JPH0622265B2 - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0622265B2 JPH0622265B2 JP60030447A JP3044785A JPH0622265B2 JP H0622265 B2 JPH0622265 B2 JP H0622265B2 JP 60030447 A JP60030447 A JP 60030447A JP 3044785 A JP3044785 A JP 3044785A JP H0622265 B2 JPH0622265 B2 JP H0622265B2
- Authority
- JP
- Japan
- Prior art keywords
- resin
- filler
- semiconductor element
- hollow body
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
- H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Description
【発明の詳細な説明】 〔発明の利用分野〕 本発明は半導体装置に係り、特に、樹脂による半導体素
子の封止構造に関するものである。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly, to a structure for sealing a semiconductor element with a resin.
半導体素子を樹脂で封止することは半導体分野で広く行
われている。樹脂の熱膨張係数は半導体素子のそれより
５０〜１００倍も大きいため、特開昭５８−184745 号
広報に示されるように、樹脂中にシリカやアルミナ等の
中実体フイラーを添加して封止体の熱膨張係数を下げ
て、半導体素子に熱膨張差に伴う熱歪ができるだけ加わ
らないようにして半導体素子の破壊を防いでいる。中実
体フイラーの添加量が増える程、封止体の熱膨張係数は
下るが反面、封止硬化前において粘度が高くなつて封止
作業が困難になる。また、中実体フイラーの添加量を調
整しても、半導体素子の破壊を確実に防ぐことは不可能
であることが分つた。それは、熱膨張係数は下つても、
中実体フイラーを含むことで、封止体の弾性係数が増加
し、熱歪を十分低くすることができないためである。Sealing a semiconductor element with a resin is widely performed in the semiconductor field. Since the thermal expansion coefficient of the resin is 50 to 100 times larger than that of the semiconductor element, as shown in JP-A-58-184745, a solid filler such as silica or alumina is added to the resin for sealing. The thermal expansion coefficient of the body is lowered so that thermal strain due to the difference in thermal expansion is not applied to the semiconductor element as much as possible to prevent destruction of the semiconductor element. As the amount of the solid filler added increases, the coefficient of thermal expansion of the sealing body decreases, but on the other hand, the viscosity increases before the sealing is cured, and the sealing operation becomes difficult. Further, it has been found that it is impossible to surely prevent the destruction of the semiconductor element even if the amount of the solid filler added is adjusted. It has a lower coefficient of thermal expansion,
This is because the inclusion of the solid filler increases the elastic modulus of the sealing body and cannot sufficiently reduce the thermal strain.
本発明の目的は、半導体素子の破壊を生ずることがな
く、製作の容易な樹脂封止型の半導体装置を提供するに
ある。An object of the present invention is to provide a resin-encapsulated semiconductor device which is easy to manufacture without damaging a semiconductor element.
本発明の他の目的は、電気的特性の良好な樹脂封止型の
半導体装置を提供するにある。Another object of the present invention is to provide a resin-sealed semiconductor device having good electrical characteristics.
上記目的を達成する本発明の特徴とするところは、中空
体フイラーを封止樹脂に添加していることにある。A feature of the present invention that achieves the above object is that a hollow body filler is added to a sealing resin.
図面は本発明の一実施例を示している。 The drawings show an embodiment of the invention.
半導体素子１をヒートシンク２にセラミツク板３を介し
て搭載している。セラミツク板３には選択的に端子板４
が設けられ、ここに外部リード５が固定されている。半
導体素子１と外部リード５は内部リード６で接続されて
いる。７は樹脂ケースで、下端がヒートシンク２に接着
され上面には樹脂注入孔８を備えている。この注入孔８
から、中実体フイラーと中空体フイラーを添加したエポ
キシ樹脂を注入し、加熱硬化させた。この時、中実体フ
イラーは半導体素子１の周辺に比重差で沈降し、上方に
中空体フイラーが位置した。図面では中空体フイラーを
多く含む領域を９、中空体フイラーを多く含む領域を１
０で示している。中空体フイラーは樹脂に対し４０％、
中実体フイラーは１０％添加している。中実体フイラー
は従来より用いられているシリカ，アルミナ等を用い、
中空体フイラーとしては、シリカを主体としたシリカバ
ルーン、シリカに約２０％のアルミナを含むシラスバル
ーン，アルミナからなるアルミナバルーン、無機質硅酸
塩やホウ硅酸ガラス等からなるガラスバルーン等がある
が、上記実施例では、５０〜６０％のシリカと約３０％
のアルミナ他を含むアルミノシリケートバルーンを用い
た。これらのバルーンは天然に産するものであり、半導
体にとつては有害とされるＮa+，Ｃl-，Ｋ+ といつたイ
オン性不純物が表面あるいは体内に付着しているので、
使用に際しては、中実体フイラーと共に表面をよく洗浄
し、これらの不純物を除去して用いた。The semiconductor element 1 is mounted on the heat sink 2 via the ceramic plate 3. The terminal board 4 is selectively provided on the ceramic board 3.
Is provided, and the external lead 5 is fixed thereto. The semiconductor element 1 and the external lead 5 are connected by the internal lead 6. A resin case 7 has a lower end bonded to the heat sink 2 and a resin injection hole 8 provided on the upper surface. This injection hole 8
Then, an epoxy resin added with a solid filler and a hollow filler was injected and cured by heating. At this time, the solid filler was settled around the semiconductor element 1 due to the difference in specific gravity, and the hollow filler was positioned above. In the drawing, 9 areas include many hollow body fillers, and 1 area include many hollow body fillers.
It is indicated by 0. Hollow body filler is 40% of resin,
Solid filler is added at 10%. The solid filler uses silica, alumina, etc., which have been conventionally used,
As the hollow body filler, there are a silica balloon mainly composed of silica, a shirasu balloon containing about 20% alumina in silica, an alumina balloon composed of alumina, a glass balloon composed of an inorganic silicate or borosilicate glass, etc. , In the above example, 50-60% silica and about 30%
The aluminosilicate balloon containing alumina etc. was used. These balloons are naturally produced, and Na + , Cl − , K + , which are harmful to semiconductors, and ionic impurities adhere to the surface or body,
At the time of use, the surface was thoroughly washed with a solid filler to remove these impurities before use.
中実体フイラーを全く含まなくてもよいが、中実体フイ
ラーを含むと次の点で有利である。Although the solid filler may not be included at all, the inclusion of the solid filler is advantageous in the following points.
即ち、硬化前に樹脂はフイラーとよくかきまぜ、フイラ
ーを樹脂中に均等に分散させる必要がある。この時、中
空体フイラーが破壊し、体内における不純物が樹脂中に
混つて、半導体素子１に到達し、電気的特性を悪化する
恐れがある。中実体フイラーが半導体素子１の周辺に先
に沈降すると、割れた中空体フイラーがそれだけ半導体
素子１から離れ、電気的特性を悪化しなくなり、良好な
電気的特性が保てるのである。中空体フイラーを破壊す
るほどの力を加えてフイラーを樹脂に分散させた時、半
導体素子１の周辺に１mm程度の厚さで中実体フイラーを
含む樹脂９が位置するようにすると、中空体フイラー内
部から出た不純物によつて電気的特性が低下しなかつ
た。厚さが０．５mm以下では不純物の影響が確認され
た。That is, the resin should be well mixed with the filler before curing, and the filler should be evenly dispersed in the resin. At this time, the hollow body filler may be destroyed, impurities in the body may be mixed in the resin, reach the semiconductor element 1, and deteriorate electrical characteristics. When the solid filler first settles around the semiconductor element 1, the broken hollow body filler is separated from the semiconductor element 1 by that amount, and the electrical characteristics are not deteriorated, and good electrical characteristics can be maintained. When the filler is dispersed in the resin by applying a force enough to destroy the hollow body filler, if the resin 9 including the solid filler is located around the semiconductor element 1 with a thickness of about 1 mm, the hollow body filler is formed. The electrical characteristics were not deteriorated by the impurities emitted from the inside. The influence of impurities was confirmed when the thickness was 0.5 mm or less.
尚、中実体フイラーと中空体フイラーの混合比は樹脂の
種類，処理条件に応じて、任意に決め得るものである。The mixing ratio of the solid filler and the hollow filler can be arbitrarily determined according to the type of resin and the processing conditions.
中空体フイラーの平均粒径は５０〜３００μｍ程度が良
い。５０μｍ以下ではこれを含む樹脂の弾性率が高くな
つて、熱歪を低下させる効果がでない。また、３００μ
ｍ以上では、中空体フイラー自体の圧縮強度が低下し、
樹脂との混合時に中空体フイラーを破壊させる確率が高
くなる。また、中空体フイラーの径が大きくなると、ボ
イド放電を起し易く、３００μｍ以下ではボイド放電は
認められなかった。因みにこの時印加した電圧は4000Ｖ
である。The average particle size of the hollow body filler is preferably about 50 to 300 μm. If it is 50 μm or less, the elastic modulus of the resin containing the resin becomes high, and the effect of lowering the thermal strain is not obtained. Also, 300μ
Above m, the compressive strength of the hollow body filler itself decreases,
The probability that the hollow body filler will be destroyed when mixed with the resin increases. Moreover, when the diameter of the hollow body filler was large, void discharge was likely to occur, and void discharge was not observed at 300 μm or less. By the way, the voltage applied at this time is 4000V.
Is.
中空体フイラーは樹脂の膨張収縮をその弾力性で吸収
し、フイラーを含む封止樹脂のみかけ上の弾性率を低下
させるので、中空体フイラーの壁厚が大きく弾性率調整
に影響する。平均粒径５０〜３００μｍのものを用いる
時、中空体フイラーの壁厚は数μｍ以下のものが望まし
い。The hollow body filler absorbs the expansion and contraction of the resin by its elasticity and reduces the apparent elastic modulus of the sealing resin including the filler, so that the wall thickness of the hollow body filler greatly affects the elastic modulus adjustment. When using an average particle size of 50 to 300 μm, the wall thickness of the hollow body filler is preferably several μm or less.
中空体フイラーを含むことで、樹脂のみかけ上の弾性率
は低下し、また、熱膨張係数も下ることから、樹脂の硬
化前の粘度を上げることなく、ケース７の注入孔８から
樹脂を注入し、ケース７内のすみずみにまで樹脂を行き
渡らせることができ、封止作業を容易に行うことができ
る。また、半導体素子１に加わる熱歪も低減することが
できる。By including the hollow body filler, the apparent elastic modulus of the resin is lowered, and the thermal expansion coefficient is also lowered. Therefore, the resin is injected from the injection hole 8 of the case 7 without increasing the viscosity before curing the resin. However, the resin can be spread all over the inside of the case 7, and the sealing operation can be easily performed. Further, the thermal strain applied to the semiconductor element 1 can be reduced.
上記の実施例で−４０〜１２０℃のヒートサイクルを加
えても、半導体素子１、セラミツク板３は熱歪によつて
破壊せず、また、直流逆電界による表面漏洩電流も異常
がなく、実用に供し得ることが確認された。Even if a heat cycle of −40 to 120 ° C. is applied in the above example, the semiconductor element 1 and the ceramic plate 3 are not destroyed by thermal strain, and the surface leakage current due to the DC reverse electric field is not abnormal. It was confirmed that it can be used for.
本発明は以上の実施例の半導体装置に限定されるもので
はなく、フイラーを含む樹脂で半導体素子を封止した各
種の半導体装置に適用できる。The present invention is not limited to the semiconductor device of the above embodiments, but can be applied to various semiconductor devices in which a semiconductor element is sealed with a resin containing a filler.
また、半導体素子１を予めシリコーンゴム等の弾性率が
低く、表面安定化機能を有する材料で覆つてから、中空
体フイラー含有樹脂で封止してもよい。Alternatively, the semiconductor element 1 may be previously covered with a material having a low elastic modulus and a surface stabilizing function, such as silicone rubber, and then sealed with the hollow body filler-containing resin.
以上述べたように、本発明によれば、半導体素子を破壊
することなく、電気的特性の良好な半導体装置を容易に
製作することができる。As described above, according to the present invention, a semiconductor device having good electric characteristics can be easily manufactured without breaking the semiconductor element.
図面は本発明の一実施例を示す樹脂封止型半導体装置の
縦断面図である。 １……半導体素子、２……ヒートシンク、３……セラミ
ツク板、５，６……リード、７……ケース、９，１０…
…フイラー含有封止樹脂。The drawing is a vertical cross-sectional view of a resin-encapsulated semiconductor device showing an embodiment of the present invention. 1 ... Semiconductor element, 2 ... Heat sink, 3 ... Ceramic plate, 5, 6 ... Lead, 7 ... Case, 9, 10 ...
... Filler-containing sealing resin.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 小辻 宣俊 茨城県日立市幸町３丁目１番１号 株式会 社日立製作所日立工場内 (56)参考文献 特開 昭48−18382（ＪＰ，Ａ) 特開 昭49−37948（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Nobutoshi Kotsuji 3-1-1 Sachimachi, Hitachi City, Ibaraki Hitachi Ltd. Hitachi Factory (56) References JP-A-48-18382 A) JP-A-49-37948 (JP, A)
Claims (1)
おいて、 上記樹脂は中空体フィラー及び中実体フィラーを有し、 中実体フィラーを有する樹脂が半導体素子周辺にあり、
該中実体フィラーを有する樹脂の周囲に中空体フィラー
を有する樹脂があることを特徴とする半導体装置。1. A semiconductor device in which a semiconductor element is sealed with a resin, wherein the resin has a hollow body filler and a solid filler, and the resin having the solid filler is present around the semiconductor element.
A semiconductor device, wherein a resin having a hollow body filler is present around the resin having a solid filler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030447A JPH0622265B2 (en) | 1985-02-20 | 1985-02-20 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60030447A JPH0622265B2 (en) | 1985-02-20 | 1985-02-20 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61191056A JPS61191056A (en) | 1986-08-25 |
| JPH0622265B2 true JPH0622265B2 (en) | 1994-03-23 |
Family
ID=12304168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60030447A Expired - Lifetime JPH0622265B2 (en) | 1985-02-20 | 1985-02-20 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0622265B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0282644A (en) * | 1988-09-20 | 1990-03-23 | Fujitsu Ltd | Semiconductor device |
| JPH065742A (en) * | 1992-06-22 | 1994-01-14 | Mitsubishi Electric Corp | Semiconductor device, resin used used for sealing and manufacture of the device |
| JP3053298B2 (en) * | 1992-08-19 | 2000-06-19 | 株式会社東芝 | Semiconductor device |
| EP0714125B1 (en) * | 1994-11-24 | 1999-12-29 | Dow Corning Toray Silicone Company Limited | Method of fabricating a semiconductor device |
| JP2010141180A (en) * | 2008-12-12 | 2010-06-24 | Nichicon Corp | Solid-state electrolytic capacitor, and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4937948A (en) * | 1972-08-12 | 1974-04-09 |
-
1985
- 1985-02-20 JP JP60030447A patent/JPH0622265B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61191056A (en) | 1986-08-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |