JPH0578843A - Chemical vapor growth method of copper thin film - Google Patents

Chemical vapor growth method of copper thin film

Info

Publication number
JPH0578843A
JPH0578843A JP31559091A JP31559091A JPH0578843A JP H0578843 A JPH0578843 A JP H0578843A JP 31559091 A JP31559091 A JP 31559091A JP 31559091 A JP31559091 A JP 31559091A JP H0578843 A JPH0578843 A JP H0578843A
Authority
JP
Japan
Prior art keywords
chemical vapor
copper
film
raw material
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31559091A
Other languages
Japanese (ja)
Inventor
Toshiro Maruyama
敏朗 丸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP31559091A priority Critical patent/JPH0578843A/en
Publication of JPH0578843A publication Critical patent/JPH0578843A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To form a high-quality Cu film without generating corrosive gas by using copper dipivaloyl methanite as a raw material and using hydrogen as reactive gas in the case of forming the Cu film by a chemical vapor growth method. CONSTITUTION:Copper dipivaloyl methanite 6 used as a raw material is placed in a vaporizer 5 of the upstream side of the inside of a reactor 7 fitted with a heater 8 in the outer circumference. A base plate 9 made of borosilicate glass is arranged in the downstream side. Both gaseous N2 1 used as carrier gas and gaseous H2 2 used as reactive gas are supplied while holding the inside of the vaporizer 5 at 220-210 deg.C by the heater 8. Gaseous H2 is allowed to react with copper dipivaloyl methanite vaporized at high temperature. A reduced Cu film having high purity is formed on the surface of the base plate 9 at 220-400 deg.C in the inside of the reactor 7.

Description

【発明の詳細な説明】Detailed Description of the Invention

【０００１】[0001]

【産業上の利用分野】本発明は、化学気相成長方法に関
し、さらに詳しくは、銅の膜の製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition method, and more particularly to a method for producing a copper film.

【０００２】[0002]

【従来の技術】化学気相成長（Ｃｈｅｍｉｃａｌ Ｖａ
ｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ、ＣＶＤ）法は、高性能
膜を量産できる方法として広く実用化されている。銅の
膜の化学気相成長法の原料として塩化銅が広く用いられ
ている。2. Description of the Related Art Chemical Vapor Deposition (Chemical Vapor
The por deposition (CVD) method has been widely put into practical use as a method capable of mass-producing high-performance films. Copper chloride is widely used as a raw material for chemical vapor deposition of copper films.

【０００３】[0003]

【発明が解決しようとする課題】しかし、薄膜合成時に
反応器材料に対する腐食性の強い塩化水素ガスを発生す
る。本発明は上記難点に鑑みてなされたものであり、そ
の目的とするところは、取り扱いやすい原料を用いて、
腐食性のガスを発生することなく、銅の膜を容易に合成
し得る新たな化学気相成長法の提供にある。However, hydrogen chloride gas, which is highly corrosive to the reactor material, is generated during thin film synthesis. The present invention has been made in view of the above-mentioned difficulties, and an object thereof is to use a raw material that is easy to handle,
It is to provide a new chemical vapor deposition method capable of easily synthesizing a copper film without generating a corrosive gas.

【０００４】[0004]

【課題を解決するための手段】ジピバロイルメタナト銅
を原料として用い、反応ガス、例えば、水素を原料ガス
に加えることにより、被処理物表面に銅の膜を成長させ
ることを特徴とする化学気相成長方法。[Means for Solving the Problems] Using dipivaloylmethanatocopper as a raw material, a reaction gas, for example, hydrogen is added to the raw material gas to grow a copper film on the surface of an object to be treated. Chemical vapor deposition method.

【０００５】[0005]

【作用】本発明方法によるときは、取り扱い上も安全な
原料を用いて、少ない工程で、腐食性のガスを発生する
ことなく、優れた銅の膜を容易にに成長させることがで
きる。According to the method of the present invention, an excellent copper film can be easily grown by using a raw material which is safe in handling and in a small number of steps without generating a corrosive gas.

【実施例】以下、本発明の実施例について説明する。図
１に成膜装置の模式図を示す。原料としてジピバロイル
メタナト銅を用い、これを２２０〜２４０℃に保った気
化器内で気化し、窒素ガス（流量３００ｃｍ３／ｍｉ
ｎ）をキャリアガスとしてこれを反応器内に導入した。
反応ガスとして水素ガス（流量１００〜９００ｃｍ３／
ｍｉｎ）を用い、これをノズル中で原料ガスと混合し、
大気圧下で成膜した。基板として、硼珪酸ガラスを用い
た。反応温度２２０〜４００℃で反応させたところ、金
属光沢を持ち高い導電性を示す結晶性の銅膜が得られ
た。図２に合成された薄膜のＸ線回折パターンの１例を
示す。図３に薄膜の成膜速度を反応温度に対して示す。
以上本発明につき好適な実施例を挙げて種々説明した
が、本発明はこの実施例に限定されるものではなく、発
明の精神を逸脱しない範囲内で多くの改変を施し得るの
はもちろんのことである。EXAMPLES Examples of the present invention will be described below. FIG. 1 shows a schematic diagram of a film forming apparatus. Copper dipivaloylmethanato was used as a raw material, which was vaporized in a vaporizer maintained at 220 to 240 ° C., and nitrogen gas (flow rate 300 cm 3 / mi
n) was introduced as a carrier gas into the reactor.
Hydrogen gas as reaction gas (flow rate 100-900 cm 3 /
min), which is mixed with the raw material gas in the nozzle,
The film was formed under atmospheric pressure. Borosilicate glass was used as the substrate. When the reaction was carried out at a reaction temperature of 220 to 400 ° C., a crystalline copper film having metallic luster and high conductivity was obtained. FIG. 2 shows an example of the X-ray diffraction pattern of the synthesized thin film. FIG. 3 shows the deposition rate of the thin film with respect to the reaction temperature.
Although the present invention has been variously described with reference to the preferred embodiments, the present invention is not limited to these embodiments, and many modifications can be made without departing from the spirit of the invention. Is.

【図面の簡単な説明】[Brief description of drawings]

【図１】装置の概略図である。FIG. 1 is a schematic diagram of an apparatus.

【図２】合成された膜のＸ線回折パターンの１例を示す
図である。FIG. 2 is a diagram showing an example of an X-ray diffraction pattern of a synthesized film.

【図３】薄膜の成膜速度を反応温度に対して示した図で
ある。FIG. 3 is a diagram showing a film forming rate of a thin film with respect to a reaction temperature.

【符号の説明】[Explanation of symbols]

１ キャリアガスボンベ ２ 反応ガスボンベ ３ ガス流量制御器 ４ 温度検出器 ５ 気化器 ６ 原料 ７ 反応器 ８ ヒーター ９ 被処理物 1 carrier gas cylinder 2 reaction gas cylinder 3 gas flow controller 4 temperature detector 5 vaporizer 6 raw material 7 reactor 8 heater 9 object to be treated

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 ジピバロイルメタナト銅を原料として用
い、反応ガスを原料ガスに加えることにより、被処理物
表面に銅の膜を成長させることを特徴とする化学気相成
長方法。1. A chemical vapor deposition method comprising using copper dipivaloylmethanato as a raw material and adding a reaction gas to the raw material gas to grow a copper film on the surface of the object to be treated. 【請求項２】 反応ガスが水素である特許請求範囲第１
項記載の化学気相成長方法。2. The method according to claim 1, wherein the reaction gas is hydrogen.
The chemical vapor deposition method according to the item.
JP31559091A 1991-09-21 1991-09-21 Chemical vapor growth method of copper thin film Pending JPH0578843A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31559091A JPH0578843A (en) 1991-09-21 1991-09-21 Chemical vapor growth method of copper thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31559091A JPH0578843A (en) 1991-09-21 1991-09-21 Chemical vapor growth method of copper thin film

Publications (1)

Publication Number Publication Date
JPH0578843A true JPH0578843A (en) 1993-03-30

Family

ID=18067187

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31559091A Pending JPH0578843A (en) 1991-09-21 1991-09-21 Chemical vapor growth method of copper thin film

Country Status (1)

Country Link
JP (1) JPH0578843A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501475B2 (en) 2004-05-07 2009-03-10 Asahi Kasei Chemicals Corporation Aqueous resin dispersion for adhesive and composition thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7501475B2 (en) 2004-05-07 2009-03-10 Asahi Kasei Chemicals Corporation Aqueous resin dispersion for adhesive and composition thereof

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