JPH06232243A - Electrostatic chuck - Google Patents

Electrostatic chuck

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Publication number
JPH06232243A
JPH06232243A JP3469993A JP3469993A JPH06232243A JP H06232243 A JPH06232243 A JP H06232243A JP 3469993 A JP3469993 A JP 3469993A JP 3469993 A JP3469993 A JP 3469993A JP H06232243 A JPH06232243 A JP H06232243A
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Prior art keywords
electrostatic chuck
sample
flame
conductor
ceramic
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JP3469993A
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Japanese (ja)
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JP3323924B2 (en )
Inventor
Osamu Morita
治 森田
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Sumitomo Metal Ind Ltd
住友金属工業株式会社
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Abstract

PURPOSE:To provide an electrostatic chuck wherein its dielectric breakdown strength and its stability are excellent without lowering its attraction property and its response property and its degradation is suppressed. CONSTITUTION:The surface of an aluminum conductor 1 as a disk-shaped electrode is covered with a ceramic flame-sprayed film 2 as an insulator, and the side face, the bottom face and the corner part are covered with a ceramic flame-sprayed film 3. The ceramic flame-sprayed film 2 to be used as the attraction part of a sample is formed in such a way that an Al2O3 ceramic powder containing 25wt.% or lower of TiO2 is adjusted to obtain a volume resistivity of 10<9> to 10<11>OMEGA.cm and that the powder is flame-sprayed onto the surface of the conductor 1. In addition, the ceramic flame-sprayed film 3 for all other parts is formed in such a way that an Al2O3 ceramic powder which has been adjusted to obtain a volume resistivity of 10<12> to 10<14>OMEGA.cm is flame-sprayed onto the side face, the bottom face and the corner part of the conductor 1. The sample 9 is placed on the ceramic flame-sprayed film 2, and the sample 9 is attracted and held by applying a voltage.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、例えば半導体集積回路表面上に成膜処理又はエッチング処理等の各種処理が施される試料を、静電力により吸着,保持する静電チャックに関する。 The present invention relates to, for example, a sample in which various processes such as film forming process or an etching process on a semiconductor integrated circuit on the surface is performed, the suction by an electrostatic force, an electrostatic chuck for holding.

【0002】 [0002]

【従来の技術】エッチング装置又はCVD装置内にて半導体基板に種々の処理を施す場合に、半導体基板を各装置内に保持するために静電チャックが用いられている。 If BACKGROUND ART performing various processes on a semiconductor substrate by an etching apparatus or a CVD apparatus, and the electrostatic chuck is used to hold the semiconductor substrate in each device.
静電チャックは導電体上に絶縁膜を被覆し、この絶縁膜の上面に被吸着物である半導体基板を密接させ、導電体と半導体基板との間に直流電圧を印加して、両者間に静電力を生ぜしめ、この静電力により半導体基板を導電体上に吸着,保持するものである。 The electrostatic chuck covers the insulating film on the conductor, the insulating film is in close contact with the semiconductor substrate is a adsorbate on the upper surface of a DC voltage is applied between the conductor and the semiconductor substrate, between them give rise to electrostatic adsorption of the semiconductor substrate on a conductor by the electrostatic force, it is to hold.

【0003】本願出願人は、実開昭64−11542 号公報において、導電体上にセラミックス溶射により絶縁膜を被覆した静電チャックを提案した。 [0003] Applicant, in Japanese Unexamined Utility Model Publication No. 64-11542 has proposed an electrostatic chuck coated with an insulating film by thermally sprayed ceramic on the conductive body. 図4は、この一例である静電チャックの模式的縦断面図であり、円板型電極であるアルミニウムの導電体11の全表面にセラミックス溶射によりAl 23を主成分とした絶縁膜(以下セラミックス溶射膜という)12が被覆されている。 Figure 4 is a schematic longitudinal sectional view of an electrostatic chuck which is an example of this, an insulating film mainly composed of Al 2 O 3 by ceramic spraying the entire surface of the aluminum conductor 11 is a disc-shaped electrode ( hereinafter referred ceramics sprayed film) 12 is covered. 導電体11よりも大きい直径の水冷ジャケット17が、導電体11の下部及び下面を覆う様態にて配されている。 Water cooling jacket 17 of larger diameter than the conductor 11 are distribution in a manner that covers the lower surface and the lower surface of the conductor 11. 水冷ジャケット Water-cooled jacket
17内には流通孔18が設けられており、冷媒の流通により導電体11を冷却するようになっている。 The inside 17 is provided with communication holes 18, so as to cool the conductor 11 by the flow of the refrigerant. また、導電体11 In addition, the conductor 11
の下面中央部には電圧印加用の端子16が接続されており、絶縁膜12上の平坦な吸着部に載置された試料19が、 Of the lower surface central portion is connected to the terminal 16 for voltage application, the sample 19 placed on the flat suction portion on the insulating film 12,
電圧印加により吸着, 保持されようになっている。 It has become adsorbed, is retained as a voltage is applied.

【0004】このようなセラミックス溶射膜を用いた静電チャックは、従来の、導電体をセラミックスに埋設したタイプ, 導電体表面に絶縁体フィルムを貼付したタイプのものと比較して、吸着部の耐熱性及び耐久性に優れ、静電吸着力が大きい等の利点を有している。 [0004] The electrostatic chuck using such ceramics sprayed film, the conventional type of electrical conductors embedded in the ceramic, as compared with those of the type affixed an insulator film to the conductor surface, the suction unit excellent heat resistance and durability, and has advantages such as an electrostatic attraction force is larger.

【0005】しかしながら、上述の如きAl 23を主成分としたセラミックス溶射膜を用いた静電チャックは、応答特性に劣るという問題があった。 However, the electrostatic chuck using the ceramics sprayed film mainly containing such Al 2 O 3 described above has a problem of poor response characteristics. 即ち、試料が吸着されるまでの飽和吸着力到達時間が長い、又は電圧印加を停止してから残留電荷が消滅するまでの吸着力消滅時間が長い。 That is, long saturated adsorption force time to reach the sample is adsorbed, or residual charge stop the voltage application is long suction force disappears time to disappear. これを解決するために、本願出願人は、 To solve this problem, the present applicant has
特開平3−204924号公報において、体積固有抵抗率(以下体積抵抗率という)が低い組成のセラミックス溶射膜を用いた静電チャックを提案した。 In JP-A-3-204924, JP-volume resistivity (hereinafter referred to as volume resistivity) proposed an electrostatic chuck using a ceramic sprayed coating low compositional.

【0006】図5は、この一例である静電チャックの模式的縦断面図である。 [0006] Figure 5 is a schematic longitudinal sectional view of an electrostatic chuck which is an example of this. 円板型電極であるアルミニウムの導電体21の全表面が、セラミックス溶射膜22で被覆されており、このセラミックス溶射膜22の組成は、Al 2 The entire surface of the aluminum conductor 21 is a disc-type electrode is covered with a ceramics sprayed film 22, the composition of the ceramics sprayed film 22, Al 2 O
3に対して25wt%以下の割合でTiO 2が含まれたものである。 3 in which the TiO 2 contained in an amount of 25wt% or less with respect to. なお、このセラミックス溶射膜22は、溶射時に生じた細孔に樹脂を含浸させて、絶縁膜を保護する封孔処理が施されている。 Incidentally, the thermally sprayed ceramic film 22 is in pores that occurred during spraying impregnated with resin, sealing treatment is applied to protect the insulating layer. 導電体21の内部には冷却ブライン24が設けられており、冷媒の流通により導電体21を冷却できるようになっている。 Inside the conductor 21 are cooled brine 24 is provided, which is to be cooled conductor 21 by the flow of the refrigerant. また、導電体21の底部中央には電圧端子25が導入されており、電圧印加により静電チャック上に載置された試料29が吸着,保持されようになっている。 Moreover, the bottom center of the conductor 21 has been introduced a voltage terminal 25, the sample 29 placed on the electrostatic chuck by applying a voltage is adapted to be attracted, it retained.

【0007】このような構成の静電チャックでは、セラミックス溶射膜22をTiO 2が含有された組成にすることにより、その体積抵抗率が10 9 〜10 11 Ω・cmとなるように調整している。 [0007] In the electrostatic chuck having such a configuration, by a thermally sprayed ceramic film 22 to the composition of TiO 2 is contained, and adjusted so that its volume resistivity is 10 9 ~10 11 Ω · cm there. これにより応答特性を向上させ、即ち静電吸着力が大きくしかも残留吸着力が殆ど存在せず、さらには絶縁破壊を生じることがない静電チャックを得ることができる。 Thus to improve the response characteristic, i.e. the electrostatic adsorption force is larger Moreover residual attracting force hardly exist, it is possible to obtain the electrostatic chuck never cause dielectric breakdown.

【0008】 [0008]

【発明が解決しようとする課題】しかしながら、体積抵抗率が低いセラミックス溶射膜は、体積抵抗率が高いセラミックス溶射膜に比較して絶縁耐圧が低く、安定性が低い。 [SUMMARY OF THE INVENTION However, lower ceramics sprayed film volume resistivity is lower in withstand voltage as compared to a high ceramics sprayed film volume resistivity, less stable. また、セラミックス溶射膜は、プラズマ溶融セラミックスをスプレー散布するという製法上、導電体の平坦な吸着部に溶射されたものよりも、凹凸を有する側面, 角部に溶射されたものの方が、溶射付着率が低く、 Further, the ceramics sprayed film is on method of spraying sprayed plasma melting ceramics, than those sprayed flat suction portion of the conductor, the side surface having irregularities found the following those sprayed into the corners, spray deposition the rate is low,
従って絶縁耐圧が低い。 Therefore, a low dielectric breakdown voltage. さらに、半導体製造過程において、静電チャックがプラズマ雰囲気中に配設される場合は、プラズマに直接曝される側面及び角部は、試料を保持することによりプラズマに直接曝されない吸着部よりも、プラズマ処理回数が増すに従い耐久性が著しく低下する。 Further, in the semiconductor manufacturing process, when the electrostatic chuck is disposed in a plasma atmosphere, side and corner portions is directly exposed to the plasma, rather than the suction portion is not directly exposed to plasma by holding a sample, durability is significantly lowered in accordance with plasma processing number is increased.

【0009】これらのことから、上述の体積抵抗率が低いセラミックス溶射膜を用いた静電チャックは、その側面及び角部において、絶縁耐圧及び耐久性が低いという問題があった。 [0009] From these facts, the electrostatic chuck volume resistivity described above using low ceramics sprayed film, at its side surfaces and corners, there is a problem of low dielectric strength and durability.

【0010】本発明は、かかる事情に鑑みてなされたものであり、静電チャックの試料吸着部外に形成される絶縁膜の組成を、吸着部とは異なる体積抵抗率の組成にすることにより、吸着性及び応答性を低下させずに、絶縁耐圧及び安定性に優れ、劣化が抑制される静電チャックを提供することを目的とする。 [0010] The present invention has been made in view of such circumstances, the composition of the insulating film formed on the sample adsorption outer electrostatic chuck, by the composition of different volume resistivity and adsorption unit , without reducing the adsorptive and responsiveness, excellent dielectric strength and stability, and to provide an electrostatic chuck which deterioration can be suppressed.

【0011】 [0011]

【課題を解決するための手段】本発明に係る静電チャックは、導電体が絶縁膜で被覆され、試料と前記絶縁膜との間に電圧を印加して前記絶縁膜上に試料を吸着する静電チャックにおいて、前記絶縁膜の前記試料に対する吸着部と他の一部又は全部とが、体積固有抵抗率を異ならせる組成で構成されていることを特徴とする。 Means for Solving the Problems An electrostatic chuck according to the present invention, the conductor is covered with an insulating film, to adsorb the sample voltage on the insulating film by applying a between the sample and the insulating film in the electrostatic chuck, wherein a suction portion with respect to the sample of the insulating film and the other part or the whole, characterized in that it is constituted by a composition varying the volume resistivity.

【0012】 [0012]

【作用】本発明の静電チャックでは、試料を保持する吸着部と他の一部又は全部とを異なる体積固有抵抗率となるよう形成している。 [Action] In the electrostatic chuck of the present invention forms such as the adsorption portion and the other part or an entire different volume resistivity for holding a sample. 吸着部に体積固有抵抗率が低い絶縁膜を用い、側面及び角部等のような他の一部又は全部に体積固有抵抗率が高い絶縁膜を用いた場合は、吸着部は試料との吸着力及び応答特性に優れ、他の一部又は全部は絶縁耐圧及び安定性に優れ、その結果劣化が抑制される。 Using the specific volume resistivity is lower insulating film in the adsorption unit, in the case of using the other portion or all the volume resistivity high dielectric film, such as side surfaces and corners, the suction unit suction the sample excellent force and response characteristics, other part or all has excellent dielectric strength and stability, resulting deterioration is suppressed.

【0013】 [0013]

【実施例】以下、本発明をその実施例を示す図面に基づき具体的に説明する。 EXAMPLES The following specifically explained based on the present invention with reference to the drawings showing its embodiments. 図1は、本発明の静電チャックの模式的縦断面図である。 Figure 1 is a schematic longitudinal sectional view of the electrostatic chuck of the present invention. 円板型電極であるアルミニウムの導電体1の内部には冷却ブライン4が設けられており、図中矢符方向に冷媒を流通させることにより、導電体1を冷却できるようになっている。 Inside the conductor 1 of aluminum as the disk-type electrode is cooled brine 4 is provided by circulating the refrigerant in FIG Nakaya marks direction, so that the conductor 1 can be cooled. この導電体1の全表面には絶縁体が被覆されており、この絶縁体は、導電体1の上面を被覆するセラミックス溶射膜2、及び側面, 底面及び角部を被覆するセラミックス溶射膜3である。 The entire surface of the conductor 1 is covered insulator, the insulator is ceramics sprayed film 2 that covers the upper surface of the conductor 1, and the side surfaces, ceramics sprayed film 3 covering the bottom and corners is there. 前記吸着部となるセラミックス溶射膜2は、TiO Ceramics sprayed film 2 serving as the suction unit, TiO
2を含むAl 23のセラミックス粉末を、その体積抵抗率が10 9 〜10 11 Ω・cmとなるように調整し、プラズマにより高温溶融させて、導電体1の上面にスプレー状に散布して溶着することにより形成される。 The ceramic powder of Al 2 O 3 containing 2, was adjusted so that the volume resistivity is 10 9 ~10 11 Ω · cm, by hot melt by the plasma, sprayed in a spray form to the upper surface of the conductor 1 formed by welding Te. また、前記他の全部となるセラミックス溶射膜3は、その体積抵抗率が10 12 〜10 14 Ω・cmとなるように調整されたAl 23 Further, the ceramics sprayed film 3 serving as the other whole is, Al 2 O 3 whose volume resistivity is adjusted to be 10 12 ~10 14 Ω · cm
のセラミックス粉末を、導電体1の側面,底面及び角部に同様に溶着することにより形成される。 The ceramic powder, the side surface of the conductor 1 is formed by welding in the same manner on the bottom and corners. このように、 in this way,
異なる組成のセラミックス溶射膜2,3が形成された後、溶射によりセラミックス溶射膜2,3に生じた細孔に樹脂を含浸させて封孔処理を施す。 After the different compositions ceramics sprayed film 2 is formed, spraying the resin impregnated into the pores generated in the ceramics sprayed film 2 by performing sealing treatment. この封孔処理により、静電チャックの絶縁耐圧はさらに向上する。 This sealing treatment, the breakdown voltage of the electrostatic chuck is further improved.

【0014】また、導電体1の底部中央には電圧端子5 Further, voltage terminal 5 is in the center of the bottom of the conductor 1
が導入,接続されている。 There introduction, are connected. このように形成された静電チャックの吸着部、即ちセラミックス溶射膜2上に試料9 Adsorption portion of the thus formed electrostatic chuck, i.e. samples on the ceramics sprayed film 2 9
が載置され、電圧印加により試料9が吸着, 保持されようになっている。 There is placed, the sample 9 is adapted to be attracted, held by the voltage application. なお、本実施例のセラミックス溶射膜2の組成は、Al 23に対しTiO 2を5〜25%含有させたものであり、セラミックス溶射膜3はAl 23 The composition of the ceramics sprayed film 2 of the present embodiment is intended to Al 2 O 3 was contained TiO 2 5 to 25%, the ceramics sprayed film 3 is Al 2 O 3
94%以上である。 It is 94% or more.

【0015】以上の如き静電チャックをプラズマ装置内に配設し、プラズマ処理を行うと共にリーク電流を測定した。 [0015] disposed within the above-described electrostatic chuck of the plasma device, of leak current with a plasma treatment. 図2はこのリーク電流を測定するための装置の模式的断面図である。 Figure 2 is a schematic cross-sectional view of an apparatus for measuring the leakage current. プラズマ装置P内に本実施例の静電チャック8を配設する。 The electrostatic chuck 8 of this embodiment will be disposed in the plasma device P. 静電チャック8の電圧端子5は電流計6を介して直流電源7に接続されている。 Voltage terminal 5 of the electrostatic chuck 8 is connected to a DC power supply 7 through the ammeter 6. 静電チャック8上に試料9を載置し、静電チャック8に直流電圧を印加すると、試料9は静電チャック8の吸着部に吸着,保持される。 Samples 9 is placed on the electrostatic chuck 8, when a DC voltage is applied to the electrostatic chuck 8, Sample 9 sucked by the suction portion of the electrostatic chuck 8, is held. そして、試料9にプラズマを照射し、 Then, by irradiating a plasma to a sample 9,
電流計6に流れるリーク電流値を測定する。 Measuring the leakage current flowing through the ammeter 6.

【0016】図3は、この測定結果を示したグラフである。 [0016] Figure 3 is a graph showing the measurement results. 縦軸はリーク電流値を、横軸は印加電圧値を表している。 The vertical axis represents the leak current value and the horizontal axis represents the applied voltage value. 上述の本実施例の静電チャック8及び従来例として従来の静電チャックについてリーク電流を測定した。 The leakage current was measured for conventional electrostatic chuck as an electrostatic chuck 8 and the conventional example described above of the present embodiment.
グラフから明らかなように、本実施例の静電チャックのリーク電流は、従来のものと比較して低く、絶縁膜が安定であり、静電チャックの絶縁耐圧が優れていることが判る。 As apparent from the graph, the leakage current of the electrostatic chuck of the present embodiment is lower compared to that of conventional insulating films is stable, it can be seen that the withstand voltage of the electrostatic chuck is excellent.

【0017】なお、本実施例では、絶縁膜の吸着部及び他の全部にセラミックス溶射膜を用いたが、これに限るものではなく、吸着部には体積抵抗率が低く試料の吸着力及び応答特性に優れる絶縁膜を、側面及び角部には体積抵抗率が高く絶縁耐圧特性に優れる、例えば樹脂コーティングを用いても良い。 [0017] In the present embodiment uses the ceramics sprayed film to all the adsorption portion and the another insulating film is not limited to this, suction force and response of the sample low volume resistivity on the suction unit an insulating film having excellent characteristics, superior high withstand voltage characteristic volume resistivity on the sides and corners, may be used, for example, a resin coating.

【0018】また、本実施例では、側面, 底面及び角部に体積抵抗率が高い絶縁膜を形成しているが、これに限るものではなく、絶縁膜が形成し易くプラズマの影響を受けにくいような底面は、低い体積抵抗率の絶縁膜を形成しても良い。 Further, in this embodiment, the side surface, although the volume resistivity on the bottom and corners to form a high dielectric film is not limited to this, less susceptible to easy the plasma insulating film is formed bottom like may form an insulating film of a low volume resistivity.

【0019】 [0019]

【発明の効果】以上のように、本発明においては、静電チャックの絶縁膜の吸着部と他の一部又は全部を体積抵抗率が異なる組成で形成することにより、特に絶縁耐圧及び安定性が低くなり易い側面及び角部のような、他の一部又は全部の絶縁膜の絶縁耐圧及び安定性を向上することができる。 As is evident from the foregoing description, in the present invention, by the suction portions of the insulating film of the electrostatic chuck and the other part or the whole of the volume resistivity is made of different compositions, in particular the dielectric strength and stability it can be as easily sides and corners lowered, thereby improving the dielectric strength and stability of the other part or the whole of the insulating film. これにより、静電チャックの吸着性及び応答性を低下させずに、絶縁耐圧及び安定性が向上し、 Thus, without reducing the adsorptive and responsiveness of the electrostatic chuck, and improved dielectric strength and stability,
劣化が抑制される等、本発明は優れた効果を奏するものである。 Such deterioration is suppressed, the present invention exhibits an excellent effect.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の静電チャックの模式的縦断面図である。 1 is a schematic longitudinal sectional view of the electrostatic chuck of the present invention.

【図2】リーク電流を測定するための装置の模式的断面図である。 2 is a schematic cross-sectional view of an apparatus for measuring the leakage current.

【図3】リーク電流の測定結果を表したグラフである。 Figure 3 is a graph showing the measurement results of the leakage current.

【図4】従来の静電チャックの模式的縦断面図である。 4 is a schematic longitudinal sectional view of a conventional electrostatic chuck.

【図5】従来の静電チャックの模式的縦断面図である。 5 is a schematic longitudinal sectional view of a conventional electrostatic chuck.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 導電体 2 セラミックス溶射膜 3 セラミックス溶射膜 4 冷却ブライン 5 電圧端子 6 電流計 7 直流電源 8 静電チャック 9 試料 First conductor 2 ceramics sprayed film 3 thermally sprayed ceramic film 4 cooled brine 5 voltage terminal 6 ammeter 7 DC power supply 8 electrostatic chuck 9 samples

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 導電体が絶縁膜で被覆され、試料と前記絶縁膜との間に電圧を印加して前記絶縁膜上に試料を吸着する静電チャックにおいて、 前記絶縁膜の前記試料に対する吸着部と他の一部又は全部とが、体積固有抵抗率を異ならせる組成で構成されていることを特徴とする静電チャック。 1. A conductor covered with an insulating film, in an electrostatic chuck which attracts the sample voltage on the insulating film by applying a between the sample and the insulating film, adsorption to the sample of the insulating film electrostatic chuck part and the other part or the whole, characterized in that it is constituted by a composition varying the volume resistivity.
JP3469993A 1993-01-29 1993-01-29 An electrostatic chuck Expired - Lifetime JP3323924B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3469993A JP3323924B2 (en) 1993-01-29 1993-01-29 An electrostatic chuck

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Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514243A (en) * 1993-12-28 1996-05-07 Matsushita Electric Industrial Co., Ltd. Dry etching apparatus
WO1999025006A2 (en) * 1997-11-06 1999-05-20 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6204489B1 (en) * 1998-01-09 2001-03-20 Ngk Insulators, Ltd. Electrically heated substrate with multiple ceramic parts each having different volume restivities
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
US6581275B2 (en) 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US7067178B2 (en) 2001-05-25 2006-06-27 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
JP2007332462A (en) * 2000-12-12 2007-12-27 Tokyo Electron Ltd Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment
JP2008258374A (en) * 2007-04-04 2008-10-23 Hitachi High-Technologies Corp Electrode for mounting wafer
WO2014013863A1 (en) * 2012-07-17 2014-01-23 東京エレクトロン株式会社 Bottom electrode and plasma treatment apparatus
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
US9481608B2 (en) 2005-07-13 2016-11-01 Applied Materials, Inc. Surface annealing of components for substrate processing chambers

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5514243A (en) * 1993-12-28 1996-05-07 Matsushita Electric Industrial Co., Ltd. Dry etching apparatus
US6108189A (en) * 1996-04-26 2000-08-22 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
US6414834B1 (en) 1996-04-26 2002-07-02 Applied Materials, Inc. Dielectric covered electrostatic chuck
US6721162B2 (en) 1996-04-26 2004-04-13 Applied Materials Inc. Electrostatic chuck having composite dielectric layer and method of manufacture
WO1999025006A2 (en) * 1997-11-06 1999-05-20 Applied Materials, Inc. Electrostatic chuck having improved gas conduits
WO1999025006A3 (en) * 1997-11-06 1999-10-28 Applied Materials Inc Electrostatic chuck having improved gas conduits
US6294771B2 (en) 1998-01-09 2001-09-25 Ngk Insulators, Ltd. Electrically heated substrate with multiple ceramic parts each having different volume resitivities
US6204489B1 (en) * 1998-01-09 2001-03-20 Ngk Insulators, Ltd. Electrically heated substrate with multiple ceramic parts each having different volume restivities
US6263829B1 (en) 1999-01-22 2001-07-24 Applied Materials, Inc. Process chamber having improved gas distributor and method of manufacture
JP2007332462A (en) * 2000-12-12 2007-12-27 Tokyo Electron Ltd Method for regenerating plasma treatment container, member inside the plasma treatment container, method for manufacturing the member inside the plasma treatment container and apparatus for plasma treatment
US6581275B2 (en) 2001-01-22 2003-06-24 Applied Materials Inc. Fabricating an electrostatic chuck having plasma resistant gas conduits
US7067178B2 (en) 2001-05-25 2006-06-27 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
US7544393B2 (en) 2001-05-25 2009-06-09 Tokyo Electron Limited Substrate table, production method therefor and plasma treating device
US9481608B2 (en) 2005-07-13 2016-11-01 Applied Materials, Inc. Surface annealing of components for substrate processing chambers
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
JP2008258374A (en) * 2007-04-04 2008-10-23 Hitachi High-Technologies Corp Electrode for mounting wafer
US8980045B2 (en) 2007-05-30 2015-03-17 Applied Materials, Inc. Substrate cleaning chamber and components
WO2014013863A1 (en) * 2012-07-17 2014-01-23 東京エレクトロン株式会社 Bottom electrode and plasma treatment apparatus
JP2014022518A (en) * 2012-07-17 2014-02-03 Tokyo Electron Ltd Lower electrode and plasma processing device

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