JPH07159807A - Active matrix liquid crystal display device - Google Patents

Active matrix liquid crystal display device

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Publication number
JPH07159807A
JPH07159807A JP30498593A JP30498593A JPH07159807A JP H07159807 A JPH07159807 A JP H07159807A JP 30498593 A JP30498593 A JP 30498593A JP 30498593 A JP30498593 A JP 30498593A JP H07159807 A JPH07159807 A JP H07159807A
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JP
Japan
Prior art keywords
liquid crystal
film
electrode
crystal display
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP30498593A
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Japanese (ja)
Inventor
Katsumi Kondo
Toru Sasaki
Masaru Takahata
亨 佐々木
克己 近藤
勝 高畠
Original Assignee
Hitachi Ltd
株式会社日立製作所
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Application filed by Hitachi Ltd, 株式会社日立製作所 filed Critical Hitachi Ltd
Priority to JP30498593A priority Critical patent/JPH07159807A/en
Publication of JPH07159807A publication Critical patent/JPH07159807A/en
Application status is Pending legal-status Critical

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Abstract

PURPOSE: To obtain a film structure to efficiently apply an electric field on a liquid crystal layer in a liquid crystal display device of a transverse electric field system by using tantalum oxide (Ta2O5) having high relative dielectric const. as a protective film of a pixel electrode.
CONSTITUTION: The pixel part consists of a glass substrate 1 in a TFT side, scanning electrode (Cr) 2, gate insulating film (silicon nitride film) 3, semiconductor film (amorphous silicon film) 4, signal electrode (Cr) 5, pixel electrode (Cr) 6, protective film 7 for the pixel electrode, lower oriented film 8, liquid crystal layer 9, upper oriented film 10, counter electrode (Cr) 11, and counter glass substrate 12. In this film structure, tantalum oxide (Ta2O5) having rather high relative dielectric const. is used for the protective layer 7 of the pixel electrode. Since tantalum oxide has high relative dielectric const. as 23 to 27, reduction of voltage in the tantalum oxide film is decreased, and thereby, an electric field can be efficiently applied on the liquid crystal layer. As a result, the response speed is improved and the display quality of the liquid crystal display is improved.
COPYRIGHT: (C)1995,JPO

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、低コストで高画質のアクティブマトリクス型液晶表示装置に関する。 The present invention relates to an active matrix type liquid crystal display device of high image quality at low cost.

【0002】 [0002]

【従来の技術】従来のアクティブマトリクス型液晶表示装置では、液晶組成物層を駆動する電極として二枚の基板界面上に形成し相対向させた透明電極を用いていた。 In a conventional active matrix type liquid crystal display device, it has been used a transparent electrode was formed was facing the two substrates on the interface as an electrode for driving the liquid crystal composition layer.
これは、液晶組成物層に印加する電界の方向を基板界面にほぼ垂直な方向とすることで動作する、ツイステッドネマチック(TN)表示方式に代表される表示方式を用いている理由によるものである。 This is due to the reason that using a display method in the direction of the electric field applied to the liquid crystal composition layer works by a direction substantially perpendicular to the substrate interface, typified by twisted nematic (TN) display mode . 以下、液晶組成物層に印加する主たる電界方向が基板界面にほぼ垂直な方向である表示方式を縦電界方式と称する。 Hereinafter, the principal direction of the electric field applied to the liquid crystal composition layer is referred to as a vertical electric field mode the display system is substantially perpendicular to the substrate interface.

【0003】また、一方の基板上に形成した櫛歯状電極対を用いて液晶組成物層に電界を印加する方式が、例えば、特公昭63−21907 号公報により提案されている。 [0003] method of applying an electric field to the liquid crystal composition layer using a comb-shaped electrode pairs formed on one substrate, for example, has been proposed by JP-B 63-21907. ここで言う櫛歯状電極対は、図5中の32,33で示すような櫛の歯のような形状を有する二つの電極を互いの歯の部分が重ならずに噛み合うように配置したものである。 Here interdigital electrode pair to say, those arranged to engage the two electrodes having a shape like comb teeth, as indicated by 32 and 33 in FIG. 5 without overlapping the portion of each other of the tooth it is. この場合、液晶組成物層を駆動する電極は透明である必要はなく、不透明な金属電極を用いることができる。 In this case, electrodes for driving the liquid crystal composition layer is not required to be transparent, it is possible to use an opaque metal electrode. 以下、液晶組成物層に印加する主たる電界方向が基板界面にほぼ平行な方向である表示方式を横電界方式と称する。 Hereinafter, the principal direction of the electric field applied to the liquid crystal composition layer is referred to as a horizontal electric field type display method, which is a direction substantially parallel to the substrate surface. ここで、横電界方式は縦電界方式と比べて視角が拡大されるので、高画質が得られる。 The horizontal electric field method because the viewing angle compared to the vertical electric field method is enlarged, high image quality is obtained. これは、横電界方式では液晶分子の長軸は基板と常にほぼ平行であり、 This is the long axes of liquid crystal molecules in the horizontal electric field method is always substantially parallel to the substrate,
立ち上がることがなく、従って視角方向を変えた時の明るさの変化が小さい理由による。 Without rising, therefore reasons change in brightness is small when changing the viewing angle direction.

【0004】 [0004]

【発明が解決しようとする課題】上記横電界方式では、 In the horizontal electric field method [0007] is,
10″クラスの液晶ディスプレイを考慮した場合、画素電極と対向電極との距離が数十μmにもなるため、液晶層に効率よく電界を印加することが重要であるが、従来技術では、この点に考慮されていなかった。通常、画素電極/対向電極間に印加される電圧V SBは、画素電極の保護膜,配向膜間で電圧降下が生じるため、液晶層に印加される電圧はV SBよりも低くなる。特に、従来、画素電極の保護膜として用いられている窒化シリコン膜は比誘電率は6〜7と低いため、窒化シリコン膜間で生じる電圧降下は大きくなる。本発明の目的は横電界方式の液晶表示装置で、液晶層に効率よく電界を印加するための膜構成を提供することにある。なお、これまで主に用いられている縦電界方式の液晶表示装置では、画素電極と対向電極との距離 10 "when considering the liquid crystal display of the class, the distance between the pixel electrode and the counter electrode also becomes several tens [mu] m, it is important to efficiently apply a electric field to the liquid crystal layer, in the prior art, this point has not been considered in. Usually, the voltage V SB applied between the pixel electrode / counter electrode, because the protective film of the pixel electrode, the voltage drop between the alignment film occurs, a voltage applied to the liquid crystal layer is V SB lower than. in particular, the purpose of conventional, for low and 6-7 silicon nitride film is a dielectric constant which is used as a protective film for the pixel electrode, a voltage drop that occurs between the silicon nitride film is increased. the present invention in a horizontal electric field liquid crystal display device is to provide a film structure for applying efficiently electric field to the liquid crystal layer. Incidentally, heretofore in the liquid crystal display device of vertical electric field type which is mainly used, the pixel the distance between the electrode and the counter electrode 10μm以下なので、前述の問題点は無視できる。 Since 10μm a following, the problem described above can be ignored.

【0005】 [0005]

【課題を解決するための手段】上記目的を達成するため、本発明は少なくとも一方が透明な一対の基板と、前記基板間に挟持された液晶組成物層と、前記基板のいずれか一方の基板の向き合った表面にマトリクス状に配置された複数の走査配線および信号配線と、対をなす画素電極と、前記画素電極,前記走査配線および前記信号配線に接続されたアクティブ素子と、前記各走査配線に接続された走査配線駆動手段と、前記各信号配線に接続された信号配線駆動手段とを備えた液晶表示装置で、前記対をなす画素電極が短冊状の形状であり、その一方の電極の長辺方向が他方の電極の長辺方向とほぼ平行であって、外部モジュールとの接続端子部以外の前記走査配線および前記信号配線,前記画素電極,アクティブ素子はタンタルオキサイド To achieve the above object, according to an aspect of the present invention is at least one of the pair of transparent substrates, and a liquid crystal composition layer sandwiched between the substrates, either one of the substrate board a plurality of scanning lines and signal lines arranged in a matrix on the surface of opposed, and the pixel electrodes in a pair, the pixel electrode, an active element connected to the scanning wiring and the signal wiring, the respective scanning lines a scanning line drive means connected to said liquid crystal display device and a connected signal line drive means to each of the signal lines, the pixel electrodes forming the pair is a strip-like shape, its one electrode the long side direction is substantially parallel with a longer side direction of the other electrode, the scanning wiring and the signal wiring other than the connection terminal portion with the external module, the pixel electrode, the active element tantalum oxide Ta 25 )で覆われている。 Are covered with Ta 2 O 5).

【0006】 [0006]

【作用】上記膜構成では、画素電極の保護膜にタンタルオキサイド(Ta 25 )を用いている。 [Action] In the above film structure, using a tantalum oxide (Ta 2 O 5) in the protective layer of the pixel electrode. ここで、タンタルオキサイドの比誘電率は23〜27と高いため、タンタルオキサイド膜間で生じる電圧降下は小さくなる。 Since high dielectric constant of tantalum oxide and 23 to 27, the voltage drop is small occurring between the tantalum oxide film. したがって、液晶層に効率よく電界を印加することが可能になる。 Therefore, it becomes possible to efficiently apply a electric field to the liquid crystal layer. 本発明では画素電極の保護膜にタンタルオキサイド(Ta 25 )を用いるため、液晶層に効率よく電界を印加することができ、その結果、応答速度が改善されるので液晶ディスプレイの表示品質が向上する。 Since the use of tantalum oxide in the protective layer of the pixel electrode in the present invention (Ta 2 O 5), it is possible to efficiently apply a electric field to the liquid crystal layer, so that the display quality of the liquid crystal display since the response speed is improved improves.

【0007】 [0007]

【実施例】図1は本発明を用いた場合の画素部の断面構造の実施例である。 DETAILED DESCRIPTION FIG. 1 shows an embodiment of the sectional structure of a pixel portion in the case of using the present invention. 図中で、1はTFT側ガラス基板、 In the figure, 1 is TFT-side glass substrate,
2はCr(走査電極)、3は窒化シリコン膜(ゲート絶縁膜)、4は非晶質シリコン膜(半導体膜)、5はCr 2 Cr (scanning electrode), 3 denotes a silicon nitride film (gate insulating film), 4 amorphous silicon film (semiconductor film), 5 Cr
(信号電極)、6はCr(画素電極)、7はTa 2 (Signal electrodes), the Cr (pixel electrode) 6, 7 Ta 2 O
5 (画素電極の保護膜)、8は下部の配向膜、9は液晶層、10は上部の配向膜、11はCr(対向電極)、1 5 (protective film for the pixel electrode), 8 the lower portion of the alignment film, 9 a liquid crystal layer, an upper portion of the alignment film 10, 11 Cr (counter electrode), 1
2は対向ガラス基板、13は液晶に印加される電界の向きを示したものである。 2 opposing glass substrate, 13 shows the direction of the electric field applied to the liquid crystal. ここで、画素電極6,対向電極11間の電気的等価回路は図2に示すように、画素電極の保護膜の容量21/下部配向膜の容量22/液晶容量23/上部配向膜の容量24の直列容量になる。 Here, the electrical equivalent circuit between the pixel electrode 6, the counter electrode 11 as shown in FIG. 2, the capacitance of the capacitor 22 / liquid crystal capacitance 23 / upper alignment film of the capacitive 21 / lower alignment layer of the protective film of the pixel electrode 24 become of the series capacity. 本発明の膜構成では、画素電極の保護膜に比較的比誘電率の高いTa 2 O 5を用いている。 The film structure of the present invention uses a Ta 2 O 5 having a relatively high dielectric constant in the protective layer of the pixel electrode. ここで、タンタルオキサイドの比誘電率は23〜27と高いため、タンタルオキサイド膜間で生じる電圧降下は小さくなる。 Since high dielectric constant of tantalum oxide and 23 to 27, the voltage drop is small occurring between the tantalum oxide film. したがって、液晶層に効率よく電界を印加することが可能になる。 Therefore, it becomes possible to efficiently apply a electric field to the liquid crystal layer. その結果、応答速度が改善されるので液晶ディスプレイの表示品質が向上する。 As a result, the display quality of the liquid crystal display is improved since the response speed is improved.

【0008】図3は本発明を用いた場合の画素部の平面パターンの実施例を示したものである。 [0008] Figure 3 illustrates an example of a plane pattern of the pixel portion in the case of using the present invention. 図中に示すように、画素電極6/対向電極11間に備えられている液晶層には、主に電界は基板界面にほぼ平行に印加される。 As shown in the figure, the liquid crystal layer is provided between the pixel electrode 6 / counter electrode 11, primarily electric field is substantially parallel to applied to the substrate surface.
また、図中には記載していないが、画素部全面にはタンタルオキサイドが走査配線および前記信号配線,画素電極,アクティブ素子の保護膜として、堆積している。 Although not shown in the drawing, the pixel portion entirely scanning wiring and the signal wiring tantalum oxide, the pixel electrode, as a protective film of the active element, is deposited.

【0009】図4は本発明を用いた場合の画素部の断面構造の第二実施例を示したものである。 [0009] FIG. 4 shows a second embodiment of the cross-sectional structure of a pixel portion in the case of using the present invention. 本実施例はアクティブ素子として金属/絶縁膜/金属から構成される薄膜ダイオードを用いた場合の実施例である。 This embodiment is an embodiment using a thin film diode configured as an active element of a metal / insulating film / metal. 本実施例でも、図中に示すように、タンタルオキサイド7を画素電極の保護膜として用いている。 Also in this embodiment, as shown in the figure, are used tantalum oxide 7 as a protective film for the pixel electrode. したがって、前述の理由により液晶層に効率よく電界を印加することが可能になる。 Therefore, it becomes possible to efficiently apply a electric field to the liquid crystal layer for the reasons described above. その結果、応答速度が改善されるので液晶ディスプレイの表示品質が向上する。 As a result, the display quality of the liquid crystal display is improved since the response speed is improved.

【0010】 [0010]

【発明の効果】本発明によれば、横電界方式の液晶表示装置で、画素電極の保護膜に高い比誘電率を有するタンタルオキサイド(Ta 25 )を用いる。 According to the present invention, in the liquid crystal display device of horizontal electric field mode, using a tantalum oxide (Ta 2 O 5) having a high dielectric constant in the protective layer of the pixel electrode. このことにより、画素電極の保護膜での電圧降下は小さくなるので、 Thus, the voltage drop is small with a protective film of the pixel electrode,
液晶層に効率よく電界を印加することができ、その結果、液晶ディスプレイの表示品質が向上する。 It can be applied efficiently electric field to the liquid crystal layer, so that the display quality of the liquid crystal display is improved.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の画素部の断面図。 Cross-sectional view of a pixel portion of the present invention; FIG.

【図2】画素電極,対向電極間の等価回路図。 [Figure 2] pixel electrode, an equivalent circuit diagram between the opposing electrodes.

【図3】本発明の画素部の平面パターンの説明図。 Figure 3 is an explanatory view of a planar pattern of the pixel portion of the present invention.

【図4】本発明の画素部の第二実施例の断面図。 Sectional view of a second embodiment of a pixel portion of the present invention; FIG.

【図5】従来の画素の説明図。 Figure 5 is an explanatory diagram of a conventional pixel.

【符号の説明】 DESCRIPTION OF SYMBOLS

1…TFT側ガラス基板、2…Cr(走査電極)、3… 1 ... TFT-side glass substrate, 2 ... Cr (scan electrode), 3 ...
窒化シリコン膜(ゲート絶縁膜)、4…非晶質シリコン膜(半導体膜)、5…Cr(信号電極)、6…Cr(画素電極)、7…Ta 25 (TFT保護膜)、8…配向膜、9…液晶、10…配向膜、11…Cr(対向電極)、12…対向ガラス基板、13…電界の向き。 Silicon nitride film (gate insulating film), 4 ... amorphous silicon film (semiconductor film), 5 ... Cr (signal electrodes), 6 ... Cr (pixel electrode), 7 ... Ta 2 O 5 (TFT protecting film), 8 ... alignment film, 9 ... LCD, 10 ... orientation film 11 ... Cr (counter electrode), 12 ... counter glass substrate, 13 ... electric field orientation.

Claims (2)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】少なくとも一方が透明な一対の基板と、前記基板間に挟持された液晶組成物層と、前記基板のいずれか一方の基板の向き合った表面にマトリクス状に配置された複数の走査配線および信号配線と、対をなす画素電極と、前記画素電極,前記走査配線および前記信号配線に接続されたアクティブ素子と、前記各走査配線に接続された走査配線駆動手段と、前記各信号配線に接続された信号配線駆動手段とを備えた液晶表示装置において、 前記対をなす画素電極が短冊状の形状であり、その一方の電極の長辺方向が他方の電極の長辺方向とほぼ平行であって、 外部モジュールとの接続端子部以外の前記走査配線および前記信号配線,前記画素電極,前記アクティブ素子はタンタルオキサイド(Ta 25 )で覆われていることを特 1. A at least one of a pair of substrates transparent, and a liquid crystal composition layer sandwiched between the substrates, a plurality of scan arranged in a matrix on the surface of opposed one of the substrate of the substrate the wiring and the signal wiring, and the pixel electrodes in a pair, the pixel electrode, wherein an active element connected to the scanning wiring and the signal wiring, a scanning line drive means connected to each of the scan lines, wherein the signal lines in the liquid crystal display device having connected a signal line driving means, the pixel electrodes forming the pair is a strip-like shape, substantially parallel long side of the one electrode is the long side direction of the other electrode a is, especially in that the scanning wiring and the signal wiring other than the connection terminal portion with the external module, the pixel electrode, the active element is covered with tantalum oxide (Ta 2 O 5) とするアクティブマトリクス型液晶表示装置。 Active matrix liquid crystal display device according to.
  2. 【請求項2】請求項1に記載の前記アクティブ素子が、 Wherein said active element according to claim 1,
    薄膜トランジスタ、あるいは金属/絶縁膜/金属で構成されるダイオードであるアクティブマトリクス型液晶表示装置。 TFT or metal / active matrix liquid crystal display device is a diode made of an insulating film / metal.
JP30498593A 1993-12-06 1993-12-06 Active matrix liquid crystal display device Pending JPH07159807A (en)

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