JPH0545077B2 - - Google Patents
Info
- Publication number
- JPH0545077B2 JPH0545077B2 JP6510686A JP6510686A JPH0545077B2 JP H0545077 B2 JPH0545077 B2 JP H0545077B2 JP 6510686 A JP6510686 A JP 6510686A JP 6510686 A JP6510686 A JP 6510686A JP H0545077 B2 JPH0545077 B2 JP H0545077B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- waveguide layer
- stripe structure
- mesa stripe
- active waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010410 layer Substances 0.000 claims description 83
- 239000004065 semiconductor Substances 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 230000012010 growth Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005253 cladding Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Description
【発明の詳細な説明】
「産業上の利用分野」
この発明は、光通信の光源等として用いられる
分布反射型半導体レーザおよびその製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION "Field of Industrial Application" The present invention relates to a distributed reflection semiconductor laser used as a light source for optical communication, and a method for manufacturing the same.
「従来の技術」
最近、分布反射型半導体レーザの一種として、
BIGレーザと呼ばれる新しいタイプの半導体レー
ザが開発されている。第５図は、このBIGレーザ
の構成例を示す断面斜視図である。図において、
１はｐ−InP基板、２はｐ−InPバツフア層、３
はλg＝1.55μｍのInGaAsP活性導波路層、４はλg
＝1.0〜1.2μｍのｎ−InGaAsP（またはｎ−InP）
保護層、５はλg＝1.3〜1.4μｍｍのｎ−InGaAsP
外部導波路層、６はｎ−InPクラツド層、７は
SiO2絶縁膜、８ａ，８ｂは各々金属電極、９は
金属電極８ａ用の窓部、１０は分布ブラツグ反射
器（回折格子）である。また、１１〜１３は各々
埋込層を構成するｎ−Inp層、ｐ−InP層および
ｎ−InGaAsP層である。また、図に示すＸは活
性領域、Ya、Ybは外部導波路領域である。"Conventional technology" Recently, as a type of distributed reflection semiconductor laser,
A new type of semiconductor laser called a BIG laser has been developed. FIG. 5 is a cross-sectional perspective view showing an example of the configuration of this BIG laser. In the figure,
1 is a p-InP substrate, 2 is a p-InP buffer layer, 3
is InGaAsP active waveguide layer with λg = 1.55μm, 4 is λg
=1.0~1.2μm n-InGaAsP (or n-InP)
Protective layer 5 is n-InGaAsP with λg = 1.3 to 1.4 μmm
External waveguide layer, 6 is n-InP cladding layer, 7 is
A SiO 2 insulating film, 8a and 8b are metal electrodes, 9 is a window for the metal electrode 8a, and 10 is a distributed Bragg reflector (diffraction grating). Further, 11 to 13 are an n-Inp layer, a p-InP layer, and an n-InGaAsP layer, which constitute buried layers, respectively. Moreover, X shown in the figure is an active region, and Ya and Yb are external waveguide regions.
ここで、上記構成において、
ns：ｐ−InP基板１およびｎ−InPクラツド層６
の屈折率
nact：活性導波路層３の屈折率
ncov：保護層４の屈折率
next：外部導波路層５の屈折率
tact：活性導波路層３の厚さ
tcov：保護層４の厚さ
text：外部導波路層５の厚さ
とした場合に、
nact＞next＞ncov≧ns ……(1)
となるようにし、かつ、この条件のもとで各層の
物質組成および厚さtact、tcov、textを適切に設
定することにより、伝播定数および電界分布の整
合を得ることが可能となる。そして、実験結果に
よれば、活性導波路層３と外部導波路層５との間
の結合効率を90％以上、100％に近い値とするこ
とができた。 Here, in the above configuration, ns: p-InP substrate 1 and n-InP cladding layer 6
refractive index nact: refractive index of active waveguide layer 3 ncov: refractive index of protective layer 4 next: refractive index of outer waveguide layer 5 tact: thickness of active waveguide layer 3 tcov: thickness of protective layer 4 text : When the thickness of the external waveguide layer 5 is set, nact>next>ncov≧ns...(1), and under this condition, the material composition and thickness of each layer tact, tcov, text By appropriately setting , it is possible to match the propagation constant and electric field distribution. According to the experimental results, the coupling efficiency between the active waveguide layer 3 and the external waveguide layer 5 could be set to a value of 90% or more and close to 100%.
このように、第５図に示す構成によれば、活性
導波路層３と外部導波路層５との間の結合を極め
て良好に行うことができるから、反射や散乱等の
発生をほとんどなくすことができ、これによつ
て、高効率で高安定な単一モードのレーザ発振を
行うことができる。なお、第５図に示す構成にお
いて各層の導電性（ｐ型とｎ型）を反転させて
も、全く同様の効果が得られる。ただし、この場
合にはキヤツプ層とZn拡散領域が必要になる。 As described above, according to the configuration shown in FIG. 5, the coupling between the active waveguide layer 3 and the external waveguide layer 5 can be achieved extremely well, so that the occurrence of reflection, scattering, etc. can be almost eliminated. As a result, highly efficient and highly stable single mode laser oscillation can be performed. Note that even if the conductivity (p type and n type) of each layer is reversed in the configuration shown in FIG. 5, exactly the same effect can be obtained. However, in this case, a cap layer and a Zn diffusion region are required.
「発明が解決しようとする問題点」
ところで、上述したBIGレーザにおいては、電
極８ｂから注入された電流の一部が、第６図に矢
印Ａ１によつて示すように、活性導波路層３に注
入されず、外部導波路領域Ya、Ybを通つて流れ
てしまい、このため、しきい値電流が小さくなら
ない問題があつた。"Problems to be Solved by the Invention" By the way, in the above-mentioned BIG laser, a part of the current injected from the electrode 8b flows into the active waveguide layer 3, as shown by the arrow A1 in FIG. It was not injected and instead flowed through the external waveguide regions Ya and Yb, resulting in the problem that the threshold current was not reduced.
この発明は、上述した事情に鑑みてなされたも
ので、外部導波路領域を流れる電流を大幅に低減
することができる分布反射型半導体レーザおよび
その製造方法を提供することを目的としている。 The present invention has been made in view of the above-mentioned circumstances, and an object of the present invention is to provide a distributed reflection semiconductor laser that can significantly reduce the current flowing through the external waveguide region, and a method for manufacturing the same.
「問題点を解決するための手段」
この発明は、活性導波路層と、この活性導波路
層上に積層された保護層と、前記活性導波路層お
よび保護層の前後および上面に接してこれら各層
を包むように形成された外部導波路層と、この外
部導波路層の所定の部分に沿つて設けられた分布
ブラツグ反射器とを有するメサストライプ構造
と、前記メサストライプ構造を埋め込む埋込層と
を具備する分布反射型半導体レーザにおいて、前
記メサストライプ構造を、前記活性導波路層の部
分の幅が狭く、前記分布ブラツグ反射器の部分の
幅が広い形状とし、かつ、前記メサストライプ構
造の前記分布ブラツグ反射器の部分の上方に、注
入電流にしてｐ−ｎ逆接合を形成する複数の半導
体層を形成したことを特徴とている。"Means for Solving the Problems" The present invention comprises an active waveguide layer, a protective layer laminated on the active waveguide layer, and a mesa stripe structure having an outer waveguide layer formed to surround each layer and a distributed Bragg reflector provided along a predetermined portion of the outer waveguide layer; and a buried layer embedding the mesa stripe structure. In the distributed reflection semiconductor laser, the mesa stripe structure has a narrow width in the active waveguide layer portion and a wide width in the distributed Bragg reflector portion, and The device is characterized in that a plurality of semiconductor layers are formed above the distributed Bragg reflector to form a pn inverse junction when the current is injected.
また、この発明による製造方法は、前記メサス
トライプ構造を、活性導波路層の部分の幅が狭
く、分布ブラツグ反射器の部分の幅が広い形状に
形成する第１の工程と、前記第１の工程終了後の
積層体の上面に、導電型が異なる複数の半導体層
を順次成長させる第２の工程とを有することを特
徴としている。 Further, the manufacturing method according to the present invention includes a first step of forming the mesa stripe structure in a shape in which the width of the active waveguide layer portion is narrow and the width of the distributed Bragg reflector portion is wide; The method is characterized in that it includes a second step of sequentially growing a plurality of semiconductor layers having different conductivity types on the upper surface of the laminate after the step is completed.
「実施例」
以下、図面を参照してこの発明の一実施例につ
いて説明する。第１図はこの発明の一実施例によ
る分布反射型導体レーザ（BIGレーザ）の断面
図、第２図、第３図は各々第１図における−
線、−線断面図であり、これらの図におい
て、第５図の各部に対応する部分には同一の符号
が付してある。これらの図において、１はｐ−
InP基板、３はInGaAsP活性導波路層、４はｎ−
InP保護層、５はｎ−InGaAsP外部導波路層、１
０は分布ブラツグ反射器である。また、１５は外
部導波路層５の上面に積層されたｎ−InP層、１
６，１７，１８は各々ｎ−InP層、ｐ−InP層、
ｎ−InP層、７はSiO2膜、８ａ，８ｂは各々電極
である。"Embodiment" Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a cross-sectional view of a distributed reflection type conductor laser (BIG laser) according to an embodiment of the present invention, and FIGS. 2 and 3 are respectively -
5 are cross-sectional views taken along the line and - line, and in these figures, parts corresponding to those in FIG. 5 are given the same reference numerals. In these figures, 1 is p-
InP substrate, 3 is InGaAsP active waveguide layer, 4 is n-
InP protective layer, 5 is n-InGaAsP outer waveguide layer, 1
0 is a distributed Bragg reflector. Further, 15 is an n-InP layer laminated on the upper surface of the external waveguide layer 5;
6, 17, 18 are n-InP layer, p-InP layer,
The n-InP layer, 7 is a SiO 2 film, and 8a and 8b are electrodes.
次に上述した半導体レーザの製造方法を説明す
る。 Next, a method for manufacturing the above-mentioned semiconductor laser will be explained.
まず、第４図イに示すように、ｎ−InP基板
１の上にInGaAsP活性導波路層３、ｎ−InP保
護層４を順次、液相エピタキシヤル法によつて
成長させ、積層体２１を作成する。 First, as shown in FIG. 4A, an InGaAsP active waveguide layer 3 and an n-InP protective layer 4 are sequentially grown on an n-InP substrate 1 by liquid phase epitaxial method to form a laminate 21. create.
次に、積層体２１の上面中央部にエツチング
保護膜を形成した後、第４図ロに示すように、
基板１に達する深さまでエツチングを行い、次
いで、基板１の上面にエツチングにより分布ブ
ラツグ反射器１０を形成する。 Next, after forming an etching protection film at the center of the upper surface of the laminate 21, as shown in FIG.
Etching is performed to a depth that reaches the substrate 1, and then a distributed blur reflector 10 is formed on the upper surface of the substrate 1 by etching.
次に、２回目の成長を行い、第４図ハに示す
ように、ｎ−InGaAsP外部導波路層５および
ｎ−InP層１５を形成する。 Next, a second growth is performed to form an n-InGaAsP external waveguide layer 5 and an n-InP layer 15, as shown in FIG. 4C.
次に、第４図ハに示すものの上面にエツチン
グ保護膜を形成した後エツチングを行い、第４
図ニに示すメサストライプ構造２２を作成す
る。この場合、メサストライプ構造２２を、同
図に示すように、活性導波路層３の部分（活性
領域）２２ａの幅が狭く、分布ブラツグ反射器
１０の部分（外部導波路領域）２２ｂの幅が広
い構造とする。 Next, after forming an etching protection film on the upper surface of the material shown in FIG.
A mesa stripe structure 22 shown in FIG. 2 is created. In this case, the mesa stripe structure 22 has a narrow width in the active waveguide layer 3 portion (active region) 22a and a width in the distributed Bragg reflector 10 portion (external waveguide region) 22b, as shown in the figure. The structure should be wide.
次に、第４図ニのものの上面に、ｎ−InP層
１６、ｐ−Inb層１７、ｎ−InP層１８を順次
成長させる。この場合、メサストライプ構造２
２の部分２２ａの幅が狭いので、ｎ−InP層１
６、ｐ−InP層１７が、第２図に示すように部
分２２ａの上方に成長せず、側方にのみ成長す
る。一方、メサストライプ構造２２の部分２２
ｂの幅が広いので、部分２２の側方だけでな
く、部分２２ｂの上方にも、第３図に示すよう
に、ｎ−InP層１６、ｐ−InP層１７、ｎ−InP
層１８が順次成長する。これにより、第１図に
示すように、分布ブラツグ反射器１０の上方に
ｎ−ｐ−ｎの３層構造が形成される。 Next, an n-InP layer 16, a p-Inb layer 17, and an n-InP layer 18 are successively grown on the upper surface of the structure shown in FIG. In this case, mesa stripe structure 2
Since the width of the portion 22a of 2 is narrow, the n-InP layer 1
6. The p-InP layer 17 does not grow above the portion 22a, as shown in FIG. 2, but only laterally. On the other hand, the portion 22 of the mesa stripe structure 22
Since the width of b is wide, n-InP layer 16, p-InP layer 17, n-InP layer 16, p-InP layer 17, and
Layers 18 are grown sequentially. As a result, an npn three-layer structure is formed above the distributed Bragg reflector 10, as shown in FIG.
なお、上述したように、幅の狭い部分２２ａ
の上方にはｎ−InP層１６、ｐ−InP層１７を
成長させず、幅の広い部分２２ｂの上方にのみ
ｎ−InP層１６、ｐ−InP層１７を成長させる
ようにすることは、温度、成長時間等の成長条
件をコントロールすることにより、容易に可能
である。 Note that, as described above, the narrow portion 22a
Not growing the n-InP layer 16 and p-InP layer 17 above, but growing the n-InP layer 16 and p-InP layer 17 only above the wide part 22b is a This is easily possible by controlling growth conditions such as growth time.
次に、SiO2膜７、電極８ａ，８ｂを形成す
る。 Next, a SiO 2 film 7 and electrodes 8a and 8b are formed.
このように、上記実施例においては、メサスト
ライプ構造２２の部分２２ａの幅を狭く、部分２
２ｂの幅を広くすることにより、部分２２ｂの上
方に選択的にｎ−ｐ−ｎの層構造を形成してい
る。この結果、分布ブラツグ反射器１０の上方
に、注入電流に対するｐ−ｎ逆接合が形成され、
これにより、第６図に示す外部導波路領域のみを
通過する電流Ａ１をほぼ零とすることができる。 In this way, in the above embodiment, the width of the portion 22a of the mesa stripe structure 22 is narrowed, and the width of the portion 22a of the mesa stripe structure 22 is narrowed.
By increasing the width of portion 2b, an npn layer structure is selectively formed above portion 22b. As a result, a pn inverse junction with respect to the injection current is formed above the distributed bragg reflector 10,
Thereby, the current A1 that passes only through the external waveguide region shown in FIG. 6 can be made almost zero.
「発明の効果」
以上説明したように、この発明による分布反射
型半導体レーザは、外部導波路領域を通過する電
流をほぼ零とすることができ、これにより、しき
い値電流の低減および信頼性の向上を図ることが
できる。また、活性導波路層の幅を狭くできるの
で、発振の横モード制御および低しきい値化がさ
らに実現し易い。また、この発明による製造方法
によれば、従来の製造方法と同じ成長回数によつ
て外部導波路領域にのみ選択的にｐ−ｎ逆接合を
形成できる効果が得られる。"Effects of the Invention" As explained above, the distributed reflection semiconductor laser according to the present invention can reduce the current passing through the external waveguide region to almost zero, thereby reducing the threshold current and improving reliability. It is possible to improve the Furthermore, since the width of the active waveguide layer can be narrowed, it is easier to control the transverse mode of oscillation and lower the threshold voltage. Further, according to the manufacturing method of the present invention, it is possible to selectively form a pn inverse junction only in the external waveguide region by using the same number of growths as in the conventional manufacturing method.
第１図はこの発明の一実施例の構成を示す断面
図、第２図、第３図は各々第１図における−
線、−線断面図、第４図は同実施例の製造工
程を説明するための図、第５図は従来の分布反射
型半導体レーザの構成例を示す断面斜視図、第６
図は同従来例の問題点を説明するための断面図で
ある。
３……活性導波路層、４……保護層、５……外
部導波路層、１０……分布ブラツグ反射器、１６
……ｎ−InP層、１７……ｐ−InP層、１８……
ｎ−InP層、２２……メサストライプ構造。
FIG. 1 is a cross-sectional view showing the configuration of an embodiment of the present invention, and FIGS. 2 and 3 are -
4 is a diagram for explaining the manufacturing process of the same embodiment, FIG. 5 is a cross-sectional perspective view showing an example of the configuration of a conventional distributed reflection semiconductor laser, and FIG.
The figure is a sectional view for explaining the problems of the conventional example. 3... Active waveguide layer, 4... Protective layer, 5... Outer waveguide layer, 10... Distributed Bragg reflector, 16
... n-InP layer, 17 ... p-InP layer, 18 ...
n-InP layer, 22... mesa stripe structure.
Claims (1)
積層された保護層と、前記活性導波路層および
保護層の前後および上面に接してこれら各層を
包むように形成された外部導波路層と、この外
部導波路層の所定の部分に沿つて設けられた分
布ブラツグ反射器とを有するメサストライプ構
造と、 (b) 前記メサストライプ構造を埋め込む埋込層と
を具備する分布反射型半導体レーザにおいて、 (c) 前記メサストライプ構造を、前記活性導波路
層の部分の幅が狭く、前記分布ブラツグ反射器
の部分の幅が広い形状とし、かつ、 (d) 前記メサストライプ構造の前記分布ブラツグ
反射器の部分の上方に、注入電流に対してｐ−
ｎ逆接合を形成する複数の半導体層を形成して
なる分布反射型半導体レーザ。 ２ 活性導波路層と、この活性導波路層上に積層
された保護層と、前記活性導波路層および保護層
の前後および上面に接してこれら各層を包むよう
に形成された外部導波路層と、この外部導波路層
の所定の部分に沿つて設けられた分布ブラツグ反
射器とを有するメサストライプ構造と、前記メサ
ストライプ構造を埋め込む埋込層とを具備する分
布反射型半導体レーザの製造方法において、 (a) 前記メサストライプ構造を、前記活性導波路
層の部分の幅が狭く、前記分布ブラツグ反射器
の部分の幅が広い形状に形成する第１の工程
と、 (b) 前記第１の工程終了後の積層体の上面に、導
電型が異なる複数の半動体層を順次成長させる
第２の工程とを有することを特徴とする分布反
射型半導体レーザの構造方法。[Scope of Claims] 1 (a) An active waveguide layer, a protective layer laminated on the active waveguide layer, and a layer that is in contact with the front, rear, and upper surfaces of the active waveguide layer and the protective layer, and wraps each of these layers. (b) a mesa stripe structure having a formed outer waveguide layer and a distributed Bragg reflector provided along a predetermined portion of the outer waveguide layer; and (b) a buried layer embedding the mesa stripe structure. (c) the mesa stripe structure has a narrow width in the active waveguide layer portion and a wide width in the distributed Bragg reflector portion, and (d) the distributed reflection semiconductor laser comprising: Above the distributed Bragg reflector portion of the mesa stripe structure, p-
A distributed reflection type semiconductor laser formed by forming a plurality of semiconductor layers forming an n-inverse junction. 2. an active waveguide layer, a protective layer laminated on the active waveguide layer, and an external waveguide layer formed so as to be in contact with the front, rear, and upper surfaces of the active waveguide layer and the protective layer so as to wrap each of these layers; A method for manufacturing a distributed reflection semiconductor laser comprising a mesa stripe structure having a distributed Bragg reflector provided along a predetermined portion of the external waveguide layer, and a buried layer embedding the mesa stripe structure, (a) a first step of forming the mesa stripe structure to have a narrow width in the active waveguide layer portion and a wide width in the distributed Bragg reflector portion; (b) the first step; A method for constructing a distributed reflection type semiconductor laser, the method comprising: a second step of sequentially growing a plurality of semi-moving layers having different conductivity types on the top surface of the laminate after completion of the process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6510686A JPS62221178A (en) | 1986-03-24 | 1986-03-24 | Distributed reflection semiconductor laser and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6510686A JPS62221178A (en) | 1986-03-24 | 1986-03-24 | Distributed reflection semiconductor laser and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62221178A JPS62221178A (en) | 1987-09-29 |
| JPH0545077B2 true JPH0545077B2 (en) | 1993-07-08 |
Family
ID=13277311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6510686A Granted JPS62221178A (en) | 1986-03-24 | 1986-03-24 | Distributed reflection semiconductor laser and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62221178A (en) |
-
1986
- 1986-03-24 JP JP6510686A patent/JPS62221178A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62221178A (en) | 1987-09-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3142333B2 (en) | Distributed feedback semiconductor laser and method of driving the same | |
| US4644551A (en) | Buried-type semiconductor laser | |
| JPH01319986A (en) | Semiconductor laser device | |
| JPH0878792A (en) | Alignment of embedded strip and outside strip in semiconductor optical constitutional element | |
| JPH0545077B2 (en) | ||
| US6108361A (en) | Semiconductor laser and method for producing the same | |
| JPS5984577A (en) | Semiconductor laser | |
| JPS62214687A (en) | Structure of semiconductor laser | |
| JPH0528916B2 (en) | ||
| JPH0545076B2 (en) | ||
| JP2563994B2 (en) | Semiconductor laser device and manufacturing method thereof | |
| JP2942404B2 (en) | Method of manufacturing buried heterostructure semiconductor laser | |
| JPS62221181A (en) | Distributed reflection semiconductor laser | |
| JP2986034B2 (en) | Semiconductor directional coupler | |
| JPS5812389A (en) | Semiconductor laser | |
| JPH04107428A (en) | Substrate type optical switch | |
| JPH0656907B2 (en) | Method for manufacturing semiconductor light emitting device | |
| JPS61259593A (en) | Distributed reflection type semiconductor laser | |
| JPS63169093A (en) | Semiconductor laser | |
| JPH01309393A (en) | Semiconductor laser device and its manufacture | |
| JP2001053385A (en) | Semiconductor laser element | |
| JPH05119359A (en) | Substrate type optical switch and production thereof | |
| JPS62259490A (en) | Buried hetero structure semiconductor laser | |
| JPS62286017A (en) | Optical switch | |
| JPS62221173A (en) | Distributed reflection semiconductor laser |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |