JPH06209565A - Protection method and protective circuit for mos type semiconductor element - Google Patents

Protection method and protective circuit for mos type semiconductor element

Info

Publication number
JPH06209565A
JPH06209565A JP218793A JP218793A JPH06209565A JP H06209565 A JPH06209565 A JP H06209565A JP 218793 A JP218793 A JP 218793A JP 218793 A JP218793 A JP 218793A JP H06209565 A JPH06209565 A JP H06209565A
Authority
JP
Japan
Prior art keywords
semiconductor element
circuit
main
type semiconductor
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP218793A
Other languages
Japanese (ja)
Inventor
Masaru Karasawa
大 唐澤
Original Assignee
Toshiba Corp
株式会社東芝
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, 株式会社東芝 filed Critical Toshiba Corp
Priority to JP218793A priority Critical patent/JPH06209565A/en
Publication of JPH06209565A publication Critical patent/JPH06209565A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To improve the availability factor of a main MOS type semiconductor element and also, prevent such short circuit accident that above and below switching circuits short-circuit at the same time, in the case of connecting, in series, a switching circuit comprising a main MOS type semiconductor element and a semiconductor element for detection connected in parallel with this, and using it as the component of a power converter. CONSTITUTION:This is a protective circuit for a MOS type semiconductor element, in which the gate of a main MOS type semiconductor element 10 and a gate drive circuit 6-1 are connected through an OFF-DELAY circuit 13, and the gate of a semiconductor element 12 for detection and the gate drive circuit are connected through an ON-DELAY circuit 14.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protection method and a protection circuit for a MOS type semiconductor device.

[0002]

2. Description of the Related Art A conventional technique will be described with reference to FIGS.

In FIG. 4, 1-1 and 1-2 are main MOSs.
In this case, an IGBT is used here as an example. 2-1 and 2-2 are DC power supplies, 3 is a reactor, and the circuit of FIG. 4 is a circuit generally called a half bridge circuit.

In the circuit as shown in FIG. 4, the main IGBT 1-
If 1 and the main IGBT 1-2 are turned on at the same time, the current will pass through the main IGBTs 1-1 and 1-2 without passing through the reactor 3, which is a load, and the power supply will be short-circuited. As shown in FIG. 6, O of the main IGBT 1-1
Between the N section and the ON section of the main IGBT1-2, a dead time section is provided in which neither the main IGBT1-1 nor the main IGBT1-2 is ON.

However, in spite of that, the main IGBT 1-
1, 1-2 are mistakenly turned on at the same time due to noise, etc.
There is a failure mode in which an overcurrent flows in T1-1 and 1-2. A conventional protection circuit for preventing element destruction due to this overcurrent will be described. FIG. 5 shows the main IGBT 1 of FIG.
It is an enlarged view of the (A) part surrounded by the collector terminal 7-1 of -1, and the emitter terminal 8-1.

The structure of the conventional protection circuit is such that the detection semiconductor element 4-1 (here, an IGBT is used as an example) and the detection resistor 5 as an example of the detection of the conduction current of the detection semiconductor element 4-1. -Connect one in series with the main I
It is configured to be connected in parallel to the GBT1-1. or,
The main IGBT 1-1 and the detection IGBT 4-1 are operated by the same gate from the gate drive circuit 6-1. When an overcurrent flows through the main IGBT1-1, the detection IG
An overcurrent proportional to BT4-1 also flows.

The overcurrent is read from the voltage of the detection resistor 5-1 to detect the short circuit overcurrent of the main IGBT 1-1, the gate signal is narrowed down to reduce the short circuit overcurrent, and finally the gate is detected. Protection is provided by stopping the signal and interrupting the short-circuit current.

[0008]

[Problems to be Solved by the Invention] O of the main IGBT 1-1
The section between N and ON of the main IGBTs 1-2, that is, both IGs
The dead time, which is the section where both BT are OFF,
The shorter the length, the better the utilization factor of the device, which is desirable. However, a short circuit between the upper and lower elements occurs not only in the main IGBTs 1-1 and 1-2, but also in the main IGBTs 1-2 and the detection IGBT, for example.
It also occurs with 4-1.

Therefore, under the dead time determined by the relationship between the main IGBTs, the detection IGBT is the main IGBT.
If it is turned on earlier, a short circuit will occur between the detection IGBT and the main IGBT, so the dead time is determined between the main IGBT and the detection IGBT. Therefore, the main IGBT
There is a problem that the dead time between them becomes longer and the utilization rate decreases. That is, if the detection IGBT is turned on earlier or later than the main IGBT, there is a problem that the utilization factor of the element is lowered.

The object of the present invention is to provide a main MO as shown in FIG.
Regarding the operation timing of the S-type semiconductor element and the detection semiconductor element, when the main MOS type semiconductor element is turned on, the detection semiconductor element is turned on late, and when the main MOS type semiconductor element is turned off, the detection semiconductor element is turned off early. Therefore, it is an object of the present invention to provide a protection method and a protection circuit for a MOS type semiconductor device in which the dead time is minimized and the utilization factor of the main MOS type semiconductor device is improved.

[0011]

In order to achieve the above object, the present invention turns off the gate of the main MOS semiconductor device 10 and the gate drive circuit 6-1 as shown in FIG. -D
The gate of the detection semiconductor element 12 and the gate drive circuit 6-1 are connected to each other via the DELAY circuit 13 and turned ON-DEL.
It is characterized by being connected via the AY circuit 14.

[0012]

In order to turn on the main MOS type semiconductor element 10, ON-DELAY is applied to the gate of the detection semiconductor element 12, and the main MOS type semiconductor element 10 turns on earlier.

When the main MOS type semiconductor device 10 is turned off, the gate of the main MOS type semiconductor device 10 is turned OFF-D.
ELAY is applied, and the semiconductor element 12 for detection has a faster O
FF. Since the dead time can be minimized by the above operation, the utilization rate of the main MOS type semiconductor device can be maximized.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to FIGS. FIG. 2 is a circuit configuration diagram embodying the embodiment of the present invention shown in FIG.

In this embodiment, the OFF-DELAY circuit 13 is composed of a parallel circuit of a resistor 15 and a diode 16. Next, the ON-DELAY circuit 14 is composed of a parallel circuit of a diode 17 and a resistor 18.
In this embodiment, the main MOS type semiconductor device 10 is composed of the IGBT 1-1 and the detection semiconductor device 12 is composed of the IGBT 4-1.

Gate drive circuit 6-1 and detection IGBT 4
-1 gate is connected via the ON-DELAY circuit 14, and the gate drive circuit 6-1 and the main IGBT 1-1 gate are connected.
To the OFF-DELAY circuit 13.

When the main IGBT 1-1 of FIG. 2 is turned on, if a positive gate voltage is applied to the gate drive circuit 6-1 and the emitter terminal 7-1, the gate-emitter of the main IGBT 1-1 is applied. The gate voltage applied between them is turned on normally without delay by the diode 16 of the OFF-DELAY circuit 13.
The gate voltage applied between the gate and emitter of the detecting IGBT 4-1 delays the ON operation of the detecting IGBT 4-1 by the resistor 18 of the ON-DELAY circuit 14. As a result, when the main IGBT1-1 turns on, the ON-DELAY circuit 14 causes the main IGBT1-1-
1 is turned on before the detection IGBT 4-1.

Next, when the main IGBT1-1 is turned off, when a negative gate voltage is applied to the gate drive circuit 6-1 and the emitter terminal 8-1, the detection IGBT4-1 turns on.
A normal delay-free OFF operation is performed by the diode 17 of the DELAY circuit 14, and the main IGBT 1-1 is OF
The OFF operation is delayed by the resistor 15 of the F-DELAY circuit 13. As a result, the main IGBT1-1 is turned off.
When operating, the OFF-DELAY circuit 13 turns off the detection IGBT4-1 before the main IGBT1-1.
To do.

Due to the above operation, the detection IGBT 4-1
Is ON inside the ON section of the main IGBT due to the action of the DELAY circuit, the dead time between the main IGBTs can be minimized and the utilization rate of the main IGBT can be improved.

Due to the above operation characteristics, the main IGBT 1-1
During operation, the detection IGBT 4-1 operates inside the main IGBT by the amount of the DELAY circuit, so that the dead time between the main IGBTs can be minimized, so that the utilization rate is improved.

In the above description, the main IGBTs 1-1, 1-
2 has been described as a single element, but the main IGBTs 1-1, 1
The same effect can be obtained when a plurality of -2 are connected in series or in parallel.

Also, ON-DELAY and OFF-DELA
The Y circuit may be physically formed as a separate circuit from the main IGBT1-1 or the detection IGBT4-1, or the main IGBT1-1-
The same effect can be obtained by manufacturing 1 or the detection IGBT 4-1 on the same semiconductor pellet or in the same semiconductor package.

[0023]

As described above, according to the present invention, the semiconductor device for detection is DELAY rather than the main MOS type semiconductor device.
Since the circuit operates inside the circuit, the ted time of the main MOS type semiconductor device can be minimized.
The remarkable effect that the main MOS type semiconductor element can be protected while the utilization factor of the type semiconductor element is improved is obtained.

[Brief description of drawings]

FIG. 1 is a block diagram showing an embodiment of the present invention.

FIG. 2 is a circuit configuration diagram showing a specific example of FIG.

FIG. 3 is an operation timing chart for explaining the operation of the present invention.

FIG. 4 is a half bridge circuit showing an application example of a MOS semiconductor device.

FIG. 5 is a partial detailed view of FIG.

FIG. 6 is a timing diagram for explaining the principle of protecting a MOS semiconductor device.

[Explanation of symbols]

1-1, 1-2 ... Main IGBT 2-1, 2-
2 ... DC power supply 3 ... Reactor 4-1
… Detecting IGBT 5-1… Detecting resistor 6-1
... Gate drive circuit 7-1 ... Collector terminal 8-1
... Etta terminal 10 ... Main MOS type semiconductor element 12 ... Detection semiconductor element 13 ... OFF-DELAY circuit 14 ... ON-DELAY circuit 15, 18 ... Resistor 16, 17 ... Diode

Claims (2)

[Claims]
1. A switching circuit in which a series circuit of a detection semiconductor element and a current detector for detecting a current flowing through the detection semiconductor element is connected in parallel to a main MOS semiconductor element between at least two sets of DC power supplies. A method for protecting a MOS-type semiconductor element, characterized in that the detection semiconductor element is turned on later than the main MOS-type semiconductor element and turned off faster than the main MOS-type semiconductor element.
2. A series circuit of a detection semiconductor element and a current detector for detecting a current flowing through the detection semiconductor element is connected in parallel to the main MOS semiconductor element, and the current detection semiconductor element and the main semiconductor element are connected. In a circuit in which at least two sets of switching circuits each having a gate driving circuit for supplying a gate signal to the MOS type semiconductor device at the same timing are connected between DC power supplies, each switching circuit is a gate driving circuit. ON-DELA between the gate and the gate of the semiconductor device for detection
A protection circuit for a MOS type semiconductor device, characterized in that an OFF-DELAY circuit is provided between the gate drive circuit and the gate of the main MOS type semiconductor device.
JP218793A 1993-01-11 1993-01-11 Protection method and protective circuit for mos type semiconductor element Pending JPH06209565A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP218793A JPH06209565A (en) 1993-01-11 1993-01-11 Protection method and protective circuit for mos type semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP218793A JPH06209565A (en) 1993-01-11 1993-01-11 Protection method and protective circuit for mos type semiconductor element

Publications (1)

Publication Number Publication Date
JPH06209565A true JPH06209565A (en) 1994-07-26

Family

ID=11522365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP218793A Pending JPH06209565A (en) 1993-01-11 1993-01-11 Protection method and protective circuit for mos type semiconductor element

Country Status (1)

Country Link
JP (1) JPH06209565A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207222A1 (en) 2011-05-02 2012-11-08 Mitsubishi Electric Corporation Power semiconductor device with a plurality of parallel switching elements
EP2597767A3 (en) * 2011-11-25 2014-08-06 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
JP2014150696A (en) * 2013-02-04 2014-08-21 Denso Corp Electronic device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012207222A1 (en) 2011-05-02 2012-11-08 Mitsubishi Electric Corporation Power semiconductor device with a plurality of parallel switching elements
US8766702B2 (en) 2011-05-02 2014-07-01 Mitsubishi Electric Corporation Power semiconductor device having plurality of switching elements connected in parallel
DE102012207222B4 (en) * 2011-05-02 2016-05-25 Mitsubishi Electric Corporation Power semiconductor device with a plurality of parallel switching elements
DE102012025769B3 (en) * 2011-05-02 2016-07-14 Mitsubishi Electric Corporation Power semiconductor device with a plurality of parallel switching elements
EP2597767A3 (en) * 2011-11-25 2014-08-06 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
JP2014150696A (en) * 2013-02-04 2014-08-21 Denso Corp Electronic device

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