JPH0572040B2 - - Google Patents

Info

Publication number
JPH0572040B2
JPH0572040B2 JP61050423A JP5042386A JPH0572040B2 JP H0572040 B2 JPH0572040 B2 JP H0572040B2 JP 61050423 A JP61050423 A JP 61050423A JP 5042386 A JP5042386 A JP 5042386A JP H0572040 B2 JPH0572040 B2 JP H0572040B2
Authority
JP
Japan
Prior art keywords
power supply
circuit
chip
potential
reference potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61050423A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62208496A (ja
Inventor
Yasushi Sakui
Tatsuo Igawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Priority to JP61050423A priority Critical patent/JPS62208496A/ja
Publication of JPS62208496A publication Critical patent/JPS62208496A/ja
Publication of JPH0572040B2 publication Critical patent/JPH0572040B2/ja
Granted legal-status Critical Current

Links

JP61050423A 1986-03-10 1986-03-10 Mos集積回路 Granted JPS62208496A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61050423A JPS62208496A (ja) 1986-03-10 1986-03-10 Mos集積回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61050423A JPS62208496A (ja) 1986-03-10 1986-03-10 Mos集積回路

Publications (2)

Publication Number Publication Date
JPS62208496A JPS62208496A (ja) 1987-09-12
JPH0572040B2 true JPH0572040B2 (cs) 1993-10-08

Family

ID=12858456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61050423A Granted JPS62208496A (ja) 1986-03-10 1986-03-10 Mos集積回路

Country Status (1)

Country Link
JP (1) JPS62208496A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE40132E1 (en) 1988-06-17 2008-03-04 Elpida Memory, Inc. Large scale integrated circuit with sense amplifier circuits for low voltage operation
US5297097A (en) 1988-06-17 1994-03-22 Hitachi Ltd. Large scale integrated circuit for low voltage operation
JP3569310B2 (ja) 1993-10-14 2004-09-22 株式会社ルネサステクノロジ 半導体記憶装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61131617A (ja) * 1984-11-30 1986-06-19 Toshiba Corp Mos型半導体装置

Also Published As

Publication number Publication date
JPS62208496A (ja) 1987-09-12

Similar Documents

Publication Publication Date Title
KR940003891B1 (ko) 오동작 방지수단을 갖는 반도체장치
KR100467918B1 (ko) 낮은동작전압에서유효한전압변환회로를구비한반도체집적회로
JP3085782B2 (ja) 半導体記憶装置
US6229753B1 (en) Semiconductor memory device capable of accurate control of internally produced power supply potential
US6441669B2 (en) Internal power-source potential supply circuit, step-up potential generating system, output potential supply circuit, and semiconductor memory
KR940010104A (ko) 기준전압 발생회로 및 내부강압 변환기
KR900004725B1 (ko) 전원전압 강하회로
US6392944B1 (en) Semiconductor memory device capable of performing stable sensing operation even under low power supply voltage environment
JP2002083872A (ja) 半導体集積回路
JP4397062B2 (ja) 電圧発生回路および半導体記憶装置
JPS6284490A (ja) 半導体記憶装置
JP3186034B2 (ja) 基準電圧発生回路
WO1999030325A1 (fr) Memoire a semiconducteurs, dispositif a semiconducteurs et appareil electronique utilisant ledit dispositif a semiconducteurs
JP2685469B2 (ja) 半導体装置
JPH0572040B2 (cs)
KR100230372B1 (ko) 반도체 메모리 장치의 내부 전압 변환기
JP3294590B2 (ja) 半導体装置
JP3641345B2 (ja) 基板バイアス効果を利用した遅延回路
JP3047605B2 (ja) ダイナミックram
JP3402641B2 (ja) ダイナミック型半導体記憶装置
JP3524531B2 (ja) 半導体装置
JPH0785664A (ja) ダイナミック型mosメモリ
JPH0737381A (ja) 半導体集積回路装置
KR930005977B1 (ko) 오동작 방지수단을 갖는 반도체장치
KR0174818B1 (ko) 반도체장치

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees