JPH0645578A - Thin film image sensor - Google Patents

Thin film image sensor

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Publication number
JPH0645578A
JPH0645578A JP19934692A JP19934692A JPH0645578A JP H0645578 A JPH0645578 A JP H0645578A JP 19934692 A JP19934692 A JP 19934692A JP 19934692 A JP19934692 A JP 19934692A JP H0645578 A JPH0645578 A JP H0645578A
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JP
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Patent type
Prior art keywords
line
image sensor
layer
wirings
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP19934692A
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Japanese (ja)
Inventor
Seisaku Minamibayashi
清作 南林
Original Assignee
Nec Corp
日本電気株式会社
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Abstract

PURPOSE:To realize a compact thin film image sensor provided with a matrix signal wiring parts in the least cross-talk between output signals at low cost. CONSTITUTION:This thin film image sensor is provided with interline shield wirings S in a matrix composing wiring parts while the interline shield wirings S are arranged along individual signal wirings P excluding the nearby part of the intersections of input individual signal wirings P with common signal wirings CL while the conductor layers of common signal wirings CL and those of the interline shield wirings S are separated from one another by interlayer insulating layers 13 so as to form the formed film layers in different levels.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は薄膜イメージセンサに係わり、特にファクシミリやイメージスキャナ等に用いられるマトリックス構成による薄膜イメージセンサの信号配線構造に関する。 The present invention relates relates to a thin image sensor, to signal wiring structure of a thin-film image sensor according to particular matrix configuration used in a facsimile or an image scanner or the like.

【0002】 [0002]

【従来の技術】近年、ファクシミリやイメージスキャナ等を薄型・小型化するために等倍光学系をもつ長尺密着型の薄膜イメージセンサ、特に光電変換素子と薄膜トランジスタ(TFT)を一体的に作製する方法が開発され、工数コストも減らし安価に提供する試みがなされている。 In recent years, the long contact type thin film image sensor having a unity magnification optical system in order to thin and compact facsimile or an image scanner or the like, especially to prepare a photoelectric conversion element and a thin film transistor (TFT) integrally the method has been developed, is inexpensively attempts to provide also reduces labor costs have been made.

【0003】なお、ファクシミリG3規格に準ずると、 [0003] It should be noted, and pursuant to the facsimile G3 standard,
光電変換素子の個数はA4サイズで1728個を配列して10mSの周期で読み取ることが必要であるが、TF Although the number of the photoelectric conversion element is required to be read at a period of 10mS by arranging 1728 pieces of A4 size, TF
Tの性能が一素子ごとに作動するだけのスピードに欠ける場合において、従来から出力信号線を複数本Mと複数本Nのブロック駆動線を有したマトリックス構成(M× In the case where T performance lack the speed of only runs every one sensing matrix structure having a block driving line of a plurality of M and a plurality of N output signal lines from the conventional (M ×
N=1728)が光電変換素子とTFTとを一体作製する薄膜イメージセンサでは一般的である。 N = 1728) are common in thin image sensor integrally fabricated photoelectric conversion element and TFT.

【0004】図2(A)は、光電変換素子1とTFTスイッチ素子2の直列体に蓄積コンデンサC Sと読み出しコンデンサC Rが接続され、これら素子と出力個別信号配線P 11 〜P NMとM本の共通信号配線部CLと(M+ [0004] FIG. 2 (A), the storage capacitor C S and the reading capacitor C R in series of photoelectric conversion elements 1 and the TFT switching element 2 is connected, an output individual signal lines with these elements P 11 to P NM and M common signal wiring portion of the CL and (M +
1)本の線間シールド配線S 1 〜S M+1 、及びN本の駆動配線部GLとでマトリックス構成によるセンサデバイスを成し、さらに、信号検出IC(集積回路)3と駆動IC4とに接続を成す薄膜イメージセンサの構成例の等価回路図を示す。 1) the line shielding wire S 1 to S M + 1 to the present, and form the sensor device according to a matrix composed of an N number of drive wiring portion GL, further to the signal detection IC (integrated circuit) 3 and drive IC4 It shows an equivalent circuit diagram of a configuration example of a thin film image sensor forming a connection.

【0005】図2(B)は、センサデバイスの断面を示し光電変換素子1と電源配線+V、及びこのサイド領域に配置された共通信号配線部CLの1部を示す成膜構造の部分断面図である。 [0005] FIG. 2 (B), the photoelectric shows the sensor device of reformatted element 1 and the power supply line + V, and a partial cross-sectional view of the film forming structure showing part of the common signal line part CL, which is arranged in the side region it is. ガラス基板11上に第1層目の導体層12が形成され、層間絶縁層13を介して光導電性半導体層14、第2層目の導体層15、が形成され、全体を保護層16で被覆している。 First layer of the conductor layer 12 is formed on the glass substrate 11, the photoconductive semiconductor layer 14 via an interlayer insulating layer 13, second layer of conductive layer 15, is formed, the whole protective layer 16 coated to have.

【0006】一方、線間シールド配線S(S M [0006] On the other hand, the line between the shield wiring S (S M,
M+1 )と共通信号配線部CL(CL M ,CL M-1 )とは同等のレベルの成膜層すなわち第2層目の導体層で構成され、線間シールド配線と共通信号配線とは交互に配置されて隣接共通信号配線間でのクロストークを低減する役目を成している。 S M + 1) and the common signal wiring portion CL (CL M, the CL M-1) is composed of a film layer or the second layer conductive layer in the same level, and the common signal line and the line shielding wire the forms serve to reduce crosstalk between adjacent common signal line are arranged alternately.

【0007】 [0007]

【発明が解決しようとする課題】この従来のマトリックス構成による薄膜イメージセンサの信号配線構造では、 [Problems that the Invention is to Solve] In the signal wiring structure of a thin film image sensor according to the conventional matrix structure,
光電変換素子の微弱な出力を上述したマトリックス配線を経由して読み出すことにより生じる各出力信号間でのクロストークを十分に小さくする目的は達成し得るものの、線間シールド配線と共通信号配線部とが占める領域が広くセンサデバイスの小型化を制約しかつ低コスト化の妨げであった。 Although the purpose of sufficiently small crosstalk between the output signal generated by reading through the matrix wiring described above feeble output of the photoelectric conversion element may be achieved, with the line shielding wire and the common signal line part area occupied was hindered by constraints in size widely sensor device and cost reduction. 特に、光電変換素子の出力個別信号配線Pとマトリックスの共通信号配線CLとの交差部において形成される容量を低減する目的での共通信号配線の下部層の半導体層14はフォトレジストの目合せのために導体幅(第2層目の導体層15)より広い幅を必要とするが、同配線レベルのために線間シールド配線下に存在する半導体層14の幅が小型化,低コスト化の妨げとなる。 In particular, the semiconductor layer 14 of the lower layer of the common signal lines in order to reduce the capacitance formed at the intersection of the common signal lines CL of the output individual signal lines P and the matrix of the photoelectric conversion element eyes combined photoresist conductor width in order requires a (second layer conductor layer 15) than the width, the width of the semiconductor layer 14 which is present under the interline shield wire for the wiring levels miniaturization, cost reduction hinder.

【0008】したがって、本発明の目的は共通信号配線部での各出力信号間でのクロストークの小さいマトリックス信号配線部を具備した薄膜イメージセンサを小型化、低コストで実現することにある。 It is therefore an object of the present invention is miniaturized thin image sensor provided with the small matrix signal wiring section crosstalk between the output signals of a common signal line part is to realize at low cost.

【0009】 [0009]

【課題を解決するための手段】本発明の薄膜イメージセンサは、複数の光電変換素子と、前記各光電変換素子から出力される個別信号配線と、前記個別信号配線を接続する共通信号配線と、前記各信号配線による交差部とから構成されるマトリックス信号配線部を有する薄膜イメージセンサにおいて、前記マトリックス信号配線部に線間シールド配線を具備し、前記線間シールド配線が前記交差部近傍を除き個別信号配線に沿いかつ、前記共通信号配線の導体層と該線間シールド配線の導体層とが層間絶縁層で隔てられ、異なるレベルの成膜層で形成されていることを特徴とする。 Thin image sensor of the present invention, in order to solve the problems] includes a plurality of photoelectric conversion elements, and the individual signal lines output from the respective photoelectric conversion elements, and the common signal wiring for connecting said individual signal lines, in the thin-film image sensor having a matrix signal wiring section composed of a cross-section according to the respective signal lines, comprising a line between the shield wires to the matrix signal wiring section, the line between the shields wires individually except near the intersection and along the signal line, and the common conductor layer of the signal wiring and 該線 between the shielding wiring conductor layer is separated by an interlayer insulating layer, characterized in that it is formed at different levels of the film layer.

【0010】すなわち、線間シールド配線と共通信号配線とを異なるレベルの成膜層で形成することで各信号配線間隔が狭まり、センサデバイスの幅と面積も小さくなる。 [0010] That is, narrowing the respective signal wiring space by forming a with the line shielding wire and the common signal line at different levels of the deposited layer, also reduced the width and area of ​​the sensor device.

【0011】 [0011]

【実施例】次に本発明について図面を参照して説明する。 EXAMPLES The present invention will be described below with reference to the drawings.

【0012】図1(A)は本発明の一実施例の等価回路図であり、図1(B)はそのセンサデバイスの断面図である。 [0012] FIG. 1 (A) is an equivalent circuit diagram of an embodiment of the present invention, FIG. 1 (B) is a sectional view of the sensor device.

【0013】図1(A)において、図2(A)に示す光電変換素子1,TFTスイッチ素子2,蓄積コンデンサC R ,読み出しコンデンサC Sを含むブロック5に駆動IC(集積回路)4から1〜NのN本の駆動配線GLが入力され、このGL1の駆動によりM個の光電変換素子からの出力信号がP 11からP 1Mの個別信号配線から出力され、1〜MのM本の共通信号配線CLを経て、信号検出IC(集積回路)3に入力される。 [0013] In FIG. 1 (A), FIG. 2 photoelectric conversion element 1 shown in (A), TFT switching element 2, the storage capacitor C R, the driving IC to block 5 including the read capacitor C S (integrated circuit) 4 1 N number of driving lines GL of ~N is input, the output signal from the M photoelectric conversion elements are output from the individual signal lines P 1M from P 11 by the driving of the GL1, common M number of 1~M over the signal line CL, it is the input signal detection IC (the integrated circuit) 3. 同様に、GL Nの駆動では、M個の光電変換素子からの出力信号がP NからP NMの個別信号配線から出力されて、同様にM本の共通信号配線CLを経て信号検出IC3に入力される。 Similarly, in the driving of GL N, the output signal from the M photoelectric conversion elements is output from the individual signal lines P NM from P N, likewise through the common signal line CL of the M input to the signal detection IC3 It is.

【0014】ここでA4読み取りのファクシミリ用途の薄膜イメージセンサを例にとれば、光電変換素子数は1 [0014] Taking wherein the thin image sensor A4 read facsimile application example, the photoelectric conversion element number 1
728素子配置であり、M=32,N=54でのマトリックス構成例がある。 728 is an element arrangement, there is a matrix configuration example in M ​​= 32, N = 54. 個別信号配線のピッチは光電変換素子密度である125μmであるが、32本の共通信号配線CLはセンサデバイス幅との関連においてはピッチが狭いほど有利であるが、概ね220mm長の平行配線であるため狭くするほど相互クロストークが問題となってくる。 The pitch of the individual signal lines are 125μm is a photoelectric conversion element density, 32 is a common signal line CL in the context of the sensor device width is advantageous as the pitch is narrow, generally is parallel wires 220mm length mutual cross-talk becomes a problem enough to narrow for.

【0015】クロストークを低減を図るために、個別信号配線と共通信号配線の交差部近傍を除き、個別信号配線に沿う(M+1)個所の個別線間シールド配線S(S [0015] In order to reduce crosstalk, except for the vicinity of an intersection of the common signal line and individual signal lines, along individual signal lines (M + 1) points of the individual line between the shielding wiring S (S
1 〜S M+1 )とこれらを結ぶ(M×N)個所の共通線間シールド配線SC(SC 1 〜SC NM )を配置し、0Vの電位とする。 1 ~S M + 1) and arranged connecting these (M × N) points of the common line between the shielding wire SC (SC 1 ~SC NM), a potential of 0V. 線間シールド配線を配置することにより信号配線間とで生じる容量はブロック5の内の容量素子により調整を図っている。 Capacitance generated between the between the signal lines by arranging the line between the shielding wiring is working to adjust the capacitance element of the block 5.

【0016】図1(B)は、本発明の一実施例におけるセンサデバイスの断面を示し、光電変換素子1と電源配線+V、及びこのサイド領域に配置された共通信号配線と個別線間シールド配線との一部を示す成膜構造の部分断面図である。 [0016] FIG. 1 (B) shows the sensor device of the cross section of an embodiment of the present invention, the photoelectric conversion element 1 and the power supply line + V, and the common signal wiring and the individual lines between shield wires arranged in this side region it is a partial cross-sectional view of the deposition structure of a portion of the.

【0017】ガラス基板11上に第1層目の導電層12 The conductive layer 12 of the first layer on the glass substrate 11
が形成され層間絶縁層13を介して半導電性半導体層1 Semiconductive semiconductor layer 1 through the interlayer insulating layer 13 but are formed
4、第2層目の導電層15が形成され、全体を保護層1 4, the second conductive layer 15 is formed, the protective layer 1 across
6で被覆している。 It is covered with 6.

【0018】個別線間シールド配線S及び共通線間シールド配線SCは第1層目の導体層12で形成し、共通信号配線CLとは層間絶縁層13で隔てて第2層目の導体層15で形成している。 [0018] Individual line between the shield lines S and the common line between the shield interconnect SC formed in the conductor layer 12 of the first layer, the common signal line CL and the second-layer conductive layer separated by the interlayer insulating layer 13 is 15 in form.

【0019】なお、図1(B)では、線間シールド配線を第1層目の導体層で形成した例で示したが、第2層目の導体層の上にさらに第3層目の導体層を形成して、第2層目の導体層で形成される共通信号配線と間を第2層間絶縁層で隔てて形成してもよい。 [0019] In FIG. 1 (B), the showed the line shield wiring example of forming the first-layer conductive layer, further third layer conductor on the second-layer conductive layer forming a layer may be between the common signal wiring formed in the second layer conductive layer is formed at the second interlayer insulation layer.

【0020】 [0020]

【発明の効果】以上説明したように本発明は、潜函シールド配線と共通信号配線とを異なるレベルの成膜層で形成したので、各信号配線間隔が狭まり、これによりセンサデバイスの幅と面積を小さくすることができる。 The present invention described above, according to the present invention, since the formation of the common signal line and the caisson shield lines at different levels of the deposited layer, narrowed the signal wiring interval, thereby the width and area of ​​the sensor device it can be reduced.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例を示す図であり、(A)は等価回路図、(B)はセンサデバイスの断面図である。 Figure 1 is a view showing an embodiment of the present invention, (A) is an equivalent circuit diagram, (B) is a sectional view of the sensor device.

【図2】従来技術を示す図であり、(A)は等価回路図、(B)はセンサデバイスの断面図である。 [Figure 2] is a diagram showing a prior art, (A) is an equivalent circuit diagram, (B) is a sectional view of the sensor device.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 光電変換素子 2 TFTスイッチ素子 3 信号検出IC 4 駆動IC 11 ガラス基板 12 第1層目の導電層 13 層間絶縁層 14 半導電性半導体層 15 第2層目の導電層 16 保護膜 CL 共通信号配線 GL 駆動ゲート配線 P 出力個別信号配線 S 線間シールド配線 1 photoelectric conversion element 2 TFT switching element 3 signal detection IC 4 drive IC 11 glass substrate 12 first conductive layer 13 interlayer insulating layer 14 semiconductive semiconductor layer 15 second conductive layer 16 protective layer CL common signal line GL driving gate lines P output individual signal lines S line between the shielding wire

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl. 5識別記号 庁内整理番号 FI 技術表示箇所 H04N 5/335 E ────────────────────────────────────────────────── ─── front page continued (51) Int.Cl. 5 identification symbol Agency in Docket No. FI art display portion H04N 5/335 E

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 複数の光電変換素子と、前記各光電変換素子から出力される個別信号配線と、前記個別信号配線を接続する共通信号配線と、前記各信号配線による交差部とから構成されるマトリックス信号配線部を有する薄膜イメージセンサにおいて、前記マトリックス信号配線部に線間シールド配線を具備し、前記線間シールド配線が前記交差部近傍を除き個別信号配線に沿いかつ、前記共通信号配線の導体層と前記線間シールド配線の導体層とが層間絶縁層で隔てられ、たがいに異なるレベルの成膜層で形成されていることを特徴とする薄膜イメージセンサ。 1. A plurality of photoelectric conversion elements, the composed and individual signal lines output from each photoelectric conversion element, and the common signal wiring for connecting said individual signal lines, and the intersecting portion by the respective signal lines in the thin-film image sensor having a matrix signal wiring section, provided with a line-to-line shielding wire to the matrix signal wiring section, the line between the shields wires along individual signal lines except for the vicinity of the intersection and the conductor of the common signal line thin image sensor, wherein a conductor layer of the line between the shielding wiring and the layers separated by an interlayer insulating layer are formed at different levels of the film layer.
JP19934692A 1992-07-27 1992-07-27 Thin film image sensor Withdrawn JPH0645578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19934692A JPH0645578A (en) 1992-07-27 1992-07-27 Thin film image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19934692A JPH0645578A (en) 1992-07-27 1992-07-27 Thin film image sensor

Publications (1)

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JPH0645578A true true JPH0645578A (en) 1994-02-18

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503086A (en) * 2004-06-18 2008-01-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ X-ray image detector
CN104125417A (en) * 2013-04-25 2014-10-29 佳能株式会社 Photoelectric conversion apparatus and imaging system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008503086A (en) * 2004-06-18 2008-01-31 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ X-ray image detector
CN104125417A (en) * 2013-04-25 2014-10-29 佳能株式会社 Photoelectric conversion apparatus and imaging system
CN104125417B (en) * 2013-04-25 2017-09-15 佳能株式会社 Photoelectric conversion apparatus and an imaging system

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