JPH0614436B2 - Semiconductor memory - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor memory, and in particular, by providing multistage registers or latches in a memory chip, the memory cycle time can be shortened and a plurality of memory read / write operations can be performed simultaneously. Pertaining to pipeline memory for processing.

(Prior Art) A semiconductor in which a pipeline register (or a latch) is provided in a memory chip and holds addresses / write data / read data of requests issued successively before and after the request being processed in the chip. Memory developed, registered SRAM or pipeline SR
It is called AM.

Here, the pipeline operation in the semiconductor memory means that a process of processing a read / write request is divided into a plurality of small processes (hereinafter referred to as stages) that can be independently operated, and a plurality of memory requests are processed in a flowable manner. Means to go. On the other hand, the non-pipelined semiconductor memory is a semiconductor memory that basically accepts the next request every time one read / write request is completed. That is, in a semiconductor memory that is not pipelined, the time from when a read / write request is input to the memory until the processing is completed (hereinafter referred to as memory access time) and the read / write request can be input to the memory. The possible time intervals (hereinafter referred to as memory cycle time) are almost equal. Pipelined memory is characterized by a memory cycle time that is shorter than the memory access time and a throughput that is greater than non-pipelined memory.

For example, the Am9151 manufactured by AMD Inc. has a latch at the output stage of read data from the memory, and simultaneously outputs subsequent read / write requests while outputting data, which is the processing result of a certain memory read request, to the outside of the chip. The GigaBit Logic 12G014 has an input register and an output register, and is capable of pipeline operation. Further, as a further development of this idea, there is JP-A-61-1486.
No. 92 shows that the temporary storage is also provided between the address decoder / driver and the memory cell array, and the processing in the address decoder / driver and the memory cell array are independently operable stages.

(Problems to be Solved by the Invention) However, such a pipeline memory is characterized in that each pipelined stage is operated in synchronization, and synchronization causes a problem of an increase in access time. Further, this synchronization signal needs to be supplied from outside the semiconductor memory (usually a clock is used), and supplying the synchronization signal to all the memory chips incorporated in the system increases the cost and power consumption of the entire device. In addition, there remains a compatibility issue with non-pipelined memory that allows conventional asynchronous memory access cycles to be initiated. Hereinafter, the problem of increasing the access time will be specifically described.

The problem of increased access time caused by pipelining and synchronization is that the processing time of each stage that makes up the pipeline is
This is because it is difficult to make the times equal to each other. For example, if a pipeline is composed of a first stage that requires a processing time of 20 nsec and a second stage that requires a processing time of 10 nsec, the minimum cycle time is
20nsec (the processing time of the first stage which requires the maximum processing time), and the synchronization signal is also given every 20nsec. The access time is 40nsec because the pipeline has two stages.
(20nsec × 2), 30ns unless pipelined
The access time, which requires ec, will be delayed by 10 nsec by providing a synchronization signal by pipelining.

(Means for Solving the Problems) The means provided by the present invention for solving the above problems are: an input circuit for inputting an address signal, and an address for decoding the address signal received from the input circuit. A decoder driver, a memory cell array for writing data to or reading data from a memory cell at an address indicated by the output of the address decoder driver, and a sense amplifier for amplifying an output signal of the memory cell array In a semiconductor memory including an output circuit that outputs the output of the sense amplifier as a memory read result and a read / write control circuit that controls the timing of reading and writing of the memory cell array, the output of the address input circuit is stored. Input to the address decoder driver A first temporary storage circuit; a second temporary storage circuit for storing the decoded address output from the address decoder / driver and inputting it into the memory cell array; and a memory read result output from the sense amplifier. And a processing start signal that is input asynchronously with the preceding memory read processing start signal, and first input to the first temporary storage circuit. Latch the output of the address input circuit,
Next, after the delay time D ₁ that is equal to the processing of the address decoder / driver is confirmed, the decoded address is latched in the second temporary storage circuit, and then the reading processing from the memory cell array and the Set the delay time equal to that for the process in the sense amplifier to be confirmed by D ₁ +
After a lapse of D ₂ , the output of the sense amplifier is latched in the third temporary storage circuit, and finally the memory read result is output via the output circuit, thereby asynchronously starting a plurality of memory reads, Further, the plural memory read asynchronous start simultaneous processing means provides time delays D ₁ and D ₁ + D ₂ to the processing start signal inputted asynchronously with the preceding memory read processing start signal. A delay means is provided, the time of the delay times D ₁ and D ₁ + D ₂ is known from the output of the delay means, and the decoded address and the output of the sense amplifier are respectively latched at these times. .

In order to solve the above-mentioned problems, means provided by the second invention of the present application are: an input circuit for inputting an address signal, an address decoder driver for decoding the address signal received from the input circuit, and this address. A memory cell array for writing data to or reading data from the memory cell at the address indicated by the output of the decoder / driver, a sense amplifier for amplifying the output signal of this memory cell array, and an output of this sense amplifier A semiconductor memory including an output circuit that outputs a memory read result, a read / write control circuit that controls read and write timings of the memory cell array, and a circuit that detects a change in the address signal input to the input circuit. In, the output of the address input circuit is stored A first temporary storage circuit for inputting to the address decoder / driver, and a second temporary storage circuit for storing the decoded address output from the address decoder / driver and inputting it to the memory cell array; A third temporary storage circuit that stores the memory read result that is the output of the amplifier and outputs the input / output circuit, and a change in the address signal applied to the input circuit as a start signal of the memory access cycle. The output of the address input circuit is latched in the first temporary memory circuit and then decoded by the second temporary memory circuit after a delay time equal to the time when the processing in the address decoder driver is confirmed. The read address from the memory cell array and the process in the sense amplifier are confirmed. The output of the sense amplifier is latched in the third temporary storage circuit after the lapse of a delay time equal to, and finally the memory read result is output via the input / output circuit, thereby asynchronously reading a plurality of memories. Means for starting and processing at the same time, wherein the plurality of memory read asynchronous start simultaneous processing means add time delays D ₁ and D _{1 to the} start signal obtained from a change of the address signal applied to the input circuit. A delay means for giving + D ₂ is provided, the time of the delay times D ₁ and D ₁ + D ₂ is known from the output of the delay means, and the decoded address and the output of the sense amplifier are respectively latched at these times. Is characterized by.

Embodiments Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a block diagram of a semiconductor memory showing an embodiment of the present invention.
FIG. In the figure, 1 to 4, 7 to 10 and 15 are pies
It is a planer register and may be replaced by a latch. input
Registers 1-4 receive inputs from outside the chip. Line
Dress input register 1 is row address input terminal signal CA_o~ C
A_iColumn address input register 2 is a column address input terminal
Signal RA_o~ RA_jWrite data input register 3
Embedded data input terminal signal DIN_o~ DIN_kControl signal input
The register 4 is a "writeable" input terminal signal ▲ ▼WE
Respectively received. 1 to 4 pipeline registers
Captures the input data when the Start signal is input
Mu.

The row address decoder 5 is connected to the row address input register 1. The column address decoder 6 is connected to the column address input register 2.

Registers 7 to 10 are pipeline registers installed in the memory chip during processing. In the present embodiment, the row address decoder and the column address decoder are provided between the address decoder and the memory cell array, but the row address decoder and the column address decoder may be provided in two stages. Further, a pipeline register having a plurality of stages may be provided. A data capture signal is applied to each of the pipeline registers 7 to 10 after a Start signal is input and a delay time of D1 is passed.

The memory cell array 13 comprises a large number of static memory cells arranged on an array.

The write circuit 11 writes to the memory cell array 13.

The read / write control circuit 12 creates a read enable signal (RE) in accordance with the “write enable signal (▲ ▼)” received via the control signal input register 4 and the control signal register 10 and writes the read enable signal (RE) to the sense amplifier 14 again. Available signal (WE)
Is generated and sent to the writing circuit 11.

The sense amplifier 14 detects a weak signal read from the memory cell array 13 and determines the memory read result.

The output data register 15 receives the memory read result from the sense amplifier 14 and sends it to the output terminals DOUT _{o to} DOUT _k . After inputting the Start signal to this output register, D1
The data capture signal is applied after a delay time of + D2.

The delay circuit 16 has a time equal to the delay time required for address decoding + the pipeline register setup time.
Delay the Start signal by D1 and supply the capture signal to the pipeline registers 7, 8, 9, and 10 after the delay time D1 from the input of the Start signal, and also supply the capture signal to the delay circuit 17. Also supplied as an input signal. Delay circuit
17 is the delay time required for memory cell access and sensing +
Add a time delay to the capture signal by a time D2 equal to the setup time of the pipeline register. Therefore, the delay circuit 17 supplies the capture signal to the output register 15 after the delay time D2 when the capture signal of the output of the delay circuit 16 is input.

A data read operation will be described with reference to FIGS. 1 and 2.

In the data read operation, first, the row address applied to the address input terminals CA _{o to} CA _i is taken into the row address input register at the rising edge of the Start signal and becomes its output. On the other hand, in parallel with this, the address input terminal RA _o
The column address applied to ~ RA _j is also taken into the column address input register at the rising edge of the Start signal and becomes its output.

Next, the output of the address input register is address-decoded with delay time D1 minus the setup time of the pipeline register of the next stage, and after the delay time D1, it is fetched into the row / column selection registers 7 and 8 and becomes an output. The row address is decoded by the row address decoder 5, and the column address is decoded by the column address decoder 6.

Further, the output of the row / column selection register is sensed by accessing the memory cell with delay time D2-the setup time of the pipeline register of the next stage. Delay time
It is taken into the output data register 15 after D2 and becomes the output. Finally, the output of the output data register 15 is sent out of the chip.

Here, the asynchronous pipeline operation in the data read operation will be described with reference to FIG. Address input terminal
The minimum value of the activation interval (memory cycle time) of the memory access by the start signal and the address application to CA _o ~ CA _i , RA _o ~ RA _j is the maximum value of the processing delay time in each pipeline stage in the chip. Determined by In this embodiment, the processing delay due to the memory cell array and the sense is longer than the address decoding processing delay which is the pipeline stage. Therefore, the delay time D2 obtained by adding the setup time of the pipeline register to the delay time due to the memory cell access and sensing serves as the minimum guarantee of the memory cycle time. In FIG. 2, the address Am is applied in the next cycle after the address Al is input. The address input register prevents the input of the address Al from colliding with the decoding of the preceding address input Al. Similarly, when the output of the address input register becomes Am, the decoding result for the address Al is already held by the row / column selection register, and the memory cell access is started. First stage (outside the chip → address input register), second stage (address input register → address decoder → row / column selection register), third stage (row / column selection register → memory cell array →) The sense amplifier → output register) and the fourth stage (output register → outside the chip) can independently service different memory read requests.

From the above, it is shown that it is possible to read the memory one after another with a memory cycle time shorter than the memory access time, and to start the memory access cycle asynchronously with the preceding request. According to the present invention, the memory access time is determined only by the sum of the processing delay time in each pipeline stage connected in series and the setup time of the pipeline register. On the other hand, in the synchronous pipeline memory,
(Maximum delay time in pipeline stages connected in series + setup time of pipeline register) ×
The memory access time is determined by the number of stages in the chip. This means that if the processing time of each pipeline stage cannot be made equal to each other in the synchronous pipeline memory, division loss occurs due to pipeline processing. The asynchronous pipeline memory according to the present invention does not have such a drawback.

The read operation of the memory has been described above with reference to FIGS.

Next, the write operation will be described with reference to FIGS.

In the data write operation, first, the row address applied to the address input terminals CA _{o to} CA _i is taken into the row address input register 1 at the rising edge of the Start signal and becomes an output. On the other hand, in parallel with this, address input terminals RA _{o to} R
The column address applied to A _j is also taken into the column address input register 2 at the rising edge of the Start signal and becomes an output.

Next, the output of the address input register is address-decoded with delay time D1 minus the setup time of the pipeline register of the next stage, and after delay time D2, it is taken into the row / column selection registers 7 and 8 and becomes an output. .

On the other hand, the data itself written in the memory is applied to the write data input terminals DIN _{o to} DIN _k at the same timing as the address input time in this embodiment. The write data becomes the output of the write data input register at the rising edge of the Start signal like the address. Also, the delay time
D1--It is taken into the write data register when the setup time of the pipeline register of the next stage has elapsed. Since there is no processing that requires a particularly large delay between the write data output register 3 and the write data register 9 which are pipeline registers, the register is set to one stage and the write data input timing is delayed by D1 time. It doesn't matter.

Finally, the memory cell selected by the output of the row / column selection register is written with the write data register value within the delay time D2, thus ending the write operation.

The memory write operation has been described above with reference to FIGS.

Finally, FIG. 4 shows the case where the memory read operation and the memory write operation are mixed and the memory operation is performed. Fourth
The figure shows the timing when reading to address Al, writing to address Am, and reading to address An are continuously performed by pipeline processing, and shows that continuous operation is possible.

(Effects of the Invention) As described above, the semiconductor memory according to the present invention can start memory reading asynchronously and simultaneously perform a plurality of processes.

[Brief description of drawings]

FIG. 1 is a block diagram showing an embodiment of the present invention, FIG. 2 is a timing chart of signals of respective parts of the embodiment during data read operation, and FIG. 3 is timing of signals of respective parts of the embodiment during data writing. Chart, 4th
The drawing is a timing chart of signals of respective parts in the embodiment when data reading and writing are alternately and continuously performed. In FIG. 1, 1-4, 7-10, and 15 are pipeline registers, 1 is a row address input register, 2 is a column address input register, 3 is a write data input register, 4 is a control signal input register, and 5 is a row. Address decoder, 6 is a column address decoder, 7 is a row selection register, 8
Is a column selection register, 9 is a write data register, 10 is a control signal register, 11 is a write circuit, and 12 is read / write.
A write control circuit, 13 is a memory cell array, 14 is a sense amplifier, 15 is an output data register, 16 is a delay circuit that generates a delay time D1 equal to the processing delay time of the address decoder + the setup time of the pipeline register, and 17 is a memory cell. Delay time required for access and sense + delay time equal to pipeline register setup time
This is a delay circuit that generates D2.

Claims (4)

[Claims] 1. An input circuit for inputting an address signal, an address decoder / driver for decoding the address signal received from the input circuit, and writing of data into a memory cell at an address indicated by the output of the address decoder / driver. Or a memory cell array for reading data from the address, a sense amplifier for amplifying an output signal of the memory cell array, an output circuit for outputting the output of the sense amplifier as a memory read result, and a reading of the memory cell array. In a semiconductor memory provided with a read / write control circuit for controlling a write timing, a first temporary storage circuit for storing the output of the address input circuit and inputting it to the address decoder / driver, and the address decoder / driver Deco output A second temporary storage circuit for storing the stored address and inputting it to the memory cell array; a third temporary storage circuit for storing a memory read result output from the sense amplifier and inputting it to the output circuit; Each time a processing start signal that is input asynchronously with the memory read processing start signal is input, the output of the address input circuit is first latched in the first temporary storage circuit,
Next, after the delay time D ₁ that is equal to the processing in the address decoder / driver is confirmed, the decoded address is latched in the second temporary storage circuit, and then the reading processing from the memory cell array is performed. A delay time equal to that when the processing in the sense amplifier is confirmed is D ₁ +
After a lapse of D ₂ , the output of the sense amplifier is latched in the third temporary storage circuit, and finally the memory read result is output via the output circuit, thereby starting a plurality of memory reads asynchronously, and A plurality of memory read asynchronous start simultaneous processing means for giving a time delay D ₁ and D ₁ + D ₂ to the processing start signal input asynchronously with the preceding memory read processing start signal. Means for detecting the time when the delay times D ₁ and D ₁ + D ₂ have elapsed from the output of the delay means, and latching the decoded address and the output of the sense amplifier at these times, respectively. memory. 2. The first to third temporary storage circuits are characterized by temporarily storing and outputting an input signal in accordance with a control signal, or passing the input signal as it is without storing it. The semiconductor memory according to claim 1. 3. An input circuit for inputting an address signal, an address decoder / driver for decoding the address signal received from the input circuit, and writing of data to a memory cell at an address indicated by the output of the address decoder / driver. Or a memory cell array for reading data from the address, a sense amplifier for amplifying an output signal of the memory cell array, an output circuit for outputting the output of the sense amplifier as a memory reading result, and a reading of the memory cell array. In a semiconductor memory including a read / write control circuit that controls a write timing and a circuit that detects a change in the address signal input to the input circuit, the output of the address input circuit is stored and the address decoder The first one to input to the driver A temporary storage circuit, a second temporary storage circuit for storing the decoded address output from the address decoder / driver and inputting it to the memory cell array, and a memory read result output from the sense amplifier. A third temporary storage circuit input to the output circuit, and a change of the address signal applied to the input circuit as a start signal of a memory access cycle, and first, the first temporary storage circuit stores the address input circuit of the address input circuit. The output is latched, then the decoded address is latched in the second temporary memory circuit after a delay time equal to the time when the processing in the address decoder driver is confirmed, and then the address from the memory cell array is latched. The third temporary recording is performed after a delay time equal to the time when the reading process and the process in the sense amplifier are established. A circuit for latching an output of the sense amplifier and finally outputting a memory read result via the output circuit, thereby asynchronously starting a plurality of memory reads and simultaneously processing the plurality of memory reads. The asynchronous start simultaneous processing means includes a delay means for giving a time delay D ₁ and D ₁ + D ₂ to the start signal obtained from a change of the address signal applied to the input circuit, and delayed by an output of the delay means. A semiconductor memory characterized in that when the times D ₁ and D ₁ + D ₂ have elapsed, the decoded address and the output of the sense amplifier are respectively latched at these times. 4. The first to third temporary storage circuits are characterized by temporarily storing and outputting an input signal in accordance with a control signal, or passing the input signal as it is without storing it. The semiconductor memory according to claim 3.