JPH06275715A - Semiconductor wafer and manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To control a thickness of a package constant with high mass production when a semiconductor device to be resin-sealed except a rear surface side of a semiconductor chip is manufactured. CONSTITUTION:The method for, manufacturing a semiconductor wafer and a semiconductor device comprises the steps of forming semiconductor integrated circuits on a plurality of chip areas 10a of a semiconductor wafer body 10, forming a tape adhered with two layers of a first tape 11 for preventing exposure of a rear surface of the wafer and a second tape 12 for dicing the wafer, and adhering the first tape surface of the two layer tapes to an entire rear surface of the wafer body. Further, the method comprises the steps of dicing the body adhered with the two-layer tape together with the first tape, and packaging to seal the chip with the first tape with resin 13 except its rear surface side.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor wafer and a semiconductor device, and more particularly to a semiconductor wafer before dicing after the wafer process is completed and a semiconductor chip separated from the semiconductor wafer and packaged. How to do it.

[0002]

2. Description of the Related Art Recent LSIs (Large Scale Integrated Circuits) are called TAB (Tape Automated Bonding) because of their thinness and compatibility with logic LSIs that require a large number of narrow-pitch signal terminals. The technology used is widely adopted.

2 and 3 respectively show a conventional tape carrier package (Ta) formed by using TAB technology.
It is sectional drawing which shows a different example of a semiconductor device of a pe carrier package (TCP) type.

In the semiconductor device shown in FIG. 2, an LSI chip 21 is provided with a conductor electrode (bump electrode) 22 which is highly protruded at a signal extraction portion on the chip surface.
The carrier film 23, which is a wiring member, has a lead pattern formed on the thin film having insulating heat resistance, such as polyimide, by a body or the like. The inner leads of the lead pattern and the bump electrodes 22 of the LSI chip are directly joined by thermocompression bonding.

The front surface and the side surface of the LSI chip 21 are sealed with a resin 24 together with a part of the carrier film 23, and the back surface of the chip 21 is exposed. Further, a back surface exposure preventing tape 25 is attached so as to cover the entire back surface of the chip 21 and a part of the back surface of the carrier film 23. However, the above-described conventional manufacturing process of the semiconductor device requires a process of attaching the tape 25 for each LSI chip after packaging, and thus the mass productivity is poor.

Moreover, variations in the process of attaching the tape 25 to each LSI chip tend to cause variations in the thickness of the LSI 25 including the tape 25 and variations in the package thickness.

On the other hand, the semiconductor device shown in FIG. 3 is different from the semiconductor device shown in FIG. 2 in the inner lead tip portion of the lead pattern of the carrier film 23 and the LSI chip 21.
In the state where the bump electrodes 22 are joined by thermocompression bonding,
The difference is that the entire chip 21 is sealed together with a part of the carrier film 23 with a resin 25, and the back surface of the chip 21 is not exposed.

When manufacturing such a semiconductor device, a method of performing resin encapsulation in two times, that is, resin encapsulation from the front surface side of the chip and resin encapsulation from the back surface side of the chip, and a method from the front surface side of the chip There is a method of resin-encapsulating the entire chip at once by resin-encapsulation.

However, in the former method, the time required for resin sealing becomes long, and in the latter method, it is difficult to control the amount of resin flowing from the front surface side of the chip to the back surface side of the chip and the thickness of the resin. The thickness tends to vary.

[0010]

As described above, the LSI
The conventional method for manufacturing a semiconductor device, in which the back surface of the chip is exposed, is the LS after packaging.
Since a step of attaching a tape is required for each I chip, mass productivity is poor, and there is a problem that the thickness including the tape is likely to vary from LSI chip to LSI package thickness. .

The present invention has been made to solve the above problems, and provides a semiconductor wafer capable of separating a semiconductor chip suitable for packaging by resin sealing except the back surface side of the semiconductor chip. The purpose is to

Further, according to the present invention, a semiconductor device having a packaging sealed with a resin except for the back surface side of a semiconductor chip can be manufactured with high mass productivity, and the thickness of the package can be easily controlled. An object is to provide a method for manufacturing a device.

[0013]

A semiconductor wafer according to the present invention has a plurality of chip areas, and a semiconductor wafer body having a semiconductor integrated circuit formed in each chip area, and a semiconductor wafer body attached to the entire back surface of the semiconductor wafer body. The wafer backside exposure prevention tape is provided, and the wafer dicing tape is attached to the entire backside of the wafer backside exposure prevention tape.

The method of manufacturing a semiconductor device according to the present invention is
A step of forming a semiconductor integrated circuit in each of a plurality of chip regions in a semiconductor wafer body, and a step of forming a tape in which a first tape for exposing the back surface of a wafer and a second tape for wafer dicing are adhered in two layers. And a step of attaching the first tape surface of the two-layer tape to the entire back surface of the semiconductor wafer body, and dicing the semiconductor wafer body to which the two-layer tape is attached together with the first tape, And a step of separating the semiconductor chip having the first tape into individual semiconductor chips, and a step of packaging the semiconductor chip with the first tape by resin sealing except for the back surface side thereof. Characterize.

[0015]

The semiconductor wafer of the present invention comprises a backside exposure preventing tape attached to the entire backside of the semiconductor wafer body.
The tape for dicing is attached to the entire back surface of the tape for preventing back surface exposure.

Therefore, the semiconductor wafer body can be diced together with the back surface exposure preventing tape to be separated into individual semiconductor chips each having a back surface exposure preventing tape on the back surface. A semiconductor chip suitable for packaging by sealing can be realized.

The semiconductor device manufacturing method of the present invention is
A semiconductor chip having a backside surface exposure prevention tape on the backside is separated from the semiconductor wafer body with a double-sided tape attached to the backside, and the chip is packaged by resin sealing except for the backside. .

Therefore, the step of attaching the tape to each semiconductor chip after packaging is not required, the mass productivity is improved, the thickness including the back surface exposure prevention tape for each chip is less likely to vary, and the package thickness is improved. Control becomes easier.

[0019]

Embodiments of the present invention will now be described in detail with reference to the drawings. 1A to 1C are a perspective view and a sectional view showing main steps in a method for manufacturing a semiconductor device according to an embodiment of the present invention. First, as shown in FIG. 1A, a semiconductor integrated circuit is formed in each of a plurality of chip regions 10a ... Arranged in a matrix on a semiconductor wafer body 10.

Next, on the entire back surface of the semiconductor wafer body 10, for example, a wafer backside exposure preventing tape 11 having an infrared ray blocking property and a wafer dicing tape 12 are provided.
Paste in the order of. In this case, a two-layer tape in which the back surface exposure preventing tape 11 and the dicing tape 12 are bonded by an adhesive is formed in advance, and the back surface exposure preventing tape surface of the two-layer tape is the semiconductor layer. It is desirable to attach the entire back surface of the wafer body 10 with an adhesive.

The reason why the back surface exposure preventing tape 11 having an infrared ray blocking property is attached to the back surface of the wafer is to prevent generation of electromotive force in the chip area due to the infrared rays incident on the back surface of the chip area. is there.

Next, as shown in FIG. 1 (b), the semiconductor wafer body 10 having the two layers of tape attached to the back surface is diced together with the back surface exposure preventing tape 11 to prevent the back surface from being exposed. The individual semiconductor chips 10a having the tape 11 for separation are separated from the tape 12 for dicing.

Next, as shown in FIG. 1 (c), the semiconductor chip 10a with the back surface exposure preventing tape is sealed with resin 13 except for the back surface side thereof, for example, TCP.
Type semiconductor device is packaged.

In this case, the semiconductor chip 10a is provided with bump electrodes 14 which are highly protruded at the signal extraction portion on the chip surface. Then, the bump electrodes 14 of the semiconductor chip 10a are heated to the tip of the inner lead of the lead pattern of the carrier film 15 in which the lead pattern is formed on the thin film having insulating heat resistance such as polyimide with a body. Join directly by crimping. Then, the resin 13 from the front surface side of the semiconductor chip 10a is poured, and the front surface and the side surface of the chip are sealed together with a part of the carrier film 15.

According to the manufacturing process as described above, from the semiconductor wafer body having the double-layered tape attached to the back surface,
A semiconductor chip having a back surface exposure prevention tape on the back surface is separated, and packaging is performed on this chip by resin sealing except for the back surface side. Therefore, a step of attaching a tape to each semiconductor chip after packaging is not required, mass productivity is improved, variation in thickness including backside exposure prevention tape between chips is less likely to occur, and package thickness control is performed. Will be easier.

Further, a tape in which a back surface exposure preventing tape and a dicing tape are adhered in two layers is formed in advance, and the back surface exposure preventing tape surface of the two-layer tape is formed on the entire back surface of the semiconductor wafer body. Since it is attached to a semiconductor device, a semiconductor device can be manufactured using an existing semiconductor manufacturing device.

That is, according to the method of manufacturing a semiconductor device of the above-described embodiment, a semiconductor device having a packaging sealed with a resin except for the back surface side of the semiconductor chip can be manufactured with high mass productivity, and the package Control of thickness becomes easy.

Further, according to the semiconductor wafer as shown in the above-mentioned embodiment, the semiconductor wafer main body in which the semiconductor integrated circuits are formed in the plurality of chip regions, and the back surface attached to the entire back surface of the semiconductor wafer main body. An exposure prevention tape and a dicing tape attached to the entire back surface of the back surface exposure prevention tape are provided.

Therefore, it becomes possible to dice the main body of the semiconductor wafer together with the tape for preventing the backside exposure, and separate it into individual semiconductor chips having the backside exposure preventing tape on the backside. A semiconductor chip suitable for packaging by sealing can be realized.

[0030]

As described above, according to the present invention, it is possible to realize a semiconductor wafer capable of separating semiconductor chips suitable for packaging by resin sealing except the back surface side of the semiconductor chip.

Further, according to the present invention, a semiconductor device having a packaging sealed with a resin except for the back surface side of the semiconductor chip can be manufactured with high mass productivity, and the control of the thickness of the package is easy. It is possible to realize a method for manufacturing a semiconductor device that includes

[Brief description of drawings]

FIG. 1 is a perspective view and a cross-sectional view showing main steps in a method for manufacturing a semiconductor device according to an embodiment of the present invention.

FIG. 2 is a sectional view showing an example of a conventional TCP type semiconductor device.

FIG. 3 is a sectional view showing another example of a conventional TCP type semiconductor device.

[Explanation of symbols]

10 ... Semiconductor wafer main body, 10a ... Chip area, 11 ...
Backside exposure prevention tape, 12 ... Dicing tape, 13 ... Resin, 14 ... Bump electrode, 15 ... Carrier film.

Claims (4)

[Claims] 1. A semiconductor wafer body having a plurality of chip areas, each of which has a semiconductor integrated circuit formed thereon, and a wafer backside exposure preventing tape attached to the entire back surface of the semiconductor wafer body. A wafer for dicing, which is attached to the entire back surface of the tape for preventing exposure of the back surface of the wafer, and a semiconductor wafer. 2. The semiconductor wafer according to claim 1, wherein the wafer backside exposure preventing tape has an infrared ray blocking property. 3. A step of forming a semiconductor integrated circuit in each of a plurality of chip regions of a semiconductor wafer main body, and a first tape for wafer backside exposure prevention and a second tape for wafer dicing are bonded in two layers. A step of forming a tape, a step of attaching the first tape surface of the two-layer tape to the entire back surface of the semiconductor wafer body, and a step of attaching the semiconductor wafer body to which the two-layer tape is attached to the first tape And a step of dicing the semiconductor chip into individual semiconductor chips having a first tape on the back surface, and a step of packaging the semiconductor chip with the first tape by resin sealing except for the back surface side. A method of manufacturing a semiconductor device, comprising: 4. The method of manufacturing a semiconductor device according to claim 3, wherein the first tape has an infrared ray blocking property.