JPH0682773A - Ferroelectric liquid crystal device - Google Patents

Ferroelectric liquid crystal device

Info

Publication number
JPH0682773A
JPH0682773A JP23248992A JP23248992A JPH0682773A JP H0682773 A JPH0682773 A JP H0682773A JP 23248992 A JP23248992 A JP 23248992A JP 23248992 A JP23248992 A JP 23248992A JP H0682773 A JPH0682773 A JP H0682773A
Authority
JP
Japan
Prior art keywords
liquid crystal
ferroelectric liquid
dielectric layer
crystal device
picture element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23248992A
Other languages
Japanese (ja)
Inventor
Shigeru Senbonmatsu
茂 千本松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Instruments Inc
Original Assignee
Seiko Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Instruments Inc filed Critical Seiko Instruments Inc
Priority to JP23248992A priority Critical patent/JPH0682773A/en
Publication of JPH0682773A publication Critical patent/JPH0682773A/en
Pending legal-status Critical Current

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  • Liquid Crystal (AREA)

Abstract

PURPOSE:To perform gradation display without lowering the cost of a ferroelectric liquid crystal device. CONSTITUTION:A ferroelectric liquid crystal device has picture element electrodes 2 and orienting films 3 on both sides of opposed insulating bases 1; a dielectric layer A4 and a dielectric layer B5 between at least either one-side picture element 2 and orienting film 3; and a ferroelectric liquid crystal 6 nipped between the insulating bases 1. Since the ferroelectric liquid crystal device has two kinds or more of dielectric constants on the picture element electrodes, the short-circuit between the opposed picture element electrodes can be prevented by the dielectric layer A4 or dielectric layer B5, and gradation display can be performed by the difference in dielectric constant between dielectric layers in one picture element. Since the difference between the dielectric layers can be easily formed in a good yield, this device has the effect in that the reduction in yield by refining of pattern by division of a conventional picture element electrode and the cost up by increase of driving IC can be significantly improved. Since the picture element electrode is not divided, this device further has the effect of never reducing aperture ratio.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、パーソナルコンピュー
タや液晶テレビ等の画像表示パネルなどに用いる強誘電
性液晶装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ferroelectric liquid crystal device used for an image display panel of a personal computer or a liquid crystal television.

【0002】[0002]

【従来の技術】従来、図2に示すように強誘電性液晶装
置は、対向するガラス基板1上に画素電極2を形成し、
一方に誘電体層9を積層し、配向膜3を積層し、ラビン
グ処理し、強誘電性液晶6を挟持する構造が一般的であ
る。図2に示す強誘電性液晶装置は、その特徴である双
安定性により、ツイストネマティック液晶装置で用いら
れている電圧やパルス幅変調などによる中間調表現が困
難であり、画素電極2を複数に分割し面積階調を行う方
式が一般的である。
2. Description of the Related Art Conventionally, as shown in FIG. 2, a ferroelectric liquid crystal device has a pixel electrode 2 formed on a glass substrate 1 facing each other.
A structure in which a dielectric layer 9 is laminated on one side, an alignment film 3 is laminated, a rubbing treatment is performed, and a ferroelectric liquid crystal 6 is sandwiched is generally used. The ferroelectric liquid crystal device shown in FIG. 2 is difficult to perform halftone representation by voltage or pulse width modulation used in the twisted nematic liquid crystal device due to its characteristic bistability. A general method is to divide and perform area gradation.

【0003】[0003]

【発明が解決しようとする課題】しかし、従来の面積階
調は走査電極や信号電極の増加と微細化により、製造歩
留りの低下や駆動用ICの増加により、コストを悪化さ
せるという課題と開口率の低下という品質上の課題があ
った。
However, the conventional area gradation has a problem that the cost is deteriorated due to a decrease in manufacturing yield and an increase in driving IC due to an increase in scanning electrodes and signal electrodes and miniaturization, and an aperture ratio. However, there was a quality problem of deterioration.

【0004】そこで、この発明の目的は、従来のこのよ
うな課題を解決するため、安価で容易な製造方法によ
り、面積階調を得ることである。
Therefore, an object of the present invention is to obtain an area gradation by an inexpensive and easy manufacturing method in order to solve such a conventional problem.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、この発明は対向する絶縁性基板の両側に画素電極と
配向膜を有し、少なくともどちらか一方の画素電極と配
向膜の間に誘電体層を有し、前記絶縁性基板間に強誘電
性液晶を挟持している強誘電性液晶装置において、前記
誘電体層の構成を膜厚あるいは比誘電率の違いにより一
画素電極上で二種類以上にした。
In order to solve the above-mentioned problems, the present invention has a pixel electrode and an alignment film on both sides of an insulating substrate facing each other, and at least one of the pixel electrode and the alignment film is provided between the pixel electrode and the alignment film. In a ferroelectric liquid crystal device having a dielectric layer and sandwiching a ferroelectric liquid crystal between the insulating substrates, the structure of the dielectric layer is formed on one pixel electrode depending on the film thickness or the relative dielectric constant. I made two or more kinds.

【0006】[0006]

【作用】上記のように構成された強誘電性液晶装置にお
いては、一画素電極上の二種類以上の誘電率の異なる誘
電体層により、面積的にスレッショルド電圧が異なるこ
とを利用して階調表示を行うことが可能となる。
In the ferroelectric liquid crystal device having the above-described structure, the gradation voltage is obtained by utilizing the fact that two or more kinds of dielectric layers having different permittivities on one pixel electrode have different threshold voltages in area. It becomes possible to display.

【0007】[0007]

【実施例】以下に、この発明の実施例を図に基づいて説
明する。 (実施例1)図1(a)において、ガラス基板1上に画
素電極2を例えばITOを用いてパターンを形成した。
その後、比誘電率がεSAの誘電体層A4と比誘電率がε
SBの誘電体層B5を画素電極2上に例えばそれぞれ膜厚
が等しく面積が1/2になるように形成した。例えばこ
こでは、誘電体層A4にTa2O3膜、誘電体層B5にS
iO2膜を用いたのでεSA>εSBの関係となり、その誘
電率はεA>εBとなる。さらに、誘電体層A4と誘電体
層B5上に配向膜を積層し、ラビング処理を施し、例え
ば本実施例では画素電極上に配向膜のみを積層した対向
ガラス基板との間に強誘電性液晶6を挟持し、強誘電性
液晶装置を形成した。ここで、画素電極2と誘電体層A
4が積層されている部分の強誘電性液晶を液晶領域A
7、画素電極2と誘電体層B5が積層されている部分の
強誘電性液晶を液晶領域B8と呼ぶことにする。図1
(b)は、本実施例の強誘電性液晶装置の電圧−透過率
特性であり、図1(a)の液晶領域A7による第1の閾
値VthAと液晶領域B8による第2の閾値VthBを有し、
VthAとVthBの差ΔVthを利用して面積階調が可能であ
ることを示している。
Embodiments of the present invention will be described below with reference to the drawings. (Example 1) In FIG. 1A, a pattern was formed on a glass substrate 1 by using, for example, ITO as a pixel electrode 2.
After that, the dielectric layer A4 having a relative dielectric constant of εSA and the relative dielectric constant of εSA are ε
The dielectric layer B5 of SB was formed on the pixel electrode 2 so that, for example, the film thickness was the same and the area was 1/2. For example, here, a Ta2O3 film is formed on the dielectric layer A4 and an S layer is formed on the dielectric layer B5.
Since the iO2 film is used, the relationship of εSA> εSB is established, and the dielectric constant thereof is εA> εB. Further, an alignment film is laminated on the dielectric layers A4 and B5 and subjected to a rubbing treatment. For example, in this embodiment, a ferroelectric liquid crystal is provided between the alignment film and an opposing glass substrate having only the alignment film laminated on the pixel electrodes. 6 was sandwiched to form a ferroelectric liquid crystal device. Here, the pixel electrode 2 and the dielectric layer A
Ferroelectric liquid crystal in the portion where 4 is laminated is set to the liquid crystal region A.
7. The ferroelectric liquid crystal in the portion where the pixel electrode 2 and the dielectric layer B5 are laminated will be referred to as a liquid crystal region B8. Figure 1
1B is a voltage-transmittance characteristic of the ferroelectric liquid crystal device of the present embodiment, which has a first threshold value VthA by the liquid crystal area A7 and a second threshold value VthB by the liquid crystal area B8 in FIG. Then
It is shown that the area gradation can be performed by utilizing the difference ΔVth between VthA and VthB.

【0008】本実施例1では、画素電極上の誘電体層を
片側に2種類配置したが、種類を3種類以上にしたり、
両側に配置するなどして階調数を増加できることはいう
までもない。 (実施例2)本実施例1では、画素電極上の誘電体層の
2種類以上の誘電率の違いを比誘電率のことなる2種類
以上の誘電体層により構成したが、図3に示したように
1種類の誘電体層においても膜厚を変えることにより、
例えば液晶領域C10の誘電体層9(誘電率εC)を薄
くし液晶領域D11の誘電体層9(誘電率εD)を厚く
すると、εC>εDとなり実施例1と同様に、液晶領域C
10による第1の閾値VthCと液晶領域D11による第
2の閾値VthDを有し、VthCとVthDの差ΔVthを利用
して面積階調が可能となる。
In the first embodiment, two kinds of dielectric layers on the pixel electrode are arranged on one side, but the number of kinds may be three or more,
It goes without saying that the number of gradations can be increased by disposing them on both sides. (Embodiment 2) In the present embodiment 1, the difference in dielectric constant of two or more types of the dielectric layers on the pixel electrodes is constituted by two or more types of dielectric layers having different relative dielectric constants. By changing the film thickness even for one type of dielectric layer,
For example, if the dielectric layer 9 (dielectric constant εC) of the liquid crystal region C10 is thinned and the dielectric layer 9 (dielectric constant εD) of the liquid crystal region D11 is thickened, εC> εD, and the liquid crystal region C is the same as in the first embodiment.
A first threshold VthC of 10 and a second threshold VthD of the liquid crystal region D11 are provided, and the area gradation can be performed by utilizing the difference ΔVth between VthC and VthD.

【0009】(実施例3)さらに、比誘電率の異なる誘
電体層や膜厚の組み合わせあるいは積層により、画素電
極上の誘電体層の誘電率の違いを数種類形成し、実施例
1と同様に、面積階調を行うことができる。図4は、一
例として比誘電率εAの誘電体層4を画素電極2上に均
一に形成した後、比誘電率εBの誘電体層5を画素電極
2上の1/2の面積に形成した断面図である。液晶領域
E12の誘電率をεE液晶領域F13の誘電率をεFとす
るとεE>εFとなり実施例1と同様に、面積階調が可能
となる。
(Third Embodiment) Further, by combining or laminating dielectric layers having different relative dielectric constants or film thicknesses, several different dielectric constants of the dielectric layers on the pixel electrodes are formed. Area gradation can be performed. In FIG. 4, as an example, a dielectric layer 4 having a relative permittivity εA is uniformly formed on the pixel electrode 2, and then a dielectric layer 5 having a relative permittivity εB is formed in a half area on the pixel electrode 2. FIG. If the permittivity of the liquid crystal region E12 is εE and the permittivity of the liquid crystal region F13 is εF, then εE> εF, and area gradation is possible as in the first embodiment.

【0010】[0010]

【発明の効果】この発明は、以上説明したように対向す
る絶縁性基板の両側に画素電極と配向膜を有し、少なく
ともどちらか一方の画素電極と配向膜の間に誘電体層を
有し、前記絶縁性基板間に強誘電性液晶を挟持している
強誘電性液晶装置において、前記誘電体層の画素電極上
の誘電率を少なくとも2種類以上の強誘電性液晶装置に
したので、誘電体層により対向する画素電極間の短絡を
防止すると同時に、1画素における誘電体層の誘電率の
違いにより、階調表現を行うことができる。この誘電体
層の違いは容易にかつ歩留り良く形成することができる
ので、従来の画素電極の分割化によるパターンの微細化
による歩留りの低下、駆動用ICの増加によるコストア
ップを大幅に改善する効果がある。また、画素電極の分
割をしないので、開口率を低下させない効果がある。
As described above, according to the present invention, the pixel electrodes and the alignment film are provided on both sides of the opposing insulating substrates, and the dielectric layer is provided between at least one of the pixel electrodes and the alignment film. In the ferroelectric liquid crystal device in which the ferroelectric liquid crystal is sandwiched between the insulating substrates, the ferroelectric liquid crystal device having at least two types of dielectric constants on the pixel electrode of the dielectric layer is used. The body layer can prevent a short circuit between the opposing pixel electrodes, and at the same time, can express gradation by the difference in the dielectric constant of the dielectric layer in one pixel. Since the difference in the dielectric layers can be easily formed with a high yield, the yield is significantly reduced due to the miniaturization of the pattern due to the division of the conventional pixel electrode, and the cost increase due to the increase of the driving IC is significantly improved. There is. Moreover, since the pixel electrode is not divided, there is an effect that the aperture ratio is not lowered.

【図面の簡単な説明】[Brief description of drawings]

【図1】(a)本発明の実施例1の強誘電性液晶装置の
断面図を示した説明図である。 (b)本発明の強誘電性液晶装置の電圧−透過率特性を
示した説明図である。
FIG. 1A is an explanatory diagram showing a cross-sectional view of a ferroelectric liquid crystal device according to a first embodiment of the present invention. (B) It is explanatory drawing which showed the voltage-transmittance characteristic of the ferroelectric liquid crystal device of this invention.

【図2】従来の強誘電性液晶装置の断面図を示した説明
図である。
FIG. 2 is an explanatory diagram showing a cross-sectional view of a conventional ferroelectric liquid crystal device.

【図3】本発明の実施例2の強誘電性液晶装置の断面図
を示した説明図である。
FIG. 3 is an explanatory diagram showing a cross-sectional view of a ferroelectric liquid crystal device according to a second embodiment of the present invention.

【図4】本発明の実施例3の強誘電性液晶装置の断面図
を示した説明図である。
FIG. 4 is an explanatory diagram showing a cross-sectional view of a ferroelectric liquid crystal device according to a third embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 ガラス基板 2 画素電極 3 配向膜 4 誘電体層A 5 誘電体層B 6 強誘電性液晶 7 液晶領域A 8 液晶領域B 9 誘電体層 10 液晶領域C 11 液晶領域D 12 液晶領域E 13 液晶領域F 1 Glass Substrate 2 Pixel Electrode 3 Alignment Film 4 Dielectric Layer A 5 Dielectric Layer B 6 Ferroelectric Liquid Crystal 7 Liquid Crystal Region A 8 Liquid Crystal Region B 9 Dielectric Layer 10 Liquid Crystal Region C 11 Liquid Crystal Region D 12 Liquid Crystal Region E 13 Liquid Crystal Area F

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 対向する絶縁性基板の両側に画素電極と
配向膜を有し、少なくともどちらか一方の画素電極と配
向膜の間に誘電体層を有し、前記絶縁性基板間に強誘電
性液晶を挟持している強誘電性液晶装置において、 前記画素電極上の誘電体層は、少なくとも2種類の膜厚
を有することを特徴とする強誘電性液晶装置。
1. A ferroelectric film having a pixel electrode and an alignment film on both sides of an opposing insulating substrate, a dielectric layer between at least one of the pixel electrode and the alignment film, and a ferroelectric layer between the insulating substrates. In a ferroelectric liquid crystal device sandwiching an organic liquid crystal, the dielectric layer on the pixel electrode has at least two types of film thickness.
【請求項2】 請求項1記載の強誘電性液晶装置におい
て、前記画素電極上の誘電体層は、比誘電率を異にする
少なくとも2種類の誘電体層からなることを特徴とする
強誘電性液晶装置。
2. The ferroelectric liquid crystal device according to claim 1, wherein the dielectric layer on the pixel electrode comprises at least two types of dielectric layers having different relative permittivities. Liquid crystal device.
【請求項3】 請求項1または請求項2記載の強誘電性
液晶装置において、前記画素電極上の誘電体層は、少な
くとも2層からなる複数層構造を有することを特徴とす
る強誘電性液晶装置。
3. The ferroelectric liquid crystal device according to claim 1, wherein the dielectric layer on the pixel electrode has a multi-layer structure including at least two layers. apparatus.
JP23248992A 1992-08-31 1992-08-31 Ferroelectric liquid crystal device Pending JPH0682773A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23248992A JPH0682773A (en) 1992-08-31 1992-08-31 Ferroelectric liquid crystal device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23248992A JPH0682773A (en) 1992-08-31 1992-08-31 Ferroelectric liquid crystal device

Publications (1)

Publication Number Publication Date
JPH0682773A true JPH0682773A (en) 1994-03-25

Family

ID=16940123

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23248992A Pending JPH0682773A (en) 1992-08-31 1992-08-31 Ferroelectric liquid crystal device

Country Status (1)

Country Link
JP (1) JPH0682773A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056286A (en) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd Substrate processing system
US8919756B2 (en) 2008-08-28 2014-12-30 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device, and coating device
US9214372B2 (en) 2008-08-28 2015-12-15 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device and coating device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056286A (en) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd Substrate processing system
US8919756B2 (en) 2008-08-28 2014-12-30 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device, and coating device
US9214372B2 (en) 2008-08-28 2015-12-15 Tokyo Ohka Kogyo Co., Ltd. Substrate processing system, carrying device and coating device

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