JPH06158038A - Organic electroluminescent element - Google Patents

Organic electroluminescent element

Info

Publication number
JPH06158038A
JPH06158038A JP4307060A JP30706092A JPH06158038A JP H06158038 A JPH06158038 A JP H06158038A JP 4307060 A JP4307060 A JP 4307060A JP 30706092 A JP30706092 A JP 30706092A JP H06158038 A JPH06158038 A JP H06158038A
Authority
JP
Japan
Prior art keywords
organic
transporting
energy gap
light emitting
emitting layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4307060A
Other languages
Japanese (ja)
Inventor
Atsushi Funaki
淳 舟木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Electronic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Electronic Corp filed Critical Pioneer Electronic Corp
Priority to JP4307060A priority Critical patent/JPH06158038A/en
Publication of JPH06158038A publication Critical patent/JPH06158038A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)

Abstract

PURPOSE:To obtain the subject element which effectively carries out the injection, recombination, and emission of electrons and positive holes and provides a highluminance emission at a low voltage applied by sequentially laminating an anode, specific luminescent layers, and a cathode. CONSTITUTION:This element is obtd. by sequentially laminating an anode, the first luminescent layer which comprises the first org. host substance (e.g. a compd. of formula I) capable of transporting positive holes and the first org. guest substance [e. g. a compd. of formula II (wherein R5 and R6 are each H, alkyl aryl, etc.)] having a smaller energy gap between the first oxidation potential and the first reduction potential (measured by cyclic voltammetry) than the energy gap of the first host substance, the second luminescent layer which comprises the second org. host substance (e.g. a compd. of formula III) capable of transporting electrons and the second guest substance having a smaller energy gap between the first oxidation potential and the first reduction potential (measured as above) than the energy gap of the second host substance, and a cathode.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、電流の注入によって発
光する物質のエレクトロルミネッセンスを利用して、か
かる物質を層状に形成した発光層を備えた発光素子に関
し、特に発光層が有機化合物を発光体として構成される
有機エレクトロルミネッセンス素子(以下、有機EL素
子という)に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting device provided with a light emitting layer in which such a substance is formed into a layer by utilizing the electroluminescence of a substance which emits light when an electric current is injected, and particularly the light emitting layer emits an organic compound. The present invention relates to an organic electroluminescence element configured as a body (hereinafter referred to as an organic EL element).

【0002】[0002]

【従来の技術】有機EL素子として、図1に示すよう
に、金属陰極1と透明陽極2との間に、有機質発光層3
及び有機質正孔輸送層4が配された2層構造のものや、
図2に示すように、金属陰極1と透明陽極2との間に有
機質電子輸送層5、有機質発光層3及び有機質正孔輸送
層4が積層された3層構造のものが知られている(特開
平2−216790号公報)。
2. Description of the Related Art As an organic EL device, as shown in FIG. 1, an organic light emitting layer 3 is provided between a metal cathode 1 and a transparent anode 2.
And a two-layer structure in which the organic hole transport layer 4 is arranged,
As shown in FIG. 2, a three-layer structure in which an organic electron transport layer 5, an organic light emitting layer 3, and an organic hole transport layer 4 are laminated between a metal cathode 1 and a transparent anode 2 is known ( JP-A-2-216790).

【0003】発光層3には、電子を輸送する能力を有し
かつ発光能力がある(量子収率が高い)有機物質が用い
られる。正孔輸送層4は陽極から正孔を輸送する機能と
電子をブロックする機能とを有し、電子輸送層5は陰極
から電子を輸送する機能を有している。これら有機EL
素子において、透明陽極2の外側にはガラス基板6が配
されており、金属陰極1から注入された電子と透明陽極
2から発光層3へ注入された正孔との再結合によって励
起子が生じ、この励起子が放射失活する過程で光を放
ち、この光が透明陽極2及びガラス基板6を介して外部
に放出される。
For the light emitting layer 3, an organic material having an electron transporting ability and a light emitting ability (high quantum yield) is used. The hole transport layer 4 has a function of transporting holes from the anode and a function of blocking electrons, and the electron transport layer 5 has a function of transporting electrons from the cathode. These organic EL
In the device, a glass substrate 6 is arranged outside the transparent anode 2, and excitons are generated by recombination of electrons injected from the metal cathode 1 and holes injected from the transparent anode 2 to the light emitting layer 3. The excitons emit light in the process of radiation deactivation, and the light is emitted to the outside through the transparent anode 2 and the glass substrate 6.

【0004】従来の図1に示す2層構造の有機EL素子
において、特開昭63−264692号、特開平2−6
6873号などに開示されているように、発光層3中の
みにゲスト物質を分散させた、いわゆるゲストホスト型
EL素子がある。このゲストホスト型発光層は、少なく
とも電子を輸送する能力を有するホスト物質と、再結合
に応じて発光する能力のある少量の有機ゲスト物質と、
から構成される。
In the conventional organic EL device having a two-layer structure shown in FIG. 1, Japanese Patent Laid-Open Nos. 63-264692 and 2-6 are available.
There is a so-called guest-host type EL element in which a guest substance is dispersed only in the light emitting layer 3 as disclosed in No. 6873 and the like. This guest-host type light emitting layer, at least a host material having the ability to transport electrons, and a small amount of organic guest material capable of emitting light in response to recombination,
Composed of.

【0005】陽極2には、インジウムすず酸化物(以
下、ITOという)、すず酸化物等の仕事関数が大き
く、発光を外部に放出させる透明導電性材料が用いられ
る。また、陰極1には、アルミニウム(Al)、マグネ
シウム(Mg)、インジウム(In)、銀(Ag)の単
体金属又はこれらのAl−Mg,Ag−Mg等の合金で
あって仕事関数が小さなものが用いられる。
For the anode 2, a transparent conductive material having a large work function, such as indium tin oxide (hereinafter referred to as ITO) and tin oxide, which emits light emission to the outside is used. The cathode 1 is a single metal of aluminum (Al), magnesium (Mg), indium (In), silver (Ag) or an alloy of these Al-Mg, Ag-Mg, etc., and has a small work function. Is used.

【0006】[0006]

【発明が解決しようとする課題】しかしながら、2層構
造の有機EL素子における発光層、並びに3層構造の有
機EL素子の電子輸送層は、高い電子輸送能力がないと
用いることができず、効率良く低電圧で発光させるため
には各々正孔又は電子輸送能力の高い各機能層の材料の
組合せが必要で、それらの選択の幅が狭く、十分な発光
させる組合せが望まれている。
However, the light emitting layer in the organic EL device having the two-layer structure and the electron transporting layer in the organic EL device having the three-layer structure cannot be used unless they have high electron transporting ability, and the efficiency is high. In order to emit light at a low voltage well, it is necessary to combine the materials of the functional layers each having a high hole or electron transporting ability, and the selection range thereof is narrow, and a combination that allows sufficient light emission is desired.

【0007】よって、本発明の目的は、効率的に電子及
び正孔の注入再結合発光を行うような有機EL素子を提
供することにある。
Therefore, it is an object of the present invention to provide an organic EL device capable of efficiently injecting electrons and holes and performing recombination emission.

【0008】[0008]

【課題を解決するための手段】本発明の有機EL素子
は、陽極、正孔を輸送する能力のある第1有機ホスト物
質とサイクリックボルタンメトリー測定において得られ
る第1酸化電位及び第1還元電位のエネルギーギャップ
が前記第1有機ホスト物質のエネルギーギャップよりも
小さい第1有機ゲスト物質とからなる第1発光層、電子
を輸送する能力のある第2有機ホスト物質とサイクリッ
クボルタンメトリー測定において得られる第1酸化電位
及び第1還元電位のエネルギーギャップが前記第2有機
ホスト物質のエネルギーギャップよりも小さい第2有機
ゲスト物質とからなる第2発光層、並びに陰極が順に積
層されてなる。すなわち、本発明の有機EL素子は、陽
極、正孔輸送性のホスト物質からなる正孔輸送層、電子
輸送性のホスト物質からなる電子輸送層及び陰極が順に
積層されてなる有機EL素子であって、発光に寄与する
ゲスト物質を正孔輸送層及び電子輸送層のそれぞれに分
散させこれらを正孔輸送性発光層及び電子輸送性発光層
としたことを特徴とする。
The organic EL device of the present invention comprises an anode, a first organic host material capable of transporting holes and a first oxidation potential and a first reduction potential obtained by cyclic voltammetry measurement. A first light emitting layer comprising a first organic guest material having an energy gap smaller than that of the first organic host material, a second organic host material capable of transporting electrons, and a first obtained in cyclic voltammetry measurement. A second light emitting layer including a second organic guest material having an energy gap between the oxidation potential and the first reduction potential smaller than the energy gap of the second organic host material, and a cathode are sequentially stacked. That is, the organic EL element of the present invention is an organic EL element in which an anode, a hole-transporting layer made of a hole-transporting host material, an electron-transporting layer made of an electron-transporting host material, and a cathode are sequentially stacked. And a guest substance that contributes to light emission is dispersed in each of the hole transporting layer and the electron transporting layer to form a hole transporting light emitting layer and an electron transporting light emitting layer.

【0009】[0009]

【作用】本発明によれば、電極間の有機機能層全体にゲ
スト物質を分散させることにより、電子及び正孔の注入
再結合発光機会が増加される。
According to the present invention, by dispersing the guest material throughout the organic functional layer between the electrodes, the chances of injection and recombination emission of electrons and holes are increased.

【0010】[0010]

【実施例】以下に本発明による実施例を図を参照しつつ
説明する。本実施例の有機EL素子は、図3に示すよう
に、ガラス基板6上に陽極2、有機化合物からなる正孔
輸送性発光層4a、有機化合物からなる電子輸送性発光
層3a及び金属陰極1が順に積層された構造を有してい
る。さらに、図4に示すように、ガラス基板6上に上記
構成に加えて、有機化合物からなる電子輸送層5を発光
層3及び金属陰極1間に積層した構造を有しているもの
でもよい。
Embodiments of the present invention will be described below with reference to the drawings. As shown in FIG. 3, the organic EL device of this example has an anode 2, a hole transporting light emitting layer 4a made of an organic compound, an electron transporting light emitting layer 3a made of an organic compound, and a metal cathode 1 on a glass substrate 6. Has a structure in which layers are sequentially stacked. Further, as shown in FIG. 4, in addition to the above configuration, an electron transport layer 5 made of an organic compound may be laminated between the light emitting layer 3 and the metal cathode 1 on the glass substrate 6.

【0011】上記の素子構造における正孔輸送性発光層
4aのホスト物質として使用可能な正孔輸送化合物は、
少なくとも1つの芳香族環を結合する第3級アミンを含
む化合物であり、例えば、化学式1に示すN,N´−ジ
フェニル−N,N´−ビス(3−メチルフェニル)−
1,1´−ビフェニル−4,4´−ジアミン(以下、T
PDという)が好ましく用いられ、他に化学式2及び3
に示すCTM(CarrierTransporting Materials )とし
て知られる化合物を単独、もしくは混合物として用い得
る。
The hole transporting compound which can be used as the host material of the hole transporting light emitting layer 4a in the above device structure is
A compound containing a tertiary amine that binds at least one aromatic ring, for example, N, N′-diphenyl-N, N′-bis (3-methylphenyl) -in formula 1
1,1'-biphenyl-4,4'-diamine (hereinafter T
PD) is preferably used, and other chemical formulas 2 and 3 are also used.
The compound known as CTM (Carrier Transporting Materials) shown in 1 can be used alone or as a mixture.

【0012】[0012]

【化1】 [Chemical 1]

【0013】[0013]

【化2】 [Chemical 2]

【0014】[0014]

【化3】 [Chemical 3]

【0015】このホスト物質は、CV(サイクリックボ
ルタンメトリ)測定において酸化側及び還元側共に電位
の絶対値が大きいものが用いられる。正孔輸送性発光層
4aのゲスト物質には、CV測定における酸化側及び還
元側共に電位の絶対値がホスト物質の絶対値より小さい
もの、例えば、化学式4に示すピリミドピリミジン誘導
体が用いられる。
As the host substance, one having a large absolute value of potential on both the oxidation side and the reduction side in CV (cyclic voltammetry) measurement is used. As the guest substance of the hole-transporting light-emitting layer 4a, one having an absolute potential value smaller than that of the host substance on both the oxidation side and the reduction side in CV measurement, for example, a pyrimidopyrimidine derivative represented by Chemical Formula 4 is used.

【0016】[0016]

【化4】 [Chemical 4]

【0017】{化学式4中、R5並びにR6は、各々独立
して水素原子、アルキル基、アリール基、又は、R5
びR6が一緒になってシクロアルキル基若しくは複素環
基を完成させる原子若しくは基を表わす} 具体的ピリミドピリミジン誘導体には、蛍光分析試薬に
用いられ化学式5で示されるデピリダモール(Dipyrida
mole)があり、これ(2,6-bis(diethanolamino)-4,8-di
peridino Pyrimido[5,4-d]Pyrimidine )は、ピリミド
[5,4−d]ピリミジン骨格の2,6位にエタノールア
ミノ基(ethanolamino)を有し、4,8位にピペリジノ基(pe
ridino)を有している。
{In the chemical formula 4, R 5 and R 6 are each independently a hydrogen atom, an alkyl group, an aryl group, or R 5 and R 6 are taken together to complete a cycloalkyl group or a heterocyclic group. Representing an atom or a group} Specific pyrimidopyrimidine derivatives include depyridamole (Dipyrida) represented by the chemical formula 5 used as a fluorometric reagent.
mole) and this (2,6-bis (diethanolamino) -4,8-di
peridino Pyrimido [5,4-d] Pyrimidine) has an ethanolamino group at the 2,6 position of the pyrimido [5,4-d] pyrimidine skeleton and a piperidino group (pe
ridino).

【0018】[0018]

【化5】 [Chemical 5]

【0019】ゲスト物質に用いれらる他のピリミドピリ
ミジン誘導体には、例えば、トリ(p-メトキシアニリ
ノ)ピリミド[5,4−d]ピリミジン{2,4,8−tri(p
-methoxyanlino) Pyrimido[5,4-d]Pyrimidine}、2,4,
6,8−テトラモルホリノピリミド[5,4−d]ピリミ
ジン{2,4,6,8−tetramorpholino Pyrimido[5,4-d]Pyri
midine}、2,4,6,8−テトラアニリノピリミド[5,4
−d]ピリミジン{2,4,6,8−tetraanilino Pyrimido
[5,4-d]Pyrimidine}、2,4,6,8−テトラ(p-メトキシア
ニリノ)ピリミド[5,4−d]ピリミジン{2,4,6,8
−tetra(p-methoxyanlino) Pyrimido[5,4-d]Pyrimidin
e}、2,4,6,8−テトラベンジルアミノピリミド[5,4
−d]ピリミジン{2,4,6,8−tetrabenzylamino Pyrimi
do[5,4-d]Pyrimidine}、2,4,8−トリモルホリノアミノ
ピリミド[5,4−d]ピリミジン{2,4,8−trimorpho
lino Pyrimido[5,4-d]Pyrimidine}、2,4,8−トリピロ
ーリジノピリミド[5,4−d]ピリミジン{2,4,8−t
ripyrrolidino Pyrimido[5,4-d]Pyrimidine}、2,4,8−
テトラピペリジノピリミド[5,4−d]ピリミジン
{2,4,6,8−tetrapiperidino Pyrimido[5,4-d]Pyrimidi
ne}、及び2,4,8−テトラチオモルホリノピリミド
[5,4−d]ピリミジン{2,4,6,8−tetrathiomorpho
linoPyrimido[5,4-d]Pyrimidine}などがある。
Other pyrimidopyrimidine derivatives used as guest substances include, for example, tri (p-methoxyanilino) pyrimido [5,4-d] pyrimidine {2,4,8-tri (p
-Methoxyanlino) Pyrimido [5,4-d] Pyrimidine}, 2,4,
6,8-Tetramorpholinopyrimido [5,4-d] pyrimidine {2,4,6,8-tetramorpholino Pyrimido [5,4-d] Pyri
midine}, 2,4,6,8-tetraanilinopyrimide [5,4
-D] pyrimidine {2,4,6,8-tetraanilino Pyrimido
[5,4-d] Pyrimidine}, 2,4,6,8-tetra (p-methoxyanilino) pyrimido [5,4-d] pyrimidine {2,4,6,8
− Tetra (p-methoxyanlino) Pyrimido [5,4-d] Pyrimidin
e}, 2,4,6,8-tetrabenzylaminopyrimide [5,4
-D] pyrimidine {2,4,6,8-tetrabenzylamino Pyrimi
do [5,4-d] Pyrimidine}, 2,4,8-trimorpholinoaminopyrimido [5,4-d] pyrimidine {2,4,8-trimorpho
lino Pyrimido [5,4-d] Pyrimidine}, 2,4,8-tripyrrolidinopyrimidine [5,4-d] pyrimidine {2,4,8-t
ripyrrolidino Pyrimido [5,4-d] Pyrimidine}, 2,4,8−
Tetrapiperidino pyrimido [5,4-d] pyrimidine {2,4,6,8-tetrapiperidino Pyrimido [5,4-d] Pyrimidi
ne} and 2,4,8-tetrathiomorpholinopyrimido [5,4-d] pyrimidine {2,4,6,8-tetrathiomorpho
linoPyrimido [5,4-d] Pyrimidine}.

【0020】ゲスト物質の励起波長スペクトル分布とホ
スト物質の蛍光波長スペクトル分布との重なり部分が大
きいほど効率良く発光する。ゲスト物質は、蛍光の量子
収率の高い蛍光色素から選び、ホスト物質の発光層内に
おいて0.01wt.%ないし10wt.%の濃度で含
有されていることが好ましい。低印加電圧で高輝度の発
光が得られるからである。
The larger the overlap between the excitation wavelength spectrum distribution of the guest substance and the fluorescence wavelength spectrum distribution of the host substance, the more efficiently the light emission occurs. The guest substance is selected from fluorescent dyes having a high fluorescence quantum yield, and 0.01 wt. % To 10 wt. It is preferably contained at a concentration of%. This is because light emission with high brightness can be obtained with a low applied voltage.

【0021】上の素子構造において電子輸送性発光層3
aのホスト物質として使用可能な化合物は、上記正孔輸
送性化合物よりもHOMO(highest occupied molecul
ar orbital:最高被占分子軌道)あるいはLUMO(lo
west unoccupied molecularorbital:最低空分子軌道)
のエネルギーの大きな蛍光物質であり、例えば化学式
6,7及び8に示すAlq3{tris(8-hydroxyquinolin
e)aluminium}や、TPB{1,1,4,4-tetraphenyl-1,3-b
utasiene}や、t−Bu−PBD{2-(4´-tert-butylp
henyl)-5-(4´´-biphenyl)-1,3,4-oxadiazole}などが
ある。これらは、3層構造の素子とした場合の有機電子
輸送層5としても用いられ得るものである。
In the above device structure, the electron transporting light emitting layer 3
The compound that can be used as the host substance of a is a HOMO (highest occupied molecule) compound than the above hole transporting compound.
ar orbital: highest occupied molecular orbital or LUMO (lo
west unoccupied molecular orbital: lowest unoccupied molecular orbital)
Is a fluorescent substance having a large energy of, for example, Alq 3 {tris (8-hydroxyquinolin
e) aluminium} and TPB {1,1,4,4-tetraphenyl-1,3-b
utasiene} or t-Bu-PBD {2- (4'-tert-butylp
henyl) -5- (4 ″ -biphenyl) -1,3,4-oxadiazole} and the like. These can also be used as the organic electron transport layer 5 in the case of a device having a three-layer structure.

【0022】[0022]

【化6】 [Chemical 6]

【0023】[0023]

【化7】 [Chemical 7]

【0024】[0024]

【化8】 [Chemical 8]

【0025】電子輸送性発光層3aの発光体として用い
るゲスト物質は非常に強い蛍光を放ち、CV測定におい
て得られる第1酸化電位と第1還元電位とのエネルギー
ギャップが電子輸送性発光層3aのホスト物質のエネル
ギーギャップよりも小さい化合物である。例えば、上記
のピリミドピリミジン誘導体が用いられる。具体的に、
所定の洗浄過程を行ったITO基板上に各薄膜を真空中
の連続蒸着(抵抗加熱法)により成膜し、有機EL素子
を作成した。まず、第1発光層すなわち正孔輸送性発光
層4aの主体となる正孔を輸送する能力のある第1有機
ホスト物質としてTPDを用い、第2有機ゲスト物質と
してCV測定において得られる第1酸化電位及び第1還
元電位のエネルギーギャップがTPDのエネルギーギャ
ップよりも小さいデピリダモールを用い共蒸着法により
成膜した。
The guest substance used as the light-emitting body of the electron-transporting light-emitting layer 3a emits extremely strong fluorescence, and the energy gap between the first oxidation potential and the first reduction potential obtained by CV measurement is that of the electron-transporting light-emitting layer 3a. It is a compound smaller than the energy gap of the host material. For example, the above pyrimidopyrimidine derivative is used. Specifically,
Each thin film was formed by continuous vapor deposition (resistance heating method) in a vacuum on an ITO substrate that had been subjected to a predetermined cleaning process, to produce an organic EL device. First, TPD is used as the first organic host material having a capability of transporting holes, which is the main component of the first light emitting layer, that is, the hole transporting light emitting layer 4a, and the first oxidation obtained as a second organic guest material in CV measurement. The film was formed by a co-evaporation method using depyridamole in which the energy gap between the potential and the first reduction potential was smaller than the energy gap of TPD.

【0026】つぎに、第2発光層すなわち電子輸送性発
光層3aの主体となる電子を輸送する能力のある第1有
機ホスト物質としてt−Bu−PBDを用い、第2有機
ゲスト物質としてCV測定において得られる第1酸化電
位及び第1還元電位のエネルギーギャップがt−Bu−
PBDのエネルギーギャップよりも小さいデピリダモー
ルを用い共蒸着法により成膜した。ゲスト物質としては
共通してデピリダモールを使用し、陰極はMgとA1を
共蒸着法により作製した。各有機機能層の膜厚はそれぞ
れ500オングストローム、陰極は2000オングスト
ロームとなるようにした。
Next, t-Bu-PBD is used as the first organic host material capable of transporting electrons, which is the main constituent of the second light emitting layer, that is, the electron transporting light emitting layer 3a, and CV measurement is performed as the second organic guest material. The energy gap between the first oxidation potential and the first reduction potential obtained in step is t-Bu-
A film was formed by a co-evaporation method using depyridamole having a smaller energy gap than PBD. Depyridamole was commonly used as the guest material, and Mg and A1 were prepared as the cathode by a co-evaporation method. The film thickness of each organic functional layer was 500 angstroms, and the cathode was 2000 angstroms.

【0027】比較例1として正孔輸送物質TPDにデピ
リダモールをゲスト物質として添加した正孔輸送性発光
層と、電子輸送物質t−Bu−PBDのみからなる電子
輸送層とを形成した以外は実施例と同様に形成した電子
輸送/ゲストホスト型発光層型EL素子を作製した。ま
た、比較例2として正孔輸送物質TPDのみからなる正
孔輸送層と、電子輸送物質t−Bu−PBDにデピリダ
モールをゲスト物質として添加した電子輸送性発光層と
を形成した以外は実施例と同様に形成したゲストホスト
型発光層/正孔輸送層型EL素子を作製した。
As Comparative Example 1, except that a hole-transporting light-emitting layer in which depyridamole was added as a guest substance to the hole-transporting substance TPD and an electron-transporting layer consisting only of the electron-transporting substance t-Bu-PBD were formed. An electron transport / guest host type light emitting layer type EL device formed in the same manner as in (1) was produced. Also, as Comparative Example 2, except that a hole transport layer composed only of the hole transport material TPD and an electron transport light emitting layer in which depyridamole was added as a guest substance to the electron transport material t-Bu-PBD were formed. A guest-host type light emitting layer / hole transport layer type EL device formed in the same manner was produced.

【0028】実施例並びに比較例1及び2は、500n
m前後がピークとなる電界発光(EL)スペクトルが得
られた。t−Bu−PBDの発光スペクトルピークは3
62nm、TPDの発光スペクトルピークは396nm
であり、デピリダモールの発光スペクトルピークは50
0nmであること及び発光スペクトル形状から、実施例
並びに比較例1及び2の電界発光スペクトルはデピリダ
モールのものであることが確認された。
Examples and Comparative Examples 1 and 2 are 500n
An electroluminescence (EL) spectrum having a peak around m was obtained. The emission spectrum peak of t-Bu-PBD is 3
62 nm, TPD emission spectrum peak is 396 nm
And the emission spectrum peak of depyridamole is 50.
From 0 nm and the shape of the emission spectrum, it was confirmed that the electroluminescence spectra of Example and Comparative Examples 1 and 2 were those of depyridamole.

【0029】また、表1にあるように、発光層である正
孔輸送層中にゲスト物質を分散させた構造(比較例1)
の一定電流値における発光効率は、電子輸送層中にゲス
ト物質を分散させた構造(比較例2)の発光効率よりも
高い値であるが、両層にゲスト物質を分散させた構造
(実施例)は更にそれよりも高い値を示した。陰極側か
ら電子の注入が行われ、電界方向に従い電子輸送層中を
電子は移動する。また、陽極側から正孔の注入が行わ
れ、電界方向に従い正孔輸送層中を正孔は移動する。正
孔輸送層と電子輸送層との界面付近で電子と正孔との再
結合が生じ、その結果、励起子を生成すると考えられる
が、これは電荷を持たない状態であると考えられるの
で、その移動に方向指向性は少なく、あらゆる方向に励
起子は拡散すると考えられる。比較例1及び2の如き従
来の構造では発光層中のみにゲスト物質を分散させてい
るので、電荷輸送層中へ移動した励起子は何らかの無放
射過程を経て、例えば電流或いは熱として消滅していた
と考えられる。しかし、実施例の如く両キャリア輸送層
のホスト層として使用することにより、両キャリアの再
結合発光機会が増加して従来無駄になっていた上記のよ
うなエネルギーが有効に使われるようになったと考えら
れる。
Further, as shown in Table 1, a structure in which a guest material is dispersed in a hole transport layer which is a light emitting layer (Comparative Example 1)
The luminous efficiency at a constant current value is higher than that of the structure in which the guest material is dispersed in the electron transport layer (Comparative Example 2), but the structure in which the guest material is dispersed in both layers (Example ) Also showed a higher value. Electrons are injected from the cathode side, and the electrons move in the electron transport layer according to the electric field direction. Further, holes are injected from the anode side, and the holes move in the hole transport layer according to the electric field direction. It is considered that recombination of electrons and holes occurs near the interface between the hole transport layer and the electron transport layer, and as a result, excitons are generated, which is considered to be a state having no charge. It is considered that the excitons diffuse in all directions because the movement has little directivity. In the conventional structure as in Comparative Examples 1 and 2, the guest substance is dispersed only in the light emitting layer, and thus the excitons that have moved into the charge transport layer are extinguished as some kind of current or heat through some non-radiative process. It is thought that However, by using it as the host layer of both carrier transport layers as in the example, the above-mentioned energy, which has been wasted in the past, is effectively used because the opportunities for recombination and emission of both carriers are increased. Conceivable.

【0030】[0030]

【表1】 *電流:I=1(mA/4mm2) **電流:I=3.6×10-4(A/4mm2),電圧:
V=14.75(V) ***電流:I=1.07×10-4(A/4mm2),電
圧:V=14(V) ****電流:I=1.32×10-4(A/4mm2),
電圧:V=15(V)
[Table 1] * Current: I = 1 (mA / 4mm 2 ) ** Current: I = 3.6 × 10 −4 (A / 4mm 2 ), Voltage:
V = 14.75 (V) *** Current: I = 1.07 × 10 −4 (A / 4 mm 2 ), Voltage: V = 14 (V) *** Current: I = 1.32 × 10 -4 (A / 4mm 2 ),
Voltage: V = 15 (V)

【0031】[0031]

【発明の効果】以上のように、本発明によれば、陽極、
正孔輸送性のホスト物質からなる正孔輸送層、電子輸送
性のホスト物質からなる電子輸送層及び陰極が順に積層
されてなる有機EL素子であって、発光に寄与するゲス
ト物質を正孔輸送層及び電子輸送層のそれぞれに分散さ
せこれらを正孔輸送性発光層及び電子輸送性発光層とし
たので、低印加電圧にて高輝度発光させ得る。かかる構
造によれば、機能層の組合せが一定であっても有機EL
素子をさらに高輝度発光させることが出来る。
As described above, according to the present invention, the anode,
An organic EL device comprising a hole transport layer made of a host substance having a hole transporting property, an electron transporting layer made of a host substance having an electron transporting property, and a cathode, which are sequentially stacked. The layer and the electron-transporting layer are dispersed in the respective layers to form the hole-transporting light-emitting layer and the electron-transporting light-emitting layer, so that high-luminance light emission can be performed at a low applied voltage. According to this structure, even if the combination of the functional layers is constant, the organic EL
The device can emit light with higher brightness.

【図面の簡単な説明】[Brief description of drawings]

【図1】2層構造の有機EL素子を示す構造図である。FIG. 1 is a structural diagram showing an organic EL device having a two-layer structure.

【図2】3層構造の有機EL素子を示す構造図である。FIG. 2 is a structural diagram showing an organic EL device having a three-layer structure.

【図3】本発明による実施例の2層構造の有機EL素子
を示す構造図である。
FIG. 3 is a structural diagram showing an organic EL device having a two-layer structure according to an example of the present invention.

【図4】本発明による実施例の3層構造の有機EL素子
を示す構造図である。
FIG. 4 is a structural diagram showing an organic EL device having a three-layer structure according to an example of the present invention.

【符号の説明】[Explanation of symbols]

1 陰極 2 陽極 3a 電子輸送性発光層 4a 正孔輸送性発光層 5 電子輸送層 6 ガラス基板 DESCRIPTION OF SYMBOLS 1 Cathode 2 Anode 3a Electron transporting light emitting layer 4a Hole transporting light emitting layer 5 Electron transporting layer 6 Glass substrate

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 陽極、 正孔を輸送する能力のある第1有機ホスト物質と、サイ
クリックボルタンメトリー測定において得られる第1酸
化電位及び第1還元電位のエネルギーギャップが前記第
1有機ホスト物質のエネルギーギャップよりも小さい第
1有機ゲスト物質とからなる第1発光層、 電子を輸送する能力のある第2有機ホスト物質と、サイ
クリックボルタンメトリー測定において得られる第1酸
化電位及び第1還元電位のエネルギーギャップが前記第
2有機ホスト物質のエネルギーギャップよりも小さい第
2有機ゲスト物質とからなる第2発光層、並びに陰極が
順に積層されてなることを特徴とする有機エレクトロル
ミネッセンス素子。
1. An anode, a first organic host material capable of transporting holes, and an energy gap of a first oxidation potential and a first reduction potential obtained by cyclic voltammetry measurement, the energy gap of the first organic host material. An energy gap between a first light emitting layer composed of a first organic guest material smaller than the gap, a second organic host material capable of transporting electrons, and a first oxidation potential and a first reduction potential obtained in cyclic voltammetry measurement. An organic electroluminescent device comprising: a second light emitting layer, which is composed of a second organic guest material having a smaller energy gap than the second organic host material, and a cathode, which are sequentially stacked.
【請求項2】 有機化合物からなる電子輸送層を前記第
2発光層及び前記陰極の間に設けたことを特徴とする請
求項1記載の有機エレクトロルミネッセンス素子。
2. The organic electroluminescence device according to claim 1, wherein an electron transport layer made of an organic compound is provided between the second light emitting layer and the cathode.
JP4307060A 1992-11-17 1992-11-17 Organic electroluminescent element Pending JPH06158038A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4307060A JPH06158038A (en) 1992-11-17 1992-11-17 Organic electroluminescent element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4307060A JPH06158038A (en) 1992-11-17 1992-11-17 Organic electroluminescent element

Publications (1)

Publication Number Publication Date
JPH06158038A true JPH06158038A (en) 1994-06-07

Family

ID=17964564

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4307060A Pending JPH06158038A (en) 1992-11-17 1992-11-17 Organic electroluminescent element

Country Status (1)

Country Link
JP (1) JPH06158038A (en)

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0818943A3 (en) * 1996-07-09 1998-07-15 Sony Corporation Electroluminescent device
JPH1195265A (en) * 1997-09-17 1999-04-09 Chemiprokasei Kaisha Ltd Electron transfer type laminated film or hall transfer type laminated film, electrochromic element using the same and organic electrochromic luminescent element
US6010796A (en) * 1996-07-09 2000-01-04 Sony Corporation Electroluminescent device
US6447934B1 (en) 1998-10-09 2002-09-10 Denso Corporation Organic electroluminescent panel
US6528188B1 (en) 1999-09-16 2003-03-04 Denso Corporation Organic EL element for multi-color emission
WO2005009088A1 (en) * 2003-07-23 2005-01-27 Konica Minolta Holdings, Inc. Organic electroluminescent device, illuminating device, and display
US7244516B1 (en) 2003-05-29 2007-07-17 Sony Corporation Organic electroluminescence device
EP1930969A2 (en) 2006-12-04 2008-06-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
JP2008543102A (en) * 2005-06-10 2008-11-27 トムソン ライセンシング Organic light-emitting diode with two or less layers of different organic materials
WO2009047899A1 (en) * 2007-10-12 2009-04-16 Panasonic Corporation Light emitting element and display device
JP2009081447A (en) * 1996-08-19 2009-04-16 Tdk Corp Organic el element
WO2009057317A1 (en) * 2007-11-01 2009-05-07 Panasonic Corporation Light-emitting device and display device
WO2009116259A1 (en) * 2008-03-17 2009-09-24 パナソニック株式会社 Light-emitting device
US7649211B2 (en) 2006-06-01 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element
US7732811B2 (en) 2006-12-04 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP2010192431A (en) * 2009-01-21 2010-09-02 Semiconductor Energy Lab Co Ltd Light emitting element, light emitting device, and electronic equipment
WO2011024346A1 (en) * 2009-08-24 2011-03-03 シャープ株式会社 Organic electroluminescent element, organic electroluminescent display device, and organic electroluminescent illuminating device
US8040047B2 (en) 2007-10-19 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8053980B2 (en) 2007-03-23 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
US8278649B2 (en) 2008-03-18 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
US8362466B2 (en) 2008-12-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US9192017B2 (en) 2008-03-18 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0818943A3 (en) * 1996-07-09 1998-07-15 Sony Corporation Electroluminescent device
US6010796A (en) * 1996-07-09 2000-01-04 Sony Corporation Electroluminescent device
JP2009081447A (en) * 1996-08-19 2009-04-16 Tdk Corp Organic el element
JPH1195265A (en) * 1997-09-17 1999-04-09 Chemiprokasei Kaisha Ltd Electron transfer type laminated film or hall transfer type laminated film, electrochromic element using the same and organic electrochromic luminescent element
US6447934B1 (en) 1998-10-09 2002-09-10 Denso Corporation Organic electroluminescent panel
US6528188B1 (en) 1999-09-16 2003-03-04 Denso Corporation Organic EL element for multi-color emission
US7244516B1 (en) 2003-05-29 2007-07-17 Sony Corporation Organic electroluminescence device
WO2005009088A1 (en) * 2003-07-23 2005-01-27 Konica Minolta Holdings, Inc. Organic electroluminescent device, illuminating device, and display
JP2008543102A (en) * 2005-06-10 2008-11-27 トムソン ライセンシング Organic light-emitting diode with two or less layers of different organic materials
US8395313B2 (en) 2005-06-10 2013-03-12 Thomson Licensing Light-emitting organic diode comprising not more than two layers of different organic materials
US7649211B2 (en) 2006-06-01 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element
US8860019B2 (en) 2006-06-01 2014-10-14 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device comprising light-emitting layer including two layers
US8410492B2 (en) 2006-06-01 2013-04-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and an electronic device, which include two layers including same light-emitting organic compound
US8076676B2 (en) 2006-06-01 2011-12-13 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and an electronic device which include two layers including the same light-emitting organic compound
EP1930969A2 (en) 2006-12-04 2008-06-11 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US9397308B2 (en) 2006-12-04 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Light emitting element, light emitting device, and electronic device
US8916857B2 (en) 2006-12-04 2014-12-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US7732811B2 (en) 2006-12-04 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8319210B2 (en) 2006-12-04 2012-11-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US8053980B2 (en) 2007-03-23 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and electronic device
WO2009047899A1 (en) * 2007-10-12 2009-04-16 Panasonic Corporation Light emitting element and display device
JPWO2009047899A1 (en) * 2007-10-12 2011-02-17 パナソニック株式会社 LIGHT EMITTING ELEMENT AND DISPLAY DEVICE
US8251765B2 (en) 2007-10-19 2012-08-28 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
US8040047B2 (en) 2007-10-19 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
JPWO2009057317A1 (en) * 2007-11-01 2011-03-10 パナソニック株式会社 LIGHT EMITTING ELEMENT AND DISPLAY DEVICE
WO2009057317A1 (en) * 2007-11-01 2009-05-07 Panasonic Corporation Light-emitting device and display device
WO2009116259A1 (en) * 2008-03-17 2009-09-24 パナソニック株式会社 Light-emitting device
US8450766B2 (en) 2008-03-17 2013-05-28 Panasonic Corporation Light emitting device
JP5351882B2 (en) * 2008-03-17 2013-11-27 パナソニック株式会社 Light emitting element
US8278649B2 (en) 2008-03-18 2012-10-02 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
US9224960B2 (en) 2008-03-18 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US9192017B2 (en) 2008-03-18 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device and electronic device
US8362466B2 (en) 2008-12-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
US9437824B2 (en) 2008-12-17 2016-09-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light emitting device, and electronic device
US9147854B2 (en) 2009-01-21 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element, light-emitting device, and electronic device
JP2010192431A (en) * 2009-01-21 2010-09-02 Semiconductor Energy Lab Co Ltd Light emitting element, light emitting device, and electronic equipment
JP2014099641A (en) * 2009-01-21 2014-05-29 Semiconductor Energy Lab Co Ltd Light emitting device
WO2011024346A1 (en) * 2009-08-24 2011-03-03 シャープ株式会社 Organic electroluminescent element, organic electroluminescent display device, and organic electroluminescent illuminating device

Similar Documents

Publication Publication Date Title
EP1308494B1 (en) Organic electroluminescence element
JPH06158038A (en) Organic electroluminescent element
US6838818B2 (en) Light emitting device having a dopant in a light emitting layer and method of producing the light emitting device
TWI403211B (en) Organic electroluminescent elements
US5276381A (en) Organic electroluminescent device
CA2425797C (en) Organic light emitting devices
KR101408547B1 (en) Organic electroluminescent element
EP1755362B1 (en) Organic el device
US20050214570A1 (en) OLEDs doped with phosphorescent compounds
EP1653784B1 (en) Organic electroluminescent device, illuminating device, and display
JP2001237079A (en) Organic electroluminescence element
JP2006032883A (en) Light emitting element
JP2014099645A (en) Organic electroluminescent element
JP2001237080A (en) Organic electroluminescence element
JP2007005211A (en) Organic electroluminescent element, its manufacturing method, display device, and illumination device
JP5664715B2 (en) Organic electroluminescence device
JP2001313177A (en) Organic electroluminescent element
JP3744103B2 (en) Organic electroluminescence device
EP1809077A2 (en) Organic electroluminescent element
JP2002367786A (en) Luminous element
JP3779625B2 (en) Light emitting element
JPH0790254A (en) Organic electroluminescent device
JP3482448B2 (en) EL device
JP3803919B2 (en) Light emitting element
JP2002367785A (en) Luminous element