JPH0624900A - 単結晶炭化ケイ素層の製造方法 - Google Patents

単結晶炭化ケイ素層の製造方法

Info

Publication number
JPH0624900A
JPH0624900A JP4081651A JP8165192A JPH0624900A JP H0624900 A JPH0624900 A JP H0624900A JP 4081651 A JP4081651 A JP 4081651A JP 8165192 A JP8165192 A JP 8165192A JP H0624900 A JPH0624900 A JP H0624900A
Authority
JP
Japan
Prior art keywords
layer
silicon carbide
single crystal
sic
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4081651A
Other languages
English (en)
Japanese (ja)
Inventor
Christoph Scholz
クリストフ・ショルツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cs Halbleiter & Solartechnol GmbH
Original Assignee
Cs Halbleiter & Solartechnol GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cs Halbleiter & Solartechnol GmbH filed Critical Cs Halbleiter & Solartechnol GmbH
Publication of JPH0624900A publication Critical patent/JPH0624900A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP4081651A 1991-03-19 1992-03-02 単結晶炭化ケイ素層の製造方法 Pending JPH0624900A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE4109005.5 1991-03-19
DE4109005A DE4109005C1 (https=) 1991-03-19 1991-03-19

Publications (1)

Publication Number Publication Date
JPH0624900A true JPH0624900A (ja) 1994-02-01

Family

ID=6427699

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4081651A Pending JPH0624900A (ja) 1991-03-19 1992-03-02 単結晶炭化ケイ素層の製造方法

Country Status (3)

Country Link
EP (1) EP0504712B1 (https=)
JP (1) JPH0624900A (https=)
DE (2) DE4109005C1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130439A (ja) * 1994-11-01 1996-05-21 Agency Of Ind Science & Technol 高速表面弾性波素子
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
WO2015012190A1 (ja) * 2013-07-24 2015-01-29 トヨタ自動車株式会社 ＳｉＣ基板の製造方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4234508C2 (de) * 1992-10-13 1994-12-22 Cs Halbleiter Solartech Verfahren zur Herstellung eines Wafers mit einer monokristallinen Siliciumcarbidschicht
JP6488607B2 (ja) * 2014-09-22 2019-03-27 株式会社Sumco 単結晶ＳｉＣウェーハの製造方法
JP6582779B2 (ja) * 2015-09-15 2019-10-02 信越化学工業株式会社 ＳｉＣ複合基板の製造方法
SE544565C2 (en) * 2021-03-11 2022-07-19 Kiselkarbid I Stockholm Ab System and method of producing monocrystalline layers on a substrate

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59203799A (ja) * 1983-04-28 1984-11-17 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS60145992A (ja) * 1983-12-29 1985-08-01 Sharp Corp 炭化珪素単結晶基板の製造方法
JPS61243000A (ja) * 1985-04-18 1986-10-29 Sharp Corp 炭化珪素単結晶基板の製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08130439A (ja) * 1994-11-01 1996-05-21 Agency Of Ind Science & Technol 高速表面弾性波素子
US6110279A (en) * 1996-03-29 2000-08-29 Denso Corporation Method of producing single-crystal silicon carbide
WO2015012190A1 (ja) * 2013-07-24 2015-01-29 トヨタ自動車株式会社 ＳｉＣ基板の製造方法
JP2015024932A (ja) * 2013-07-24 2015-02-05 トヨタ自動車株式会社 ＳｉＣ基板の製造方法
CN105408531A (zh) * 2013-07-24 2016-03-16 丰田自动车株式会社 SiC基板的制造方法
US9951441B2 (en) 2013-07-24 2018-04-24 Toyota Jidosha Kabushiki Kaisha Method for producing SiC substrate

Also Published As

Publication number Publication date
EP0504712A1 (de) 1992-09-23
EP0504712B1 (de) 1995-07-26
DE4109005C1 (https=) 1992-09-10
DE59203001D1 (de) 1995-08-31

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