JPH07117432B2 - Method of manufacturing composite sensor - Google Patents
Method of manufacturing composite sensorInfo
- Publication number
- JPH07117432B2 JPH07117432B2 JP33350591A JP33350591A JPH07117432B2 JP H07117432 B2 JPH07117432 B2 JP H07117432B2 JP 33350591 A JP33350591 A JP 33350591A JP 33350591 A JP33350591 A JP 33350591A JP H07117432 B2 JPH07117432 B2 JP H07117432B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- substrate
- manufacturing
- thin film
- electrical resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【0001】[0001]
【産業上の利用分野】本発明は、エアコン製品の環境計
測センサに適用される1チップ(一体型)複合センサの
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a one-chip (integrated type) composite sensor applied to an environment measurement sensor of an air conditioner product.
【0002】[0002]
【従来の技術】高分子材料と金属材料とを組み合わせた
複合センサの製造は半導体製造等のプレーナ技術を用い
て行なう。2. Description of the Related Art A composite sensor in which a polymer material and a metal material are combined is manufactured by using a planar technique such as semiconductor manufacturing.
【0003】従来の製造プロセス手順は、図5に示すよ
うに、センサチップ11の基板上に金属材料による薄膜
電気抵抗センサ12をスパッタ蒸着およびウエット加工
によりパターン形成し(図5(a)参照)、次に、同基
板へ薄膜静電容量センサ13をスピンコート塗布、ドラ
イ加工、スパッタ蒸着によりパターン形成し(図5
(b)参照)、その後、12のセンサ機能を多機能化さ
せるために、薄膜電気抵抗センサ12の下部の基板を部
分的に薬液を用いてエッチング加工していた(図5
(c)参照)。In the conventional manufacturing process procedure, as shown in FIG. 5, a thin film electrical resistance sensor 12 made of a metal material is patterned on a substrate of a sensor chip 11 by sputter deposition and wet processing (see FIG. 5A). Then, the thin film capacitance sensor 13 is formed on the substrate by spin coating, dry processing, and sputter deposition to form a pattern (see FIG. 5).
Then, in order to make the sensor function of 12 multifunctional, the substrate under the thin film electrical resistance sensor 12 was partially etched using a chemical solution (FIG. 5).
(See (c)).
【0004】そのプロセスフローを図6に示す。すなわ
ち、従来は、100工程(ウエットプロセス)で薄膜電
気抵抗センサ12を形成し、102工程(ドライプロセ
ス)で薄膜静電容量センサ13を形成し、101工程
(ウエットプロセス)で薬液による基板の部分エッチン
グを実施していた。The process flow is shown in FIG. That is, conventionally, the thin film electrical resistance sensor 12 is formed in 100 steps (wet process), the thin film capacitance sensor 13 is formed in 102 step (dry process), and the portion of the substrate made of the chemical solution is formed in 101 step (wet process). Etching was performed.
【0005】[0005]
【発明が解決しようとする課題】ところが、上記したよ
うな従来のプロセス手順では、センサ基板エッチング工
程にて、図7に示すように製造ミスにより基板の一部に
割れが発生した際、薄膜静電容量センサ13aの如くそ
のセンサが全滅していた。また、基板エッチング時の薬
液に薄膜静電容量センサ13が浸食され、同センサ13
の性能劣化が見られていた。However, in the conventional process procedure as described above, when the sensor substrate etching step causes a crack in a part of the substrate due to a manufacturing error as shown in FIG. That sensor, like the capacitance sensor 13a, has been wiped out. In addition, the thin film capacitance sensor 13 is eroded by the chemical solution when the substrate is etched,
Performance deterioration was observed.
【0006】本発明は上記のような点に鑑みなされたも
ので、製造ミスによる基板割れが生じても、他への影響
を完全に防止することのできる複合センサの製造方法を
提供することを目的とする。The present invention has been made in view of the above points, and it is an object of the present invention to provide a method of manufacturing a composite sensor capable of completely preventing other influences even if a substrate crack occurs due to a manufacturing error. To aim.
【0007】[0007]
【課題を解決するための手段】本発明は、高分子材料と
金属材料とを組み合わせた複合センサの製造方法におい
て、製造プロセス手順を変更し、基板上に薄膜電気抵抗
センサをパターン形成した後、薬液による基板エッチン
グを行い、その後に薄膜静電容量センサをパターン形成
することにより、基板エッチング加工時の割れの発生に
対して、薄膜静電容量センサのエッチング液による浸食
および同センサの性能劣化を無くすようにしたものであ
る。The present invention is a method for manufacturing a composite sensor in which a polymer material and a metal material are combined, the manufacturing process procedure is changed, and after patterning a thin film electrical resistance sensor on a substrate, By etching the substrate with a chemical solution and then forming a pattern on the thin film capacitance sensor, erosion by the etching liquid of the thin film capacitance sensor and deterioration of the performance of the sensor against the occurrence of cracks during the substrate etching process It is something that I tried to lose.
【0008】[0008]
【作用】上記したような本発明の製造方法によれば、製
造ミスが起こりやすいセンサ基板のエッチング加工プロ
セスにおいて、多少ミスが生じても、その加工に用いた
薬液に浸食されやすい薄膜静電容量センサの不具合を完
全に防止でき、それに伴いセンサ製造歩留りを向上させ
ることができる。According to the manufacturing method of the present invention as described above, even if some mistakes occur in the etching process of the sensor substrate, which is prone to manufacturing errors, the thin film capacitance which is easily eroded by the chemical used for the processing. The failure of the sensor can be completely prevented, and the sensor manufacturing yield can be improved accordingly.
【0009】[0009]
【実施例】以下、図面を参照して本発明の実施例を説明
する。Embodiments of the present invention will be described below with reference to the drawings.
【0010】図3に製造単位のセンサ基板の構成を示
す。図3において、10はセンサ基板全体で、製造プロ
セスはこの単位で進められて行く。センサ基板中1個を
示したものが、センサチップ11でそのA−A´断面に
ついて図1および図2にその製造プロセス手順を示す。FIG. 3 shows the structure of the sensor substrate of each manufacturing unit. In FIG. 3, reference numeral 10 denotes the entire sensor substrate, and the manufacturing process proceeds in this unit. One of the sensor substrates is the sensor chip 11, and FIG. 1 and FIG. 2 show the manufacturing process procedure for the AA ′ cross section.
【0011】すなわち、本発明の製造方法は、まず、1
00工程(ウエットプロセス)で、薄膜電気抵抗センサ
12(気流センサまたは輻射センサ)のセンサ材(金属
材料)をセンサチップ11の基板上にスパッタ蒸着し、
薬液加工(ウエット加工)によりパターン形成する(図
1(a)参照)。次に、101工程(ウエットプロセ
ス)で、センサチップ11の下部の基板を部分的に薬液
を用いてエッチング加工を行なう(図1(b)参照)。
この基板エッチング加工の後、102工程(ドライプロ
セス)で、薄膜静電容量センサ13のセンサ材(高分子
材料)をスピンコート塗布し、非薬液加工(ドライ加
工)によりパターン形成を行なって複合センサを製造し
ていく。That is, the manufacturing method of the present invention is as follows:
In step 00 (wet process), the sensor material (metal material) of the thin film electrical resistance sensor 12 (air flow sensor or radiation sensor) is sputter-deposited on the substrate of the sensor chip 11.
A pattern is formed by chemical solution processing (wet processing) (see FIG. 1A). Next, in step 101 (wet process), the substrate below the sensor chip 11 is partially etched using a chemical solution (see FIG. 1B).
After the substrate etching process, in a 102 step (dry process), the sensor material (polymer material) of the thin film capacitance sensor 13 is spin-coated, and a pattern is formed by non-chemical solution processing (dry processing) to form a composite sensor. To manufacture.
【0012】なお、本実施例では、ドライ加工法とし
て、リアクティブイオンエッチングを行なった。また、
薄膜電気抵抗センサ12用の金属材料としてはチタンを
用い、薄膜静電容量センサ13用の高分子材料としては
ポリイミドを用いた。In this example, reactive ion etching was performed as a dry processing method. Also,
Titanium was used as the metal material for the thin film electrical resistance sensor 12, and polyimide was used as the polymer material for the thin film capacitance sensor 13.
【0013】このように、薬液による基板エッチング後
に薄膜静電容量センサ13を形成することで、図4に示
すように、製造ミスによる基板割れが生じても(図4
(b)参照)、割れた所だけの不具合に止まり、他への
影響を完全に防止できる(図4(c)参照)。これによ
り、基板エッチング加工時の割れの発生に対して、薄膜
静電容量センサのエッチング液による浸食および同セン
サの性能劣化を無くすことができる。Thus, by forming the thin film capacitance sensor 13 after etching the substrate with the chemical solution, as shown in FIG. 4, even if the substrate is cracked due to a manufacturing error (FIG. 4).
(Refer to (b)), but it is possible to stop the trouble only at the cracked portion, and to completely prevent the influence on others (refer to FIG. 4 (c)). As a result, it is possible to prevent erosion of the thin-film capacitance sensor due to the etching solution and deterioration of the performance of the sensor against the occurrence of cracks during the substrate etching process.
【0014】[0014]
【発明の効果】以上のように本発明によれば、高分子材
料と金属材料とを組み合わせた複合センサの製造方法に
おいて、製造ミスによる基板割れが生じても、割れた所
だけの不具合に止まり、他への影響を完全に防止でき
る。したがって、センサ製造歩留りが向上し、センサ価
格等を安く抑えることができる。As described above, according to the present invention, in a method of manufacturing a composite sensor in which a polymer material and a metal material are combined, even if a substrate is cracked due to a manufacturing error, only the cracked portion is defective. , Can completely prevent the influence on others. Therefore, the sensor manufacturing yield is improved, and the sensor price can be kept low.
【0015】さらに、今までの製造プロセスの手順を変
えるだけで、その条件等を変える必要がなく、また、セ
ンサ部をカバーする治具等が不要となり、経費低下の利
点もある。Furthermore, it is not necessary to change the conditions and the like by simply changing the procedure of the manufacturing process up to now, and a jig or the like for covering the sensor part is not necessary, which has the advantage of cost reduction.
【図1】本発明の一実施例に係る製造方法を説明するた
めの断面図。FIG. 1 is a sectional view for explaining a manufacturing method according to an embodiment of the present invention.
【図2】同実施例の製造方法を説明するためのフローチ
ャート。FIG. 2 is a flowchart for explaining the manufacturing method of the embodiment.
【図3】製造単位の基板の構成を示す図。FIG. 3 is a diagram showing a configuration of a substrate of a manufacturing unit.
【図4】本発明の製造方法を用いた場合の基板割れ状態
を示す図。FIG. 4 is a view showing a cracked state of a substrate when the manufacturing method of the present invention is used.
【図5】従来の製造方法を説明するための断面図。FIG. 5 is a sectional view for explaining a conventional manufacturing method.
【図6】従来の製造方法を説明するためのフローチャー
ト。FIG. 6 is a flowchart for explaining a conventional manufacturing method.
【図7】従来の製造方法を用いた場合の基板割れ状態を
示す図。FIG. 7 is a view showing a cracked state of a substrate when a conventional manufacturing method is used.
10…センサ基板、11…センサチップ、12…薄膜電
気抵抗センサ、13…薄膜静電容量センサ、13a…浸
食された薄膜静電容量センサ。Reference numeral 10 ... Sensor substrate, 11 ... Sensor chip, 12 ... Thin film electrical resistance sensor, 13 ... Thin film capacitance sensor, 13a ... Corroded thin film capacitance sensor.
Claims (1)
複合センサの製造方法において、 基板上に金属材料による薄膜電気抵抗センサをパターン
形成した後、上記薄膜電気抵抗センサの下部の上記基板
を薬液を用いてエッチング加工し、その後、上記基板に
高分子材料による薄膜静電容量センサをドライ加工によ
りパターン形成することを特徴とする複合センサの構造
方法。1. A method of manufacturing a composite sensor in which a polymer material and a metal material are combined, wherein a thin film electrical resistance sensor made of a metal material is patterned on a substrate, and then the substrate below the thin film electrical resistance sensor is chemically treated. And forming a thin film capacitance sensor made of a polymer material on the substrate by dry processing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33350591A JPH07117432B2 (en) | 1991-12-17 | 1991-12-17 | Method of manufacturing composite sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33350591A JPH07117432B2 (en) | 1991-12-17 | 1991-12-17 | Method of manufacturing composite sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH05164578A JPH05164578A (en) | 1993-06-29 |
JPH07117432B2 true JPH07117432B2 (en) | 1995-12-18 |
Family
ID=18266803
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP33350591A Expired - Lifetime JPH07117432B2 (en) | 1991-12-17 | 1991-12-17 | Method of manufacturing composite sensor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07117432B2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100363687B1 (en) * | 2000-04-20 | 2002-12-05 | (주) 네오멤스 | Sensor of fabrication of onebodied temperature/humidity sensor |
CN104764481B (en) * | 2015-04-08 | 2017-01-25 | 合肥工业大学 | Full-compliancy capacitance and resistance dual mode proximate sense transducer |
-
1991
- 1991-12-17 JP JP33350591A patent/JPH07117432B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH05164578A (en) | 1993-06-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 19960611 |