JPH06163988A - Semiconductor light-emitting element and its manufacture - Google Patents

Abstract

PURPOSE:To obtain a semiconductor light emitting element wherein a plurality of light emitting regions can be formed in a chip, and light emission in a wide wavelength region is realized for a far field pattern and a near field pattern. CONSTITUTION:Semiconductor layere 11, 12 having light emission regions different in light emission wavelength region are formed on a semiconductor substrate 100. A GaAs substrate is used as the semiconductor substrate 100. The semiconductor layers are formed by using at least one kind out of Al, Ga, In, Zn and Cd, and at least one kind out of P, As, S and Se. The respective light emission regions are formed so as to have different constituent elements or composition ratios. Thereby light emission of wide wavelength region in red, green and blue wavelength regions can be realized for a far field pattern and a near field pattern.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention is capable of emitting red to blue light used in semiconductor light emitting devices, such as indoor and outdoor indicator lights, which can emit red to green light, and full color displays. The present invention relates to a semiconductor light emitting device and other semiconductor light emitting devices having a wide emission wavelength region in the infrared region or the visible region.

[0002]

2. Description of the Related Art Conventionally, a current injection type semiconductor light emitting element has a high luminous efficiency, and thus has been widely used as a small size and high brightness display element, a semiconductor laser element and the like. Further, in recent years, not only light-emitting diodes (LEDs) in individual monochromatic wavelength regions such as red, yellow, green, and blue, but also as a product that is a combination of them, it is possible to modulate from red to green outdoors. Integrated LED lamps for display displays and LED lamps for full-color displays that combine the three primary colors of red, green, and blue have been realized.

FIG. 11 shows the structure of an integrated LED lamp capable of modulating from red to green as described above. This LED lamp consists of AlGaAs on a GaAs semiconductor substrate.
It is composed of four red LEDs having a wavelength of 680 nm, which are manufactured by stacking the semiconductor layers of the system, and eight green LEDs, which are manufactured by stacking the N-doped GaP semiconductor layers on the GaP semiconductor substrate. In each LED, as shown in FIG. 12, the semiconductor chip 31 has a stem 3 that also functions as a heat sink.
It is mounted on 2 and is connected to the stem 33 by a wire 34, and is entirely molded with a transparent resin 35 such as polycarbonate or polymethacrylate (PMMA). In the integrated LED as described above, the far-field image can be changed from red to orange to yellow to green by changing the current injection amount to the red LED and the green LED and changing the brightness of each. .

On the other hand, a full-color display in which the three primary colors of red, green and blue are combined is LE with a ratio of one red LED, one green LED and two blue LEDs.
This is done by arranging the D lamp on the entire surface of the display.

In the above, a SiC-based material is mainly used for the blue LED.

[0006]

However, in the case of the outdoor display or full-color display as described above, a plurality of LEDs are arranged in order to generate light emission in a wide area from red to green or from red to blue. Since the far-field image can be emitted in a wide wavelength range because the integrated lamp is used, red, green, and blue light emission of individual LEDs can be observed in the near-field image.

The present invention is intended to solve the above problems, and an object thereof is semiconductor light emission capable of realizing light emission in a wide wavelength range for both far-field images and near-field images in the wavelength regions of red, green and blue. An element and a manufacturing method thereof. Another object of the present invention is to provide a semiconductor light emitting device capable of realizing light emission in a wide wavelength range even in a long wavelength band of 1 μm or more, and a manufacturing method thereof. Still another object of the present invention is to provide a semiconductor light emitting device capable of realizing light emission in a wide wavelength region in the visible region and a manufacturing method thereof.

[0008]

In a semiconductor light emitting device of the present invention, a plurality of semiconductor layers each having a light emitting region are laminated on a semiconductor substrate, or a plurality of semiconductor layers are arranged in parallel along the surface of the substrate, and each light emitting region is provided. Has a structure for generating light by changing the emission wavelength region, and thereby the above-mentioned object is achieved.

The semiconductor substrate is made of GaAs, and each semiconductor layer contains as its constituent elements at least one of Al, Ga, In, Zn and Cd and at least one of P, As, S and Se. And then
Each light emitting region may be made of a material in which the constituent elements are different or the composition ratio of the same constituent element is different.

The semiconductor substrate is made of InP, each semiconductor layer contains at least one of Ga and In, and at least one of P and As as its constituent elements, and each light emitting region contains the constituent element. It may be made of materials which are made different or the composition ratio of the same constituent element is made different.

The semiconductor substrate is made of GaP, and each semiconductor layer contains at least one of Al, Ga and In and at least one of P and As as constituent elements, and each light emitting region has its constitution. It may be made of materials having different elements or different composition ratios of the same constituent elements.

According to the method of manufacturing a semiconductor light emitting device of the present invention, a plurality of semiconductor layers each having a light emitting region are laminated on a semiconductor substrate with different emission wavelength regions of the respective light emitting regions, and two semiconductor layers are arranged one above the other. A method of manufacturing a semiconductor light emitting device, wherein the upper semiconductor layer of the semiconductor layer is formed by partially exposing the upper surface of the lower semiconductor layer, and a step of forming a semiconductor layer including a light emitting region on the semiconductor substrate, The upper semiconductor layer forming portion on the upper surface of the lower semiconductor layer of the two semiconductor layers that are vertically arranged including the semiconductor layer directly above the substrate is irradiated with light to be excited, and 1 or 2 is formed on the semiconductor layer immediately above the substrate. The above-described step of forming a semiconductor layer is included, whereby the above object is achieved.

According to the method of manufacturing a semiconductor light emitting device of the present invention, a plurality of semiconductor layers each having a light emitting region on a semiconductor substrate have different emission wavelength regions of the respective light emitting regions, and the light emitting region extends along the surface of the substrate. In the method for manufacturing a semiconductor light emitting device arranged in parallel with each other, including the step of irradiating light to each semiconductor layer forming portion on the upper surface of the semiconductor substrate to excite, and forming each semiconductor layer in the excited portion, By doing so, the above object is achieved.

A GaAs substrate is used as the semiconductor substrate, and each semiconductor layer is formed using at least one of Al, Ga, In, Zn and Cd and at least one of P, As, S and Se, The respective light emitting regions may be formed with different constituent elements or different composition ratios of the same constituent elements.

An InP substrate is used as the semiconductor substrate, each semiconductor layer is formed by using at least one of Ga and In, and at least one of P and As, and each light emitting region is made of different constituent elements. Alternatively, the same constituent elements may be formed with different composition ratios.

A GaP substrate is used as the semiconductor substrate, each semiconductor layer is formed using at least one of Al, Ga and In, and at least one of P and As, and each light emitting region is formed of its constituent elements. They may be formed differently or with different composition ratios of the same constituent element.

[0017]

In the semiconductor light emitting device of the present invention, a plurality of semiconductor layers each having a light emitting region are stacked on a semiconductor substrate or arranged in parallel along the substrate. Since the light emission wavelength regions of the respective light emission regions are different and formed in one chip, it is possible to realize light emission in a wide wavelength region for both the far field image and the near field image. A GaAs substrate is used as the semiconductor substrate, and the semiconductor layers are made of Al, Ga, In, Zn and Cd.
By using at least one of them and at least one of P, As, S and Se, and by forming different constituent elements of each light emitting region or different composition ratios of the same constituent elements. It is possible to realize light emission in a wide wavelength range in the red, green and blue regions. An InP substrate is used as the semiconductor substrate, and the semiconductor layer is Ga.
1 μm by using at least one of In and In and at least one of P and As, and forming different constituent elements of each light emitting region or different composition ratios of the same constituent elements. Light emission in a wide wavelength range can be realized in the above long wavelength band. Further, a GaP substrate is used as the semiconductor substrate, and the light emitting region is
It is formed by using at least one of l, Ga and In and at least one of P and As, and is formed by making the constituent elements of each light emitting region different or by making the composition ratio of the same constituent element different. As a result, light emission in a wide wavelength range can be realized in the visible range.

Further, in the method for manufacturing a semiconductor light emitting device of the present invention, the irradiated portion is excited by light irradiation to form a semiconductor layer having a light emitting region in the excited portion. Therefore, it is possible to form a plurality of light emitting regions having different emission wavelength regions in one chip.

[0019]

Embodiments of the present invention will be described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view showing a semiconductor light emitting device of Embodiment 1 of the present invention.

In this semiconductor light emitting device, an n-GaAs buffer layer 101 is formed on an n-GaAs substrate 100. A semiconductor layer 11 having a light emitting region thereon,
12 are formed. The semiconductor layer 11 is n- (Al _0.5
Ga _0.5 ) _0.5 In _0.5 P layer 102, undoped Ga _0.5 I
n _0.5 P active layer 103, p- (Al _0.5 Ga _0.5 ) _0.5 In
_{The 0.5} P layer 104 and the p-Al _0.7 Ga _0.3 As layer 105 are formed, and the semiconductor layer 12 is n- (Al _0.7 Ga _0.3 ).
_0.5 In _0.5 P layer 106, non-doped (Al _0.45 G
a _{0. 55) 0.5} In _0.5 P active layer 107, p- (Al _0.7 G
a _0.3 ) _0.5 In _0.5 P layer 108, p-Al _0.7 Ga _0.3 A
It is composed of the s layer 109. In addition, the semiconductor layers 11 and 12
Electrodes 110 and 111 are formed on the substrate 100 and the substrate 100, respectively.
A common electrode 112 is formed on the side.

A method of manufacturing this semiconductor light emitting device will be described with reference to FIG.

The growth of each semiconductor layer can be carried out by an ordinary vapor phase growth method, for example, MOCVD method (metal organic chemical vapor deposition method). The following compounds can be used as the atomic source and the dopant material forming each semiconductor layer.

Atomic source: trimethylgallium (TM
G), trimethyl aluminum (TMA), trimethylindium (TMI), arsine (AsH _3), phosphine (PH ₃₎ dopant material: silane (SiH ₄₎ (n-type dopant), dimethyl zinc (DMZn) (p-type dopant) First, as shown in FIG. 2A, the n-GaAs substrate 10
N-GaAs buffer layer 1 at a substrate temperature of 700 ° C.
Grow 01.

After that, the substrate temperature was lowered to 400 ° C.
As shown in (b), a region 11a having a width of about 150 μm on the substrate is formed with a KrF excimer laser at λ = 248 nm.
Irradiate the excitation light of. Then, n− on the region 11a
(Al _0.5 Ga _0.5 ) _0.5 In _0.5 P layer 102, non-doped Ga _0.5 In _0.5 P active layer 103, p- (Al _0.5 G
a _0.5 ) _0.5 In _0.5 P layer 104, p-Al _0.7 Ga _0.3 A
The s layer 105 is grown to be the semiconductor layer 11.

Even at a substrate temperature as low as 400 ° C., the substrate temperature rises in the region 11a irradiated with light, or the surface is electronically excited, so that the above selective growth occurs.

After that, as shown in FIG. 2C, another region 12a having a width of about 150 μm on the substrate is irradiated with the same excitation light as described above. Then, n- (Al
_0.7 Ga _0.3 ) _0.5 In _0.5 P layer 106, undoped (Al
_0.45 Ga _0.55 ) _0.5 In _0.5 P active layer 107, p- (Al
_0.7 Ga _0.3 ) _0.5 In _0.5 P layer 108, p-Al _0.7 Ga _0
.3 As layer 109 is grown to be semiconductor layer 12.

Then, the p-Al _0.7 Ga _0.3 As layer 10 is formed.
5, electrodes 110 and 111 are formed on the p-Al _0.7 Ga _0.3 As layer 109, respectively, and the common electrode 1 is provided on the substrate 100 side.
12 is formed. The wafer in this state is cut into semiconductor chips. Then, the semiconductor chip is mounted on a heat sink or a stem that also serves as a heat sink. Further, the semiconductor chip is connected to another stem by a wire, and these are molded to form a semiconductor light emitting device.

The semiconductor light emitting device of this embodiment has the semiconductor layer 1
The active layer 103 of No. 1 serves as a light emitting region to emit red light with λ = 680 nm, and the active layer 107 of the semiconductor layer 12 serves as a light emitting region to emit green light with λ = 565 nm.

By adjusting the amount of current injection into the two semiconductor layers 11 and 12 and changing the brightness, an orange color,
Emission in the wavelength range between red and green, such as yellow, can be produced. Since two light emitting regions with different wavelength regions are formed in one chip, the near-field image does not separate into individual constituent colors even after molding with resin, and both the far-field image and the near-field image are not separated. Light emission in a wide wavelength range can be obtained.

Although the widths of the semiconductor layers 11 and 12 are both about 150 μm in the above description, they may be different, for example, 100 μm and 200 μm.

(Embodiment 2) FIG. 3 is a sectional view showing a semiconductor light emitting device according to Embodiment 2 of the present invention.

In this semiconductor light emitting device, an n-GaAs buffer layer 201 is formed on an n-GaAs substrate 200. A semiconductor layer 21 having a light emitting region thereon,
22 and 23 are formed. The semiconductor layer 21 is the first embodiment.
The semiconductor layer 22 has the same structure as the semiconductor layer 11, the semiconductor layer 22 has the same structure as the semiconductor layer 12, and p-GaAs layers 206 and 211 are respectively formed as ohmic contact layers. The semiconductor layer 23 is n (Cl-doped) -Z.
nSSe (composition ratio of S and Se is selected to lattice match with GaAs) layer 212, p (N-doped) -Zn
It is composed of an SSe (a composition ratio of S and Se is selected so as to be lattice-matched with GaAs) layer 213, and p
A (N-doped) -ZnSe layer 214 is formed. In addition, the electrodes 2 are provided on the three semiconductor layers 21, 22 and 23, respectively.
15, 216, 217 are formed, and a common electrode 218 is formed on the substrate 200 side.

A method of manufacturing this semiconductor light emitting device will be described with reference to FIG.

The growth of each semiconductor layer can be carried out by a usual MBE method (molecular beam vapor deposition method).

First, as shown in FIG. 4A, Ga, A
The n-GaAs buffer layer 201 is formed on the n-GaAs substrate 200 at a substrate temperature of 600 ° C. by using molecular beams of s and Si.
To grow.

After that, the substrate temperature was lowered to 350 ° C.
As shown in (b), the region 21a having a width of about 150 μm on the substrate is irradiated with the excitation light. And Ga, Al, I
A region 21 is formed by using n, Be, Si, P and As molecular beams.
n- (Al _0.5 Ga _0.5 ) _0.5 In _0.5 P layer 20 on a
2, non-doped Ga _0.5 In _0.5 P active layer 203, p−
(Al _0.5 Ga _0.5 ) _0.5 In _0.5 P layer 204, p-Al
_{The 0.7} Ga _0.3 As layer 205 is grown to be the semiconductor layer 21.

Also in this embodiment, as in the first embodiment, the substrate temperature rises or the surface is electronically excited in the region irradiated with light, so that selective growth occurs.

Further, as shown in FIG. 4C, the width of the excitation light is reduced to about 60 μm for irradiation, and the p-GaAs layer 206 is grown on the irradiated portion.

Then, as shown in FIG. 4D, the region 22a is irradiated with excitation light, and n- (Al
_0.7 Ga _0.3 ) _0.5 In _0.5 P layer 207, non-doped (Al
_0.45 Ga _0.55 ) _0.5 In _0.5 P active layer 208, p- (Al
_0.7 Ga _0.3 ) _0.5 In _0.5 P layer 209, p-Al _0.7 Ga
_{The 0.3} As layer 210 is grown to form the semiconductor layer 22, and then the p-GaAs layer 211 is grown as shown in FIG.

Further, the substrate temperature was lowered to 200 ° C.
As shown in (f), the excitation light is irradiated onto the region 23a having a width of about 200 μm on the substrate. And Zn, S, Se,
Using a molecular beam of N ₂ and ZnCl ₂ , N ₂ which is a p-type dopant is excited by a high frequency heating coil to generate M as N ₂ radicals.
After being introduced into the BE chamber, n-Zn is formed on the region 23a.
The SSe layer 212 and the p-ZnSSe layer 213 are grown.
Furthermore, as shown in FIG. 4 (g), the width of the excitation light is 70 μm.
Irradiation is performed after reducing to m, and a p-ZnSe layer 214 is grown on the irradiated portion. After that, a semiconductor light emitting element is obtained in the same manner as in Example 1.

In the semiconductor light emitting device of this example, similarly to Example 1, the semiconductor layer 21 emitted red light and the semiconductor layer 22 emitted green light. The n-ZnSSe layer 212 and the p-ZnSSe layer 21 of the semiconductor layer 23 are also included.
The pn junction with 3 became a light emitting region, and blue light emission of λ = 460 nm was generated. Since this semiconductor light emitting element has a light emitting region for emitting light of the three primary colors of red, green and blue in one chip, full color display is possible. Further, since three light emitting regions that emit light with different wavelength regions are formed in one chip, the near field image does not separate into individual constituent colors even after molding with resin, and the far field image and near field image are not separated. It is possible to obtain light emission in a wide wavelength range in both visual field images.

(Embodiment 3) FIG. 5 is a sectional view showing a semiconductor light emitting device of Embodiment 3 of the present invention.

In this semiconductor light emitting device, semiconductor layers 31, 32 and 33 having a pn junction are formed. First,
n-GaAs buffer layer 3 on n-GaAs substrate 300
01 is formed. On top of that, n- (Al _0.5 Ga
_0.5 ) _0.5 In _0.5 P layer 302, undoped Ga _0.5 In
_0.5 P active layer 303, n- (Al _0.5 Ga _0.5 ) _0.5 In
_0.5 P layer 304, n-Al _0.7 Ga _0.3 As layer 30
5 is formed. On top of that, n- (Al _0.7 Ga _0.3 ), except on the portion of the semiconductor layer 31 that becomes the light emitting region.
_0.5 In _0.5 P layer 306, non-doped (Al _0.45 G
a _0.55 ) _0.5 In _0.5 P active layer 307, n- (Al _0.7 G
a _0.3 ) _0.5 In _0.5 P layer 308, n-Al _0.7 Ga _0.3 A
The s layer 309 is formed. On top of that, the semiconductor layer 32
Of the n-CdZnSS except on the light emitting region of
An e layer 310 and a p-CdZnSSe layer 311 are formed,
Further, a p-ZnSe layer 312 is formed. Here, the composition ratios of the CdZnSSe layers 310 and 311 are such that the lattice constant is equal to that of GaAs. And
In the portion of the semiconductor layer 31 that becomes the light emitting region, n-Al _0.7 G
a _0.3 As layer 305 to the non-doped Ga _0.5 In _0.5 P active layer 303, and in the light emitting region of the semiconductor layer 32 from the n-Al _0.7 Ga _0.3 As layer 309 non-doped (Al _0.45 Ga _0.55 ) _0.5. In _0.5 P active layer 3
Zn diffusion is performed to reach the p-type region 31
3 and 314. In addition, each semiconductor layer 31,
Electrodes 315, 316, and 317 are formed on 32 and 33, and a common electrode 318 is formed on the substrate 300 side.

A method of manufacturing this semiconductor light emitting device will be described with reference to FIG.

The growth of each semiconductor layer can be performed by a usual MBE method. Metal Cd is used as the molecular beam source of Cd, and the others can be the same as in Example 2.

First, as shown in FIG. 6A, n-Ga
N-GaAs on As substrate 300 at a substrate temperature of 600 ° C.
Buffer layer 301, n- (Al _0.5 Ga _0.5 ) _0.5 In _0.5
P layer 302, non-doped Ga _0.5 In _0.5 P active layer 30
_{3, n- (Al 0.5 Ga 0.5} ) 0. 5 In 0.5 P layer 304, n
-Al _0.7 Ga _0.3 As layer 305 is grown.

After that, the substrate temperature was lowered to 300 ° C.
As shown in (b), λ = 1 using an ArF excimer laser except on the portion of the semiconductor layer 31 which becomes the light emitting region.
Irradiation with 93 nm excitation light. Then, on the portion irradiated with _{n- (Al 0.7 Ga 0.3) 0.} 5 In 0.5 P layer 306, a non-doped _{(Al 0.45 Ga 0.55) 0.5 In} 0.5 P active layer 30
7, n- (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P layer 308, n
-Al _0.7 Ga _0.3 As layer 309 is grown.

Further, as shown in FIG. 6C, excitation light is radiated except on the portion of the semiconductor layer 33 which becomes the light emitting region, and the n-CdZnSSe layer 310, on the irradiated portion.
A p-CdZnSSe layer 311 is grown.

Further, as shown in FIG. 6D, the width of the excitation light is reduced and irradiated, and p-ZnSe is irradiated on the irradiated portion.
Growing layer 312.

Thereafter, as shown in FIG. 6E, Zn diffusion is performed to form p-type regions 313 and 314. After that, a semiconductor light emitting element is obtained in the same manner as in Example 1.

In the semiconductor light emitting device of this embodiment, red, green and blue lights are emitted in the semiconductor layers 31, 32 and 33, respectively, as in the second embodiment. In addition, the semiconductor layer 3
By changing the injection current amount of 1, 32, 33,
Full-color display from red to blue is possible.

(Embodiment 4) FIG. 7 is a sectional view showing a semiconductor light emitting device according to Embodiment 4 of the present invention.

In this semiconductor light emitting device, an n-GaAs buffer layer 401 and an n-GaAs buffer layer 401 are provided on an n-GaAs substrate 400.
_A- (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P layer 402 is formed. Two active layers 403 and 404 are formed on it. The active layer 403 is non-doped Ga _0.5 In _0.5 P
Layer and active layer 404 are non-doped (Al _0.45 Ga _0.55 ).
_0.5 In _0.5 P layer, which emits red and green light, respectively. P- (Al _0.7 G
a _0.3 ) _0.5 In _0.5 P layer 405, p-Al _0.7 Ga _0.3 A
The s layer 406 is formed. Two electrodes 407 and 408 are formed in order to inject a current into each active layer, and a common electrode 409 is formed on the substrate 400 side.

A method of manufacturing this semiconductor light emitting device will be described with reference to FIG.

The growth of each semiconductor layer can be performed by a usual MOCVD method. The atomic source and the dopant material forming each semiconductor layer can be the same as those in the first embodiment.

First, as shown in FIG. 8A, n-Ga
On the As substrate 400, n-GaAs buffer layers 401, n
_A- (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P layer 402 is grown at a substrate temperature of 700 ° C.

Next, the substrate temperature is lowered to 400 ° C. to form an active layer 403 region 403 as shown in FIG. 8B.
A is irradiated with excitation light to grow a non-doped Ga _0.5 In _0.5 P active layer 403 on the region 403a.

After that, as shown in FIG. 8C, the region 404a to be the active layer 404 is irradiated with excitation light, and the region 4 is exposed.
Undoped (Al _0.45 Ga _0.55 ) _0.5 In on 04a
_{A 0.5} P active layer 404 is grown.

Then, the substrate temperature is raised to 700 ° C.,
As shown in FIG. 8D, p- (Al _0.7 G is formed on the entire surface of the substrate.
a _0.3 ) _0.5 In _0.5 P layer 405, p-Al _0.7 Ga _0.3 A
The s layer 406 is grown. After that, a semiconductor light emitting element is obtained in the same manner as in Example 1.

In the semiconductor light emitting device of this embodiment, as in the case of the first embodiment, the active layers 41 and 42 serve as light emitting regions, and emit red and green light, respectively. Also, the electrodes 407, 4
By adjusting the amount of current injected into 08, light emission in the wavelength region from red to green can be generated.

(Embodiment 5) FIG. 9 is a sectional view showing a semiconductor light emitting device according to Embodiment 5 of the present invention.

In this semiconductor light emitting device, semiconductor layers 51 and 52 having a light emitting region are formed on an n-InP substrate 500. The semiconductor layer 51 includes an n-InP layer 501, a non-doped Ga _0.23 In _0.77 P _0.5 As _0.5 active layer 502,
The p-InP layer 503 is formed, and the semiconductor layer 52 is n.
InP layer 504, undoped Ga _0.34 In _0.66 P _0.25 A
s _0.75 active layer 505 and p-InP layer 506. In addition, the two semiconductor layers 51 and 52 each have an electrode 5
07 and 508 are formed, and a common electrode 509 is formed on the substrate 500 side.

This semiconductor light emitting device is composed of TMG, TMI,
It can be manufactured in the same manner as in Example 1 using AsH ₃ and PH ₃ as an atom source.

The semiconductor light emitting device of this embodiment has the semiconductor layer 5
1 emits light having a center wavelength of about 1140 nm, and the semiconductor layer 52 emits light having a center wavelength of about 1300 nm. Further, by changing the amount of current injected into the semiconductor layers 51 and 52, continuous wavelength light emission can be generated between them.

(Embodiment 6) FIG. 10 is a sectional view showing a semiconductor light emitting device according to Embodiment 6 of the present invention.

This semiconductor light emitting device includes an n-GaP substrate
N-Al on 600_0.75In_0.25P buffer layer 601
Are formed. A semiconductor having a light emitting region thereon
Layers 61 and 62 are formed. The semiconductor layer 61 is n−
(Al_0.5Ga_0.5)_0.5In_0.5P layer 602, non-doped
Ga_0.5In_0.5P active layer 603, p- (Al_0.5G
a_0.5)_0.5In_0.5P layer 604, p-Al_0.7Ga_0.3A
The semiconductor layer 62 is made of n- (Al.
_0.7Ga_0.3)_0.5In_0.5P layer 606, undoped (Al
_{0. 45}Ga_0.55)_0.5In_0.5P active layer 607, p- (Al
_0.7Ga_0.3)_0.5In_0.5P layer 608, p-Al_0.7Ga
_0.3It is composed of an As layer 609. Also two semiconductors
Electrodes 610 and 611 are formed on layers 61 and 62, respectively.
The common electrode 612 is formed on the substrate 600 side under the semiconductor layer.
It is formed excluding the part corresponding to.

This semiconductor light emitting device can be manufactured in the same manner as in Example 1.

In this embodiment, a GaP substrate and AlG are used.
Since the AlInP buffer layer 601 having a lattice constant intermediate to that of the aInP semiconductor layer and having a large band gap is provided, it is possible to grow a semiconductor layer lattice-mismatched with the substrate with a low dislocation density using a GaP substrate. .

In the semiconductor light emitting device of this example, red and green light emission was generated in the semiconductor layers 61 and 62, as in Example 1. Further, since the n-GaP substrate is used and the n-Al _0.75 In _0.25 P layer is used as the buffer layer,
The emitted light is also transmitted to the substrate side and is emitted to the outside through a portion where the electrode 612 is not formed. Therefore, the luminous efficiency to the outside is increased.

In each of the above examples, the light emitting region that emits red light, green light or blue light is used, but the present invention is not limited to this, and the semiconductor layer is formed by changing the composition ratio of AlGaInP and CdZnSSe. By growing, various light emission such as orange and blue green can be generated. When an InP substrate is used, Ga
By changing the composition ratio of InPAs, wavelength 15
Light emission can be generated up to a long wavelength of about 50 nm, and a semiconductor light emitting element with a wide wavelength range is possible. When a GaP substrate is used, the buffer layer structure is Al _X In _1-X P
By setting (X = 1 → 0.5), a semiconductor layer lattice-matched to the GaP substrate to a semiconductor layer lattice-matched to the GaAs substrate can be graded and grown. Further, the light emitting region can have various combinations of structures such as a double hetero structure and a single hetero structure. Further, as a method for growing the semiconductor layer, any method can be used as long as it involves photoexcitation, and for example, A
The LE (atomic layer epitaxy) method and the MONBE (organic metal molecular beam epitaxy) method are also possible.

[0072]

As is apparent from the above description, according to the present invention, since a plurality of light emitting regions can be formed in one chip, the near-field image is not separated into individual constituent colors. It is possible to obtain light emission in a wide wavelength range for both the far-field image and the near-field image. Therefore, a full color display can be realized using this semiconductor light emitting device.

[Brief description of drawings]

FIG. 1 is a sectional view showing a semiconductor light emitting device of Example 1 of the present invention.

FIG. 2 is a diagram showing a manufacturing process of the semiconductor light emitting device according to the first embodiment of the present invention.

FIG. 3 is a sectional view showing a semiconductor light emitting device of Example 2 of the present invention.

FIG. 4 is a diagram showing a manufacturing process of the semiconductor light emitting device according to the second embodiment of the present invention.

FIG. 5 is a sectional view showing a semiconductor light emitting device of Example 3 of the present invention.

FIG. 6 is a view showing a manufacturing process of the semiconductor light emitting device according to the third embodiment of the present invention.

FIG. 7 is a sectional view showing a semiconductor light emitting device of Example 4 of the present invention.

FIG. 8 is a diagram showing a manufacturing process of a semiconductor light emitting device according to a fourth embodiment of the present invention.

FIG. 9 is a sectional view showing a semiconductor light emitting device of Example 5 of the present invention.

FIG. 10 is a sectional view showing a semiconductor light emitting device of Example 6 of the present invention.

FIG. 11 is a schematic configuration diagram showing a conventional integrated lamp.

FIG. 12 is a diagram showing a configuration of a semiconductor light emitting element.

[Explanation of symbols]

100, 200, 300, 400, 500, 600,
Substrate 101, 201, 301, 401, 601 Buffer layer 103, 107, 203, 208, 303, 307, 4
03, 404, 502, 505, 603, 607 Active layers 11, 12, 21, 22, 23, 31, 32, 33, 5
Semiconductor layer having light emitting regions 1, 52, 61, 62

Claims (9)

[Claims] 1. A plurality of semiconductor layers each having a light emitting region are laminated on a semiconductor substrate, or a plurality of semiconductor layers are arranged in parallel along the surface of the substrate, and each light emitting region emits light with a different emission wavelength region. A semiconductor light emitting device having a structured structure. 2. The semiconductor substrate is made of GaAs, and each semiconductor layer has Al, Ga, In, Zn as its constituent elements.
And Cd and at least one of P, As, S and Se, and each light emitting region has a different constituent element or a different composition ratio of the same constituent element. Claim 1 consisting of different materials
The semiconductor light-emitting device according to. 3. The semiconductor substrate is made of InP, each semiconductor layer contains at least one of Ga and In and at least one of P and As as constituent elements, and each light emitting region has each constituent element. The semiconductor light-emitting device according to claim 1, wherein the semiconductor light-emitting device is made of a material having different composition ratios of the same constituent elements. 4. The semiconductor substrate is made of GaP, and each semiconductor layer contains at least one of Al, Ga and In as constituent elements and at least one of P and As, and each light emitting region has The semiconductor light emitting element according to claim 1, wherein the semiconductor light emitting element is made of a material having different constituent elements or different composition ratios of the same constituent element. 5. A plurality of semiconductor layers, each having a light emitting region, are formed on a semiconductor substrate such that the emission wavelength regions of the respective light emitting regions are different from each other, and the upper semiconductor layer of the two upper and lower semiconductor layers is a lower layer. In a method for manufacturing a semiconductor light emitting device, which is formed by partially exposing an upper surface of a side semiconductor layer, a step of forming a semiconductor layer including a light emitting region on the semiconductor substrate, and a phase including a semiconductor layer directly above the substrate. A step of forming one or more semiconductor layers on the semiconductor layer directly above the substrate by irradiating light to excite the upper semiconductor layer forming portion on the upper surface of the lower semiconductor layer of the two semiconductor layers which are vertically arranged; A method for manufacturing a semiconductor light emitting device, comprising: 6. A semiconductor light emitting device in which a plurality of semiconductor layers each having a light emitting region have different emission wavelength regions of the respective light emitting regions on a semiconductor substrate, and are arranged in parallel along the surface of the substrate. 2. The method for manufacturing a semiconductor light emitting device, which comprises the step of irradiating light on each semiconductor layer forming portion on the upper surface of the semiconductor substrate to excite it, and forming each semiconductor layer on the excited portion. 7. A GaAs substrate is used as the semiconductor substrate, and each semiconductor layer is made of Al, Ga, In, Zn and Cd.
At least one of P, As, S, and Se is used, and each light emitting region is formed with different constituent elements or different composition ratios of the same constituent element. Item 7. A method for manufacturing a semiconductor light emitting device according to item 5 or 6. 8. An InP substrate is used as the semiconductor substrate, each semiconductor layer is formed by using at least one of Ga and In, and at least one of P and As, and each light emitting region is formed of its constituent elements. 7. The method for manufacturing a semiconductor light emitting device according to claim 5, wherein the semiconductor light emitting device is formed with different composition ratios of the same constituent elements. 9. A GaP substrate is used as the semiconductor substrate, each semiconductor layer is formed using at least one of Al, Ga and In, and at least one of P and As, and each light emitting region is formed. 7. The method for manufacturing a semiconductor light emitting device according to claim 5, wherein the elements are made different or the composition ratio of the same constituent element is made different.