JPH07120740B2 - Lead frame for semiconductor and its manufacturing method - Google Patents
Lead frame for semiconductor and its manufacturing methodInfo
- Publication number
- JPH07120740B2 JPH07120740B2 JP63230827A JP23082788A JPH07120740B2 JP H07120740 B2 JPH07120740 B2 JP H07120740B2 JP 63230827 A JP63230827 A JP 63230827A JP 23082788 A JP23082788 A JP 23082788A JP H07120740 B2 JPH07120740 B2 JP H07120740B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- copper
- base material
- semiconductor
- plating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、半導体用リードフレームの素材の構成に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to a material structure of a lead frame for a semiconductor.
近年の半導体デイバイスの高集積化、高出力化、高信頼
性、小型化等に伴い、そのためのリードフレームに対す
る要求も多岐にわたっており、そのため、機械的性質、
熱・電気的性質、熱膨張性、プレス成形性、めっき性、
耐熱性等において以下のことが要求される。With the recent high integration, high output, high reliability, miniaturization, etc. of semiconductor devices, there are various requirements for lead frames for that purpose.
Thermal and electrical properties, thermal expansion, press formability, plating property,
The following is required in terms of heat resistance and the like.
（１）機械的性質 引っ張り強さが40〜70kg/mm2、伸び率が６％以上あっ
て、その上、繰り返し曲げ強さがデイバイスの実装に耐
える強さを有すること。(1) Mechanical properties Tensile strength is 40 to 70 kg / mm 2 , elongation is 6% or more, and repeated bending strength is strength to withstand mounting of device.
（２）熱・電気的性質 熱伝導率が60％IACS以上であって、デイバイスの発熱に
対して、放熱性が良く、電気伝導性が良いこと。(2) Thermal / electrical properties The thermal conductivity is 60% IACS or more, and the heat dissipation of the device is good and the electric conductivity is good.
（３）熱膨張性 熱膨張係数が半導体チップおよび封止材料に近いこと。(3) Thermal expansion coefficient The thermal expansion coefficient is close to that of the semiconductor chip and the sealing material.
（４）プレス成形性 成形品であるリードの位置精度が高いこと。(4) Press moldability The lead, which is a molded product, has high positional accuracy.
（５）めっき性 内部めっき、外装はんだめっきを容易に行うことができ
ること。(5) Platability It should be possible to easily perform internal plating and external solder plating.
（６）耐熱性 デイバイス実装中の加熱による強度の低下が少ないこ
と。(6) Heat resistance The decrease in strength due to heating during device mounting is small.
従来、上記リードフレーム材としての要求特性を比較的
満足するものとして、例えば特公昭62-42018号公報に記
載されているように、経済的な要因もあって、鉄−ニッ
ケル合金、銅合金が主として使用されて来た。Conventionally, as those relatively satisfying the required characteristics as the lead frame material, for example, as described in JP-B-62-42018, due to economic factors, iron-nickel alloy, copper alloy It has been used mainly.
しかしながら、上記のリードフレーム材のうち鉄−ニッ
ケル合金は、その機械的性質、熱膨張性および耐熱性に
おいては良好であるが、熱伝導性、電気伝導性、それに
めっき性において劣るという問題がある。However, among the above lead frame materials, the iron-nickel alloy is good in its mechanical properties, thermal expansion and heat resistance, but has a problem that it is inferior in thermal conductivity, electrical conductivity and plating property. .
他方、銅合金は、熱伝導性、電気伝導性、それにめっき
性においては良好であるが、機械的性質と熱膨張係数が
大きいという問題がある。On the other hand, the copper alloy has good thermal conductivity, electrical conductivity, and plating property, but has a problem that it has a large mechanical property and a large thermal expansion coefficient.
その上、ニッケル等の価格高騰もあって、例えば、特開
昭59-76453号公報に記載のように、上記リードフレーム
の諸特性を総合的に満足する材料として、鉄、ニッケ
ル、クロム等の合金の基材上に銅または銅合金を熱間高
圧下率の下で接合し、焼鈍したクラッド材が使用される
ようになった。In addition, due to soaring prices of nickel and the like, for example, as described in Japanese Patent Laid-Open No. 59-76453, materials such as iron, nickel, and chrome that are comprehensively satisfying the various characteristics of the lead frame are available. Copper or copper alloys have been bonded onto an alloy base material under a hot high pressure reduction ratio, and an annealed clad material has come to be used.
ところが、このようなクラッド材は、高圧下率によって
表面が硬化し、そのため、その後のプレス、切断、打ち
抜き等で所定の形状に成形する際に、欠け、割れ、剥離
等が生じ、製品の歩留まりが低下するという欠陥があ
る。However, the surface of such a clad material is hardened by a high pressure reduction, and therefore, when it is formed into a predetermined shape by subsequent pressing, cutting, punching, etc., chipping, cracking, peeling, etc. occur, resulting in a product yield. There is a defect that
本発明において解決すべき課題は、このようなクラッド
材からなるリードフレームの欠陥を解消して、単一素材
からなるリードフレームと同様の特性と歩留まりとを有
するリードフレームを得ることにある。The problem to be solved in the present invention is to eliminate such defects of the lead frame made of the clad material and obtain a lead frame having the same characteristics and yield as the lead frame made of a single material.
本発明の半導体装置用リードフレームは、クロムを５〜
10.5％含有する鉄合金耐腐食材からなる基材と同基材両
面上に銅材からなる表面材を設けたクラッド材からなる
半導体用リードフレームにおいて前記銅材からなる表面
材を純度99.999％以上の銅めっき層を介して形成すると
共に、同両面の銅めっき層の厚みが、リードフレーム全
体の厚みに対してそれぞれ0.5〜１％であり、且つ両面
の表面材の厚みが、リードフレーム全体の厚みに対して
それぞれ10〜20％であることを特徴とする。The lead frame for a semiconductor device of the present invention contains 5 to 5 chromium.
In a lead frame for semiconductors made of a clad material with a base material made of a corrosion resistant iron alloy containing 10.5% and a surface material made of a copper material on both sides of the base material, the surface material made of the copper material has a purity of 99.999% or more. The thickness of the copper plating layer on both sides is 0.5 to 1% of the thickness of the entire lead frame, and the thickness of the surface material on both sides is the same as that of the entire lead frame. It is characterized in that each is 10 to 20% of the thickness.
また、かかる半導体装置用リードフレームは、クロムを
５〜10.5％含有する鉄合金耐腐食材からなる基材の両表
面に、純度99.999％以上の銅めっき層を形成し、その上
に純度99.999％以上の銅表面材を載置して、25〜30％の
圧下率で接合することによって製造できる。Further, such a lead frame for a semiconductor device is such that a copper plating layer having a purity of 99.999% or more is formed on both surfaces of a base material composed of an iron alloy corrosion-resistant material containing 5-10.5% chromium, and a 99.999% purity is formed on the copper plating layer. It can be manufactured by placing the above copper surface materials and joining them at a rolling reduction of 25 to 30%.
本発明は、クラッド材の基材と表面材との間にめっき層
を介在せしめたもので、これによって、基材上への表面
材の圧接能が改善され、低い圧接力によって基材上にク
ラッド層が形成される。そのため、クラッド材でありな
がら、表面硬化がなく上記要求特性を全て満足するリー
ドフレームを得ることができる。The present invention has a plating layer interposed between the base material of the clad material and the surface material, which improves the pressure contacting ability of the surface material onto the base material, and the low pressure contact force allows the surface material to be pressed onto the base material. A clad layer is formed. Therefore, it is possible to obtain a lead frame that is a clad material but does not have surface hardening and that satisfies all the required characteristics.
本発明における基材と、表面材、それにめっき層を形成
する金属材料の組み合わせとしては、第１表に記載のも
のが好適に適用できる。As the combination of the base material, the surface material, and the metal material for forming the plating layer on the base material in the present invention, those described in Table 1 can be suitably applied.
とくに、基材としては耐腐食性，機械的強度および経済
性の点から、鉄−クロム合金が好ましい。この場合、耐
腐食性とめっき性との点からCrの含有量は５〜10.5重量
％の範囲内にある必要がある。その厚みは、機械的強
度，プレス成型性の点からリードフレーム全体の厚みの
60〜80％であることが望ましい。 In particular, an iron-chromium alloy is preferable as the base material from the viewpoint of corrosion resistance, mechanical strength and economy. In this case, the Cr content needs to be in the range of 5 to 10.5 wt% from the viewpoint of corrosion resistance and plating property. The thickness is the same as the thickness of the entire lead frame from the viewpoint of mechanical strength and press moldability.
It is desirable to be 60 to 80%.
また、表面材としては、電気，熱伝導性が良い銅，銅合
金等が好ましく、表面材の厚みはその材質にもよるが、
銅材を用いたときには片側厚みがリードフレーム全体厚
みの10〜20％の範囲内であって、好ましくは15％程度で
ある。Further, as the surface material, copper, copper alloy, etc. having good electric and thermal conductivity are preferable, and the thickness of the surface material depends on the material,
When a copper material is used, the thickness on one side is within the range of 10 to 20% of the total thickness of the lead frame, preferably about 15%.
基材と表面材との間に介在するメッキ層は、銅，銀，金
等が適用できるが、経済性の点から銅が好ましい。ステ
ンレス材に銅めっきを施す公知のアルカリ浴めっき法等
によって形成することができる。このめっき層の厚み
は、リードフレーム全体の厚み0.5〜１％である。The plating layer interposed between the base material and the surface material may be made of copper, silver, gold or the like, but is preferably copper from the economical point of view. It can be formed by a known alkaline bath plating method or the like in which stainless steel is plated with copper. The thickness of this plating layer is 0.5 to 1% of the total thickness of the lead frame.
この範囲内にあることが接合強度の点から望ましく、め
っき層が薄いと基材中に拡散して、接合強度が低下し剥
離の原因となる。It is desirable to be within this range from the viewpoint of the bonding strength, and if the plating layer is thin, it will diffuse into the base material and the bonding strength will decrease, causing peeling.
また、基材と表面材との間にめっき層が介在するため、
常温低圧下率で最適な強度と打ち抜き特性をもつように
加工，硬化される。この場合、圧下のストレス，表面材
のズレ等の点から、圧下率は25〜30％の範囲にあること
が望ましい。Moreover, since the plating layer is interposed between the base material and the surface material,
It is processed and hardened at room temperature and low pressure to obtain optimum strength and punching properties. In this case, it is desirable that the rolling reduction is in the range of 25 to 30% from the viewpoints of rolling stress and surface material displacement.
これによって、基材７と表面材５とがめっき層６を介し
て圧接され、層間の界面に沿って相接触する部分に冶金
学的接合によってクラッド材が形成される。As a result, the base material 7 and the surface material 5 are pressed against each other via the plating layer 6, and a clad material is formed by metallurgical bonding at a portion in mutual contact along the interface between the layers.
第１図に示す形状を有するリードフレームを本発明に基
づいて作成した。A lead frame having the shape shown in FIG. 1 was produced according to the present invention.
同図を参照して、基材７として0.22mm厚の鉄−クロム合
金条材を使用した。この基材７の両面に、以下のめっき
条件の下で、５μｍ厚の銅めっき６を施した。Referring to the figure, a 0.22 mm-thick iron-chromium alloy strip was used as the base material 7. Copper plating 6 having a thickness of 5 μm was applied to both surfaces of the base material 7 under the following plating conditions.
〈めっきの条件〉 めっき浴組成：シアン化銅15〜30g/l、シアン化ナトリ
ウム30〜45g/l、遊離シアン化ナトリウム10〜15g/l、水
酸化カリウム０〜4g/l。<Plating conditions> Plating bath composition: Copper cyanide 15 to 30 g / l, sodium cyanide 30 to 45 g / l, free sodium cyanide 10 to 15 g / l, potassium hydroxide 0 to 4 g / l.
めっき条件：浴温；室温、pH;11.4〜12.0、陰極電流密
度４〜8A/dm2、陽極；電気銅。Plating conditions: bath temperature; room temperature, pH; 11.4-12.0, cathode current density 4-8 A / dm 2 , anode: electrolytic copper.
表面形成材としては、0.05mm厚の銅条材８を使用し、該
銅条材８を該めっき層６の上に載せて圧延によって全圧
下率30％で接合した。A 0.05 mm thick copper strip 8 was used as the surface forming material, and the copper strip 8 was placed on the plating layer 6 and joined by rolling at a total reduction of 30%.
これによって、第２図に示すクラッド材を得た。As a result, the clad material shown in FIG. 2 was obtained.
さらに、このクラッド材を普通のプレス加工方法で打ち
抜き、第１図に示すようなリードフレームが形成され
る。即ち、プレス加工方法は、前記クラッド材から順次
打ち抜かれてマウンティングパット１を形成し、マウン
ティングパット１に隣接して放射状に離間して配設され
た複数のインナリード２とアウタリード４を形成し、マ
ウンティングパット１を支持するサポートバー1aを形成
し、且つリード2,4を支持するダムバー３とサイドレー
ル3aを形成して、リードフレームが得られる。Further, this clad material is punched out by an ordinary press working method to form a lead frame as shown in FIG. That is, in the pressing method, the mounting pad 1 is sequentially punched from the clad material to form a plurality of inner leads 2 and outer leads 4 which are adjacent to the mounting pad 1 and are radially separated from each other. A support bar 1a that supports the mounting pad 1 is formed, and a dam bar 3 and side rails 3a that support the leads 2 and 4 are formed to obtain a lead frame.
本発明によって以下の効果を奏することができる。 The following effects can be achieved by the present invention.
（１）電気，熱伝導が良好で機械的強度，耐腐食性等、
リードフレーム特性要求を満たすリードフレームが得ら
れる。(1) Good electrical and thermal conductivity, mechanical strength, corrosion resistance, etc.
A lead frame satisfying the requirements for lead frame characteristics can be obtained.
（２）高純度の銅材を有するため、パッケージ材料によ
っては、銀，金等の貴金属めっきが不必要となり、また
必要としても薄くてよいので貴金属の節減になる。(2) Due to having a high-purity copper material, noble metal plating of silver, gold or the like is unnecessary depending on the package material, and even if necessary, it can be thin, thus saving precious metal.
（３）リードフレームの成形に際しても、めっき層を介
しているため常温低圧下率で接合でき、また表面硬化さ
れていないので、歪みが少なく正確な切断とパッド加工
が可能になり、高い信頼性を有するリードフレームを得
ることができる。(3) When molding the lead frame, it can be bonded at a low pressure at room temperature because the plating layer is interposed, and since the surface is not hardened, it is possible to perform accurate cutting and pad processing with less distortion, resulting in high reliability. Can be obtained.
（４）表面硬度，表面状態等において加工の条件に左右
されることなく、機械的強度が基材そのもの、表面状態
が表面材そのものの特性を有するリードフレームを得る
ことができる。(4) It is possible to obtain a lead frame whose mechanical strength has the characteristics of the base material itself and whose surface state has the characteristics of the surface material itself, without being affected by processing conditions such as surface hardness and surface state.
第１図は本発明によって得たリードフレームの一態様を
示し、第２図はその断面構造を示す図である。 1:マウンティングパット、1a:サポートバー 2:インナリード、3:ダムバー 3a:サイドレール、4:アウタリード 5:表面材、6:めっき層 7:基材、8:銅条材FIG. 1 shows one embodiment of the lead frame obtained by the present invention, and FIG. 2 is a view showing its sectional structure. 1: Mounting pad, 1a: Support bar 2: Inner lead, 3: Dam bar 3a: Side rail, 4: Outer lead 5: Surface material, 6: Plating layer 7: Base material, 8: Copper strip
Claims (2)
材からなる基材と同基材両面上に銅材からなる表面材を
設けたクラッド材からなる半導体用リードフレームにお
いて、 前記銅材からなる表面材を純度99.999％以上の銅めっき
層を介して形成すると共に、同両面の銅めっき層の厚み
が、リードフレーム全体の厚みに対してそれぞれ0.5〜
１％であり、且つ両面の表面材の厚みが、リードフレー
ム全体の厚みに対してそれぞれ10〜20％であることを特
徴とする半導体用リードフレーム。1. A semiconductor lead frame comprising a base material made of an iron alloy corrosion resistant material containing 5 to 10.5% of chromium and a clad material provided with a surface material made of a copper material on both surfaces of the base material. A surface material made of a material is formed via a copper plating layer with a purity of 99.999% or more, and the thickness of the copper plating layer on both sides is 0.5 to
A lead frame for a semiconductor, characterized in that the thickness of the surface material on both sides is 1% to 10% to 20% of the thickness of the entire lead frame, respectively.
材からなる基材の両表面に、純度99.999％以上の銅めっ
き層を形成し、その上に純度99.999％以上の銅表面材を
載置して、25〜30％の圧下率で接合することを特徴とす
る半導体用リードフレームの製造法。2. A copper plating layer having a purity of 99.999% or more is formed on both surfaces of a base material made of an iron alloy corrosion-resistant material containing 5 to 10.5% of chromium, and a copper surface material having a purity of 99.999% or more is formed thereon. A method for manufacturing a lead frame for a semiconductor, characterized in that the substrate is placed and bonded at a reduction rate of 25 to 30%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63230827A JPH07120740B2 (en) | 1988-09-13 | 1988-09-13 | Lead frame for semiconductor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63230827A JPH07120740B2 (en) | 1988-09-13 | 1988-09-13 | Lead frame for semiconductor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0278261A JPH0278261A (en) | 1990-03-19 |
| JPH07120740B2 true JPH07120740B2 (en) | 1995-12-20 |
Family
ID=16913899
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63230827A Expired - Fee Related JPH07120740B2 (en) | 1988-09-13 | 1988-09-13 | Lead frame for semiconductor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120740B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5661336A (en) * | 1994-05-03 | 1997-08-26 | Phelps, Jr.; Douglas Wallace | Tape application platform and processes therefor |
| TW446627B (en) * | 1998-09-30 | 2001-07-21 | Toyo Kohan Co Ltd | A clad sheet for lead frame, a lead frame using thereof and a manufacturing method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS48102060A (en) * | 1972-04-07 | 1973-12-21 | ||
| JPS6091659A (en) * | 1983-10-26 | 1985-05-23 | Kawasaki Steel Corp | Matrix for lead frame of semiconductor apparatus |
| JPS60196962A (en) * | 1984-03-21 | 1985-10-05 | Daido Steel Co Ltd | Material for lead frame |
-
1988
- 1988-09-13 JP JP63230827A patent/JPH07120740B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0278261A (en) | 1990-03-19 |
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