JPH06326215A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To provide a manufacturing method of a high reliability and high bonding strength semiconductor device that eliminates at least a part of a bonding agent layer between conductor patterns. CONSTITUTION:A manufacturing method of a semiconductor device includes a process which forms a bonding agent layer 22 on a base film 21, a process which forms a conductor pattern 23 on the bonding agent layer 22 and a process which eliminates at least a part of the bonding agent layer 22 between the conductor patterns 23 and performs these processes, thereby eliminating the movement of a conductor metal in which the ions of the conductor patterns move by means of impurity ions contained in the bonding agent layer and moisture and voltage.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device.

[0002]

2. Description of the Related Art Conventionally, as a technique in such a field,
There was something like the following. 3 is a plan view of a TCP (tape carrier package) using a conventional three-layer tape, and FIG. 4 is a sectional view taken along the line AA of FIG. In these figures, the sprocket hole 5 for transportation, the device hole 6 for mounting the IC chip 4 and the like are processed in the base film 1, and after the conductor foil is attached through the adhesive layer 2,
The conductor pattern 3 is formed by etching or the like so that the IC chip 4 is mounted.

FIG. 5 shows a TCP (tape carrier package) using a two-layer tape that does not use an adhesive.
FIG. In FIG. 5, a thin Cu film 12 is formed on a base film 11, and a conductor pattern 14 is formed on the thin Cu film 12.
Are stacked. FIG. 6 is a sectional view showing an example of a TCP manufacturing method using the two-layer tape.

First, as shown in FIG. 6 (a), a thin Cu film 12 is formed on a base film 11, and then a resist is applied to form a resist pattern 13 as shown in FIG. 6 (b). To form. Next, as shown in FIG.
The conductor pattern 14 is laminated on the thin Cu film 12 on the base film 11.

Finally, as shown in FIG. 6D, the resist pattern 13 is removed to form a conductor pattern 14 on the base film 11.

[0006]

However, in the three-layer tape structure shown in the above-mentioned conventional example, in order to operate the IC chip, the conductors (one is the + pole and the other is the − pole) are energized, The conductive metal moves inside the adhesive layer by ion exchange between the impurity ions inside the adhesive layer and the conductive metal. In other words, a phenomenon called dendrite, migration, etc. (ions of the conductor pattern move due to the impurity ions contained in the adhesive layer, water and voltage) occurs, and the insulation resistance deteriorates, causing a malfunction. was there.

Also, in the case of the two-layer tape structure as shown in FIGS. 5 and 6, since no adhesive layer is used, the insulation resistance is not deteriorated, but the adhesive strength is low and the structural base film is etched. Since it has to be formed by the above method, there is a problem that an etchable material has to be selected. In order to solve the above-mentioned problems, the present invention provides a method for manufacturing a semiconductor device having high reliability and high adhesive strength, which is capable of removing at least a part of an adhesive layer between conductor patterns and preventing a dendrite phenomenon. The purpose is to provide.

[0008]

In order to achieve the above object, the present invention provides a method of manufacturing a semiconductor device, which comprises a step of forming an adhesive layer on a substrate and a conductor pattern formed on the adhesive layer. And a step of removing at least a part of the adhesive layer between the conductor patterns.

As the substrate, a base film, a flexible printed circuit board or a printed wiring board can be used.

[0010]

According to the present invention, in a method of manufacturing a semiconductor device, a step of forming an adhesive layer on a substrate, a step of forming a conductor pattern on the adhesive layer, and an adhesive layer between the conductor patterns. Is removed. Therefore, due to the impurity ions contained in the adhesive layer, the moisture, and the voltage, the conductive metal to which the ions of the conductor pattern move does not move, and a highly reliable semiconductor device can be obtained.

[0011]

Embodiments of the present invention will be described in detail below with reference to the drawings. 1A to 1D are sectional views of a semiconductor device in a manufacturing process showing a first embodiment of the present invention. Here, TCP having a three-layer structure will be described. First, as shown in FIG. 1A, a tape having a three-layer structure including an adhesive layer 22 formed on a base film (base substrate) 21 and a conductor pattern 23 formed on the adhesive layer 22 as in the prior art. To create. Here, the adhesive layer bonds the base film and the conductor pattern, and is generally made of an epoxy material.

Next, as shown in FIG. 1B, the adhesive layer 22 between the conductor patterns 23 is etched. At this time, since the patterning has already been performed, the conductor pattern (C
Etching can be performed with an organic solvent using (u, Ag, Fe, Ni, etc.) 23 as a mask. Then, as shown in FIG. 1C, the adhesive layer 22 between the conductor patterns 23 is removed, and the conductor patterns 23 in which the grooves 24 are formed are formed.
Can be obtained.

After that, the IC chip is mounted in the same manner as in the conventional case, and the process is completed. FIG. 2 is a sectional view of a semiconductor device showing a modification of the first embodiment described above. In this example, the adhesive layer 22 is formed on the base film 21, and a tape having a three-layer structure composed of the conductor pattern 23 is formed on the adhesive layer 22, which is the same as the above-described embodiment, but the conductor pattern 23 is formed. With the mask as a mask, the adhesive layer 22 between the conductor patterns 23 is not selectively removed, but the adhesive layer 22 between the conductor patterns 23 is removed and grooves 25 are formed to electrically connect the conductor patterns 23. Insulate.

With this structure, the conductor patterns 23 are securely fixed by the adhesive layer 22, and the conductor patterns 23 can be electrically completely insulated from each other. FIG. 7 is a sectional view of a semiconductor device manufacturing process showing the second embodiment of the present invention. Here, the flexible printed circuit board will be described.

First, as shown in FIG. 7A, an adhesive layer 32 is formed on a flexible printed board 31, and a flexible printed wiring having a three-layer structure composed of a conductor pattern 33 is formed on the adhesive layer 32. Next, as shown in FIG. 7B, the adhesive layer 32 between the conductor patterns 33 is etched. At this time, since patterning has already been performed,
It is possible to perform etching with an organic solvent using the conductor pattern (Cu, Ag, Fe, Ni, etc.) 33 as a mask.

Then, as shown in FIG. 7C, the adhesive layer 32 between the conductor patterns 33 is removed, and the conductor pattern 33 in which the grooves 34 are formed can be obtained. Also in this embodiment, as in FIG. 2, the conductor pattern 33 is formed.
A part (not shown) of the adhesive layer 32 in between can be removed to electrically insulate between the conductor patterns 33.

FIG. 8 is a sectional view of a semiconductor device manufacturing process showing the third embodiment of the present invention. Here, a printed wiring board (glass epoxy board) will be described. First, as shown in FIG. 8A, an adhesive layer 42 is formed on a printed wiring board (for example, glass epoxy board) 41,
A printed wiring having a three-layer structure composed of the conductor pattern 43 is formed thereon.

Next, as shown in FIG. 8B, the adhesive layer 42 between the conductor patterns 43 is etched. At this time, since patterning has already been performed, it is possible to perform etching with an organic solvent using the conductor pattern (Cu, Ag, Fe, Ni, etc.) 43 as a mask. Then, as shown in FIG. 8C, the adhesive layer 42 between the conductor patterns 43 is removed, and the conductor pattern 43 in which the groove 44 is formed can be obtained.

Also in this embodiment, as in FIG. 2, a part (not shown) of the adhesive layer 42 between the conductor patterns 43 can be removed to electrically insulate the conductor patterns 43. The present invention is not limited to the above-mentioned embodiments, and various modifications can be made based on the spirit of the present invention, and these modifications are not excluded from the scope of the present invention.

[0020]

As described above in detail, according to the present invention, in the method of manufacturing a semiconductor device, the step of forming an adhesive layer on a substrate and the step of forming a conductor pattern on the adhesive layer. Since the step and the step of removing at least a part of the adhesive layer between the conductor patterns are performed, the ions of the conductor pattern move due to the impurity ions, moisture and voltage contained in the adhesive layer. The movement of the conductive metal is eliminated, and a semiconductor device having high reliability can be obtained. In particular, it is effective in a TCP (tape carrier package) having a conductor pattern on a base film which is wired at a fine pitch via an adhesive layer.

Further, it is suitable to be applied to a flexible printed circuit board having flexibility in which peeling of the conductor pattern is likely to be a problem. Furthermore, by applying the same to a printed circuit board on which a lot of wiring is provided, a remarkable effect can be obtained with a simple configuration. In addition, the adhesive strength does not decrease unlike the tape having a two-layer structure, and the degree of freedom in material selection can be increased.

[Brief description of drawings]

FIG. 1 is a cross-sectional view of a manufacturing process of a semiconductor device showing a first embodiment of the present invention.

FIG. 2 is a manufacturing step sectional view of a semiconductor device showing a modification of the first embodiment of the present invention.

FIG. 3 is a plan view of a TCP (tape carrier package) using a conventional three-layer tape.

4 is a cross-sectional view taken along the line AA of FIG.

FIG. 5 is a sectional view of a TCP (tape carrier package) using a conventional two-layer tape that does not use an adhesive.

FIG. 6 is a cross-sectional view showing an example of a method for manufacturing a TCP (tape carrier package) using a conventional two-layer tape that does not use an adhesive.

FIG. 7 is a sectional view of a semiconductor device manufacturing process showing the second embodiment of the present invention.

FIG. 8 is a sectional view of a semiconductor device manufacturing process showing the third embodiment of the present invention.

[Explanation of symbols]

 21 Base Film 22, 32, 42 Adhesive Layer 23, 33, 43 Conductor Pattern 24, 25, 34, 44 Groove 31 Flexible Printed Board 41 Printed Wiring Board

Claims (4)

[Claims] 1. A process of forming an adhesive layer on a substrate; (b) a process of forming a conductor pattern on the adhesive layer; and (c) at least an adhesive layer between the conductor patterns. A method of manufacturing a semiconductor device, which comprises performing a step of removing a part. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is a base film. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is a flexible printed circuit board. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate is a printed wiring board.