of 1 × 10 ^-8 Torr or less, 550 ℃
The surface of the Si (100) substrate 1 including the Si protrusions 2 was cleaned by heating and heating as described above. After that, as shown in FIG. 2 (f), in a high vacuum of 1 × 10 ⁻⁷ Torr or less, a Si double bond represented by the following chemical formula (4) contained in the evaporation container 7 is formed. The organosilicon compound 8 was heated to 120 to 180 ° C. by the heater 9 to vaporize the organosilicon compound and to cause a vapor phase reaction on the surface of the Si (100) substrate 1 including the Si protrusions 2. In this way, the organometallic compound film 3 made of the organosilicon compound chemically bonded to the surface of the Si protrusion 2 was formed to obtain the intended field emission electron emitter.

In the above gas phase reaction, the Si (100) substrate 1 is heated and held at 200 to 300 ° C., and the wavelength of 254 to 600 nm is applied to the organic silicon compound raw material or the gas phase reaction surface.
Of light.

[0031]

[Chemical 4] The surface of the field emission electron emitter thus obtained is
When analyzed and evaluated by PS (ESCA-300; manufactured by Siesta), the organosilicon compound represented by the chemical formula (4) is cleaved by heat or the like, and a single organosilicon compound chemically bonded to the surface of the Si protrusion is detected. It was confirmed that a molecular film was formed.
Note that FIG. 3 schematically shows the bonding state of the monomolecular film of the organosilicon compound at this time.

Subsequently, as shown in FIG. 4, the field emission type electron emitter of this embodiment is placed in a vacuum of 1 × 10 ^-8 Torr, and the anode electrode 10 is placed at a position 100 μm from the gate electrode 5. Then, the life characteristics were evaluated. as a result,
Even after applying a gate voltage of 40 V for 6000 hours, a sufficient anode (collector) current was observed, which was almost the same as the initial value. On the other hand, for comparison, a similar characteristic evaluation was performed on the same field emission type electron emitter, except that the organosilicon compound was not vapor-phase reacted on the Si projection surface and the organometallic compound film was not formed. 40V gate voltage 60
The anode current after applying for 00 hours decreased to almost half of the initial value.

Further, a field emission type electron emitter having a monomolecular film of an organosilicon compound, which was produced in the same manner as described above, was placed in a high vacuum, and 950 to 1050 while introducing oxygen.
The Si (100) substrate was heated to ℃ to oxidize (form) the surface of the Si protrusion. This oxidation treatment is a treatment for reducing the emitter tip diameter by using the speed difference due to the stress at the emitter tip during Si oxidation.

After the above oxidation treatment, the tip diameter of the emitter is set to TE.
When measured by M, it was confirmed that the tip diameter of the emitter before the oxidation treatment was 50 nm, whereas the tip diameter of the emitter decreased to 5 nm after the oxidation treatment. As described above, the field emission efficiency can be improved by reducing the tip diameter of the emitter.

Examples 2 to 4 As shown in FIG. 5A, a SiO ₂ film 6 serving as a mask for anisotropic etching of Si was patterned on a Si (100) substrate 1 to a predetermined size. Then, the Si (100) substrate 1 was anisotropically etched using an etching solution composed of a mixed solution of KOH, H ₂ O and isopropyl alcohol to form a quadrangular pyramid-shaped Si projection (electron emitter) 2. Figure 5-
b). Then, on Si (100) substrate 1 including the top SiO ₂ film 8 was formed an SiO ₂ layer 4 by an evaporation method (Fig. 5-c).
The thickness of the SiO ₂ layer 4 was set to be substantially equal to the height of the Si protrusion 2.

Then, the tip of the Si protrusion 2 is subjected to forming (spearing) by exposing it to an oxygen atmosphere at 1000 ° C. for 25 minutes, and then a metal film to be a gate electrode, such as Cr, is formed on the SiO ₂ layer 4.
A film 5 was formed (Fig. 5-d). Then, the Si protrusions 2 are lightly etched with an etching solution composed of a mixed solution of dilute hydrofluoric acid and lactic acid, and the SiO ₂ film 6 and SiO
_{The second} layer 4 and the Cr film 5 were removed (FIG. 5-e).

Next, the exposed surface of the Si protrusion 2 was rinsed with ultrapure water, and the surface was terminated with hydrogen. Furthermore, 1 × 10
^The surface of the Si protrusion 2 was cleaned by heat treatment at 400 ° C. in a high vacuum of ^-8 Torr or less. Then, as shown in FIG. 5 (f), an organic compound having a cyclic structure of Si represented by the following chemical formula (5) contained in the evaporation container 7 in a high vacuum of 1 × 10 ⁻⁷ Torr or less. The silicon compound 8 is heated to 120 to 180 ° C. by the heater 9 to vaporize the organic silicon compound, and the Si projection 2
A gas phase reaction was carried out on the surface (Example 2).

[0038]

[Chemical 5] In the above gas phase reaction, the Si (100) substrate 1 has 20 to 1
The temperature was maintained at 50 ° C. and the organic silicon compound raw material or the gas phase reaction surface was irradiated with light having a wavelength of 254 to 600 nm. The organosilicon compound having a cyclic structure of Si is cleaved by heat or light, and thereby radicals are generated to chemically bond with a hydrogen-terminated site on the surface of the Si protrusion 2 and further perpendicular to the surface of the Si protrusion 2. In the direction, the organosilicon polymer compound grows based on the above reaction formula (3). In this Example 2, as shown in FIG. 6, it was confirmed by XPS that the organosilicon polymer compound grew vertically from the surface of the Si protrusion 2 to a length of about 50 nm.

Further, in the same manner as in Example 2, the shape of a quadrangular pyramid
Formation of Si protrusion 2, formation of SiO ₂ layer 4, forming of the tip of Si protrusion 2, formation of Cr film 5 to be a gate electrode, and Si
Light etching of the protrusion 2 and the SiO ₂ film 6, S on the Si protrusion 2
After performing the steps of removing the iO ₂ layer 4 and the Cr film 5, as shown in FIG.
As shown in (d), a structure was obtained in which the Si protrusion 2 was exposed and a Cr film 5 to be a gate electrode was formed on the side of the Si protrusion 2.

Next, in a high vacuum of 1 × 10 ^-8 Torr or less, 12
After heat treatment at 00 ℃ to clean the surface of Si protrusion 2, 1 ×
A fullerene compound having a carbon number of 60 was heated to 650 to 700 ° C. in a high vacuum of 10 ⁻⁸ Torr or less to vaporize the fullerene compound and cause a gas phase reaction on the surface of the Si protrusion 2 (Example 3). .

In the above gas phase reaction, the Si (100) substrate 1 was heated and maintained at 20 to 200 ° C. The fullerene compound is cleaved by heat and chemically bonded to the surface of the Si protrusion 2. In this Example 3, it is XP that the fullerene compound cleaved by heat is chemically bonded to the surface of the Si protrusion 2.
Confirmed by S. In this way, a field emission type electron emitter in which the fullerene compound chemically bonded to the surface of the Si protrusion 2 functions as an emitter tip was obtained.

Further, in the same manner as in Example 2, the formation of the quadrangular pyramidal Si protrusions 2, the formation of the SiO ₂ layer 4, the forming of the tips of the Si protrusions 2, the formation of the Cr film 5 serving as the gate electrode, and
Light etching of the Si protrusion 2 and the SiO ₂ film 6 on the Si protrusion 2,
Each step of removing the SiO ₂ layer 4 and the Cr film 5 is performed, and
As shown in (d), a structure was obtained in which the Si protrusion 2 was exposed and a Cr film 5 to be a gate electrode was formed on the side of the Si protrusion 2.

Next, in a high vacuum of 1 × 10 ^-8 Torr or less, 11
After heat treatment at 00 ℃ or more to clean the surface of Si protrusion 2,
First, in a high vacuum of 1 × 10 ^-8 Torr or less, the following chemical formula (6)
The organosilicon compound having a Si double bond structure represented by the formula (1) was heated to 120 to 180 ° C. to vaporize the organosilicon compound and to cause a gas phase reaction on the surface of the Si protrusion 2.

[0044]

[Chemical 6] In the above gas phase reaction, the Si (100) substrate 1 has 20 to 1
It is heated and maintained at 50 ° C, and the wavelength of 2
Irradiated with light of 54 to 600 nm. The organosilicon compound is cleaved by heat or light and chemically bonded to the surface of the Si protrusion 2 to form an organometallic compound film. In this example, it was confirmed by XPS that a monomolecular film of an organosilicon compound chemically bonded to the surface of the Si protrusion 2 was formed.

Further, following the vapor phase reaction of the organosilicon compound having the Si double bond structure, the above-mentioned chemical formula
The organosilicon compound having the Si ring structure shown in (5)
It was heated to 120 to 180 ° C. to be vaporized, and further subjected to a gas phase reaction (Example 4).

In this vapor phase reaction, the Si (100) substrate 1 was heated and maintained at 20 to 150 ° C., and the vapor phase reaction surface was irradiated with light having a wavelength of 254 to 600 nm. The organosilicon compound having a cyclic structure of Si is cleaved by heat or light to generate a radical, which is chemically bonded to a portion of the organometallic compound film on the surface of the Si protrusion 2 that is terminated by a tertiary butyl group, Furthermore, an organosilicon polymer compound grows in the direction perpendicular to the surface of the Si protrusion 2. In this Example 4, as shown in FIG. 7, it was confirmed by XPS that the organosilicon polymer compound grew vertically from the surface of the Si protrusion 2 to a length of about 50 nm.

Subsequently, the electron emission characteristics of each of the field emission electron emitters of Examples 2 to 4 described above were measured and evaluated as follows. As shown in FIG. 4, each field emission electron emitter was placed in a vacuum of 1 × 10 ⁻⁸ Torr, and the anode electrode 10 was placed at a position 100 μm from the gate electrode 10. Then, the anode (collector) current when the gate voltage was applied was measured. The results are shown in Table 1 as the relationship between the gate voltage and the anode current.

In the table, as a comparative example, the organosilicon compound or the fullerene compound was not subjected to the gas phase reaction, and the organosilicon polymer compound or the fullerene compound was not chemically bonded to the surface of the Si protrusion. The same measurement and evaluation results as for the field emission type electron emitter, which is exactly the same as in Example 2, are also shown.

[0049]

[Table 1] As is clear from Table 1, the organosilicon polymer compound or the fullerene compound chemically reacts on the surface of the Si protrusion as compared with the field emission type electron emitter of the comparative example in which the organosilicon compound or the fullerene compound is not subjected to the gas phase reaction. The combined field emission electron emitter of Example 3 is approximately 50 times, the field emission electron emitter of Example 4 is approximately 10 times, and Example 5
In the field emission type electron emitter, about 20 times the anode current flows. Therefore, it can be seen that the organosilicon polymer compound and the fullerene compound grown on the surface of the Si protrusion function as the tip of the emitter and have the effect of reducing the tip diameter of the emitter. That is, it is clear from the measurement results that the performance of the field emission type electron emitter can be greatly improved in each of the examples.

Further, in the field emission type electron emitter according to each embodiment, even in a low voltage region where the gate voltage is about 2 to 5V,
As shown in Table 1, an increase in the anode current can be confirmed, which greatly contributes to the realization of low voltage driving.

In each of the above embodiments, an example in which an organosilicon compound is used as the organometallic compound has been described, but the same effect can be obtained by using an organogermanium compound having a similar structure.

[0052]

As described above, according to the field emission type electron emitter of the present invention, it is possible to prevent the emitter tip diameter from increasing and the melting and breaking of the emitter tip due to oxidation and sputtering to be prevented, and to further improve the electron emission efficiency. It is possible to make a marked improvement. Therefore, it greatly contributes to the improvement of the life characteristics and field emission characteristics of the field emission type electron emitter.

[Brief description of drawings]

FIG. 1 is a sectional view showing a schematic configuration of a field emission electron emitter according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view showing a process of manufacturing a field emission electron emitter according to an embodiment of the present invention.

FIG. 3 is a diagram schematically showing a bonded state of a monomolecular film of an organosilicon compound on a Si protrusion surface in a field emission electron emitter according to an embodiment of the present invention.

FIG. 4 is a sectional view for explaining characteristic evaluation using a field emission electron emitter according to an embodiment of the present invention.

FIG. 5 is a cross-sectional view showing a process of manufacturing a field emission electron emitter according to another embodiment of the present invention.

FIG. 6 is a diagram schematically showing the bonding state of the organosilicon polymer compound on the Si protrusion surface in the field emission electron emitter according to one embodiment of the present invention.

FIG. 7 is a view schematically showing a bonding state of an organosilicon polymer compound on a Si protrusion surface in a field emission type electron emitter according to another embodiment of the present invention.

[Explanation of symbols]

 1 …… Si (100) substrate 2 …… Si protrusion 3 …… Organometallic compound film

Claims (2)

[Claims] 1. A pyramidal projection made of any one of a conductor and a semiconductor provided on a substrate, and organosilicon that is provided so as to cover the surface of the pyramidal projection and is chemically bonded to the surface of the pyramidal projection. A field emission electron emitter, comprising: an organic metal compound film selected from a compound and an organic germanium compound. 2. A pyramidal protrusion made of either a conductor or a semiconductor provided on a substrate, and an organosilicon polymer compound or an organogermanium polymer compound chemically bonded to at least the tip surface of the pyramidal protrusion. And a conductive compound selected from fullerene compounds.