JPH0546983B2 - - Google Patents

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Publication number
JPH0546983B2
JPH0546983B2 JP61219904A JP21990486A JPH0546983B2 JP H0546983 B2 JPH0546983 B2 JP H0546983B2 JP 61219904 A JP61219904 A JP 61219904A JP 21990486 A JP21990486 A JP 21990486A JP H0546983 B2 JPH0546983 B2 JP H0546983B2
Authority
JP
Japan
Prior art keywords
insulator
layer
locations
metal
metallization
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP61219904A
Other languages
English (en)
Other versions
JPS62102544A (ja
Inventor
Minnchii Cho Meranii
Edowaado Kuronin Jon
Resurii Gasurii Uiriamu
Ueringu Kaanta Kaataa
Jiin Rusaa Baabara
Jon Patoritsuku Uiriamu
Arisu Perii Kyasariin
Ranbaato Sutandorei Chaaruzu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS62102544A publication Critical patent/JPS62102544A/ja
Publication of JPH0546983B2 publication Critical patent/JPH0546983B2/ja
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Description

【発明の詳細な説明】 Ａ 産業上の利用分野 本発明は総括的に、高性能VLSI半導体チツプ
の製造に関するものであり、特に導電性ラインお
よびスタツド・バイア金属接点を同時に形成する
化学−機械的研磨手法にしたがつて基板上に同一
平面の多層金属絶縁層構造を作成する方法に関す
るものである。
Ｂ 従来技術 半導体チツプはデバイスのアレイからなつてお
り、その接点は配線金属ストライプのパターンに
よつて互いに接続されている。VLSIチツプにお
いて、これらの金属パターンは多層化され、絶縁
体の層によつて分離されている。金属配線パター
ンの異なるレベル間の相互接続は、孔（ないしバ
イア・ホール）によつて行われ、これらの孔は絶
縁体の前記層を介してエツチングされている。典
型的なチツプは１つまたは２つの配線レベルで設
計されているが、現時点の最新技術では３つの配
線レベルが使用されている。回路の費用および性
能に関する関件は、製造工程について、処理工程
が増えても、補足的な配線レベルを追加したもの
のコストが競合可能なものでなければならないと
いうことを絶えず課している。しかしながら、バ
イア・ホールを使用する既存の手法には各種の制
限があり、また第６図から明らかなとおり、メタ
ライゼーシヨンの数が増加すると、配線の難度が
増加するという欠点がある。
第６図に示す半導体構造２０はこの現時点の技
術の典型的な例である。この構造は所定の伝導型
を有するシリコン基板１１で構成されており、該
基板はその上に酸化シリコン（SiO2）のパター
ン化された第１絶縁層１２を有している。第１レ
ベルのメタライゼーシヨンは金属ランド１３で表
されており、これはバイア・ホール１４を介して
基板の領域１５と接触している。これは、たとえ
ばオーム接点として、バイポーラ・トランジスタ
（図示せず）のエミツタ領域と接触している。
金属ランド１６で表わされている第２レベルの
メタライゼーシヨンは、第２絶縁層１８のバイ
ア・ホール１７を介して金属ランド１３と接触し
ている。この構造は第３絶縁層１９によつてパツ
シベーシヨンされている。第１図に示す構造は比
例した尺度のものではないが、この構造は平坦と
は程遠い、極めて不規則な表面を例示しており、
これは標準的な処理で得られたものである。
このような平坦でない構造で周知の問題は、第
１に第１および第２レベルのメタライゼーシヨン
の間の絶縁層が薄くなつたことによる、これらの
レベル間の位置Ａにおける潜在的な短絡の危険で
あり、第２に位置Ｂにおいて金属層が薄くなつた
こと（いわゆる、ネツキング効果）による、位置
Ｂにおける潜在的な開回路の危険である。これら
の危険はこの業界で必要とされる高水準の信頼性
では受け入れられないものである。したがつて、
バイア・ホールを改善し、このような不規則な表
面を平坦化するという大きな問題を解決すること
が、当面の重要な課題となつている。
典型的な場合、所定のパターン化された金属レ
ベルを作成し、かつ所定のレベルからパターン化
された金属レベルに重畳したスタツド・バイアま
でのスタツド・バイア接触を行わせるのに、別個
の方法が使用されている。このような方法の一例
が、Ｇ・Ｔ・チウ他（G.T.Chiu et al）の「多層
金属技術の方法」IBMテクニカル・デイスクロ
ージヤ・ブルテン、Vol.25、No.10、1983年３月、
pp.5309に記載されている。記載されている手法
によれば、低いレベルの金属接点ないし導電パタ
ーンが絶縁層ないに形成され、スタツド・コネク
タが低いレベルの金属パターンの剪定された位置
に製造され、絶縁体がスタツド・コネクタの周囲
に置かれ、重畳絶縁層が沈着され、パターン化さ
れ、高いレベルの金属その他の導電パターンが重
畳絶縁層に置かれる。上記の手法は複雑で費用が
かかるだけでなく、個々の金属およびスタツド・
レベルの平坦化は達成困難である。
Ｃ 発明が解決しようとする問題点 この発明の目的は個々の金属およびスタツド・
レベルの平坦化を容易ならしめることにある。
Ｄ 問題点を解決するための手段 パターン化された導電ラインをスタツド・バイ
アと共にVLSIチツプの構成部材を相互接続する
ための、簡素化された多重レベル／絶縁体方法に
よつて、同時に形成する。絶縁体の第１平坦化層
が第１レベルのパターン化導電材料上に沈積さ
れ、これに対して接点が選択的に確立される。第
１層は次いで、エツチング停止材によつて覆われ
る。接点孔が周知のフオトリソグラフイを用い
て、スタツド・コネクタが必要な個所のエツチン
グ停止材に画定される。絶縁体の第１層の厚さは
希望するスタツドの高さと等しくなされる。絶縁
体の第１層は、この時点ではエツチングされな
い。
次に、多重レベル構造の第２レベルのパターン
化導電材料の厚さに等しい厚さの絶縁体の第２平
坦化層がエツチング停止材上に沈積される。第２
層の絶縁体を次いで、エツチング停止材のところ
までフオトリソグラフイによつてエツチングし、
希望する配線チヤネルを形成するが、これらチヤ
ネルのうち若干数のものはエツチング停止材に以
前形成された接点孔と整合する。接点孔が露出し
ている個所において、エツチングが絶縁体の第１
層中まで続けられ、下方にあるパターン化された
導電材料の第１レベルを露出させる。
絶縁体の第１および第２層のそれぞれにエツチ
ングされたチヤネルおよびバイア・ホールを、メ
タライゼーシヨンによつて過充填する。絶縁体の
第２層の頂面にあるが、チヤネルやバイア・ホー
ル内にはない過剰のメタライゼーシヨンをエツチ
ングまたは化学−機械的研磨によつて除去する。
エツチングを用いた場合には、過充填されたメタ
ライゼーシヨンの沈積に用いたものと同じ工具を
採用して、過剰メタライゼーシヨンのその場所で
のプラズマ・モード・エツチングを行うことがで
きる。1985年10月28日出願の米国特許出願第
791860号の教示するところにしたがつて、化学−
機械的研磨を遂行することができる。
Ｅ 実施例 第１図に示す構造１は、典型的な場合、パター
ン化された第１レベルの導電体４上に沈積された
誘電体の第１平坦化層３で構成された基板２を包
含している。一般的な場合、導電体４は絶縁体３
中を完全に貫通していても、していなくてもかま
わないものであり、絶縁体は次いで集積回路チツ
プ上に配置される。完全に貫通している場合、導
電体４はチツプに形成されたデバイス（図示せ
ず）に金属学的に接触することになる。貫通して
いない場合（図示の場合）、導電体４がチツプ表
面から絶縁されたメタライゼーシヨンのレベルと
なることになる。周知のように、絶縁体３は一般
に平坦化されたSiO2またはリフローしたリンケ
イ酸塩ガラスであり、導体４は典型的な場合、銅
をドープしたアルミニウムまたはドープされた多
結晶シリコンである。絶縁体３および導電体４の
個々の性質は本発明に関するものではない。
スパツタされた石英などの絶縁体の第１平坦化
層５が基板２上に、スタツド・バイア接続の希望
する高さに等しい厚さで沈積される。
酸化アルミニウムなどのエツチング停止材６の
薄層が沈積され、パターン化されて、下にあるメ
タライゼーシヨン・レベル４と、後で沈積される
上にあるメタライゼーシヨン・レベル（第１図に
は図示せず）との間に、スタツド・バイア接続を
形成する各場所に窓７をもたらす。上にあるメタ
ライゼーシヨン・レベルを設けるにあたつて、た
とえばスパツタされた石英または複合Si3N4／
SiO2層である絶縁体の第２平坦化層８が、第２
図に示すように、第１図の構造上に配置される。
層８の厚さは層８を完全に貫通してエツチングさ
れるチヤネルに形成されるメタライゼーシヨンの
重畳レベルの厚さを決定する。
標準的なフオトリソグラフイによつて、チヤネ
ルが層８上のレジスト層（図示せず）に画定され
る。下にあるメタライゼーシヨン４に対するスタ
ツド・バイア接続を希望する場所で、層８のそれ
ぞれのチヤネル開口をエツチング停止層６の孔
（窓７などの）と整合させなければならない。層
８のエツチングはバイアが必要ないエツチング停
止層で終了する。層８がスパツタされた石英であ
つて、エツチング停止層がAl2O3である場合に
は、CF4／O2を使用した反応性イオン・エツチン
グが適している。
チヤネルの画定後、メタライゼーシヨン９の重
畳レベル、たとえばAl−Cu，Al−Siまたはタン
グステンが、第４図に示すように、第３図の構造
上に沈積される。メタライゼーシヨン９の厚さは
少なくとも、スタツド・バイア接続１０の高さ
（層５および６の厚さに等しい）プラス下にある
メタライゼーシヨン５の厚さと同程度のものであ
る。層５がCVDタングステンの場合には、タン
グステンを沈積するのに使用したものと同じ工具
を使つて、タングステンをその場でプラズマ・モ
ードでエツチングし、層８および９の表面を共面
化する。別の方法としては、前述の米国特許出願
第791860号で教示された化学−機械的方法によつ
て、層９を平坦化してもよい。その結果を第５図
に示す。
金属パターン９が最終的に金属レベルである場
合には、最終的な薄いパツシベーシヨン絶縁体が
このパターンの上に必要である。パターン９の配
線レベルの後で、１つまたはそれ以上の付加的な
配線レベルが設けられる場合には、上述のスタツ
ド・バイアの工程および重畳メタライゼーシヨン
の工程、それに関連する絶縁層の工程が、付加的
な配線レベルの各々に対して繰り返される。
第１図〜第５図の助けを借りて説明した好まし
い方法は、エツチング停止層６ならびに絶縁層８
および９を使用するものであるが、これに付帯す
る余分な工程を行わなくとも、この方法を実施し
て満足できる結果を得ることもできる。あるいは
また、層５と８の厚さを合計した厚さの単一の層
を、基板上に沈積することができる。この場合、
同じフオトリソグラフイを使用し（第３図の絶縁
体８にパターンを生成した場合に）、第５図の導
電体９に対する深さが希望するものになつた場合
に、単一の絶縁体層に対するエツチングを停止す
ることができる。第１図の窓７を開けるのに使用
したものに対応する付加的なフオトリソグラフイ
によつて、単一の絶縁層の付加的なエツチング
（必要な個所にバイア・ホールを開けるための）
を行うことができる。次いで、第４図および第５
図のメタライゼーシヨンおよび平坦化の工程と同
じ工程を、適用することができる。
好ましい実施例はさらに絶縁層５および８にス
パツタされた石英または複合Si3N4／SiO2を使用
するものであるが、他の絶縁物質、たとえばスピ
ン・オン・ポリイミドも適したものである。ポリ
イミドを絶縁体として使用した場合、適するエツ
チング停止層材料には、スピン・オン・ガラスお
よびプラズマ・チツ化物が含まれる。
Ｆ 発明の効果 以上のように、この発明によれば、簡単な方法
により個々の金属およびスタツド・レベルの平坦
化が達成される。
【図面の簡単な説明】
第１図〜第５図は、本発明の方法の工程におけ
る連続した段階で生じる、基板上への多重レベル
金属／絶縁体フイルムの形成を示す、単純化した
一連の断面図である。第６図は、従来の標準的な
方法で製造され、典型的な非平坦化表面をなして
いる多層金属半導体構造の略断面図である。 ２……基板、３……誘電体の第１平坦化層、４
……第１レベルの導電体、５……絶縁体の第１平
坦化層、６……エツチング停止材、７……窓、８
……絶縁体の第２平坦化層、９……メタライゼー
シヨン、１０……スタツド・バイア接続。

Claims (1)

  1. 【特許請求の範囲】 １ 被覆金属層の形成と同時に、絶縁体層を貫通
    するスタツド・バイア接続を形成する多層金属絶
    縁体構造の形成方法であつて、 (a) 金属層を表面に配置された基板を用意する工
    程と、 (b) 上記基板上に絶縁体を配置する工程と、 (c) 上記被覆金属層を配置するべき第１の箇所
    で、上記絶縁体を完全には貫通しないように選
    択的に上記絶縁体を除去する工程と、 (d) 上記第１の箇所のどれかと整合する、上記ス
    タツド・バイア接続を配置するべき第２の箇所
    で、上記絶縁体を完全に貫通するように選択的
    に上記絶縁体を除去する工程と、 (e) 上記第１の箇所では上記被覆金属層を形成す
    ると同時に、上記第２の箇所では上記スタツ
    ド・バイア接続を形成するように、上記絶縁体
    上に金属を付着する工程と、 (f) 上記スタツド・バイア接続の表面と、上記被
    覆金属層の表面と、上記絶縁体の表面がほぼ同
    一平面になるように、上記絶縁体上の上記第１
    の箇所以外の箇所に付着されている上記被覆金
    属層を、化学機械研摩技術によつて除去する工
    程を有する、 多層金属絶縁体構造の形成方法。
JP61219904A 1985-10-28 1986-09-19 多層金属絶縁体構造の形成方法 Granted JPS62102544A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/791,887 US4789648A (en) 1985-10-28 1985-10-28 Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias
US791887 1991-11-14

Publications (2)

Publication Number Publication Date
JPS62102544A JPS62102544A (ja) 1987-05-13
JPH0546983B2 true JPH0546983B2 (ja) 1993-07-15

Family

ID=25155097

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61219904A Granted JPS62102544A (ja) 1985-10-28 1986-09-19 多層金属絶縁体構造の形成方法

Country Status (7)

Country Link
US (1) US4789648A (ja)
EP (1) EP0224013B1 (ja)
JP (1) JPS62102544A (ja)
AT (1) ATE50379T1 (ja)
BR (1) BR8604547A (ja)
CA (1) CA1248641A (ja)
DE (1) DE3669016D1 (ja)

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EP0224013A2 (en) 1987-06-03
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EP0224013B1 (en) 1990-02-07
JPS62102544A (ja) 1987-05-13
EP0224013A3 (en) 1987-09-30
ATE50379T1 (de) 1990-02-15
BR8604547A (pt) 1987-05-26
US4789648A (en) 1988-12-06

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