JPH0683063A - Chemical-ray polymerizable composition - Google Patents

Abstract

PURPOSE:To obtain a chemical-ray polymerizable compsn. having satisfactory UV transmittance and heat resistance and capable of patterning by photolithography by incorporating a specified silane compd. CONSTITUTION:This chemical-ray polymerizable compsn. contains a silane compd. represented by the formula, 0.2-4 times (mol) as much water as all alkoxy groups in the silane compd., 0.1-10 times (weight) as much org. solvent as the silane compd. and 0.01-10mol% acid or base based on the amt. of the silane compd. In the formula, R1 is benzyl having 1-4 methoxy and/or nitro substituents, R2 is 1-6C monovalent hydrocarbon, 2-methoxyethyl, 2-ethoxyethyl, 2-methoxypropyl, 2-ethoxypropyl, etc., R3 is 1-12C monovalent hydrocarbon, phenyl, naphthyl, vinyl, glycidyl, glycidoxypropyl or epoxycyclohexylethyl, (m) is 1-4, (n) is 0-3, (p) is 0-3 and m+n+p=4.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an actinic radiation-polymerizable composition, and more particularly to a silicon compound which can be patterned by the progress of a polymerization reaction by actinic rays such as ultraviolet rays.

[0002]

2. Description of the Related Art In recent years, in the semiconductor industry, an EEPROM (Exposed Erasab) capable of erasing the contents stored by light.
Le Programmable Read Only Memory) is in high demand. This memory can be rewritten by irradiating the memory chip with 254 nm ultraviolet light. For this purpose, quartz glass has hitherto been used as a window material, but for that purpose, the package must be made of ceramics. However, there is a problem that the ceramic package is very expensive and the cost of the product cannot be reduced.

On the other hand, in many other products, plastic packaging is used to reduce the cost of the product. In this case, the difference in the coefficient of thermal expansion between the resin of the package and the silicon chip is used. In order to reduce the heat stress caused by the above, a heat resistant resin such as polyimide is thinly applied to the surface of the silicon chip.

It is conceivable to apply this technique to an EEPROM, but when it is necessary to irradiate a product with ultraviolet rays as in the case of the EEPROM, the polyimide conventionally used does not transmit ultraviolet rays, which is impossible.

[0005]

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide an actinic radiation-polymerizable composition which has good UV transparency and heat resistance and can be patterned by a photolithography technique. .

[0006]

The object of the present invention is as follows.
This can be achieved by adopting the following configuration.

(1) (a) A silane compound containing 30 to 100 mol% of the silane compound (A) represented by the general formula [I],

[Chemical 3] (However, R ₁ is a benzyl group substituted with 1 to 4 methoxy groups and / or nitro groups, and R ₂ is 1 to C 1 to C 6.
Valent hydrocarbon group, 2-methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy-propyl group, phenyl group, or naphthyl group, R ₃
Is a C1-C12 monovalent hydrocarbon group, a phenyl group, a naphthyl group, a vinyl group, a glycidyl group, a glycidoxypropyl group, or an epoxycyclohexylethyl group, and m is 1
To an integer of 4, n is an integer of 0 to 3, p is an integer of 0 to 3, m
+ N + p = 4) (b) 0.2 to 4 times the molar amount of water with respect to the total amount of alkoxy groups in the silane compound, (c) 0.1 to 10 times by weight the organic solvent with respect to the silane compound, (D) An actinic radiation-polymerizable composition containing 0.01 to 10 mol% of an acid or a base with respect to the silane compound.

(2) The silane compound (B) represented by the general formula [II] is 7 in the silane compound in the above (1).
The actinic radiation-polymerizable composition is contained in an amount of 0 mol% or less.

[0009]

[Chemical 4] (However, R ₄ is a C1-C6 monovalent hydrocarbon group, 2-
Methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy-propyl group, or phenyl group, R ₅ is a C1 to C12 monovalent hydrocarbon group, phenyl group, naphthyl group, Vinyl group, glycidyl group, glycidoxypropyl group, or epoxycyclohexylethyl group, q is an integer of 1 to 4, r is an integer of 0 to 3, q + r = 4) Silane compound (A) in the present invention
Is represented by the following general formula [I].

[0010]

[Chemical 5] In general formula [I], R ₁ is a benzyl group substituted with 1 to 4 methoxy groups and / or nitro groups. R ₁ O
Is an alkoxy group that is eliminated by irradiation with light and is hydrolyzed to form a silanol group. The silanol groups formed by hydrolysis cause dehydration condensation, and the polymerization of the silane compound proceeds to make it insoluble in the solvent. Have.
Examples of such an alkoxy group (R ₁ O) include a nitrobenzylalkoxy group, a dinitrobenzylalkoxy group,
Examples include, but are not limited to, a trinitrobenzylalkoxy group, a methoxybenzylalkoxy group, a dimethoxybenzylalkoxy group, a trimethoxybenzylalkoxy group, a nitromethoxybenzylalkoxy group, a dinitromethoxybenzylalkoxy group, and a nitrodimethoxybenzylalkoxy group. Any alkoxy group that can be eliminated by light may be used. Particularly preferred among the above are an o-nitrobenzylalkoxy group, a dinitrobenzylalkoxy group, a methoxybenzylalkoxy group and a trimethoxybenzylalkoxy group. Also, m is 1 to
When m is 2 or more, R _{1 s} may be the same or different.

In the above general formula [I], R ₂ is a C1 to C6 monovalent hydrocarbon group, 2-methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy- group. Represents a propyl group, a phenyl group, or a naphthyl group. Of these, preferred are a methyl group, an ethyl group,
A 2-methoxy-ethyl group and a 2-methoxy-propyl group. Further, n represents an integer of 0 to 3, and when n is 2 or more, R _{2 s} may be the same as or different from each other.

R ₃ represents a C1 to C12 monovalent hydrocarbon group, a phenyl group, a naphthyl group, a vinyl group, a glycidyl group, a glycidoxypropyl group, or an epoxycyclohexylethyl group. Among these, the preferred one is
A methyl group and a phenyl group. Further, p is an integer of 0 to 3 and m + n + p = 4. When p is 2 or more,
R ₃ may be the same as or different from each other.

Specific examples of the silane compound (A) include methyldimethoxy-nitrobenzylalkoxysilane, phenyldiethoxy-methoxybenzylalkoxysilane, ethyldimethoxypropoxy-dinitrobenzylalkoxysilane, and epoxycyclohexylethyldimethoxyethoxy-dimethoxybenzylalkoxysilane. ,
Glycidoxypropyldiphenoxy-nitromethoxybenzylalkoxysilane, glycidylmethoxyethoxy-ethoxyethoxy-trinitrobenzylalkoxysilane, naphthylnaphthoxy-butoxy-dimethoxynitrobenzylalkoxysilane, propylmethoxy-ethoxy-trimethoxybenzylalkoxysilane, Phenylethoxy-bis (nitrobenzylalkoxy) silane, methylmethoxy-bis (methoxybenzylalkoxy) silane, methyl-tris (dinitrobenzylalkoxy) silane, tetrakis (methoxybenzylalkoxy) silane, nitrobenzylalkoxy-methoxybenzylalkoxy-dinitrobenzyl Alkoxy-trimethoxybenzylalkoxysilane, ethyl-nitrobenzylalkoxy- Toxybenzylalkoxy-methoxysilane, phenyl-dinitrobenzylalkoxy-methoxynitrobenzylalkoxy-dimethoxybenzylalkoxysilane, dimethylmethoxy-nitrobenzylalkoxysilane, diphenylmethoxy-methoxybenzylalkoxysilane, dimethyl-bis (dinitrobenzylalkoxy) silane, trimethyl Examples include, but are not limited to, silane compounds such as -nitrobenzylalkoxysilane. These may be used alone or in combination of two or more.

Since the silane compound (A) has practical photosensitivity and solubility, the silane compound (A) is 30 to 1 in all silane compounds.
It is important that the content is 00 mol%, and it is more preferable that the content is 50 mol% or more. If it is less than 30 mol%, problems such as poor sensitivity, poor solubility in a solvent, or inability to dissolve occur.

The silane compound (B) represented by the following general formula [II] of the present invention is used together with the silane compound (A), and a known silane compound can be appropriately used.

[0016]

[Chemical 6] In the general formula [II], R ₄ represents a C1-C6 monovalent hydrocarbon group, 2-methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy-propyl group, Or, it represents a phenyl group, and among these, a methyl group, an ethyl group, a 2-methoxy-ethyl group, and a 2-methoxy-propyl group are particularly preferable. Also, q is 1 to
When q is 2 or more, R _{4 s} may be the same or different from each other.

R ₅ represents a C1-C12 monovalent hydrocarbon group, a phenyl group, a naphthyl group, a vinyl group, a glycidyl group, a glycidoxypropyl group, or an epoxycyclohexylethyl group, and among these, particularly preferred. Are a methyl group and a phenyl group. Further, r represents an integer of 0 to 3, and q + r = 4. When r is 2 or more, R
₅ may be the same as or different from each other.

As typical examples of the silane compound (B), tetramethylalkoxysilane, tetraethylalkoxysilane, tetrapropylalkoxysilane, methyltrimethoxysilane, methyltriethoxysilane, methyltripropoxysilane, ethyltrimethoxysilane, Ethyltriethoxysilane, phenyltrimethoxysilane, phenyltriethoxysilane, dimethyldimethoxysilane, dimethyldiethoxysilane, methyl-tris (2-methoxy-propoxy) silane, methyl-tris (2-methoxy-ethoxy) silane, vinyltri Methoxysilane, naphthyltriphenoxysilane, methyltriphenoxysilane, glycidyl (trimethoxy) silane, glycidoxypropyl (triethoxy) silane, epoxycyclohexyl Such as chill (triethoxy) silane include, but are not limited to. Among these, alkyltrialkoxysilanes such as methyltriethoxysilane and phenyltrimethoxysilane in which r is 1 are particularly preferable in terms of solubility. Silane compound (B)
Is preferably contained in an amount of 0 to 70 mol% in all silane compounds, and more preferably 50 mol% or less.

The water in the present invention is necessary for hydrolyzing the alkoxy group of the silane compound to produce a silanol group. The amount used is theoretically equivalent to the total amount of alkoxy groups in the silane compound, but in practice, it is important that the amount is 0.2 to 4 times the molar amount, and preferably 0.8 to 1 0.2 times the molar amount.

The organic solvent used in the present invention is for dissolving a silane compound and water, for example, alcohol solvents such as methanol, ethanol, propanol, butanol, ethylene glycol monoethyl ether, ethylene glycol monomethyl. Glycol solvents such as ether acetate, propylene glycol monomethyl ether, diethylene glycol diacetate, methyl ethyl ketone, diisobutyl ketone,
Ketone solvents such as methyl isobutyl ketone, dipolar aprotic solvents such as dimethylformamide, dimethylacetamide, dimethylsulfoxide, 1-methyl-2-pyrrolidone, γ-butyrolactone and the like can be used, and among these, especially dipolar. Aprotic solvents are preferable in terms of solubility. It is important to use these organic solvents in an amount of 0.1 to 10 times by weight based on all silane compounds. If the amount used is less than 0.1 times by weight, gelation may occur, and if it exceeds 10 times by weight, unevenness in the coating film tends to occur, which is not preferable.

In the present invention, the acid or base acts as a catalyst for hydrolyzing the silane compound with water. Generally, as the catalyst, acids are preferably used in terms of hydrolysis rate and stability. It is important to add 0.01 to 10 mol% of these additives. It is preferably 0.1 to 5 mol%.

As the acid, hydrochloric acid, sulfuric acid, nitric acid, acetic acid, phosphoric acid, trifluoroacetic acid, methanesulfonic acid, monochloroacetic acid and the like are preferably used. As the base, ammonia, methylamine, ethylamine, propylamine,
Dimethylamine, diethylamine, trimethylamine,
Amines such as triethylamine and tetramethylammonium hydroxide are preferably used. When the present invention is used for a protective film of a semiconductor device, an interlayer insulating film, etc., it is not preferable to use a base having an alkali metal such as sodium hydroxide or sodium carbonate because it contaminates the semiconductor device. .

Further, as these catalysts, a photoacid generator which generates an acid upon irradiation with light and a photoamine generator which generates an amine can be used alone or in combination with other catalysts. Examples of the photo acid generator include benzoin tosylate, triphenylsulfonium triflate, diphenyliodonium fluorophosphate and the like. Further, as the photoamine generator, those obtained by reacting an amine isocyanate compound such as cyclohexylamine, hexamethylenediamine, ethylenediamine, diaminohexane, benzylamine, diaminodiphenyl ether, or aniline with nitrobenzyl alcohol or methoxybenzyl alcohol are used. It

To further improve the photosensitivity of the present invention, a sensitizer such as Michler's ketone may be mixed in an amount of 1 to 30% by weight based on the total silane compound.

A photosensitive solution is obtained by mixing the above components.

Next, the method of using the solution of the composition of the present invention will be described.

First, the present solution is applied onto a substrate such as a silicon wafer or a ceramics plate by a method such as spin coating or spraying. Next, heat is applied to evaporate unnecessary solvent to form a film. If the temperature at this time exceeds 120 ° C, the alkoxy group having photosensitivity may also be hydrolyzed and the photosensitivity may be lost. Therefore, the temperature usable in this step is preferably 120 ° C or lower. , And more preferably 100 ° C. or lower. After that, exposure processing is performed. The exposure can be performed by an apparatus such as an aligner or a stepper which is currently preferably used in the semiconductor industry. Since the present invention has poor sensitivity to long wavelengths, it is preferable to use i-line (365 nm) of a high pressure mercury lamp, excimer laser (308 nm or 248 nm), etc. Instead, continuous light, a mixture of a plurality of wavelengths, or the like can be preferably used.

After exposure, baking is performed again at a temperature of about 100 ° C. to facilitate dehydration condensation of silanol groups generated by light. Also in this case, if the temperature is higher than 120 ° C., the residual alkoxy groups in the unexposed area are thermally eliminated to cause dehydration condensation.
It is preferable to bake at a temperature of ℃ or less. In many cases, this step can be omitted.

After that, development is performed. N as a developer
Dipolar aprotic solvents such as N-dimethylformamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, γ-butyrolactone, dimethylacetamide, sulfolane and methanol, ethanol, propanol, butanol, ethylene glycol, propylene glycol, ethylene glycol monoethyl. Ethers, alcohols such as propylene glycol monomethyl ether, ethers such as tetrahydrofuran and dioxane, acetones, methyl ethyl ketone, methyl isobutyl ketone, diisobutyl ketone, cyclohexanone and other ketones,
Alternatively, a mixture of these can be preferably used.
Also, an aqueous solution of an organic amine such as tetramethylammonium hydroxide can be used.

Examples of these developing methods include a method of immersing in the developing solution, a method of spraying while rotating, and a method of pouring the solution on a substrate.
In the present invention, an appropriate developing method can be selected depending on the situation.

After the development, further high temperature is applied to react all silanol groups to complete polysiloxane resin.
In this case, the preferable temperature is 200 ° C. or higher, and more preferably 250 ° C. or higher and 500 ° C. or lower. If this temperature is lower than 200 ° C., unreacted silanol groups may remain, which may adversely affect adhesiveness and electrical characteristics. Further, if it exceeds 500 ° C., cracks may occur in the film, especially when the film thickness is 3 μm or more, which is not preferable.

The actinic radiation-polymerizable composition of the present invention is EEPR.
In addition to the protective film of OM, it can be naturally used in the application field of photosensitive resin such as photoresist, interlayer insulating film of semiconductor element or substrate, protective film of line sensor, protective film of color filter and the like.

[0033]

EXAMPLES The present invention will be specifically described below based on examples.

<Synthesis of Methyldimethoxy-o-nitrobenzylalkoxysilane> 22 g of methyltriacetoxysilane was dissolved in 30 ml of tetrahydrofuran, and a solution of 15.3 g of o-nitrobenzyl alcohol dissolved in 30 ml of tetrahydrofuran was added dropwise to the funnel. Was added dropwise over 10 minutes. This solution was reacted at 30 ° C. for 2 hours, and then 6.4 g of methanol was added dropwise over 3 minutes. After this, the reaction is carried out at 30 ° C for 1 hour, then 40 ° C
Was reacted for 2 hours. 10m of this solution with a vacuum pump
The pressure is reduced to mHg and vacuum distillation is performed, and the boiling point is 180 ° C to 1
The portion at 85 ° C was designated as methyldimethoxy-o-nitrobenzylalkoxysilane.

<Synthesis of methyldimethoxy-p-methoxynbenzylalkoxysilane> 22 g of methyltriacetoxysilane was dissolved in 30 ml of tetrahydrofuran, and 13.8 g of p-methoxybenzyl alcohol was added thereto.
Was dissolved in 30 ml of tetrahydrofuran and added dropwise with a dropping funnel over 10 minutes. At this time, a slight exotherm was observed. This solution was reacted at 30 ° C. for 2 hours, and then 6.4 g of methanol was added dropwise over 3 minutes. After this, 1
The reaction was carried out at 30 ° C. for 2 hours and further at 40 ° C. for 2 hours. This solution was subjected to vacuum distillation under reduced pressure of 10 mmHg with a vacuum pump, and the portion having a boiling point of 170 ° C. to 180 ° C. was made into methyldimethoxy-p-methoxybenzylalkoxysilane.

Example 1 7.74 g (50 mol%) of methyldimethoxy-o-nitrobenzylalkoxysilane, 2.72 g (33 mol%) of methyltrimethoxysilane and 1.98 g (17 mol%) of phenyltrimethoxysilane were added. 3.24 g of water, 2.18 g of N-methyl-2-pyrrolidone and 0.2 g of phosphoric acid were added, and the mixture was vigorously stirred. The solution gives a little fever initially,
Immediately enters steady state. This solution was reacted at 50 ° C. for 4 hours to obtain a photosensitive solution.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through a grayscale mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out for 2 minutes in a developer having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, a rinse with isopropanol was performed, and it was found that the pattern remained at the exposure amount of 300 mJ / cm ² or more, and the photosensitive property was provided.

Example 2 7.44 g (50 mol%) of methyldimethoxy-p-methoxybenzylalkoxysilane, 2.72 g (33 mol%) of methyltrimethoxysilane and 1.98 g (17 mol%) of phenyltrimethoxysilane were added. 3.24 g of water and N-
2.18 g of methyl-2-pyrrolidone and 0.2 g of acetic acid were added, and the mixture was vigorously stirred. The solution gives a little fever initially,
Immediately enters steady state. This solution was reacted at 50 ° C. for 4 hours to obtain a photosensitive solution.

A silicon wafer was spin-coated with the above-mentioned photosensitive solution, and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through a grayscale mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out for 2 minutes in a developer having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, a rinse with isopropanol was performed, and it was found that the pattern remained at the exposure amount of 500 mJ / cm ² or more, and the film had photosensitivity.

Example 3 A photosensitive solution was prepared by adding 0.1 g of triphenylsulfonium triflate to the composition of the photosensitive solution of Example 1.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through a grayscale mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out for 2 minutes in a developer having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, when rinsing was performed with isopropanol, it was found that the pattern remained at the exposure amount of 200 mJ / cm ² or more, and the film had photosensitivity.

Example 4 A photosensitive solution was prepared by further adding 0.1 g of benzoin tosylate to the composition of the photosensitive solution of Example 2.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through a grayscale mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out for 2 minutes in a developer having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, a rinse with isopropanol was performed, and it was found that the pattern remained at the exposure amount of 250 mJ / cm ² or more, and the film had a photosensitivity.

Example 5 12.85 g (100 mol%) of methyldimethoxy-o-nitrobenzylalkoxysilane was added to 2.70 g of water and N-.
Methyl-2-pyrrolidone 1.82 g, phosphoric acid 0.23 g
It was added to the inside and vigorously stirred. The solution initially gets a little exothermic, but soon reaches a steady state. This solution was reacted at 50 ° C. for 4 hours to obtain a photosensitive solution.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm ² through a grayscale mask.
(365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out for 2 minutes in a developer having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, when rinsing was performed with isopropanol, it was found that the pattern remained at the exposure amount of 150 mJ / cm ² and that the film had photosensitivity.

Comparative Example 1 2.58 g (20 mol%) of methyldimethoxy-o-nitrobenzylalkoxysilane, 4.08 g (60 mol%) of methyltrimethoxysilane and 1.98 g (20 mol%) of phenyltrimethoxysilane were added. 3.24 g of water, 2.18 g of N-methyl-2-pyrrolidone and 0.2 g of phosphoric acid were added, and the mixture was vigorously stirred. The solution gives a little fever initially,
Immediately enters steady state. This solution was reacted at 50 ° C. for 4 hours to obtain a photosensitive solution.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through a grayscale mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out in a developing solution having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After that, when rinsing was performed with isopropanol, it was found that even if it was immersed in a developing solution for 30 minutes, it did not dissolve and did not have photosensitivity.

Comparative Example 2 4.08 g (75 mol%) of methyltrimethoxysilane,
Phenyltrimethoxysilane 1.98 g (25 mol%)
3.24 g of water and N-methyl-2-pyrrolidone 2.18
g and 0.2 g of hydrochloric acid, and the mixture was vigorously stirred. The solution initially gets a little exothermic, but soon reaches a steady state. This solution was reacted at 50 ° C. for 4 hours to obtain a photosensitive solution.

The above-mentioned photosensitive solution was spin-coated on a silicon wafer, and baked on a hot plate at 80 ° C. for 3 minutes. Then, using a Canon contact aligner, 1 J / cm through the grace rail mask.
² (365 nm) exposure was performed.

This was baked again at 100 ° C. for 1 minute, and immersion development was carried out in a developing solution having a composition of 60 parts by weight of N-methyl-2-pyrrolidone and 40 parts by weight of xylene. After rinsing with isopropanol, it was found that the film did not dissolve even after being immersed in the developing solution for 30 minutes, and it did not have a photosensitive property.

[0057]

According to the present invention, it is possible to obtain an actinic radiation-polymerizable composition which has photosensitivity and can be patterned by a photolithography technique and which is excellent in ultraviolet light transmittance and heat resistance.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification code Office reference number FI technical display location H01L 21/312 C 7352-4M

Claims (2)

[Claims] 1. A silane compound containing 30 to 100 mol% of a silane compound (A) represented by the general formula [I]: (However, R ₁ is a benzyl group substituted with 1 to 4 methoxy groups and / or nitro groups, and R ₂ is 1 to C 1 to C 6.
Valent hydrocarbon group, 2-methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy-propyl group, phenyl group, or naphthyl group, R ₃
Is a C1-C12 monovalent hydrocarbon group, a phenyl group, a naphthyl group, a vinyl group, a glycidyl group, a glycidoxypropyl group, or an epoxycyclohexylethyl group, and m is 1
To an integer of 4, n is an integer of 0 to 3, p is an integer of 0 to 3, m
+ N + p = 4) (b) 0.2 to 4 times the molar amount of water with respect to the total amount of alkoxy groups in the silane compound, (c) 0.1 to 10 times by weight the organic solvent with respect to the silane compound, (D) An actinic radiation-polymerizable composition containing 0.01 to 10 mol% of an acid or a base with respect to the silane compound. 2. The silane compound (B) represented by the general formula [II] in the silane compound according to claim 1 is 70 mol%.
An actinic radiation-polymerizable composition characterized by being contained in the following range. [Chemical 2] (However, R ₄ is a C1-C6 monovalent hydrocarbon group, 2-
Methoxy-ethyl group, 2-ethoxy-ethyl group, 2-methoxy-propyl group, 2-ethoxy-propyl group, or phenyl group, R ₅ is a C1 to C12 monovalent hydrocarbon group, phenyl group, naphthyl group, Vinyl group, glycidyl group, glycidoxypropyl group, or epoxycyclohexylethyl group, q is an integer of 1 to 4, r is an integer of 0 to 3, q + r = 4)