JPH06260670A - Light confining structure for solar cell - Google Patents

Light confining structure for solar cell

Info

Publication number
JPH06260670A
JPH06260670A JP5044878A JP4487893A JPH06260670A JP H06260670 A JPH06260670 A JP H06260670A JP 5044878 A JP5044878 A JP 5044878A JP 4487893 A JP4487893 A JP 4487893A JP H06260670 A JPH06260670 A JP H06260670A
Authority
JP
Japan
Prior art keywords
substrate
light
slope
width
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5044878A
Other languages
Japanese (ja)
Other versions
JPH088370B2 (en
Inventor
Mitsunori Ketsusako
Hiroyuki Otsuka
Tsuyoshi Uematsu
強志 上松
寛之 大塚
光紀 蕨迫
Original Assignee
Hitachi Ltd
株式会社日立製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, 株式会社日立製作所 filed Critical Hitachi Ltd
Priority to JP5044878A priority Critical patent/JPH088370B2/en
Publication of JPH06260670A publication Critical patent/JPH06260670A/en
Publication of JPH088370B2 publication Critical patent/JPH088370B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

PURPOSE:To efficiently confine incident light within a substrate by combining at least two types of inverted pyramid layers, large and small, formed on the surface of the substrate. CONSTITUTION:Light projected to a slope 1 is reflected by the back face of a substrate, and the reflected light 7 is projected to a slope 2; therefore, light is confined within the substrate 8. To do this efficiently, there must be a specific relation among substrate thickness 4, inverted pyramid width 5 and inverted pyramid open angle 10. The ratio of large pyramid width 5 to small pyramid width must be 1:6. Thus, when light projected to the slope 1 at the third cycle along the straight line connecting A and A', is in turn projected to the slope 2, it is efficiently confined. Forming a solar cell light confining structure in a way that the refractive index of its substrate 8 is 3.6, inverted pyramid open angle is as expressed in Equation I, and Equation II is satisfied (where W is substrate width 4 and d is large inverted pyramid width 5), efficiently confines incident light within the substrate.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light confining structure for a solar cell, and more particularly to a light confining structure for a solar cell capable of confining incident light in a substrate significantly efficiently.

[0002]

2. Description of the Related Art In order to improve the photoelectric conversion efficiency of a solar cell, it is necessary to efficiently confine the light incident on the solar cell in the solar cell. For this purpose, it is necessary to first suppress the surface reflection and allow more light to enter the substrate, but in order to achieve this, a method of forming an inverted pyramid structure on the solar cell surface has been considered. There is. As such a structure, up to now, as shown in FIG. 2, an antireflection structure having a structure in which inverted pyramids of the same size made of a downwardly convex quadrangular pyramid are arranged is used. Examples of the disclosure of such a structure include Applied Physics Letters Vol. 55, No. 13, pp. 1363 to 1365 (1989) (Appl. Phys.
ett., Vol.55, No.13, 1989, pp.1363-1365).

[0003]

However, in the structure of the prior art described above, when the light incident on one slope of the inverted pyramid is reflected on the back surface of the substrate and reaches the front surface again, most of the light is emitted to the outside. Therefore, the light could not be efficiently confined in the substrate. The object of the present invention is to solve the problems that the above-described conventional art had,
An object of the present invention is to provide a light confinement structure for a solar cell capable of confining incident light in a substrate significantly efficiently.

[0004]

The above object is to provide an optical confinement structure for a solar cell, which is characterized by comprising a combination of at least two kinds of reverse pyramid layers provided on the surface of a substrate. The main part of the light that is incident on one slope of the pyramid, is reflected by the back surface of the substrate, and reaches the front surface of the substrate again, is the two surfaces of two adjacent pairs of large inverted pyramids that are in contact with each other, and are perpendicular to the incident light incident slope. This can be achieved by providing an optical confinement structure for a solar cell, which is configured to be incident on an inclined surface that is inclined in the direction.

[0005]

As shown in FIG. 2, the conventional optical confinement structure has a surface structure in which inverted pyramids of the same size, which are downwardly convex quadrangular pyramids, are arranged. When the light 3 enters the slope 1, it is reflected by the back surface of the substrate 8 and enters the slope 2. In this case, the angle at which the reflected light 7 is incident on the slope 2 is the same as the angle at which the incident light is incident on the slope 1 into the substrate, so this light is emitted to the outside of the substrate.

On the other hand, in the case of the light confinement structure of the present invention shown in FIG. 1, the light incident on the slope 1 travels along the line AA 'and is emitted to the slope 2. Since the slope 2 is inclined in the Y direction unlike the slope 1, the light 7 reflected on the back surface of the substrate enters the slope 2 at a large incident angle. When the light is incident on the boundary surface shallowly in this way, the reflectance of the light increases, so that most of the reflected light 7 is reflected by the slope 2 and travels inside the substrate again. Further, when light is incident from a substance having a large refractive index toward a substance having a small refractive index such as air, or when the incident angle is large, that is, when the light is incident shallowly, the light is totally reflected, so that the inclined surface 2 All incident light is confined within the substrate. As a result, most of the light 3 incident on the substrate 8 can be efficiently confined in the substrate 8.

These effects can also be obtained by combining a large inverse pyramid with a slightly smaller inverse pyramid as shown in FIG. 3 or a combination of a large inverse pyramid with an inverse pyramid half its size as shown in FIG. Obtainable.

[0008]

EXAMPLES The optical confinement structure for a solar cell of the present invention will be specifically described below with reference to examples. The configuration of one embodiment of the present invention will be described with reference to FIG. As described above, the light incident on the slope 1 is reflected by the back surface of the substrate, and the reflected light 7 enters the slope 2, so that the light is confined in the substrate 8. In order to do this efficiently, the substrate thickness 4, the inverse pyramid width 5 and the inverse pyramid opening angle 10 must have a specific relationship. In the case of this embodiment, the ratio of the width 5 of the large inverted pyramid to the width of the small inverted pyramid is set to 1: 6. For this reason, when the light that has entered the slope 1 at three cycles along the line AA 're-enters the slope 2, the light can be efficiently confined. For this,
The refractive index of the substrate 8 is 3.6, the substrate thickness 4 is w, and the opening angle of the inverted pyramid is

[0009]

[Equation 1]

When the width 5 of the large inverted pyramid is d,

[0011]

[Equation 2]

It is necessary to satisfy the relationship of In this embodiment, the substrate thickness 4 is 180 μm, and the width 5 of the inverted pyramid larger than the above equation is 101 μm. Further, when the repetition period is increased, the relationship between the substrate thickness 4 and the inverse pyramid width 5 can be obtained by increasing the value of n in the above equation.

[0013]

As described above, by using the optical confinement structure for a solar cell as the structure of the present invention, the problems of the prior art can be solved and incident light can be introduced into the substrate. It has been possible to provide a light confinement structure for a solar cell that can be confined significantly efficiently.

[Brief description of drawings]

FIG. 1 is a conceptual diagram illustrating the structure of an example of a solar cell light confinement structure of the present invention.

FIG. 2 is a conceptual diagram illustrating the structure of a conventional light confinement structure.

FIG. 3 is a conceptual diagram illustrating the structure of another example of the optical confinement structure of the present invention.

FIG. 4 is a conceptual diagram illustrating a structure of still another example of the optical confinement structure of the present invention.

FIG. 5 is a diagram for explaining the structure of an embodiment of the optical confinement structure of the present invention.

[Explanation of symbols]

1 ... Slope, 2 ... Slope, 3 ... Incident light, 4 ... Substrate thickness, 5 ...
Inverse pyramid width, 6 ... Inverse pyramid width, 7 ... Reflected light, 8 ... Substrate, 9 ... Incident angle, 10 ... Opening angle.

Claims (2)

[Claims]
1. A light confinement structure for a solar cell, comprising a combination of at least two kinds of large and small inverted pyramid layers provided on the surface of a substrate.
2. A main part of light which is incident on one slope of a large inverted pyramid, is reflected by the back surface of the substrate, and reaches the front surface of the substrate again, is the two surfaces of two adjacent pairs of large inverted pyramids which are in contact with each other. The light confinement structure for a solar cell according to claim 1, wherein the incident light is incident on a slope inclined at a right angle to the incident slope.
JP5044878A 1993-03-05 1993-03-05 Light confinement structure for solar cells Expired - Fee Related JPH088370B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5044878A JPH088370B2 (en) 1993-03-05 1993-03-05 Light confinement structure for solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5044878A JPH088370B2 (en) 1993-03-05 1993-03-05 Light confinement structure for solar cells

Publications (2)

Publication Number Publication Date
JPH06260670A true JPH06260670A (en) 1994-09-16
JPH088370B2 JPH088370B2 (en) 1996-01-29

Family

ID=12703753

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5044878A Expired - Fee Related JPH088370B2 (en) 1993-03-05 1993-03-05 Light confinement structure for solar cells

Country Status (1)

Country Link
JP (1) JPH088370B2 (en)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0984493A2 (en) * 1998-08-31 2000-03-08 Sharp Kabushiki Kaisha Solar battery cell and method for manufacturing the same
US20100294356A1 (en) * 2009-04-24 2010-11-25 Solexel, Inc. Integrated 3-dimensional and planar metallization structure for thin film solar cells
JP2011503861A (en) * 2007-11-05 2011-01-27 フォトン ベスローテン フェノーツハップPhoton B.V. Photovoltaic device
US8294026B2 (en) * 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US20130167915A1 (en) * 2009-12-09 2013-07-04 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US8926803B2 (en) 2009-01-15 2015-01-06 Solexel, Inc. Porous silicon electro-etching system and method
US8946547B2 (en) 2010-08-05 2015-02-03 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
US8999058B2 (en) 2009-05-05 2015-04-07 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
JP5900867B1 (en) * 2015-08-24 2016-04-06 株式会社高揚 Solar panel and its surface structure
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US9349887B2 (en) 2006-10-09 2016-05-24 Solexel, Inc. Three-dimensional thin-film solar cells
US9397250B2 (en) 2006-10-09 2016-07-19 Solexel, Inc. Releasing apparatus for separating a semiconductor substrate from a semiconductor template
US9401276B2 (en) 2010-02-12 2016-07-26 Solexel, Inc. Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US9748414B2 (en) 2011-05-20 2017-08-29 Arthur R. Zingher Self-activated front surface bias for a solar cell
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118679A (en) * 1981-01-14 1982-07-23 Hoxan Corp Solar cell and manufacture thereof
JPS6445176A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Manufacture of solar cell element
JPH0276269A (en) * 1988-09-12 1990-03-15 Hitachi Ltd Photoelectric conversion element and photoelectric converter
JPH03173481A (en) * 1989-12-01 1991-07-26 Mitsubishi Electric Corp Solar battery and its manufacture
JPH04212473A (en) * 1990-10-22 1992-08-04 Sanyo Electric Co Ltd Polycrystal semiconductor film and photovoltaic device using the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57118679A (en) * 1981-01-14 1982-07-23 Hoxan Corp Solar cell and manufacture thereof
JPS6445176A (en) * 1987-08-14 1989-02-17 Hitachi Ltd Manufacture of solar cell element
JPH0276269A (en) * 1988-09-12 1990-03-15 Hitachi Ltd Photoelectric conversion element and photoelectric converter
JPH03173481A (en) * 1989-12-01 1991-07-26 Mitsubishi Electric Corp Solar battery and its manufacture
JPH04212473A (en) * 1990-10-22 1992-08-04 Sanyo Electric Co Ltd Polycrystal semiconductor film and photovoltaic device using the same

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0984493A3 (en) * 1998-08-31 2000-06-28 Sharp Kabushiki Kaisha Solar battery cell and method for manufacturing the same
US6313397B1 (en) 1998-08-31 2001-11-06 Sharp Kabushiki Kaisha Solar battery cell
EP0984493A2 (en) * 1998-08-31 2000-03-08 Sharp Kabushiki Kaisha Solar battery cell and method for manufacturing the same
US9349887B2 (en) 2006-10-09 2016-05-24 Solexel, Inc. Three-dimensional thin-film solar cells
US9397250B2 (en) 2006-10-09 2016-07-19 Solexel, Inc. Releasing apparatus for separating a semiconductor substrate from a semiconductor template
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
JP2011503861A (en) * 2007-11-05 2011-01-27 フォトン ベスローテン フェノーツハップPhoton B.V. Photovoltaic device
US8294026B2 (en) * 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US20130284255A1 (en) * 2008-11-13 2013-10-31 Solexel, Inc. High-Efficiency Thin-Film Solar Cells
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US8926803B2 (en) 2009-01-15 2015-01-06 Solexel, Inc. Porous silicon electro-etching system and method
US20100294356A1 (en) * 2009-04-24 2010-11-25 Solexel, Inc. Integrated 3-dimensional and planar metallization structure for thin film solar cells
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
US8999058B2 (en) 2009-05-05 2015-04-07 Solexel, Inc. High-productivity porous semiconductor manufacturing equipment
US8962380B2 (en) 2009-12-09 2015-02-24 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using thin planar semiconductor absorbers
US20130167915A1 (en) * 2009-12-09 2013-07-04 Solexel, Inc. High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using three-dimensional semiconductor absorbers
US9401276B2 (en) 2010-02-12 2016-07-26 Solexel, Inc. Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
US9870937B2 (en) 2010-06-09 2018-01-16 Ob Realty, Llc High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space
US8946547B2 (en) 2010-08-05 2015-02-03 Solexel, Inc. Backplane reinforcement and interconnects for solar cells
US9748414B2 (en) 2011-05-20 2017-08-29 Arthur R. Zingher Self-activated front surface bias for a solar cell
JP5900867B1 (en) * 2015-08-24 2016-04-06 株式会社高揚 Solar panel and its surface structure
WO2017033261A1 (en) * 2015-08-24 2017-03-02 株式会社高揚 Solar panel and surface structure thereof

Also Published As

Publication number Publication date
JPH088370B2 (en) 1996-01-29

Similar Documents

Publication Publication Date Title
US5157537A (en) Distributed resonant cavity light beam modulator
US6995030B2 (en) Semiconductor chip for optoelectronics
US3877052A (en) Light-emitting semiconductor apparatus for optical fibers
US4772787A (en) Monolithically integrated opto-electronic semiconductor component
US7391939B1 (en) Optical apparatus
JP2008532297A (en) Optical waveguide
US4505264A (en) Electromagnetic wave concentrator
EP0237579B1 (en) Light deflector
US4757510A (en) Semiconductor laser device
JPS59127879A (en) Photoelectric conversion device and manufacture thereof
JPH04356015A (en) Back light
DE19709228A1 (en) Orderly interface texturing for a light-emitting device
EP1367424A3 (en) Optical modulator including microlenses for input and output beam
JP2001215448A5 (en)
JP2000147262A (en) Converging device and photovoltaic power generation system utilizing the device
CA2358104A1 (en) A backlight for correcting diagonal line distortion
JPH0695112A (en) Prism plate and information display device formed by using this plate
TW201120299A (en) Light guide microstructure plate, light guiding method, and application on window structure
JPH10221528A (en) Solar battery device
JP3526308B2 (en) Light receiving element
DE3431603C2 (en) Photoelectric converter
US4608451A (en) Cross-grooved solar cell
JP4749978B2 (en) Photocoupler capable of integrating photodetectors
JP2007188065A (en) Optical element and illuminating device
DE3810204A1 (en) Light recording element

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees