JPH07142382A - Substrate transporting device - Google Patents

Substrate transporting device

Info

Publication number
JPH07142382A
JPH07142382A JP5314370A JP31437093A JPH07142382A JP H07142382 A JPH07142382 A JP H07142382A JP 5314370 A JP5314370 A JP 5314370A JP 31437093 A JP31437093 A JP 31437093A JP H07142382 A JPH07142382 A JP H07142382A
Authority
JP
Japan
Prior art keywords
substrate
speed
transfer
glass substrate
transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5314370A
Other languages
Japanese (ja)
Other versions
JP3362487B2 (en
Inventor
Norio Kobayashi
教郎 小林
Norihiko Hara
典彦 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP31437093A priority Critical patent/JP3362487B2/en
Publication of JPH07142382A publication Critical patent/JPH07142382A/en
Application granted granted Critical
Publication of JP3362487B2 publication Critical patent/JP3362487B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To transport a substrate without danger of breakdown of a pattern, deposition of dust, etc., by discharge even when a charged substrate is transported. CONSTITUTION:A speed control means 7 which reduces the transporting speed of a first transporting means 12B or a second transporting means 12C is provided to reduce a relative speed of the first and second transporting means 12B, 12C when the first transporting means 12B which carries an untreated substrate from a substrate standing position to a treatment position and the second transporting means 12C which transports out a treated substrate from a treatment position to a substrate standing position pass each other. Thereby, even when a substrate is charged, it is possible to effectively avoid a danger of breakdown of a circuit pattern formed on a substrate due to discharge.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【目次】以下の順序で本発明を説明する。 産業上の利用分野 従来の技術（図３及び図４） 発明が解決しようとする課題 課題を解決するための手段（図１及び図２） 作用 実施例（図１及び図２） 発明の効果[Table of Contents] The present invention will be described in the following order. Field of Industrial Application Conventional Technology (FIGS. 3 and 4) Problem to be Solved by the Invention Means for Solving the Problem (FIGS. 1 and 2) Action Example (FIGS. 1 and 2) Effect of the Invention

【０００２】[0002]

【産業上の利用分野】本発明は基板搬送装置に関し、例
えばガラス基板のように帯電し易い基板を基板待機位置
から露光位置へ搬送する搬送装置に適用して好適なもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate transfer device, and is suitable for application to a transfer device for transferring a substrate which is easily charged, such as a glass substrate, from a substrate standby position to an exposure position.

【０００３】[0003]

【従来の技術】従来、この種の搬送装置では搬送過程や
露光工程の際に基板からの放電に起因したパターン破壊
等が問題になることがあつた。これは搬送過程や露光工
程において基板が帯電することがあるからであり、帯電
している基板から帯電していない基板等へ強い放電が生
じるためである。この様子を露光装置のうち搬送装置に
関する部分以外の構成を省略して表す図３を用いて説明
する。2. Description of the Related Art Conventionally, in this type of transfer apparatus, there have been problems such as pattern destruction due to discharge from the substrate during the transfer process or the exposure process. This is because the substrate may be charged in the carrying process or the exposure process, and a strong discharge occurs from the charged substrate to the uncharged substrate or the like. This situation will be described with reference to FIG. 3 in which the configuration of the exposure apparatus other than the portion related to the transport apparatus is omitted.

【０００４】この図に示す搬送装置１は基板収納カセツ
ト２と露光ステージ３との間でガラス基板４を搬送する
ものである。搬送装置１にはそれぞれ同じ速度で駆動さ
れる３つの搬送アーム５Ａ、５Ｂ及び５Ｃが用意されて
いる。これら３つの搬送アーム５Ａ〜５Ｃはそれぞれ図
４に示す３つの位置の間で基板４を受け渡しする。A transfer device 1 shown in this figure transfers a glass substrate 4 between a substrate storage cassette 2 and an exposure stage 3. The transfer device 1 is provided with three transfer arms 5A, 5B and 5C which are driven at the same speed. These three transfer arms 5A to 5C transfer the substrate 4 between the three positions shown in FIG.

【０００５】このうち搬送アーム５Ａは基板収納カセツ
ト２に相当する基板待機位置２Ａから露光ステージ３の
手前に用意された基板受渡位置６へガラス基板４を搬送
すると共に、基板受渡位置６にあるガラス基板４を基板
待機位置２Ａに搬送するのを担当している。また搬送ア
ーム５Ｂは基板受渡位置６に載置されたガラス基板４を
露光ステージ３の所定位置（すなわち基板露光位置３
Ａ）に搬送するのを担当している。残る搬送アーム５Ｃ
は露光が終了したガラス基板３を基板露光位置３Ａから
基板受渡位置６まで搬送するのを担当している。Of these, the transfer arm 5A transfers the glass substrate 4 from the substrate standby position 2A corresponding to the substrate storage cassette 2 to the substrate delivery position 6 prepared in front of the exposure stage 3 and the glass at the substrate delivery position 6 It is in charge of transporting the substrate 4 to the substrate standby position 2A. The transfer arm 5B moves the glass substrate 4 placed at the substrate transfer position 6 to a predetermined position of the exposure stage 3 (that is, the substrate exposure position 3).
Responsible for transportation to A). Remaining transfer arm 5C
Is responsible for transporting the exposed glass substrate 3 from the substrate exposure position 3A to the substrate delivery position 6.

【０００６】[0006]

【発明が解決しようとする課題】ところで露光時におい
て高精度の位置合わせが要求されるこの種の露光装置で
は露光ステージ３として平面度が特に高いことが要求さ
れ、露光ステージ３とガラス基板４とは高い密着度のも
と接触されるようになつている。しかし密着度が高いが
ために密着した状態にあるガラス基板４を露光ステージ
３から引きはがす際に帯電し易い。By the way, in this type of exposure apparatus that requires highly accurate alignment during exposure, it is required that the exposure stage 3 has a particularly high flatness, and the exposure stage 3 and the glass substrate 4 are Are contacted with high adhesion. However, since the adhesion is high, the glass substrate 4 in the adhered state is easily charged when peeled from the exposure stage 3.

【０００７】このようにガラス基板４が帯電すると搬送
中の搬送アーム５Ｃの電位は帯電したガラス基板４の電
位と同電位となり、未露光のガラス基板４を搬送中の搬
送アーム５Ｂの電位との間に電位差が生じることにな
る。そしてこのように電位の異なる２つの搬送アーム５
Ｂ、５Ｃがわずかな空間を挟んで高速ですれ違うとき、
帯電したガラス基板４から帯電していないガラス基板４
へ強い放電が生じるのである。When the glass substrate 4 is thus charged, the potential of the carrying arm 5C during carrying becomes the same as the potential of the charged glass substrate 4 and the potential of the carrying arm 5B during carrying the unexposed glass substrate 4. There will be a potential difference between them. The two transfer arms 5 having different potentials are thus
When B and 5C pass each other at a high speed across a small space,
Charged glass substrate 4 to non-charged glass substrate 4
A strong discharge occurs.

【０００８】またこの基板間の放電が生じるのは２つの
搬送アーム５Ｂ、５Ｃがすれ違う場合に限られるのでは
なく、搬送アーム５Ａによつて帯電したガラス基板４が
収納される場合にも生じる。これは限られた空間内にで
きる限り多くのガラス基板４を収納するために複数のガ
ラス基板４が狭い間隔で基板収納カセツト２内に収納さ
れていることによる。すなわち露光の終了後、帯電した
ガラス基板４が基板収納カセツト２に設けられた棚の１
つに搬入される際に隣接する棚に格納されている未露光
基板との間隔が狭くなり、電位の異なるガラス基板４に
向けて放電が生じるのである。尚、上記放電はガラス基
板どうしの間のみならず、装置の他の導電性の部材との
間でも起こりうる。The discharge between the substrates is not limited to the case where the two transfer arms 5B and 5C pass each other, but also occurs when the charged glass substrate 4 is stored by the transfer arm 5A. This is because a plurality of glass substrates 4 are stored in the substrate storage cassette 2 at narrow intervals in order to store as many glass substrates 4 as possible in a limited space. That is, after the exposure, the charged glass substrate 4 is placed on the shelf 1 provided in the substrate storage cassette 2.
When they are carried in one by one, the gap between them and the unexposed substrates stored in the adjacent shelves becomes narrow, and discharge is generated toward the glass substrates 4 having different potentials. The discharge may occur not only between the glass substrates but also between other conductive members of the device.

【０００９】本発明は以上の点を考慮してなされたもの
で、放電によるパターンの破壊やごみの付着等のおそれ
を従来に比して一段と低減することができる基板搬送装
置を提案しようとするものである。The present invention has been made in consideration of the above points, and an object of the present invention is to propose a substrate transfer apparatus capable of further reducing the risk of pattern destruction or dust adhesion due to discharge, as compared with the prior art. It is a thing.

【００１０】[0010]

【課題を解決するための手段】かかる課題を解決するた
め本発明においては、未処理基板を基板待機位置から処
理位置へ搬入する第１の搬送手段１２Ｂと、処理済基板
を処理位置から基板待機位置へ搬出する第２の搬送手段
１２Ｃとを有する基板搬送装置において、第１及び第２
の搬送手段１１Ｂ、１２Ｃが互いにすれ違う場合、第１
及び第２の搬送手段１２Ｂ、１２Ｃの相対速度が小さく
なるように、第１の搬送手段１２Ｂ又は第２の搬送手段
１２Ｃの搬送速度を減速する速度制御手段７を備えるこ
ととする。In order to solve such a problem, according to the present invention, first transfer means 12B for loading an unprocessed substrate from the substrate standby position to the processing position, and a processed substrate waiting for the substrate from the processing position. In the substrate transfer device having the second transfer means 12C that is carried out to the position,
When the transporting means 11B and 12C of
Further, the speed control means 7 for reducing the transport speed of the first transport means 12B or the second transport means 12C is provided so that the relative speed of the second transport means 12B and 12C becomes small.

【００１１】[0011]

【作用】第１及び第２の搬送手段１２Ｂ、１２Ｃが互い
にすれ違うとき、相対速度が小さくなるように第１又は
第２の搬送手段１２Ｂ、１２Ｃの搬送速度を低下させる
ことにする。これにより放電を起こり難くくすることが
でき、放電に起因したパターン破壊やごみの付着等のお
それを一段と低減することができることが確かめられ
た。When the first and second conveying means 12B and 12C pass each other, the conveying speed of the first or second conveying means 12B and 12C is reduced so that the relative speed becomes small. It was confirmed that this makes it possible to make discharge less likely to occur and to further reduce the risk of pattern destruction and dust adhesion due to discharge.

【００１２】[0012]

【実施例】以下図面について、本発明の一実施例を詳述
する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described in detail below with reference to the drawings.

【００１３】図３との対応部分に同一符号を付して示す
図１において、１１は全体として液晶用大型ガラス基板
露光装置に用いられる搬送装置を示している。この搬送
装置１１に用いられる搬送アーム１２Ａ〜１２Ｃは速度
制御装置７によつて搬送速度を別々に設定できることを
特徴としている。また速度制御装置７には各搬送アーム
１２Ａ〜１２Ｃに対して複数の搬送速度モードが用意さ
れており、搬送状態に適した速度を適宜選択できるよう
になされている。ここで速度制御装置７は、各搬送アー
ム１２Ａ〜１２Ｃの位置を検出する位置センサ６Ａ〜６
Ｃから得られた位置情報に基づいて搬送状態（各アーム
どうしのすれ違い等）を判断し、搬送速度を制御する。
すなわち放電の発生し難い場所では搬送速度を上げる一
方、放電が発生し易い場所では搬送速度を下げるように
なされている。実際には駆動装置８が速度制御装置７か
ら出力される制御情報に応じて各搬送アーム１２Ａ〜１
２Ｃを駆動する。以下この様子を図２を用いて説明す
る。In FIG. 1 in which parts corresponding to those in FIG. 3 are designated by the same reference numerals, numeral 11 indicates a transporting apparatus used as a whole in a large glass substrate exposure apparatus for liquid crystal. The transfer arms 12A to 12C used in the transfer device 11 are characterized in that the transfer speed can be set separately by the speed control device 7. Further, the speed control device 7 is provided with a plurality of transfer speed modes for each of the transfer arms 12A to 12C so that a speed suitable for the transfer state can be appropriately selected. Here, the speed control device 7 includes position sensors 6A to 6 that detect the positions of the transfer arms 12A to 12C.
Based on the position information obtained from C, the transport state (passing between the arms, etc.) is determined, and the transport speed is controlled.
That is, the transport speed is increased in a place where discharge is unlikely to occur, while the transport speed is decreased in a place where discharge is likely to occur. In practice, the drive device 8 responds to the control information output from the speed control device 7 to transfer arms 12A to 12A-1.
Drive 2C. This situation will be described below with reference to FIG.

【００１４】例えば基板待機位置２Ａと基板受渡位置６
との間でガラス基板４を受け渡しする搬送アーム１２Ａ
の場合、高速モード時には 900〔mm/s〕の搬送速度でガ
ラス基板４を搬送し、低速モード時には 130〔mm/s〕の
搬送速度でガラス基板４を搬送するようになされてい
る。この実施例の場合、高速モードは搬送アーム１２Ａ
が基板待機位置２Ａから基板受渡位置６にガラス基板４
を搬送する際に選択されるようになされている。これに
対して低速モードは搬送アーム１２Ａが基板受渡位置６
から基板待機位置２Ａへ基板４を搬送する際に選択され
る。このとき、アーム１２Ａはイオン吹付装置１３の下
部を通過すると共にイオン化したエアが吹き付けられ
る。因にこれらモードは位置センサ６Ａから出力される
位置情報に基づいて切り換えられる。すなわち位置情報
に基づいて搬送状態を判断した速度制御装置７が駆動装
置８に搬送速度の切り換えを指示する。For example, the substrate standby position 2A and the substrate transfer position 6
Transfer arm 12A for transferring the glass substrate 4 to and from
In the case of 1, the glass substrate 4 is conveyed at a conveying speed of 900 [mm / s] in the high speed mode, and the glass substrate 4 is conveyed at a conveying speed of 130 [mm / s] in the low speed mode. In the case of this embodiment, the high speed mode is the transfer arm 12A.
The glass substrate 4 from the substrate standby position 2A to the substrate transfer position 6
It is designed to be selected when carrying. On the other hand, in the low speed mode, the transfer arm 12A moves to the substrate transfer position 6
It is selected when the substrate 4 is transferred from the substrate to the substrate standby position 2A. At this time, the arm 12A passes under the ion spraying device 13 and is sprayed with ionized air. Incidentally, these modes are switched based on the position information output from the position sensor 6A. That is, the speed control device 7, which has determined the carrying state based on the position information, instructs the drive device 8 to switch the carrying speed.

【００１５】また基板受渡位置６から基板露光位置３Ａ
にガラス基板４を搬送する搬送アーム１２Ｂの場合、高
速モード時には1000〔mm/s〕の搬送速度でガラス基板４
を搬送し、低速モード時には 130〔mm/s〕の搬送速度で
ガラス基板４を搬送するようになされている。これらの
速度は搬送アーム１２Ｂが単独に動作する際の速度であ
る。この実施例では原則的としては高速モードが選択さ
れるようになされている。但し搬送アーム１２Ｂが他の
露光済み基板を搬送する搬送アーム１２Ｃとすれ違う場
合には相対速度が 130〔mm/s〕となるように減速される
ようになされている。このときモードの切換えは位置セ
ンサ６Ｂ及び６Ｃから出力される位置情報に基づいて切
り換えられる。The substrate transfer position 6 to the substrate exposure position 3A
In the case of the transfer arm 12B that transfers the glass substrate 4 to the glass substrate 4 at a transfer speed of 1000 [mm / s] in the high speed mode.
In the low speed mode, the glass substrate 4 is transported at a transportation speed of 130 mm / s. These speeds are the speeds when the transfer arm 12B operates independently. In principle, in this embodiment, the high speed mode is selected. However, when the transfer arm 12B passes the transfer arm 12C that transfers another exposed substrate, the relative speed is decelerated so that the relative speed is 130 [mm / s]. At this time, the mode switching is switched based on the position information output from the position sensors 6B and 6C.

【００１６】同様に基板露光位置３Ａから基板受渡位置
６にガラス基板４を搬送する搬送アーム１２Ｃの場合、
高速モード時には1200〔mm/s〕の搬送速度でガラス基板
４を搬送し、低速モード時には 130〔mm/s〕の搬送速度
でガラス基板４を搬送するようになされている。これら
の速度も搬送アーム１２Ｃが単独に動作する際の速度で
ある。そして実施例の場合には原則として低速モードが
選択されるようになされている。但し搬送アーム１２Ｃ
が未露光基板を搬送する搬送アーム１２Ｂとすれ違う場
合にはさらに速度を落として相対速度が 130〔mm/s〕と
なるように設定されている。このときもモードの切換え
は位置センサ６Ｂ及び６Ｃから出力される位置情報に基
づいて切り換えられる。Similarly, in the case of the transfer arm 12C that transfers the glass substrate 4 from the substrate exposure position 3A to the substrate delivery position 6,
The glass substrate 4 is transported at a transport speed of 1200 [mm / s] in the high speed mode, and is transported at a transport speed of 130 [mm / s] in the low speed mode. These speeds are also the speeds when the transport arm 12C operates independently. In the case of the embodiment, the low speed mode is selected in principle. However, the carrier arm 12C
Is passed to the transfer arm 12B for transferring the unexposed substrate, the speed is further reduced to set the relative speed to 130 [mm / s]. At this time as well, the mode switching is switched based on the position information output from the position sensors 6B and 6C.

【００１７】以上の構成において、搬送装置１１による
ガラス基板４の基本的な搬送動作を説明する。まず搬送
装置１１は搬送アーム１２Ａによつて基板収納カセツト
２から未露光のガラス基板４を引き出し、これを高速モ
ードとして設定されている搬送速度によつて基板受渡位
置６へ搬送する。続いて搬送アーム１２Ｂは搬送アーム
１２Ａから受け継いだ未露光のガラス基板４を露光ステ
ージ３の所定位置へ搬送する。このとき搬送アーム１２
は高速モードによつてガラス基板４を搬送する。かかる
後、露光装置はこの露光ステージ３上に載置されたガラ
ス基板４を露光する。A basic transport operation of the glass substrate 4 by the transport device 11 having the above configuration will be described. First, the transfer device 11 pulls out the unexposed glass substrate 4 from the substrate storage cassette 2 by the transfer arm 12A, and transfers it to the substrate delivery position 6 at the transfer speed set in the high speed mode. Then, the transfer arm 12B transfers the unexposed glass substrate 4 inherited from the transfer arm 12A to a predetermined position on the exposure stage 3. At this time, the transfer arm 12
Transports the glass substrate 4 in the high speed mode. After that, the exposure device exposes the glass substrate 4 placed on the exposure stage 3.

【００１８】露光動作が終了すると、搬送アーム１２Ｃ
が露光ステージ３上に載置されているガラス基板４を引
き離し、露光済み基板を基板受渡位置６へ搬送する。こ
のとき搬送アーム１２Ｃは次に露光すべき未露光基板を
搬送中の搬送アーム１２Ｂとすれ違うため、その期間で
は低速モードの搬送速度からさらに速度を低下させる。
このように本実施例では未露光基板と帯電した搬送アー
ム１２Ｃが十分なギヤツプ長なくすれ違う場合の相対速
度を従来に比して低速に設定したのであるが、この結
果、放電を発生させないことに対する効果が今回実験に
おいて確かめることができた。従つて相対速度を低下さ
せることは放電によるパターン破壊を回避する上で有効
であると考えられる。When the exposure operation is completed, the transfer arm 12C
Separates the glass substrate 4 placed on the exposure stage 3 and conveys the exposed substrate to the substrate delivery position 6. At this time, since the transport arm 12C passes the unexposed substrate to be exposed next to the transport arm 12B which is transporting, the transport speed is further reduced from the transport speed in the low speed mode during that period.
As described above, in the present embodiment, the relative speed when the unexposed substrate and the charged transfer arm 12C pass each other without a sufficient gear length is set to a lower speed than the conventional one. The effect could be confirmed in the experiment this time. Therefore, reducing the relative speed is considered to be effective in avoiding pattern destruction due to discharge.

【００１９】また基板受渡位置６において搬送アーム１
２Ｃから露光済み基板を受け渡された搬送アーム１２Ａ
は未露光基板の搬送時とは異なり、低速度によつてイオ
ン吹付装置１３の下部を移動する。これによりイオン化
した気体を従来の場合に比して長時間ガラス基板４上に
吹き付けることができる。この結果、ガラス基板４に帯
電した電荷は中和され、基板収納カセツト２にガラス基
板４を収納する際に他の未露光基板との間で放電が生じ
るおそれも一段と低減することができる。Further, at the substrate transfer position 6, the transfer arm 1
Transfer arm 12A that has received the exposed substrate from 2C
Moves at a lower speed below the ion spraying device 13 unlike when the unexposed substrate is transported. As a result, the ionized gas can be sprayed on the glass substrate 4 for a longer time than in the conventional case. As a result, the electric charge charged on the glass substrate 4 is neutralized, and when the glass substrate 4 is housed in the substrate housing cassette 2, the risk of discharge between the glass substrate 4 and another unexposed substrate can be further reduced.

【００２０】露光装置はこの動作を順次繰り返すことに
よりガラス基板４を露光する。但し最後の１枚のガラス
基板４を搬送する場合には、未露光基板と露光済み基板
が互いにすれ違うことがないため放電によるパターン破
壊も心配しなくて良いため露光ステージ３から基板受渡
位置６へガラス基板４を搬送する搬送アーム１２Ｃは高
速モードにてガラス基板４を搬送し、搬送アーム１２Ａ
に受け渡す。The exposure apparatus exposes the glass substrate 4 by sequentially repeating this operation. However, when the last one glass substrate 4 is conveyed, the unexposed substrate and the exposed substrate do not pass each other, and therefore there is no need to worry about the pattern destruction due to the discharge, so that the exposure stage 3 moves to the substrate delivery position 6. The transfer arm 12C that transfers the glass substrate 4 transfers the glass substrate 4 in the high-speed mode, and the transfer arm 12A
Hand over to.

【００２１】因に搬送アーム１２Ａはこの場合にも他の
搬送動作の場合と同様、低速モードにてガラス基板４を
搬送し、基板収納カセツト２の所定位置に搬送する。こ
れによりこの場合にもイオン化した気体によつて基板上
の電荷を中和することができ、ガラス基板４の電荷量を
減少させることができる。Incidentally, in this case, the transfer arm 12A transfers the glass substrate 4 to the predetermined position of the substrate storage cassette 2 in the low speed mode as in the case of other transfer operations. As a result, also in this case, the charges on the substrate can be neutralized by the ionized gas, and the amount of charges on the glass substrate 4 can be reduced.

【００２２】以上の構成によれば、露光済みのガラス基
板４を搬送する搬送アーム１２Ｃと未露光のガラス基板
４とがすれ違う際の放電を一段と低減することができ
る。これにより露光済みのガラス基板上に形成されたパ
ターンが破壊されるおそれも一段と低減することができ
る。また露光済みのガラス基板４にイオン化した気体を
長時間吹き付けることができるためガラス基板４の帯電
量を一段と減少させることができ、ごみ等の付着も低減
することができる。According to the above structure, it is possible to further reduce the discharge when the transfer arm 12C that transfers the exposed glass substrate 4 and the unexposed glass substrate 4 pass each other. As a result, the possibility that the pattern formed on the exposed glass substrate is destroyed can be further reduced. Further, since the ionized gas can be blown onto the exposed glass substrate 4 for a long time, the charge amount of the glass substrate 4 can be further reduced, and the adhesion of dust and the like can be reduced.

【００２３】特に帯電量は基板が大型化すればするほど
増加すると考えられるため、帯電量の減少は細密なパタ
ーンが要求される大型基板の露光の際には特に有効であ
る。またこのように低速モードで基板を搬送するのは帯
電による影響を受け易い場所に限るだけであり、他の領
域では高速搬送できるためスループツトを低下させるこ
となく上述の効果を実現することができる。In particular, since it is considered that the charge amount increases as the size of the substrate increases, the decrease of the charge amount is particularly effective when exposing a large substrate for which a fine pattern is required. Further, the substrate is transported in the low speed mode only in a place where it is easily affected by charging, and in the other regions, the substrate can be transported at a high speed, so that the above effects can be realized without lowering the throughput.

【００２４】なお上述の実施例においては、露光済みガ
ラス基板４を搬送する搬送アーム１２Ｃと未露光のガラ
ス基板４とがすれ違う場合、搬送速度の相対速度が 130
〔mm/s〕となるように搬送アーム１２Ｂ及び１２Ｃの搬
送速度を低下させる場合について述べたが、本発明はこ
れに限らず、露光済みのガラス基板４が他の導電性部材
の近傍を通過する際にも搬送速度を低下させるようにし
ても良い。このようにすれば搬送経路の周辺に位置する
導電性部材に向けて放電することによつてガラス基板４
上に形成された露光パターンが破壊されるおそれもなく
すことができる。In the above embodiment, when the transfer arm 12C for transferring the exposed glass substrate 4 and the unexposed glass substrate 4 pass each other, the relative speed of the transfer speed is 130.
The case where the transfer speed of the transfer arms 12B and 12C is reduced so as to be [mm / s] has been described, but the present invention is not limited to this, and the exposed glass substrate 4 passes near other conductive members. The conveying speed may be reduced also when performing. In this way, the glass substrate 4 is discharged by discharging toward the conductive member located around the transport path.
It is possible to eliminate the possibility that the exposure pattern formed above is destroyed.

【００２５】また上述の実施例においては、基板受渡位
置６から露光ステージ３へガラス基板４を搬送する搬送
アーム１２Ｂを原則として高速モードによつて搬送し、
反対方向へ露光済みのガラス基板４を搬送する搬送アー
ム１２Ｃを原則として低速モードとする場合について述
べたが、本発明はこれに限らず、相対速度を低下するこ
とができれば速度モードはこの逆の関係でも良い。すな
わち基板受渡位置６から露光ステージ３へガラス基板４
を搬送する搬送アーム１２Ｂを原則として低速モードに
よつて搬送し、反対方向へ露光済みのガラス基板４を搬
送する搬送アーム１２Ｃを原則として高速モードによつ
て搬送するようにしても良い。In the above-described embodiment, the transfer arm 12B for transferring the glass substrate 4 from the substrate transfer position 6 to the exposure stage 3 is transferred in principle in the high speed mode.
The case where the transfer arm 12C that transfers the exposed glass substrate 4 in the opposite direction is set to the low speed mode in principle has been described, but the present invention is not limited to this, and the speed mode is the opposite if the relative speed can be reduced. Good relationship. That is, the glass substrate 4 is transferred from the substrate transfer position 6 to the exposure stage 3.
In principle, the transport arm 12B that transports the glass substrate may be transported in the low speed mode, and the transport arm 12C that transports the exposed glass substrate 4 in the opposite direction may be transported in the high speed mode.

【００２６】さらに上述の実施例においては、ガラス基
板４を基板収納カセツト２に複数枚一度に保管してお
き、露光の際に１枚づつ取り出すと共に１枚づつ収納す
る形式の搬送機構について述べたが、本発明はこれに限
らず、ガラス基板４を外部装置から１枚づつ受け取るイ
ンライン形式の搬送機構にも適用し得る。Further, in the above-described embodiment, the transfer mechanism of the type in which a plurality of glass substrates 4 are stored in the substrate storage cassette 2 at a time and taken out one by one at the time of exposure and also stored one by one. However, the present invention is not limited to this, and can be applied to an in-line type transfer mechanism that receives the glass substrates 4 one by one from an external device.

【００２７】また上述の実施例においては、液晶用大型
ガラス基板を搬送する場合について述べたが、本発明は
これに限らず、液晶以外に用いられるガラス基板を搬送
する場合にも適用し得、また大型のガラス基板を搬送す
る場合にも限らない。因に搬送装置１１における搬送速
度は搬送されるガラス基板の大きさに応じて設定すれば
良く、ガラス基板の大きさが小さい場合には実施例の場
合に比してさらに高速であつても良く、その反対にガラ
ス基板の大きさが大きい場合には実施例の場合に比して
さらに低速であつても良い。In the above embodiment, the case of carrying a large glass substrate for liquid crystal has been described, but the present invention is not limited to this, and can be applied to the case of carrying a glass substrate used for other than liquid crystal, Further, it is not limited to the case of carrying a large glass substrate. Incidentally, the carrying speed in the carrying device 11 may be set according to the size of the glass substrate to be carried, and when the size of the glass substrate is small, it may be higher than that in the embodiment. On the contrary, when the size of the glass substrate is large, the speed may be lower than that of the embodiment.

【００２８】上述の実施例においては、搬送アーム１２
Ａ〜１２Ｃの搬送速度は搬送方向に応じて予め設定され
ている速度に制御する場合について述べたが、本発明は
これに限らず、ガラス基板４の帯電状態（例えば電荷
量）を検出する検出手段を用意し、当該検出手段によつ
て検出された帯電状態に応じて搬送アーム１２Ａ〜１２
Ｃの搬送速度を可変制御するようにしても良い。In the embodiment described above, the transfer arm 12
The case where the transport speeds of A to 12C are controlled to preset speeds according to the transport direction has been described, but the present invention is not limited to this, and detection for detecting the charged state (charge amount, for example) of the glass substrate 4 is performed. Means are provided, and the transfer arms 12A to 12 are provided in accordance with the charged state detected by the detection means.
The transport speed of C may be variably controlled.

【００２９】さらに上述の実施例においては、イオン吹
付装置１３から吹き付けるイオン量は常に一定の場合に
ついて述べたが、本発明はこれに限らず、帯電量に応じ
てイオン吹付装置１３から吹き付けられるイオン量を調
整しても良い。Further, in the above-mentioned embodiment, the case where the amount of ions sprayed from the ion spraying device 13 is always constant has been described, but the present invention is not limited to this, and the ions sprayed from the ion spraying device 13 according to the charge amount. You may adjust the amount.

【００３０】さらに上述の実施例においては、露光済み
のガラス基板を基板収納カセツト２に収納する前の段階
で搬送途中のガラス基板４に対してイオン吹付装置１３
から吹き出されたイオンを吹き付ける場合について述べ
たが、本発明はこれに限らず、イオン吹付装置１３を設
けない場合にも適用し得る。この場合であつても露光済
みのガラス基板４を搬送する搬送アーム１２Ｃと未露光
のガラス基板４とがすれ違う際における相対速度を低く
抑えれば放電による影響は実用上十分な範囲で低減する
ことができる。Further, in the above-mentioned embodiment, the ion spraying device 13 is applied to the glass substrate 4 which is being conveyed before the exposed glass substrate is stored in the substrate storage cassette 2.
Although the case of spraying the ions blown from is described above, the present invention is not limited to this and can be applied to the case where the ion spraying device 13 is not provided. Even in this case, if the relative speed when the transfer arm 12C that transfers the exposed glass substrate 4 and the unexposed glass substrate 4 pass each other is kept low, the influence of the discharge can be reduced within a practically sufficient range. You can

【００３１】さらに上述の実施例においては、搬送装置
１１を露光装置における搬送機構に適用する場合につい
て述べたが、本発明はこれに限らず、熱処理工程で用い
る搬送装置や露光基板現像処理の前工程としてレジスト
を塗布したものを搬送する際に使用する搬送装置にも適
用し得る。この場合にも上述の実施例の場合と同様、放
電によるパターン破壊や帯電によるごみ等の付着のおそ
れを有効に低減することができる。Further, in the above-mentioned embodiment, the case where the transfer device 11 is applied to the transfer mechanism in the exposure device has been described, but the present invention is not limited to this, and the transfer device used in the heat treatment step or before the exposure substrate developing process. It can also be applied to a transfer device used when transferring a resist-coated product as a step. Also in this case, as in the case of the above-described embodiment, it is possible to effectively reduce the risk of pattern destruction due to discharge and adhesion of dust or the like due to charging.

【００３２】[0032]

【発明の効果】上述のように本発明によれば、第１及び
第２の搬送手段が互いにすれ違う場合には、これら第１
及び第２の搬送手段の相対速度が小さくなるように第１
又は第２の搬送手段の搬送速度を低下させることによ
り、第１及び第２の搬送手段どうし間で放電が起こり難
くくすることができる。この結果、基板上に形成された
パターンが破壊されたり、ごみ等が付着するおそれを一
段と低減することができる。As described above, according to the present invention, when the first and second conveying means pass each other, the first
And the first speed so that the relative speed of the second transport means becomes small.
Alternatively, by reducing the transport speed of the second transport means, it is possible to make it difficult for discharge to occur between the first and second transport means. As a result, it is possible to further reduce the risk that the pattern formed on the substrate is destroyed or dust or the like is attached.

【図面の簡単な説明】[Brief description of drawings]

【図１】本発明による基板搬送装置の一実施例を示す略
線図である。FIG. 1 is a schematic diagram showing an embodiment of a substrate transfer device according to the present invention.

【図２】搬送速度の関係を説明するのに用いる略線図で
ある。FIG. 2 is a schematic diagram used to explain a relationship between transport speeds.

【図３】従来用いられている基板搬送装置を示す略線図
である。FIG. 3 is a schematic diagram showing a conventionally used substrate transfer device.

【図４】搬送速度の関係を説明するのに用いる略線図で
ある。FIG. 4 is a schematic diagram used to explain a relationship between transport speeds.

【符号の説明】[Explanation of symbols]

１、１１……搬送装置、２……基板収納カセツト、３…
…露光ステージ、４……ガラス基板、５Ａ〜５Ｃ、１２
Ａ〜１２Ｃ……搬送アーム、６Ａ〜６Ｃ……位置セン
サ、７……速度制御装置、８……駆動装置、１３……イ
オン吹付装置。1, 11 ... Transporting device, 2 ... Substrate storage cassette, 3 ...
... exposure stage, 4 ... glass substrate, 5A to 5C, 12
A to 12C ... transport arm, 6A to 6C ... position sensor, 7 ... speed control device, 8 ... driving device, 13 ... ion spraying device.

Claims (4)

【特許請求の範囲】[Claims] 【請求項１】未処理基板を基板待機位置から処理位置へ
搬入する第１の搬送手段と、処理済基板を前記処理位置
から前記基板待機位置へ搬出する第２の搬送手段とを有
する基板搬送装置において、 前記第１及び第２の搬送手段が互いにすれ違う場合、前
記第１及び第２の搬送手段の相対速度が小さくなるよう
に、前記第１の搬送手段又は前記第２の搬送手段の搬送
速度を減速する速度制御手段を備えたことを特徴とする
基板搬送装置。1. A substrate transfer having first transfer means for loading an unprocessed substrate from a substrate standby position to a processing position and second transfer means for transferring a processed substrate from the processing position to the substrate standby position. In the device, when the first and second conveying means pass each other, the conveying of the first conveying means or the second conveying means is performed so that the relative speed of the first and second conveying means becomes small. A substrate transfer apparatus comprising speed control means for reducing the speed. 【請求項２】前記基板にイオン化した気体を吹き付け、
前記基板に帯電した静電気を取り除くイオン化エア供給
手段をさらに備えることを特徴とする請求項１に記載の
基板搬送装置。2. The substrate is sprayed with an ionized gas,
The substrate transfer apparatus according to claim 1, further comprising ionized air supply means for removing static electricity charged on the substrate. 【請求項３】前記基板の帯電状態を検出する帯電状態検
出手段と、 前記帯電状態に応じて、前記第１の搬送手段の搬送速度
又は前記第２の搬送手段の搬送速度を可変する制御手段
とを備えることを特徴とする請求項１又は請求項２に記
載の基板搬送装置。3. A charging state detecting means for detecting a charging state of the substrate, and a control means for varying a carrying speed of the first carrying means or a carrying speed of the second carrying means according to the charged state. The substrate transfer apparatus according to claim 1 or 2, further comprising: 【請求項４】前記第１及び第２の搬送手段は、該搬送手
段の位置を検出する位置検出手段を備え、該位置検出手
段の情報に基づいて前記すれ違いを検出することを特徴
とする請求項１に記載の基板搬送装置。4. The first and second conveying means are provided with a position detecting means for detecting the position of the conveying means, and the passing difference is detected based on information of the position detecting means. Item 2. The substrate transfer apparatus according to Item 1.
JP31437093A 1993-11-18 1993-11-18 Substrate transfer device, exposure device, and exposure method Expired - Lifetime JP3362487B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31437093A JP3362487B2 (en) 1993-11-18 1993-11-18 Substrate transfer device, exposure device, and exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31437093A JP3362487B2 (en) 1993-11-18 1993-11-18 Substrate transfer device, exposure device, and exposure method

Publications (2)

Publication Number Publication Date
JPH07142382A true JPH07142382A (en) 1995-06-02
JP3362487B2 JP3362487B2 (en) 2003-01-07

Family

ID=18052524

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31437093A Expired - Lifetime JP3362487B2 (en) 1993-11-18 1993-11-18 Substrate transfer device, exposure device, and exposure method

Country Status (1)

Country Link
JP (1) JP3362487B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238778A (en) * 1998-02-23 1999-08-31 Nec Kagoshima Ltd Substrate-transferring device
JP2006080198A (en) * 2004-09-08 2006-03-23 Tokyo Electron Ltd Device and method for carrying substrate
CN101908469A (en) * 2009-06-08 2010-12-08 东京毅力科创株式会社 Processing apparatus
JP2011139074A (en) * 2011-01-07 2011-07-14 Applied Materials Inc Sensor dynamically detecting breakage of substrate and shift of substrate being moved
JP2017183416A (en) * 2016-03-29 2017-10-05 キヤノン株式会社 Imprint device and manufacturing method of material

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238778A (en) * 1998-02-23 1999-08-31 Nec Kagoshima Ltd Substrate-transferring device
JP2006080198A (en) * 2004-09-08 2006-03-23 Tokyo Electron Ltd Device and method for carrying substrate
JP4580719B2 (en) * 2004-09-08 2010-11-17 東京エレクトロン株式会社 Substrate transport apparatus and substrate transport method
CN101908469A (en) * 2009-06-08 2010-12-08 东京毅力科创株式会社 Processing apparatus
TWI483336B (en) * 2009-06-08 2015-05-01 Tokyo Electron Ltd Processing device
JP2011139074A (en) * 2011-01-07 2011-07-14 Applied Materials Inc Sensor dynamically detecting breakage of substrate and shift of substrate being moved
JP2017183416A (en) * 2016-03-29 2017-10-05 キヤノン株式会社 Imprint device and manufacturing method of material

Also Published As

Publication number Publication date
JP3362487B2 (en) 2003-01-07

Similar Documents

Publication Publication Date Title
TWI682432B (en) Substrate processing apparatus and substrate processing method
JPH08222616A (en) Substrate processor
KR970023972A (en) METHOD AND APPARATUS FOR CONTROLLING SUBSTRATE PROCESSING APPARATUS
JP3362487B2 (en) Substrate transfer device, exposure device, and exposure method
JP2004055748A (en) Particle-removing device
JP5759418B2 (en) Substrate neutralization system
JP2660285B2 (en) Substrate processing apparatus and substrate processing method
CN110943005B (en) Substrate processing apparatus and substrate processing method
KR100572268B1 (en) Discharging method and processing apparatus having discharging function
JP2002043208A (en) Method for coating and development
JP2000138162A (en) Processor
TW200832595A (en) Processing apparatus
JPH08321537A (en) Treatment equipment and treatment method
JP3957445B2 (en) Substrate processing apparatus and substrate processing method
JPH11340297A (en) Method and device for transporting substrate
JP3120315B2 (en) Processing equipment
JP2000049206A (en) Substrate treating apparatus
CN116804827B (en) Substrate processing apparatus and substrate processing method
JPS60182727A (en) Automatic wafer processor
KR102256215B1 (en) Substrate processing apparatus
JP2012199328A (en) Substrate processing apparatus and substrate processing method
JPH09102444A (en) Substrate treatment device
JP3194091B2 (en) Coating and developing equipment
JP2001053125A (en) Processing system
JPH06222563A (en) Work carrying device

Legal Events

Date Code Title Description
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20020924

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081025

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111025

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20141025

Year of fee payment: 12

EXPY Cancellation because of completion of term