JPH07161873A - Hybrid ic and its manufacture - Google Patents
Hybrid ic and its manufactureInfo
- Publication number
- JPH07161873A JPH07161873A JP30451293A JP30451293A JPH07161873A JP H07161873 A JPH07161873 A JP H07161873A JP 30451293 A JP30451293 A JP 30451293A JP 30451293 A JP30451293 A JP 30451293A JP H07161873 A JPH07161873 A JP H07161873A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- hybrid
- resin film
- substrate
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Landscapes
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明はハイブリッドIC及びそ
の製造方法に係り、特に表面実装型部品を半田実装した
プリント基板の表面に表面保護用の樹脂コーティングが
なされるハイブリッドIC及びその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a hybrid IC and a method of manufacturing the same, and more particularly to a hybrid IC in which a surface-protecting resin coating is applied to the surface of a printed circuit board on which surface-mounted components are solder-mounted and a method of manufacturing the same.
【0002】近年のハイブリッドICには、顧客によっ
てなされる装置基板への搭載に際し、搭載の効率化を図
るために、半田リフロー炉を用いた高温度における搭載
が要求されている。In recent years, hybrid ICs are required to be mounted by a customer at a high temperature using a solder reflow furnace in order to improve the mounting efficiency when mounted on a device substrate.
【0003】そこで上記ハイブリッドICにおいては、
上記装置基板への搭載に際しての半田リフロー処理中
に、IC内部の部品実装に用いた半田の溶融によって実
装部品の移動や剥脱等を発生させないために、部品が実
装されたハイブリッド基板の表面上を被覆樹脂(コーテ
ィング樹脂)で直に覆い、このコーティング樹脂膜の固
持力によって上記実装部品の移動や剥脱を防止する構造
が用いられている。Therefore, in the above hybrid IC,
During the solder reflow process at the time of mounting on the above-mentioned device substrate, in order to prevent the mounting components from moving or peeling due to melting of the solder used for mounting the components inside the IC, the surface of the hybrid substrate on which the components are mounted is A structure is used in which the mounting resin is directly covered with a coating resin and the mounting force of the coating resin film prevents the mounting component from moving or peeling.
【0004】しかしこの構造にも、上記リフロー時の高
温により溶融した部品実装用の半田が、上記コーティン
グ樹脂の密着不十分な個所や脆弱な個所を介して横方向
に流れ、隣接する部品や回路配線間を短絡するという問
題が発生するので改善が望まれている。However, in this structure as well, the solder for mounting the component, which is melted by the high temperature during the reflow, flows in the lateral direction through the insufficiently adhered portion or the fragile portion of the coating resin, thereby adjoining the adjacent component or circuit. Since the problem of short-circuiting between wirings occurs, improvement is desired.
【0005】[0005]
【従来の技術】表面実装型の実装部品が半田付けにより
実装されてなるハイブリッドICは、概略、図5の模式
断面図に示すように、所定の回路配線52を有するプリン
ト配線基板51上に、前記回路配線に接続する電極パッド
53と電極端子54を部品実装用半田55A によって半田付け
することによりFET56や抵抗57、コンデンサ58等が接
続実装され、この部品の実装されたプリント配線基板51
が、図示しない導電膜の形成されている下面を前記同様
の部品実装用半田55B で溶着することによって低熱抵抗
を維持して金属製の放熱容器59内に固着収容され、上記
部品実装がなされたプリント配線基板51上が、実装部品
の固持及び表面保護を目的としたシリコン樹脂等からな
る厚いコーティング樹脂膜60で覆われた後、前記放熱容
器59上に図示しない金属製のキャップが被せられて構成
されていた。2. Description of the Related Art A hybrid IC in which surface mounting type mounting components are mounted by soldering is schematically shown on a printed wiring board 51 having a predetermined circuit wiring 52, as shown in a schematic sectional view of FIG. Electrode pad connected to the circuit wiring
By soldering 53 and the electrode terminal 54 with the component mounting solder 55A, the FET 56, the resistor 57, the capacitor 58, etc. are connected and mounted, and the printed wiring board 51 on which this component is mounted 51
However, by fixing the lower surface on which a conductive film (not shown) is formed with the same component mounting solder 55B as described above, it is fixedly housed in the metal heat dissipation container 59 while maintaining low thermal resistance, and the above component mounting is performed. After the printed wiring board 51 is covered with a thick coating resin film 60 made of silicon resin or the like for the purpose of holding the mounted components and protecting the surface, a metal cap (not shown) is put on the heat dissipation container 59. Was configured.
【0006】このような構成を有するハイブリッドIC
において、従来、部品実装がなされたプリント配線基板
51上を覆って実装部品の固持及び表面保護の目的で形成
されるコーティング樹脂膜60は、前記部品の実装された
プリント配線基板51上に、そのままの状態で、液状のコ
ーティング樹脂を実装部品を埋める厚さに注下して塗布
し、そのまま所定のキュアー条件に加熱し該液状の樹脂
をキュアーし固化することにより形成されるので、固化
されたコーティング樹脂膜60は、実装部品56、57、58等
の表出面、これらの部品を固着している部品実装用半田
54A の表出面、及びプリント配線基板51の表出面の全域
に沿い、且つ直に付着して形成されていた。Hybrid IC having such a configuration
Printed wiring board on which components have been mounted in the past
The coating resin film 60, which is formed for the purpose of fixing the mounted components and protecting the surface of the mounted components, covers the printed wiring board 51 on which the components are mounted, and the liquid coating resin is mounted on the printed wiring substrate 51 as it is. It is formed by pouring to a filling thickness and applying it, and then heating it to a predetermined curing condition to cure and solidify the liquid resin, so that the solidified coating resin film 60 is mounted components 56, 57, Display surface of 58, etc., component mounting solder that adheres these components
It was formed along the entire exposed surface of 54A and the exposed surface of the printed wiring board 51, and was directly attached.
【0007】[0007]
【発明が解決しようとする課題】上記のように従来のハ
イブリッドICにおいては、部品が実装されたプリント
配線基板上を覆うコーティング樹脂膜60が実装部品56、
57、58等及び部品実装半田54A やプリント配線基板51の
表出面の全域に直に付着して形成されること、特に部品
実装半田54A の表出面の全域に直に付着して形成されて
いることによって、次のような問題を生じていた。As described above, in the conventional hybrid IC, the coating resin film 60 covering the printed wiring board on which the components are mounted has the mounting components 56,
57, 58, etc. and the component mounting solder 54A and the printed wiring board 51 should be formed by directly adhering to the entire exposed surface of the printed wiring board 51. In particular, it should be formed by directly adhering to the entire exposed surface of the component mounting solder 54A. This caused the following problems.
【0008】即ち、プリント配線基板上への部品を接続
固定する際に用いる部品実装用半田には、前述したよう
に部品の耐熱保証温度が低いことを考慮して溶融温度が
230〜240 ℃程度の普通半田を用いるが、一方このハイ
ブリッドICを装置基板上に搭載する際のリフロー炉に
よる半田リフロー処理においても、接続の信頼性を確保
するために低融点半田を用いずに前記同様の普通半田に
よる半田ペーストが用いられる。That is, as described above, the melting temperature of the component mounting solder used for connecting and fixing the component on the printed wiring board is low in consideration of the low heat resistance guarantee temperature of the component.
Ordinary solder with a temperature of 230 to 240 ° C is used, but in the solder reflow process in the reflow furnace when mounting this hybrid IC on the device substrate, the low melting point solder is not used to secure the connection reliability. The same solder paste as normal solder is used.
【0009】そのため、ハイブリッドICを装置基板上
に搭載するための上記半田リフロー処理に際して、ハイ
ブリッドIC内の実装部品を溶着している部品実装用半
田55A も完全に溶融し、且つ膨張する。Therefore, during the solder reflow process for mounting the hybrid IC on the device substrate, the component mounting solder 55A to which the mounted components in the hybrid IC are welded is also completely melted and expanded.
【0010】そして、図6に参照されるように、溶融し
且つ膨張した部品実装用半田55A は、密着力の弱いプリ
ント配線基板51とコーティング樹脂膜60との接着面を剥
離したり(61は剥離部)、また気泡等の存在により脆弱
化しているコーティング樹脂60の欠陥部(図示せず)を
突き破ることによって上記剥離部61や欠陥部(図示せ
ず)から流れ出して、その半田55A が隣接する部品例え
ば58A 、58B 間や図示しない隣接回路配線間をブリッジ
し、隣接部品間や回路配線間を短絡させるという問題で
ある。(図中、53A 、53B 、53C 、53D は電極パッド、
54A1、54A2、54B1、54B2は実装部品の電極端子)部品実
装用半田にリフロー用半田より高温の半田を用いること
によりこの問題のある程度の改善は可能であるが、その
場合、前述したように実装部品の耐熱保証温度が低いた
めに、ハイブリッドICの歩留りや信頼性の劣化が生ず
るので好ましくない。Then, as shown in FIG. 6, the melted and expanded component mounting solder 55A peels off the adhesive surface between the printed wiring board 51 and the coating resin film 60, which have a weak adhesion. Peeling portion), or a defective portion (not shown) of the coating resin 60 weakened by the presence of air bubbles or the like, so that the solder 55A flows out from the peeling portion 61 or the defective portion (not shown), The problem is that the parts to be connected, such as 58A and 58B, or adjacent circuit wirings (not shown) are bridged to short-circuit adjacent parts or circuit wirings. (In the figure, 53A, 53B, 53C, 53D are electrode pads,
54A 1 , 54A 2 , 54B 1 and 54B 2 are the electrode terminals of the mounted components) It is possible to improve this problem to some extent by using a higher temperature solder than the reflow solder for the component mounting solder. As described above, since the heat-resistant guaranteed temperature of the mounted components is low, the yield and reliability of the hybrid IC are deteriorated, which is not preferable.
【0011】そこで本発明は、ハイブリッドICを装置
基板に搭載する際の半田リフロー工程において、ハイブ
リッドIC内の部品実装に用いた半田が、溶融し、且つ
膨張した際にも、隣接部品間、隣接回路配線間等に半田
ブリッジを発生させることのないハイブリッドIC上の
コーティング(被覆)樹脂膜の構造及び形成方法を提供
することを目的とする。Therefore, according to the present invention, in the solder reflow process for mounting the hybrid IC on the device substrate, even when the solder used for mounting the components in the hybrid IC is melted and expanded, the adjacent components are adjacent to each other or adjacent to each other. An object of the present invention is to provide a structure and a method for forming a coating resin film on a hybrid IC that does not generate a solder bridge between circuit wirings.
【0012】[0012]
【課題を解決するための手段】上記問題点の解決は、表
面実装型の部品が半田を用い実装されたハイブリッド基
板の表面上に直に樹脂被覆がなされるハイブリッドIC
において、該被覆樹脂膜に、下端部が該実装部品を半田
付けしている部品実装半田上に接し上端部が該被覆樹脂
膜の表面に開口する半田退避孔が設けられている本発明
によるハイブリッドIC、若しくは、表面実装型の部品
が半田を用い実装されたハイブリッド基板の表面上に直
に樹脂被覆がなされるハイブリッドICにおいて、該実
装部品を半田付けしている部品実装半田と該被覆樹脂膜
との間に選択的に半田退避用の隙間が設けられている本
発明によるハイブリッドIC、若しくは、表面実装型の
部品が半田付けにより実装されたハイブリッド基板の全
面上を樹脂膜により被覆するに際して、該部品を該基板
に半田付けしている部品実装半田の表面上にピンの先端
部を上方から接触させた状態で該基板上に被覆用の樹脂
を注下して該基板上を該樹脂膜で覆い、次いで該樹脂膜
を固化した後、該ピンを引き抜いて該樹脂膜に該部品を
実装する半田上から該樹脂膜の表面に達する半田退避孔
を形成する工程を有する本発明によるハイブリッドIC
の製造方法、若しくは、表面実装型の部品が半田付けに
より実装されたハイブリッド基板の全面上を樹脂膜によ
り被覆するに際して、該基板上に被覆用の樹脂を注下し
て該基板上を該樹脂膜で覆った後、該基板を該半田が固
形状態を維持し得る該半田の溶融点近傍の温度に上昇さ
せた状態で該樹脂膜の固化を行い、次いで該基板を常温
に復帰させて該部品を実装する半田と該樹脂膜との間に
選択的に半田退避用の隙間を形成せしめる工程を有する
本発明によるハイブリッドICの製造方法によって達成
される。To solve the above-mentioned problems, a hybrid IC in which a resin is directly coated on the surface of a hybrid substrate on which surface mount type components are mounted using solder.
In the hybrid according to the present invention, the coating resin film is provided with a solder withdrawal hole whose lower end is in contact with a component mounting solder for soldering the mounting component and whose upper end is open to the surface of the coating resin film. In a hybrid IC in which an IC or a surface mount type component is directly resin-coated on the surface of a hybrid substrate mounted using solder, the component mounting solder and the coating resin film for soldering the mounted component When a hybrid IC according to the present invention in which a clearance for solder evacuation is selectively provided between or, and when a surface of a hybrid substrate on which a surface mount type component is mounted by soldering is covered with a resin film, The substrate is prepared by pouring a resin for coating onto the substrate with the tip of the pin in contact with the surface of the component mounting solder that is soldering the component to the substrate from above. With a resin film, and then solidifying the resin film, and then pulling out the pins to form solder retreat holes reaching from the solder for mounting the component to the resin film to the surface of the resin film. Hybrid IC according to the invention
In the method of manufacturing the same or when the entire surface of the hybrid substrate on which the surface mount type component is mounted by soldering is coated with a resin film, a resin for coating is poured on the substrate and the resin is coated on the substrate. After covering with a film, the resin film is solidified in a state in which the substrate is heated to a temperature near the melting point of the solder where the solder can maintain a solid state, and then the substrate is returned to room temperature to This can be achieved by the method for manufacturing a hybrid IC according to the present invention, which has a step of selectively forming a clearance for retreating the solder between the solder for mounting the component and the resin film.
【0013】[0013]
【作用】図1及び図2は、本発明の原理説明用断面図で
ある。本発明に係る第1の発明では、図1(a) に示すよ
うに、FETや抵抗、コンデンサ等からなる実装部品2
(2A、2B等)が、それらの電極端子3(3A1 、3A2 及び
3B1 、3B2 )等をハイブリッド基板1上の電極パッド4
(4A1 、4A2 及び4B1、4B2 等)に部品実装用半田5に
よって接続固定することにより実装されたハイブリッド
基板1の全面上を覆って厚く形成される被覆樹脂膜6
に、下端部が前記部品2(2A、2B等)を半田付けする部
品実装用半田5に接し、上端部が被覆樹脂膜6の表面に
開口する半田退避孔8(8A1 、8A2 及び8B1 、8B2 )等
を設ける。1 and 2 are sectional views for explaining the principle of the present invention. According to the first aspect of the present invention, as shown in FIG. 1 (a), a mounting component 2 including an FET, a resistor, a capacitor, etc.
(2A, 2B, etc.) have their electrode terminals 3 (3A 1 , 3A 2 and
3B 1 , 3B 2 ), etc. on the electrode pad 4 on the hybrid substrate 1
(4A 1 , 4A 2 and 4B 1 , 4B 2 etc.) is covered with the component mounting solder 5, and the covering resin film 6 is formed thickly to cover the entire surface of the mounted hybrid substrate 1
In addition, the lower end portion is in contact with the component mounting solder 5 for soldering the component 2 (2A, 2B, etc.), and the upper end portion is a solder retraction hole 8 (8A 1 , 8A 2 and 8B) opened on the surface of the coating resin film 6. 1 , 8B 2 ) etc. are provided.
【0014】このようにすることにより、後に当該ハイ
ブリッドICを装置基板上に搭載するに際しての半田リ
フロー時に溶融し且つ膨張したハイブリッドIC内の部
品実装用半田5は、図1(b) に示すように、前記の半田
退避孔8(8A1 、8A2 及び8B 1 、8B2 等)内へ溢れ出る
ので、溶融、膨張した半田5が被覆樹脂膜6に応力を及
ぼすことがなくなってその剥離や亀裂は回避され、これ
ら剥離部や亀裂部に該部品実装用半田5が流入して生ず
る隣接部品間或いは隣接回路配線間の半田ブリッジは防
止される。By doing this, the high
Solder remounting when mounting the Brid IC on the device substrate
The part in the hybrid IC that melts and expands during flow
As shown in Fig. 1 (b), the product mounting solder 5 is the solder
Evacuation hole 8 (8A1, 8A2And 8B 1, 8B2Etc.) overflows into
Therefore, the melted and expanded solder 5 exerts stress on the coating resin film 6.
This will prevent blistering, avoiding peeling and cracks.
The solder for mounting the component 5 does not flow into the peeling portion or the crack portion from
Prevents solder bridges between adjacent components or adjacent circuit wiring.
Be stopped.
【0015】また本発明に係る第2の発明では、図2
(a) に示すように、前記同様に部品2(2A、2B等)が実
装されたハイブリッド基板1の全面上を覆って厚く形成
される被覆樹脂膜6の、前記部品2(2A、2B等)をハイ
ブリッド基板1上に半田付けしている部品実装用半田5
の表出面と接する領域に選択的に半田退避用の隙間9を
設けておく。Further, in the second invention according to the present invention, FIG.
As shown in (a), the components 2 (2A, 2B, etc.) of the coating resin film 6 formed thickly covering the entire surface of the hybrid substrate 1 on which the components 2 (2A, 2B, etc.) are mounted in the same manner as described above. ) Is soldered on the hybrid board 1 for component mounting 5
A solder escape gap 9 is selectively provided in a region in contact with the exposed surface of the.
【0016】このようにすることにより、後に当該ハイ
ブリッドICを装置基板上に搭載するに際しての半田リ
フロー時に溶融し且つ膨張したハイブリッドIC内の部
品実装用半田5は、図2(b) に示すように、前記半田退
避用の隙間9内に収容されるので、該溶融膨張した半田
5が被覆樹脂膜6に及ぼす応力は減少し、該応力によっ
て被覆絶縁膜6に剥離や亀裂が発生するのが回避され
て、前記第1の発明同様に部品実装半田5による隣接部
品間或いは隣接回路配線間の半田ブリッジは防止され
る。By doing so, the component mounting solder 5 in the hybrid IC that is melted and expanded during solder reflow when the hybrid IC is mounted on the device substrate later is as shown in FIG. 2 (b). In addition, since the solder 5 is housed in the solder evacuation gap 9, the stress exerted by the melt-expanded solder 5 on the coating resin film 6 is reduced, and the coating insulating film 6 may be peeled or cracked by the stress. By avoiding, the solder bridge between adjacent components or adjacent circuit wiring due to the component mounting solder 5 is prevented as in the first aspect of the invention.
【0017】[0017]
【実施例】以下本発明を、図を参照し、製造方法の実施
例により具体的に説明する。図3は本発明の方法の一実
施例の工程断面図で、図4は本発明の方法の他の実施例
の工程断面図である。なお、全図を通じ同一対象物は同
一符合で示す。EXAMPLES The present invention will be described in detail below with reference to the drawings by the examples of the manufacturing method. 3 is a process sectional view of an embodiment of the method of the present invention, and FIG. 4 is a process sectional view of another embodiment of the method of the present invention. Note that the same object is denoted by the same reference numeral throughout the drawings.
【0018】図3(a) 参照 前記、第1の発明に係る構造の被覆(コーティング)樹
脂膜を有するハイブリッドICを形成するに際しては、
従来同様に、プリント配線基板(ハイブリッド基板)1
の表面の電極パッド4A1 、4A2 、及び4B1 、4B2 等上
に、例えば錫60:鉛40の組成を有し 230〜240 ℃程度の
融点を有する普通半田を部品実装半田に用い、上記半田
のリフロー手段によって、電極端子3A1 、3A2 、及び3B
1 、3B2 等をそれぞれ前記部品実装半田5A1 、5A2 、及
び5B1 、5B2 等によって半田付けすることにより、ハイ
ブリッド基板1上にFET、抵抗、コンデンサ等の何れ
かからなる実装部品2A、2B等を接続固定した後、先ずこ
の基板1上の、前記部品2A、2B等を固着している部品実
装半田5A1 、5A2 、及び5B1 、5B2 等上に、下端部(先
端部)が直に接するように上方からピン11A1、11A2、及
び11B1、11B2等を加圧接触させて保持する。なおこの
際、ピン11A1、11A2、及び11B1、11B2等の配置は予めハ
イブリッド基板1上の部品実装半田5A1 、5A2 、及び5B
1 、5B2 等の位置に合わせて規定され、且つ、それぞれ
のピンの上部に例えばコイルバネ等を挿入することによ
り高さ方向の移動を可能にし、接触を確実にする。Referring to FIG. 3 (a), in forming the hybrid IC having the coating resin film having the structure according to the first invention,
Printed wiring board (hybrid board) 1
Electrode pads 4A 1 of the surface, 4A 2, and 4B 1, 4B on the two equal, such as tin 60: using conventional solder having 230-240 ° C. of about the melting point having a composition of lead 40 to solder the component mounting, By the solder reflow means, the electrode terminals 3A 1 , 3A 2 , and 3B
1, the 3B 2, etc. Each component mounting solder 5A 1, 5A 2, and 5B 1, by soldering by 5B 2 or the like, FET on the hybrid substrate 1, the resistance, mounting parts 2A made of either such a capacitor , 2B etc. are connected and fixed, and then the lower end (tip) is first placed on the component mounting solders 5A 1 , 5A 2 and 5B 1 , 5B 2 etc. to which the above-mentioned components 2A, 2B etc. are fixed. The pins 11A 1 and 11A 2 and 11B 1 and 11B 2 and the like are pressed and held from above so as to directly contact each other. Note at this time, pin 11A 1, 11A 2, and 11B 1, component mounting solder 5A 1 on 11B 2 arrangement such as the pre-hybrid substrate 1, 5A 2, and 5B
1 , 5B 2 etc. are defined according to the position, and by inserting a coil spring or the like on the upper part of each pin, movement in the height direction is made possible and contact is ensured.
【0019】図3(b) 参照 次いで、上記のように部品実装半田5A1 、5A2 、及び5B
1 、5B2 等上にピン11A1、11A2、及び11B1、11B2等を加
圧接触させた状態で、このハイブリッド基板1の全面上
に、注下手段により、液状を有する熱硬化性の被覆樹脂
層例えばシリコン樹脂層106 を、実装部品2A、2B等を固
定し且つ保護するのに十分な例えば10〜30μm程度の厚
さに塗布形成する。Referring to FIG. 3 (b), the component mounting solders 5A 1 , 5A 2 and 5B are then mounted as described above.
1, pin 11A 1 on 5B 2, etc., 11A 2, and 11B 1, 11B 2 and the like in a state of pressure contact, over the entire surface of the hybrid substrate 1, the note under unit, thermoset having a liquid The coating resin layer such as the silicon resin layer 106 is applied and formed to a thickness of, for example, about 10 to 30 μm, which is sufficient for fixing and protecting the mounting components 2A, 2B and the like.
【0020】図3(c) 参照 次いで、例えば常温/1時間、70〜80℃/1時間、 140
℃/1時間等のステップキュアーを行い上記シリコン樹
脂層106 を固化させてシリコン樹脂からなる被覆樹脂膜
6を形成し、次いで前記ピン11A1、11A2、及び11B1、11
B2等を上方に引抜き、上記被覆樹脂膜6に、下端部が部
品実装半田5A1 、5A2 、及び5B1 、5B2等上に直に接
し、上端部が被覆樹脂6の表面に開口する半田退避孔8A
1 、8A2 、及び8B1 、8B2 等を形成する。なおここで、
ピン11A1、11A2、及び11B1、11B2等の表面に離型剤を薄
く塗布しておけば、樹脂膜6のキュアーを行った後のピ
ンの引抜きが容易になる。See FIG. 3 (c). Then, for example, room temperature / 1 hour, 70-80 ° C./1 hour, 140
The silicone resin layer 106 is solidified by performing a step cure such as ℃ / 1 hour to form the coating resin film 6 made of silicone resin, and then the pins 11A 1 , 11A 2 and 11B 1 , 11 are formed.
B 2 etc. is pulled out upward, the lower end directly contacts the component mounting solder 5A 1 , 5A 2 , and 5B 1 , 5B 2, etc. on the coating resin film 6 and the upper end opens on the surface of the coating resin 6. Solder evacuation hole 8A
1 , 8A 2 , and 8B 1 , 8B 2, etc. are formed. Here,
If the release agent is thinly applied to the surfaces of the pins 11A 1 and 11A 2 and 11B 1 and 11B 2 , the pins can be easily pulled out after the resin film 6 is cured.
【0021】以上の工程により形成される本発明の第1
の発明に係るハイブリッドICの被覆樹脂膜6は、図3
(c) に示すように、該被覆樹脂膜に、実装部品2A、2B等
をハイブリッド基板1上の電極パッド4A1 、4A2 、及び
4B1 、4B2 等上に半田付けしている部品実装半田5A1 、
5A2 、及び5B1 、5B2 等上に下端部が接し、且つ上端部
が被覆樹脂膜6の表面に開口する半田退避孔8A1 、8
A2 、及び8B1 、8B2 等を有する構造になる。従って、
当該ハイブリッドICを装置基板に搭載する際の、250
〜260 ℃程度の高温の半田リフロー処理において、IC
内部の部品実装半田が溶融膨張した際にも、半田の膨張
した分は、接して形成されている前記半田退避孔内に溢
れでる(図1(b) 参照)ので、前記膨張半田によって被
覆樹脂膜が応力を受けることがなくなる。そのため前記
膨張半田の応力に起因して従来生じていた被覆樹脂膜の
基板上からの剥離や被覆樹脂膜自体の亀裂の発生、また
それに伴う前記剥離部及び亀裂部への部品実装半田の流
れ込みによる隣接部品間あるいは隣接回路配線間の半田
ブリッジは防止される。The first aspect of the present invention formed by the above steps
The coating resin film 6 of the hybrid IC according to the invention of FIG.
As shown in (c), the mounting components 2A, 2B, etc. are attached to the coating resin film by electrode pads 4A 1 , 4A 2 on the hybrid substrate 1, and
Component mounting solder 5A 1 , which is soldered on 4B 1 , 4B 2, etc.
5A 2 and 5B 1 , 5B 2 etc. have their lower ends in contact with each other, and their upper ends open to the surface of the coating resin film 6 solder retreat holes 8A 1 , 8
The structure has A 2 , and 8B 1 and 8B 2 . Therefore,
250 when mounting the hybrid IC on the device substrate
In solder reflow process at high temperature up to 260 ℃, IC
Even when the internal component mounting solder melts and expands, the expanded part of the solder overflows into the solder evacuation hole formed in contact with the solder (see FIG. 1 (b)). The membrane is no longer stressed. Therefore, due to the peeling of the coating resin film from the substrate and the cracking of the coating resin film itself, which has conventionally occurred due to the stress of the expanded solder, and the flow of the component mounting solder to the peeling portion and the crack portion with it. Solder bridges between adjacent components or between adjacent circuit wiring are prevented.
【0022】図4(a) 参照 また、本発明の第2の発明に係る構造の被覆(コーティ
ング)樹脂膜を有するハイブリッドICを形成するに際
しては、従来同様に、プリント配線基板(ハイブリッド
基板)1の表面の電極パッド4A1 、4A2 、及び4B1 、4B
2 等上に、半田リフロー手段を用いて、電極端子3A1 、
3A2 、及び3B1 、3B2 等をそれぞれ部品実装半田5A1 、
5A2 、及び5B1 、5B2 等によって半田付けすることによ
り、FET、抵抗、コンデンサ等の何れかからなる実装
部品2A、2B等を接続固定した後、このハイブリッド基板
1の全面上に、注下手段により、例えば前記実施例同様
の液状を有するシリコン樹脂層を実装部品2A、2B等を固
定し且つ保護するのに十分な例えば10〜30μm程度の厚
さに塗布形成し、次いで70〜80℃の温度で前記シリコン
樹脂層に含まれる溶剤を乾燥除去し、次いでこのハイブ
リッド基板1を部品実装半田が固形状態を維持し得る半
田の融点に近い温度、例えば 200〜220 ℃程度に維持さ
れたヒータ12上に載置し、この温度で前記シリコン樹脂
層をキュアーして部品2A、2B等の実装されたハイブリッ
ド基板1上を覆う表面被覆用のシリコン樹脂膜6を形成
する。なお、この図における部品実装半田5A1 、5A2 、
及び5B 1 、5B2 等は、上記温度で膨張した状態が示され
ている。See FIG. 4 (a). Also, the coating of the structure according to the second aspect of the present invention (coating
When forming a hybrid IC having a resin film
In the same way as before, the printed wiring board (hybrid
Substrate) 1 surface electrode pad 4A1, 4A2, And 4B1, 4B
2Etc., using solder reflow means, the electrode terminal 3A1,
3A2, And 3B1, 3B25A each for component mounting solder1,
5A2, And 5B1, 5B2By soldering with
, FET, resistor, capacitor, etc.
After connecting and fixing parts 2A, 2B, etc., this hybrid board
1. On the entire surface of 1, by the pouring means, for example, as in the above embodiment
The liquid silicone resin layer is used to mount components 2A, 2B, etc.
Thick enough to set and protect, eg about 10-30 μm
And then apply it to the silicon at a temperature of 70-80 ℃.
The solvent contained in the resin layer is removed by drying, and the hive is then removed.
The lid substrate 1 is a semi-mountable component mounting solder that can maintain a solid state.
Maintained at a temperature close to the melting point of the rice field, for example, 200 to 220 ℃
Placed on the heated heater 12, the silicon resin
The layers are cured and the hybrids with components 2A, 2B, etc. mounted are mounted.
A silicon resin film 6 for covering the surface of the printed circuit board 1
To do. Note that the component mounting solder 5A in this figure1, 5A2,
And 5B 1, 5B2Etc. show the expanded state at the above temperature
ing.
【0023】図4(b) 参照 次いで、上記ハイブリッド基板1を常温に冷却する。こ
の常温への冷却によって、膨張していた部品実装半田5A
1 、5A2 、及び5B1 、5B2 等は収縮し、これら部品実装
半田5A1 、5A2 、及び5B1 、5B2 等とその上部を被覆す
るシリコン樹脂膜6との間に溶融膨張した部品実装半田
の大部分が収容できる大きさの半田退避用の隙間9A1 、
9A2 、及び9B1 、9B2 等が形成される。Next, referring to FIG. 4 (b), the hybrid substrate 1 is cooled to room temperature. 5A of component mounting solder that had expanded due to this cooling to room temperature
1 , 5A 2 , 5B 1 , 5B 2 etc. contracted and melted and expanded between these component mounting solders 5A 1 , 5A 2 and 5B 1 , 5B 2 etc. and the silicon resin film 6 covering the upper part thereof. Solder escape gap 9A 1 , large enough to accommodate most of the component mounting solder,
9A 2 , 9B 1 , 9B 2, etc. are formed.
【0024】以上の工程により形成される本発明の第2
の発明に係るハイブリッドICの被覆樹脂膜6は、図4
(b) に示すように、部品実装半田5A1 、5A2 、及び5
B1 、5B 2 等と被覆樹脂膜6との間に溶融膨張した部品
実装半田の大部分が収容できる半田退避用の隙間9A1 、
9A2 、及び9B1 、9B2 等を有する構造になる。従って、
当該ハイブリッドICを装置基板に搭載する際の、 250
〜260 ℃程度の高温の半田リフロー処理において、IC
内部の部品実装半田が溶融膨張した際にも、半田は上記
隙間9A1 、9A2 、及び9B1 、9B2 等内を満たして膨張す
るので、該膨張半田にって被覆樹脂膜6に及ぼされる応
力は従来に比べ大幅に減少し、前記実施例による場合と
同様に、膨張半田の応力に起因して従来生じていた被覆
樹脂膜の基板上からの剥離や被覆樹脂膜自体の亀裂の発
生、またそれに伴う前記剥離部及び亀裂部への部品実装
半田の流れ込みによる隣接部品間あるいは隣接回路配線
間の半田ブリッジは防止される。The second aspect of the present invention formed by the above steps
The coating resin film 6 of the hybrid IC according to the invention of FIG.
As shown in (b), component mounting solder 5A1, 5A2, And 5
B1, 5B 2Parts that have been melt-expanded between the etc. and the coating resin film 6
Solder evacuation gap 9A that can accommodate most of the mounted solder1,
9A2, And 9B1, 9B2And so on. Therefore,
250 when mounting the hybrid IC on the device board
In solder reflow process at high temperature up to 260 ℃, IC
Even when the internal component mounting solder melts and expands, the solder
Gap 9A1, 9A2, And 9B1, 9B2Fills the inside etc. and expands
Therefore, the expansion solder is applied to the coating resin film 6.
The force is significantly reduced compared to the conventional case, and
Similarly, the coating that was previously caused by the stress of expanded solder
Peeling of the resin film from the substrate or cracking of the coated resin film itself
Parts mounting on the raw part and the peeling part and crack part accompanying it
Wiring between adjacent components due to solder flow or adjacent circuit wiring
Solder bridges between them are prevented.
【0025】[0025]
【発明の効果】以上説明のように本発明に係るハイブリ
ッドICにおいては、該ハイブリッドICを装置基板に
搭載する際の高温の半田リフロー処理において、溶融す
るハイブリッドIC内部の部品実装半田によりハイブリ
ッドIC内部の実装部品間或いは回路配線間等半田ブリ
ッジによる短絡が防止される。As described above, in the hybrid IC according to the present invention, the component mounting solder inside the hybrid IC melts during the high temperature solder reflow process when the hybrid IC is mounted on the device substrate. It is possible to prevent a short circuit due to a solder bridge such as between the mounted components or between the circuit wirings.
【0026】従って本発明によれば、ハイブリッドIC
を装置基板上に搭載する際の半田リフロー温度を上げて
実装効率を向上することが可能になると同時に、ハイブ
リッドICの装置基板上への実装の歩留りや信頼性の向
上が図れる。Therefore, according to the present invention, a hybrid IC
It is possible to raise the solder reflow temperature when mounting the IC on the device substrate and improve the mounting efficiency, and at the same time, improve the yield and reliability of mounting the hybrid IC on the device substrate.
【図1】 本発明の原理説明用断面図(その1)FIG. 1 is a sectional view for explaining the principle of the present invention (No. 1)
【図2】 本発明の原理説明用断面図(その2)FIG. 2 is a sectional view for explaining the principle of the present invention (No. 2)
【図3】 本発明の方法の一実施例の工程断面図FIG. 3 is a process sectional view of an embodiment of the method of the present invention.
【図4】 本発明の方法の他の実施例の工程断面図FIG. 4 is a process sectional view of another embodiment of the method of the present invention.
【図5】 従来のハイブリッドICの模式断面図FIG. 5 is a schematic cross-sectional view of a conventional hybrid IC
【図6】 従来の問題点を示す模式断面図FIG. 6 is a schematic cross-sectional view showing a conventional problem
1 ハイブリッド基板 2A、2B 実装部品 3A1 、3A2 、3B1 、3B2 電極端子 4A1 、4A2 、4B1 、4B2 電極パッド 5、5A1 、5A2 、5B1 、5B2 部品実装半田 6 被覆樹脂膜(シリコン樹脂膜) 7A1 、7A2 、7B1 、7B2 半田付け部 8A1 、8A2 、8B1 、8B2 半田退避孔 9、9A1 、9A2 、9B1 、9B2 半田退避用の隙間 11A1、11A2、11B1、11B2 ピン 12 ヒータ 106 液状のシリコン樹脂層1 Hybrid board 2A, 2B Mounted component 3A 1 , 3A 2 , 3B 1 , 3B 2 Electrode terminal 4A 1 , 4A 2 , 4B 1 , 4B 2 Electrode pad 5, 5A 1 , 5A 2 , 5B 1 , 5B 2 Component mounted solder 6 Covering resin film (silicon resin film) 7A 1 , 7A 2 , 7B 1 , 7B 2 Soldering part 8A 1 , 8A 2 , 8B 1 , 8B 2 Solder retraction hole 9, 9A 1 , 9A 2 , 9B 1 , 9B 2 Solder escape gap 11A 1 , 11A 2 , 11B 1 , 11B 2 pin 12 Heater 106 Liquid silicone resin layer
Claims (4)
実装されたハイブリッド基板(1) の表面上に直に樹脂被
覆がなされるハイブリッドICにおいて、該被覆樹脂膜
(6) に、下端部が該実装部品(2) を半田付けしている部
品実装半田(5) 上に接し上端部が該被覆樹脂膜(6) の表
面に開口する半田退避孔(8) が設けられていることを特
徴とするハイブリッドIC。1. A hybrid IC in which a resin is directly coated on the surface of a hybrid substrate (1) on which a surface mount type component (2) is mounted using solder (5).
In (6), the lower end is in contact with the component mounting solder (5) to which the mounting component (2) is soldered, and the upper end is a solder withdrawal hole (8) opened on the surface of the coating resin film (6). A hybrid IC characterized by being provided with.
実装されたハイブリッド基板(1) の表面上に直に樹脂被
覆がなされるハイブリッドICにおいて、該実装部品
(2) を半田付けしている部品実装半田(5) と該被覆樹脂
膜(6) との間に選択的に半田退避用の隙間(9) が設けら
れていることを特徴とするハイブリッドIC。2. A hybrid IC in which a resin is directly coated on the surface of a hybrid board (1) on which a surface mount type component (2) is mounted using solder (5).
A hybrid IC characterized in that a clearance (9) for solder retraction is selectively provided between the component mounting solder (5) to which (2) is soldered and the coating resin film (6). .
されたハイブリッド基板の全面上を樹脂膜により被覆す
るに際して、該部品を該基板に半田付けしている部品実
装半田の表面上にピンの先端部を上方から接触させた状
態で該基板上に被覆用の樹脂を注下して該基板上を該樹
脂膜で覆い、次いで該樹脂膜を固化した後、該ピンを引
き抜いて該樹脂膜に該部品を実装する半田上から該樹脂
膜の表面に達する半田退避孔を形成する工程を有するこ
とを特徴とするハイブリッドICの製造方法。3. When covering the entire surface of a hybrid board on which a surface mount type component is mounted by soldering with a resin film, a pin is formed on the surface of the component mounting solder that is soldering the component to the board. A resin for coating is poured onto the substrate with the tip portion in contact with the substrate from above, the substrate is covered with the resin film, and then the resin film is solidified, and then the pin is pulled out to remove the resin film. A method of manufacturing a hybrid IC, comprising the step of forming a solder withdrawal hole that reaches the surface of the resin film from above the solder on which the component is mounted.
されたハイブリッド基板の全面上を樹脂膜により被覆す
るに際して、該基板上に被覆用の樹脂を注下して該基板
上を該樹脂膜で覆った後、該基板を該半田が固形状態を
維持し得る該半田の溶融点近傍の温度に上昇させた状態
で該樹脂膜の固化を行い、次いで該基板を常温に復帰さ
せて該部品を実装する半田と該樹脂膜との間に選択的に
半田退避用の隙間を形成せしめる工程を有することを特
徴とするハイブリッドICの製造方法。4. When covering the entire surface of a hybrid substrate on which a surface mount type component is mounted by soldering with a resin film, a resin for coating is poured on the substrate to form the resin film on the substrate. , The resin film is solidified in a state in which the substrate is heated to a temperature in the vicinity of the melting point of the solder that can maintain the solid state of the solder, and then the substrate is returned to room temperature to remove the component. A method of manufacturing a hybrid IC, comprising a step of selectively forming a clearance for retreating the solder between the solder for mounting the solder and the resin film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30451293A JPH07161873A (en) | 1993-12-06 | 1993-12-06 | Hybrid ic and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP30451293A JPH07161873A (en) | 1993-12-06 | 1993-12-06 | Hybrid ic and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07161873A true JPH07161873A (en) | 1995-06-23 |
Family
ID=17933931
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP30451293A Withdrawn JPH07161873A (en) | 1993-12-06 | 1993-12-06 | Hybrid ic and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07161873A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013026234A (en) * | 2011-07-14 | 2013-02-04 | Mitsubishi Electric Corp | Semiconductor device |
-
1993
- 1993-12-06 JP JP30451293A patent/JPH07161873A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013026234A (en) * | 2011-07-14 | 2013-02-04 | Mitsubishi Electric Corp | Semiconductor device |
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