JPH06140296A - Pattern forming method - Google Patents

Pattern forming method

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Publication number
JPH06140296A
JPH06140296A JP4286503A JP28650392A JPH06140296A JP H06140296 A JPH06140296 A JP H06140296A JP 4286503 A JP4286503 A JP 4286503A JP 28650392 A JP28650392 A JP 28650392A JP H06140296 A JPH06140296 A JP H06140296A
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Japan
Prior art keywords
film
resist
pattern
etched
window
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JP4286503A
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Japanese (ja)
Inventor
Yoshimasa Nakagami
Tatsuyuki Sanada
好正 中神
達行 真田
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Fujitsu Ltd
富士通株式会社
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Priority to JP4286503A priority Critical patent/JPH06140296A/en
Publication of JPH06140296A publication Critical patent/JPH06140296A/en
Application status is Withdrawn legal-status Critical

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Abstract

PURPOSE:To restrain an etched film from varying in amount of side etching even if the film varies in thickness by a method wherein a window is provided to a thin part of an etching film, then the window provided to the thin part of the film is covered with resist through a heat treatment, and a window is provided to a thick part of the film. CONSTITUTION:Positive-type resist is applied, narrow windows 9 are provided onto a source electrode and a wide window is bored in a tab (tap automated bonding) terminal at the same time, and an SiN film 7 on the source electrode is etched through a resist film 8 as a mask. Then, a thermal treatment is carried out, and the narrow windows 9 provided onto the source electrode are covered with a resist 11. On the other hand, resist located on the tab terminal is turned round, and the wide window 10 is not filled with resist. In succession, the SiN film 3 left on the tab terminal is successively etched to make an Al/Cr film 2 of the tab terminal exposed, and a pixel electrode and a tab electrode ITO (indium tin oxide) film 12 are formed on a substrate.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は液晶表示素子や半導体素子等の製造工程におけるパターンの形成方法に関する。 The present invention relates to a method of forming a pattern in the manufacturing process such as a liquid crystal display device or a semiconductor device.

【0002】 [0002]

【従来の技術】基板上に種々のパターンを形成する場合,ウエットエッチングは費用が安価な点から,また, When forming the various patterns of the Related Art substrate, wet etching from cost inexpensiveness, also,
等方性ドライエッチングは下地との選択性が優れている点から,両者とも目的に応じて広く用いられているが, Although the isotropic dry etching from the viewpoint of its excellent selectivity to the underlying, widely used in accordance with the purpose both,
これらのエッチング方法はサイドエッチを伴うためエッチング後の開口寸法を揃えるために被エッチング膜の膜厚は基板全面において一定でなければならない。 These etching methods the thickness of the film to be etched in order to align the opening dimension after etching accompany side etch must be constant in the entire surface of the substrate. しかしながら,被エッチング膜によっては下地の段差の影響で局所的に膜厚が異なる場合がある。 However, depending on the film to be etched in some cases locally thickness varies due to the influence of the step of the base.

【0003】また,工程の簡素化によるコストダウンの要請から,2つの膜を通してエッチングすることがあり,この時下側の被エッチング膜がすでに一度パターニングを行っていると,そのパターンによって被エッチング膜の膜厚が局所的に変動していることになる。 [0003] the demand for cost reduction by simplification of the process, may be etched through the two films, the film to be etched in this case the lower side is done already once patterned, etched film by the pattern thickness of is that fluctuates locally.

【0004】上記の膜厚変動はエッチング時のサイドエッチ量の変動となって現れ,設計通りの寸法に開口できなくなる。 [0004] The thickness variation appears as a variation in the amount of side etching during etching, it can not be open to the dimensions as designed. このため,従来,膜厚の異なる被エッチング膜の窓開けを同時に行うと,膜厚の薄い開口部ではサイドエッチが進み,開口部は大きくなる。 Therefore, conventionally, when the thickness of different film to be etched windows opened simultaneously, in a small thickness opening side etching progresses, the opening becomes larger.

【0005】すなわち,被エッチング膜の膜厚が場所により異なる場合,膜厚の厚いところと,薄いところとでパターンの形成を2回に分け,各々の開口寸法を最適化するか,または,レジストを露光するマスクのパターンの寸法に,サイドエッチ量を打ち消すだけの寸法補正を行っていた。 Namely, if the thickness of the film to be etched is different by location, divided and where a thick film thickness, a thin place as in patterning of the two, or to optimize each opening size, or resist the dimensions of the pattern of the mask for exposure was not carried out dimension correction only cancel out the amount of side etching. この場合は,被エッチング膜の膜厚の厚いところと薄いところで寸法補正量を変えなければならない。 In this case, it must change the size correction amount at thick at the thin thickness of the etched film.

【0006】 [0006]

【発明が解決しようとする課題】パターン形成を膜厚に応じて分けて行うことは工程数を増し,製造コスト高となり,また,露光マスク上で寸法補正を行うことは,その値がマスク全面で一定でない場合パターンデータ発生のためのCAD の工数を増大させるという欠点があった。 Increasing the number of processes be performed separately depending on the thickness of the pattern formation [0005], becomes high production cost, also possible to perform the size correction on the exposure mask, the mask entirely its value in a drawback of increasing the number of steps CAD for when the pattern data generated not constant.

【0007】本発明はリソグラフィ工程,すなわちレジスト膜のパターニングからエッチングまでの工程数の増加を抑え,被エッチング膜の膜厚が変動してもサイドエッチ量が大きく変動しないでパターニングできることを目的とする。 [0007] The present invention suppresses the steps increase the number of lithographic steps, i.e., from the patterning of the resist film to etching, and it is an object of film thickness of the etched film can be patterned without variation amount of side etching is greater fluctuates .

【0008】 [0008]

【課題を解決するための手段】上記課題の解決は,1) Solving the problems SUMMARY OF THE INVENTION may, 1)
フォトレジスト膜をマスクにしたエッチングにより, 被エッチング膜の膜厚の異なる箇所に同時に窓開けを行う際に, 該被エッチング膜の膜厚の薄い箇所の窓開けがなされた後, 熱処理により膜厚の薄い箇所の窓を該レジストで覆い, 続いてエッチングを行い該被エッチング膜の膜厚の厚い箇所の窓開けを行うパターン形成方法,あるいは2)基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光と該露光部の一部に遠紫外線露光とを行い,現像して該遠紫外線露光部の開口部にレジスト残膜を残したレジストパターンを形成し,次いで該基板上に被膜を被着し,該レジスト残膜上の該被膜をリフトオフする過程を有するパターン形成方法,あるいは3 By etching using the photoresist film as a mask, when performing open film simultaneously windows at different locations in thickness of a film to be etched, after the opening film thinner portion of the window of thick 該被 etched film is made, the film thickness by heat treatment covered with a thin portion window the resist of the followed pattern forming method performs a window is opened in the thickness of the thick portion of the 該被 etching film etching is carried out or 2) positive based polymer capable of alkali development on the substrate, the resist having both photosensitivity and negative photosensitive coating performs the far ultraviolet exposure in a part of the near-ultraviolet exposure and the exposure unit for forming a positive pattern, the opening of the distal ultraviolet exposure unit and developed residual resist film to form a resist pattern left, then a film is deposited on the substrate, a pattern forming method comprising the step of lifting off the coating film on the resist remaining film or 3, 基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光を行い,現像してレジストパターンを形成し,次いで,該基板全面に近紫外線露光と遠紫外線露光とを行い,再度現像を行う過程を有するパターン形成方法,あるいは4)基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光と該露光部の一部に遠紫外線露光とを行い,現像して該遠紫外線露光部の開口部にレジスト残膜を残したレジストパターンを形成し,次いで,該レジストパターンをマスクにして下地膜をエッチングし,次いで,該レジスト残膜を除去し,再度該下地膜をエッチングする過程を有 The resist having both positive photosensitive and negative photosensitive based polymer capable of alkali development is applied to a substrate, subjected to near UV exposure to form a positive pattern, and developed to form a resist pattern, then the It performs a deep UV exposure and near ultraviolet exposure over the entire surface of the substrate and having both of the pattern forming method or 4) the positive photosensitive base polymer that can be alkali developed on the substrate and a negative photosensitive, comprising the step of performing development again a resist is applied, it performs a deep UV exposure in a part of the near-ultraviolet exposure and the exposure unit for forming a positive pattern, forming the developed resist pattern leaving a residual resist film to the opening of the distal ultraviolet exposure unit and, then the resist pattern as a mask to etch the underlying film, then, we have a process in which the residual resist film is removed, and etching the lower fabric layer again るパターン形成方法により達成される。 It is achieved by that the pattern forming method.

【0009】 [0009]

【作用】発明1は,ポジ型フォトレジスト膜の膜厚に相当する程度の寸法で窓開けされた開口部は熱処理により塞がるが,膜厚に比し十分大きい寸法で窓開けされた開口部は熱処理により塞がらないことを利用することにより,膜厚の異なる被エッチング膜を同時にパターニングすることができ,かつ膜厚の薄い箇所でのサイドエッチはなくなる。 [Action] invention 1 is an opening portion which is opened windows dimensions of extent corresponding to the thickness of the positive photoresist film is clogged by heat treatment, it is is an opening portion opened window with a sufficiently large size relative to the thickness by utilizing the fact that not Fusagara by heat treatment, can be patterned different thicknesses etched film simultaneously and no longer side etching of a thin film thickness portion.

【0010】発明2〜4では,フェノールノボラック系樹脂をベースポリマとし,感光剤としてナフトキノンジアジドを含み,さらに遠紫外線に感じる光架橋剤として [0010] In the invention 2 to 4, the phenolic novolak resin as a base polymer includes a naphthoquinone diazide as a photosensitive agent, as further photocrosslinker feel deep UV
4-4'-ジアジドジフェニルメタン, または 4-4'-ジアジドジフェニルスルフィドを添加する。 4,4'-diazide diphenylmethane, or 4-4' adding diazide diphenyl sulfide.

【0011】図2(A) 〜(C) は発明2の原理説明図である。 [0011] FIG. 2 (A) ~ (C) is an explanatory view of the principle of the invention 2. 図2(A) において,基板21上に上記のレジスト22を塗布し,近紫外線露光によりすべての開口部を露光焼付し,別の露光マスク23を用いて一部の開口部24に遠紫外線露光を行う。 In FIG. 2 (A), the resist 22 is coated on the substrate 21, all the openings exposed baked by near ultraviolet exposure, deep UV exposure in a part of the opening 24 by using another exposure mask 23 I do. ここで,斜線部は潜像領域を示す。 Here, the hatched portion indicates the latent image area.

【0012】図2(B) において,アルカリ現像液で現像し,レジストパターン25を得る。 [0012] In FIG. 2 (B), and developed with an alkaline developer to obtain a resist pattern 25. このとき,遠紫外線露光によりレジストは架橋されるため,開口部24にはレジストが残膜する。 At this time, since the resist is crosslinked by deep UV exposure, in the opening 24 the resist is remaining film.

【0013】図2(C) において,開口部24に残るレジストの膜厚は,その上に形成される被膜26をリフトオフし得る膜厚となるように近紫外露光と遠赤外露光の露光量を最適化する。 [0013] In FIG. 2 (C), the film thickness of the resist remaining on the opening 24, the exposure amount in the near-ultraviolet exposure and far-infrared exposure so as to have a thickness capable of lifting off a film 26 formed thereon to optimize.

【0014】次いで, 基板上に全面に被膜26を成膜し, [0014] Then, a film 26 is formed on the entire surface on the substrate,
開口部24上を含めて被膜26をリフトオフして最終的なパターンを得る。 Obtaining a final pattern is lifted off the coating 26 including the opening 24 above. 図3(A),(B) は発明3の原理説明図である。 Figure 3 (A), (B) is an explanatory view of the principle of the invention 3.

【0015】図3(A) において,基板21上に上記のレジスト22を塗布し,近紫外線露光によりすべての開口部を露光焼付し,アルカリ現像液で現像し,レジストパターン25を得る。 [0015] In FIG. 3 (A), the resist 22 is coated on the substrate 21, all the openings exposed baked by near ultraviolet exposure, and developed with an alkali developer to obtain a resist pattern 25.

【0016】その後,全面に遠紫外線露光を行い,レジスト膜の表層に光架橋部27を形成する。 [0016] Thereafter, far ultraviolet exposure over the entire surface to form the photocrosslinking portion 27 on the surface layer of the resist film. 図3(B) において,十分な近紫外線露光を行ってアルカリ現像液で現像しレジストパターン28を得る。 In FIG. 3 (B), obtaining a resist pattern 28 is developed with an alkali developer by performing a sufficient near UV exposure.

【0017】図4は発明4の原理説明図である。 [0017] FIG. 4 is an explanatory view of the principle of the invention 4. 図において,基板21上に上記のレジスト22を塗布し,近紫外線露光によりすべての開口部を露光焼付し,別の露光マスク23を用いて一部の開口部24に遠紫外線露光を行い,アルカリ現像液で現像し,レジストパターン25を得る。 In the figure, the resist 22 is coated on the substrate 21, all the openings exposed baked by near ultraviolet exposure, subjected to far ultraviolet exposure in a part of the opening 24 by using another exposure mask 23, an alkali It was developed with a developer to obtain a resist pattern 25.

【0018】このとき,開口部24のレジスト膜厚が所定の膜厚となるように近紫外線と遠紫外線の露光量を最適化する。 [0018] At this time, the resist film thickness of the opening 24 to optimize the exposure amount of deep UV and near-UV to a predetermined thickness. その後,被エッチング膜29を開口部30の下地31 Thereafter, the base 31 of the opening 30 to be etched 29
が現れるまでウエットまたはドライエッチングする。 Wet or dry etching until the appearance. この際, エッチングを途中で一端中断した後開口部24のレジストがなくなるまでアッシングまたは酸素ガスを用いた反応性イオンエッチング(RIE) を行い,次いで,エッチングを再開して下地31が現れた時点で終了する。 In this case, ashing or oxygen gas reactive ion etching using (RIE) to the registration of the opening 24 is eliminated after one interrupted etching halfway, then when the base 31 appeared to resume etching finish.

【0019】上記の発明2,4においては,レジスト中の光架橋剤の作用により,遠紫外線露光時にベースポリマに架橋が起こり,現像液に対して不溶化するため,遠紫外線が照射された領域にはレジスト膜が残る。 [0019] In the above invention 2, 4 by the action of light crosslinking agent in the resist, crosslinking occurs in the base polymer when far ultraviolet exposure, to insoluble in a developer, the far ultraviolet ray is irradiated region the resist film is left. この時のレジストの残膜率は架橋剤の濃度,近紫外線の露光量,遠紫外線の露光量,現像時間等によって決まるためこれらの要素を最適化することにより所望の残膜厚さが得られる。 The concentration of the residual film ratio of the crosslinking agent in the resist at this time, the exposure of the near ultraviolet, far ultraviolet exposure amount, the desired residual film thickness is obtained by optimizing these factors for determined by the development time, etc. .

【0020】また,発明3においては,厚いレジストパターンでのポリマの吸収により,遠紫外線がパターンの下の方にまで届かず,本来の膜厚(薄い膜厚)のパターンでは遠紫外線が下の方まで届き膜全体におよぶため, Further, in the invention 3, the absorption of the polymer in the thick resist pattern, deep UV does not reach near the bottom of the pattern, deep UV is below the pattern of the original thickness (small thickness) for spanning the entire reach membrane to how,
近紫外線露光量が十分におおきいときは現像後に本来のレジストパターンが残り,厚いレジストパターンは除去される。 When the near UV exposure is sufficiently big retains original resist pattern after development, a thick resist pattern is removed.

【0021】 [0021]

【実施例】図1(A) 〜(E) は発明1の実施例を説明する断面図である。 DETAILED DESCRIPTION FIG. 1 (A) ~ (E) is a sectional view for explaining an embodiment of the invention 1. この実施例では,一例として逆スタガ型薄膜トランジスタ(TFT) 基板の製造プロセスについて説明する。 In this embodiment, it will be described inverted staggered thin film transistor (TFT) substrate manufacturing process as an example.

【0022】図1(A) において,ガラス基板 1上に, ゲート電極としてAl/Cr 膜 (膜厚500/1000Å) 2を形成後, ゲート絶縁膜としてSiN 膜 (膜厚4000Å) 3, TFT動作層としてアモルファスシリコン(a-Si)膜 (膜厚 150 [0022] In FIG. 1 (A), on a glass substrate 1, after forming the Al / Cr film (thickness 500/1000 Å) 2 as a gate electrode, SiN film (film thickness 4000 Å) as the gate insulating film 3, TFT operation amorphous silicon (a-Si) film as the layer (film thickness 150
Å) 4, チャネル保護膜としてSiN 膜 (膜厚1000Å) 5 Å) 4, SiN film (thickness 1000Å as a channel protective film) 5
をプラズマ気相成長(CVD) 法により堆積する。 A is deposited by plasma enhanced chemical vapor deposition (CVD) method.

【0023】図1(B) において,基板全面にレジストを塗布し,ゲート電極に自己整合してゲート電極上にレジスト膜を残し,このレジスト膜をマスクにしてSiN 膜 5 [0023] In FIG. 1 (B), the resist is coated on the entire surface of the substrate, leaving the resist film on the gate electrode by self-alignment with the gate electrode, SiN film 5 using the resist film as a mask
をエッチングする。 It is etched.

【0024】次いで, 基板上にコンタクト層/電極膜として n +型a-Si/Cr 膜(膜厚500/1000Å) 6をそれぞれプラズマCVD とスパッタ法を用いて被着し,通常のフォトリソグラフィを用いてa-Si膜 4と n +型a-Si/Cr 膜 6 [0024] Then, n + -type a-Si / Cr film (thickness 500/1000 Å) 6 respectively deposited by plasma CVD and sputtering as a contact layer / electrode film on a substrate, a conventional photolithographic a-Si film 4 and the n + -type a-Si / Cr film 6 using
をエッチングし,ソース,ドレイン電極を形成し, 素子分離を行う。 The etched to form the source and drain electrodes, performing element isolation.

【0025】Crのエッチングは硝酸第2セリウムアンモニウムにより, a-Siのエッチングは反応性イオンエッチングによる。 [0025] The etching of the Cr is ceric ammonium nitrate, the etching of the a-Si by reactive ion etching. 図1(C) において,保護膜としてSiN 膜 In FIG. 1 (C), SiN film as a protective film
(膜厚3000Å) 7 をプラズマCVD 法により堆積する。 (Thickness 3000 Å) 7 is deposited by a plasma CVD method.

【0026】次いで, 厚さ 2.5μmのポジ型レジスト膜 [0026] Then, with a thickness of 2.5μm positive resist film
8を塗布し, ソース電極上に径2.5μmの複数個の狭い窓 9と, タブ(TAB; Tape Automated Bonding) 端子には端子幅(100μm) よりやや狭い寸法で広い窓10を同時に開ける。 8 was applied, a plurality of narrow window 9 of diameter 2.5μm on the source electrode, the tab; opened (TAB Tape Automated Bonding) wide window 10 is slightly smaller size than the terminal width (100 [mu] m) to the terminal at the same time.

【0027】図1(D) において,レジスト膜 8をマスクにして, 緩衝フッ酸でソース電極上のSiN 膜 7をエッチングする。 [0027] In FIG. 1 (D), and the resist film 8 as a mask, to etch the SiN film 7 on the source electrode in buffered hydrofluoric acid. 次いで, 本発明の特徴である熱処理(200℃, Then, is the feature heat treatment (200 ° C. of the present invention,
5 分) を行うと,ソース電極上の狭い窓 9はレジストで覆われる。 5 minutes) is performed to narrow the window 9 on the source electrode is covered with a resist. 図で埋もれた窓開け部のレジストを符号11で示す。 The windowing portion of the resist buried in FIG indicated by reference numeral 11.

【0028】一方, タブ端子上のレジストは丸くなるが, レジスト膜厚に比べて十分広い寸法で開口された広い窓10はレジストで埋まることはない。 On the other hand, although the resist on the tab terminal rounded, wide windows 10 are opened at a sufficiently large size as compared with the resist film thickness never filled with resist. 図1(E) において,タブ端子上の残りのSiN 膜 3のエッチングを続けて, タブ端子部のAl/Cr 膜 2を露出し,基板上に画素電極およびタブ端子電極用のITO(酸化インジウム錫) 膜12 In FIG. 1 (E), followed by the rest of the etching of the SiN film 3 on the tab terminal, to expose the Al / Cr film 2 of the tab terminal, ITO for the pixel electrode and the tab terminal electrode on a substrate (indium tin) film 12
を被着し,パターニングして画素電極とタブ端子電極を形成し,TFT 基板を完成する。 It was deposited, patterned to form the pixel electrode and the tab terminal electrodes, completing the TFT substrate.

【0029】このように, ポジ型フォトレジストの膜厚に相当する寸法で開口された狭い窓は熱処理で塞がることを有効に利用して, 被エッチング膜の膜厚の異なる箇所を同時に窓開けすることができた。 [0029] Thus, a narrow window which is opened by the dimension corresponding to the thickness of the positive photoresist by effectively utilizing the fact that clogged by heat treatment, to open the film simultaneously window to different locations thicknesses of the etched film it could be. その結果, 従来の方法に比べて工程数の大幅な低減, 製造歩留の向上が図られる。 As a result, a significant reduction in the number of steps compared with the conventional method, improvement of the manufacturing yield is achieved.

【0030】また, 別の利点として, 膜厚の異なる箇所を従来例により同時にエッチングするには,タブ端子部がエッチングされるまでのサイドエッチングを考慮して, ソース電極を大きくしなければならず, TFT の開口率の低下は避けられなかったが, 実施例により開口率の低下を最小限に止めることができた。 Further, as another advantage, to simultaneously etched by conventional thickness different locations, taking into account the side etching to the tab terminal is etched, it is necessary to increase the source electrode Although reduction in the aperture ratio of the TFT was inevitable, it was possible to minimize the reduction in the aperture ratio by the examples.

【0031】図5は発明2の実施例を説明する断面図である。 [0031] FIG. 5 is a sectional view for explaining an embodiment of the invention 2. レジスト膜22にパターンを形成した後, アルミニウム(Al)膜32を基板上全面に被着し, リフトオフを行う。 After forming a pattern on the resist film 22, deposited aluminum (Al) film 32 on the entire surface of the substrate, performing a lift-off. Al膜を残すべき開口部が間隔33をおいて相互に大きく離れているとき,通常の方法によると間隔33のが大きすぎるとこの部位のレジストへのリストオフ溶剤の浸透が緩慢になりレジストを完全に除去することはできない。 When opening to leave the Al film is mutually far apart at intervals 33, when according to the usual methods interval 33 to too great a penetration slowed resist list off the solvent to the resist at this site It can not be completely removed.

【0032】これに対して, 実施例では部位34のレジスト膜側面が現れているため,そこから溶剤が浸透しリフトオフが容易である。 [0032] In contrast, in the embodiment since the resist film side portion 34 has appeared, the solvent from which it is easy to penetrate lifted off. また,形成済の配線パターン35と In addition, the already formed of the wiring pattern 35
Al配線32とが直接接触しないため,相互の絶縁性の信頼性を阻害することはない。 Since the Al wiring 32 is not in direct contact, not to inhibit the mutual insulation reliability.

【0033】図6は発明3の実施例を説明する断面図である。 [0033] FIG. 6 is a sectional view for explaining an embodiment of the invention 3. レジストを塗布する際,下地に異物や突起36があると,表面張力によりその周囲にレジストが集まり,レジストの大きな隆起ができる。 When applying the resist, if there is foreign matter or the projection 36 on the base, the resist gathered around it by surface tension, it is significant elevation of the resist. この隆起は厚いため通常の露光量では完全に現像するには十分でなく, 現像後にも残るため最終的に被エッチング膜のパターン欠陥37となってしまう。 This ridge is thicker because not sufficient to fully developed in the normal exposure amount, resulting in a pattern defect 37 ultimately be etched to remain even after development. この際に本発明3を適用すれば欠陥37を除去することができる。 By applying the present invention 3 when this can be removed defect 37.

【0034】次に図4を用いて発明4の実施例を説明する。 [0034] Next, embodiments of the invention 4 will be described with reference to FIG. 開口部24のレジストは1000〜3000Å程度の残膜があると, ウエットエッチングや等方性ドライエッチングに対して相当な耐性があるため,下地の被エッチング膜1 When registration of the aperture 24 there is a residual film of about 1000 to 3000 .ANG, since there is considerable resistance to wet etching or isotropic dry etching, the etching of the underlying film 1
層分程度のエッチングには耐えられる。 The etching of about layers min withstand. 次いで,アッシングまたは酸素ガスを用いたRIE によりこの部分のレジストを除去しても, 他の部分のレジストは十分な膜厚で残すことができるため開口部24に残った被エッチング膜を除去できるまでエッチングを行うことができる。 Then, even if the resist is removed in this portion by RIE using an ashing or oxygen gas, to resist the other portions can be removed to be etched film remaining in the opening 24 it is possible to leave a sufficient thickness it is possible to perform the etching. このように, 開口部24では開口部30より被エッチング膜が露出する時間が短くなるため, サイドエッチ量が大きくなることを防ぐことができる。 Thus, since the time the film to be etched through the opening 30 in the opening 24 is exposed becomes shorter, it is possible to prevent the side etching amount increases.

【0035】 [0035]

【発明の効果】発明1によれぱ, リソグラフィ工程,すなわちレジスト膜のパターニングからエッチングまでの工程数の増加を抑え,被エッチング膜の膜厚が変動してもサイドエッチ量が大きく変動しないでパターニングできるようになった。 Effects of the Invention by the invention 1 Repa, lithography process, namely reducing the step increase in the number of the patterning of the resist film to etching, patterning is the thickness of the etched film does not change even side etching amount is large and varied It became so possible.

【0036】また,発明2によれば, 1層のレジスト膜によって,下地の被エッチング膜の各部に異なるエッチング時間を与えることができサイドエッチ量の制御が容易となる。 Further, according to the invention 2, the resist film of a single-layer, it is easy to control the side etching amount can be given different etching times to each section of the film to be etched underlayer. さらに,局所的にレジスト膜厚が異常に大きくなってしまった箇所を自動的に選択し,現像過程で除去できることが可能であるため,下地エッチング後のパターン欠陥の発生を抑えることができる。 Furthermore, automatically selects the locations had locally resist film thickness becomes abnormally large, since it is possible to be removed in the development process, it is possible to suppress the occurrence of pattern defects after base etching. この結果,パターン形成のための工程数の低減と処理歩留の向上に寄与することができた。 As a result, it was possible to contribute to an improvement in the reduction of the number of steps and processing yield for pattern formation.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】 発明1の実施例を説明する断面図 Sectional view for explaining an embodiment of FIG. 1 Invention 1

【図2】 発明2の原理説明図 The principle illustration of FIG. 2] invention 2

【図3】 発明3の原理説明図 The principle diagram of FIG. 3] invention 3

【図4】 発明4の原理説明図 The principle illustration of FIG. 4 invention 4

【図5】 発明2の実施例を説明する断面図 5 is a cross-sectional view illustrating an embodiment of the invention 2

【図6】 発明3の実施例を説明する断面図 6 is a sectional view illustrating an embodiment of the invention 3

【符号の説明】 DESCRIPTION OF SYMBOLS

1 ガラス基板 2 ゲート電極でAl/Cr 膜 3 ゲート絶縁膜でSiN 膜 4 TFT 動作層でa-Si膜 5 チャネル保護膜でSiN 膜 6 コンタクト層/電極膜で n +型a-Si/Cr 膜 7 保護膜でSiN 膜 8 ポジ型レジスト膜 9 ソース電極上の狭い窓 10 タブ(TAB) 端子の広い窓 11 埋もれた窓開け部のレジスト 12 画素電極およびタブ端子電極用のITO 膜 21 基板 22 レジスト膜 23 遠紫外線露光用マスク 24 レジスト膜の開口部のうち遠紫外線露光される領域 25 レジストパターン全体 26 レジスト膜上に被着されリフトオフされる被膜 27 遠紫外線露光により光架橋された領域 28 レジストパターン全体 29 被エッチング膜 30 レジスト膜の開口部 31 被エッチング膜29の下地膜 32 リフトオフされるAl膜 33 リフトオフされた後のAlパターンの間隔 34 側面が露出したレジストパターン 35 形成済の配線パター N + -type a-Si / Cr film is SiN film 6 contact layer / electrode film by a-Si film 5 channel protection film 1 glass substrate 2 gate electrode in Al / Cr film 3 gate insulating film of SiN film 4 TFT active layer 7 protective film SiN film 8 positive resist film 9 narrow windows 10 tabs (tAB) ITO film 21 substrate 22 resist for resist 12 pixel electrode and the tab terminal electrodes of the wide windows 11 buried windowing unit of the terminal on the source electrode region 28 resist pattern photocrosslinked by applied by coating 27 far ultraviolet exposure is lifted off onto a region 25 resist pattern across 26 resist film deep UV exposure of the opening of the film 23 deep UV exposure mask 24 resist film total 29 to be etched film 30 resist film opening 31 underlying film 32 lifted-off the Al film 33 lifted off by the resist pattern 35 has been formed in the wiring pattern spacing 34 side of the Al pattern is exposed after the film to be etched 29 36 レジスト下地の異物または突起 37 被エッチング膜が残って形成されるパターン欠陥 36 pattern defects resist underlayer of foreign matter or protrusions 37 to be etched film is left formed

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl. 5識別記号 庁内整理番号 FI 技術表示箇所 G03F 7/26 511 7124−2H 7/38 7124−2H 7352−4M H01L 21/30 361 K ────────────────────────────────────────────────── ─── front page continued (51) Int.Cl. 5 in identification symbol Agency Docket No. FI art display portion G03F 7/26 511 7124-2H 7/38 7124-2H 7352-4M H01L 21/30 361 K

Claims (4)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 フォトレジスト膜をマスクにしたエッチングにより, 被エッチング膜の膜厚の異なる箇所に同時に窓開けを行う際に, 該被エッチング膜の膜厚の薄い箇所の窓開けがなされた後, 熱処理により膜厚の薄い箇所の窓を該レジストで覆い, 続いてエッチングを行い該被エッチング膜の膜厚の厚い箇所の窓開けを行うことを特徴とするパターン形成方法。 1. A by etching using the photoresist film as a mask, when performing open windows simultaneously at different locations of the thickness of the etched film, after opening film thinner portion of the window of thick 該被 etched film is made , covering the thin portion of the window film thickness in the resist by heat treatment, followed by pattern formation method characterized by performing the open window in the thickness of the thick portion of the 該被 etching film etched.
  2. 【請求項2】 基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光と該露光部の一部に遠紫外線露光とを行い,現像して該遠紫外線露光部の開口部にレジスト残膜を残したレジストパターンを形成し,次いで該基板上に被膜を被着し,該レジスト残膜上の該被膜をリフトオフする過程を有することを特徴とするパターン形成方法。 2. A resist was applied with both a positive photosensitive base polymer that can be alkali developed on the substrate and a negative photosensitive, far ultraviolet part of the near-ultraviolet exposure and the exposure unit to form a positive pattern performed and exposed and developed to form a resist pattern leaving the residual resist film on the opening of the distal ultraviolet exposure unit, then a film is deposited on the substrate, lift off the coating film on the resist remaining film pattern forming method characterized by having a step of.
  3. 【請求項3】 基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光を行い,現像してレジストパターンを形成し,次いで,該基板全面に近紫外線露光と遠紫外線露光とを行い,再度現像を行う過程を有することを特徴とするパターン形成方法。 3. A resist is applied with both a positive photosensitive base polymer that can be alkali developed on the substrate and a negative photosensitive performs near UV exposure to form a positive pattern, developed to form a resist pattern pattern forming method, and then subjected to a deep UV exposure and near ultraviolet exposure to the substrate whole surface, characterized by having a process of performing development again.
  4. 【請求項4】 基板上にアルカリ現像が可能なベースポリマにポジ感光性とネガ感光性の両方を有するレジストを塗布し,ポジパターンを形成する近紫外線露光と該露光部の一部に遠紫外線露光とを行い,現像して該遠紫外線露光部の開口部にレジスト残膜を残したレジストパターンを形成し,次いで,該レジストパターンをマスクにして下地膜をエッチングし,次いで,該レジスト残膜を除去し,再度該下地膜をエッチングする過程を有することを特徴とするパターン形成方法。 4. A resist is applied with both a positive photosensitive base polymer that can be alkali developed on the substrate and a negative photosensitive, far ultraviolet part of the near-ultraviolet exposure and the exposure unit to form a positive pattern It performs an exposure, the developed resist pattern leaving a residual resist film to the opening of the distal ultraviolet exposure unit to form, then the base film is etched by using the resist pattern as a mask, and then, the residual resist film removal of the pattern forming method characterized by comprising the step of etching the lower fabric layer again.
JP4286503A 1992-10-26 1992-10-26 Pattern forming method Withdrawn JPH06140296A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41363E1 (en) 1995-11-21 2010-06-01 Samsung Electronics Co., Ltd. Thin film transistor substrate
US7787087B2 (en) 1998-05-19 2010-08-31 Samsung Electronics Co., Ltd. Liquid crystal display having wide viewing angle
US9041891B2 (en) 1997-05-29 2015-05-26 Samsung Display Co., Ltd. Liquid crystal display having wide viewing angle

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE41363E1 (en) 1995-11-21 2010-06-01 Samsung Electronics Co., Ltd. Thin film transistor substrate
US9041891B2 (en) 1997-05-29 2015-05-26 Samsung Display Co., Ltd. Liquid crystal display having wide viewing angle
US7787087B2 (en) 1998-05-19 2010-08-31 Samsung Electronics Co., Ltd. Liquid crystal display having wide viewing angle
US7787086B2 (en) 1998-05-19 2010-08-31 Samsung Electronics Co., Ltd. Liquid crystal display having wide viewing angle
US8054430B2 (en) 1998-05-19 2011-11-08 Samsung Electronics Co., Ltd. Liquid crystal display having wide viewing angle
US8400598B2 (en) 1998-05-19 2013-03-19 Samsung Display Co., Ltd. Liquid crystal display having wide viewing angle
US8711309B2 (en) 1998-05-19 2014-04-29 Samsung Display Co., Ltd. Liquid crystal display having wide viewing angle

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