JPH0535983B2 - - Google Patents

Info

Publication number
JPH0535983B2
JPH0535983B2 JP17898686A JP17898686A JPH0535983B2 JP H0535983 B2 JPH0535983 B2 JP H0535983B2 JP 17898686 A JP17898686 A JP 17898686A JP 17898686 A JP17898686 A JP 17898686A JP H0535983 B2 JPH0535983 B2 JP H0535983B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17898686A
Other versions
JPS6258143A (en
Inventor
Aanesuto Kaabaa Garii
Original Assignee
Amerikan Terefuon Ando Teregurafu Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to US06/762,086 priority Critical patent/US4652757A/en
Application filed by Amerikan Terefuon Ando Teregurafu Co filed Critical Amerikan Terefuon Ando Teregurafu Co
Publication of JPS6258143A publication Critical patent/JPS6258143A/ja
Publication of JPH0535983B2 publication Critical patent/JPH0535983B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501Semiconductor wafers
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/17Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/1717Systems in which incident light is modified in accordance with the properties of the material investigated with a modulation of one or more physical properties of the sample during the optical investigation, e.g. electro-reflectance
    • G01N2021/1719Carrier modulation in semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible or ultra-violet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
JP17898686A 1985-08-02 1986-07-31 Expired - Lifetime JPH0535983B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US06/762,086 US4652757A (en) 1985-08-02 1985-08-02 Method and apparatus for optically determining defects in a semiconductor material

Publications (2)

Publication Number Publication Date
JPS6258143A JPS6258143A (en) 1987-03-13
JPH0535983B2 true JPH0535983B2 (ja) 1993-05-27

Family

ID=25064075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17898686A Expired - Lifetime JPH0535983B2 (ja) 1985-08-02 1986-07-31

Country Status (6)

Country Link
US (1) US4652757A (ja)
EP (1) EP0211590B1 (ja)
JP (1) JPH0535983B2 (ja)
KR (1) KR950010389B1 (ja)
CA (1) CA1243418A (ja)
DE (1) DE3679250D1 (ja)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4952063A (en) * 1985-03-01 1990-08-28 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface features in a semiconductor
US4795260A (en) * 1987-05-15 1989-01-03 Therma-Wave, Inc. Apparatus for locating and testing areas of interest on a workpiece
US4823368A (en) * 1987-06-30 1989-04-18 Rikagaku Kenkyujyo Open counter for low energy electron detection with suppressed background noise
US4963500A (en) * 1988-02-02 1990-10-16 Sera Solar Corporation Method of monitoring semiconductor manufacturing processes and test sample therefor
US4953983A (en) * 1988-03-25 1990-09-04 Nicholas Bottka Non-destructively measuring local carrier concentration and gap energy in a semiconductor
US4908112A (en) * 1988-06-16 1990-03-13 E. I. Du Pont De Nemours & Co. Silicon semiconductor wafer for analyzing micronic biological samples
EP0348738A3 (de) * 1988-07-01 1991-04-03 Siemens Aktiengesellschaft Verfahren zur zerstörungsfreien Bestimmung elektronischer Inhomogenitäten in Halbleiterschichten
DE3905798A1 (de) * 1989-02-24 1990-08-30 Siemens Ag Verfahren zur messung von schaedigungen in mindestens einem bereich einer halbleiterscheibe waehrend der bearbeitung der halbleiterscheibe
US4968144A (en) * 1989-03-09 1990-11-06 Wayne State University Single beam AC interferometer
US5769540A (en) * 1990-04-10 1998-06-23 Luxtron Corporation Non-contact optical techniques for measuring surface conditions
DE69130245T2 (de) * 1990-07-31 1999-06-02 Toshiba Ceramics Co Verfahren zum Messen der Zwischengittersauerstoffkonzentration
HUT63497A (en) * 1990-12-17 1993-08-30 Semilab Felvezetoe Fiz Lab Rt Method and apparatus for measuring minority charge carrier in semiconductor material
US5583643A (en) * 1991-04-12 1996-12-10 British Technology Group Ltd. Methods of and apparatus for measurement using acousto-optic devices
US5812261A (en) * 1992-07-08 1998-09-22 Active Impulse Systems, Inc. Method and device for measuring the thickness of opaque and transparent films
JPH07105424B2 (ja) * 1991-07-23 1995-11-13 信越半導体株式会社 シリコンウェーハの表面の結合状態及び不純物の評価方法
US5270546A (en) * 1992-04-29 1993-12-14 Mpb Technologies Inc. Method and apparatus for non-contact, rapid and continuous moisture measurements
US5406085A (en) * 1993-07-07 1995-04-11 Board Of Regents, The University Of Texas System Apparatus and method for rapid and nondestructive determination of lattice defects in semiconductor materials
JPH08139146A (ja) * 1994-11-14 1996-05-31 Shin Etsu Handotai Co Ltd 半導体表面のライフタイム評価方法
US6113733A (en) * 1996-11-08 2000-09-05 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
US6849470B1 (en) 1996-11-08 2005-02-01 Matsushita Electric Industrial Co., Ltd. Apparatus and method for optical evaluation, apparatus and method for manufacturing semiconductor device, method of controlling apparatus for manufacturing semiconductor device, and semiconductor device
US5978074A (en) * 1997-07-03 1999-11-02 Therma-Wave, Inc. Apparatus for evaluating metalized layers on semiconductors
US5888838A (en) * 1998-06-04 1999-03-30 International Business Machines Corporation Method and apparatus for preventing chip breakage during semiconductor manufacturing using wafer grinding striation information
US6535628B2 (en) 1998-10-15 2003-03-18 Applied Materials, Inc. Detection of wafer fragments in a wafer processing apparatus
US6323951B1 (en) * 1999-03-22 2001-11-27 Boxer Cross Incorporated Apparatus and method for determining the active dopant profile in a semiconductor wafer
KR100301067B1 (ko) * 1999-08-23 2001-11-01 윤종용 마이크로 스크래치 검사방법 및 이를 적용한 장치
US6429968B1 (en) 2000-03-09 2002-08-06 Agere Systems Guardian Corp Apparatus for photoluminescence microscopy and spectroscopy
US6532076B1 (en) * 2000-04-04 2003-03-11 Therma-Wave, Inc. Method and apparatus for multidomain data analysis
JP2001311877A (ja) * 2000-04-27 2001-11-09 Hamamatsu Photonics Kk 撮像装置
US6381019B1 (en) * 2000-06-30 2002-04-30 Brown University Research Foundation Ultrasonic generator and detector using an optical mask having a grating for launching a plurality of spatially distributed, time varying strain pulses in a sample
DE10056768B4 (de) * 2000-11-14 2004-08-26 Stephan la Barré Verfahren und Vorrichtung zur Messung von Eigenschaften einer Probe mit Meßsignal-Modulation
AU2070102A (en) * 2000-11-14 2002-05-27 Stephan Ia Barre Method and device for measuring properties of a sample
US6812717B2 (en) * 2001-03-05 2004-11-02 Boxer Cross, Inc Use of a coefficient of a power curve to evaluate a semiconductor wafer
US7079975B1 (en) * 2001-04-30 2006-07-18 Advanced Micro Devices, Inc. Scatterometry and acoustic based active control of thin film deposition process
US6940592B2 (en) * 2001-10-09 2005-09-06 Applied Materials, Inc. Calibration as well as measurement on the same workpiece during fabrication
US6917039B2 (en) * 2002-02-13 2005-07-12 Therma-Wave, Inc. Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system
US7027142B2 (en) * 2002-05-06 2006-04-11 Applied Materials, Israel, Ltd. Optical technique for detecting buried defects in opaque films
US6963393B2 (en) * 2002-09-23 2005-11-08 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6878559B2 (en) * 2002-09-23 2005-04-12 Applied Materials, Inc. Measurement of lateral diffusion of diffused layers
US6888632B2 (en) * 2003-02-28 2005-05-03 Therma-Wave, Inc. Modulated scatterometry
US6952261B2 (en) * 2003-03-31 2005-10-04 Therma-Wave, Inc. System for performing ellipsometry using an auxiliary pump beam to reduce effective measurement spot size
JP2004311580A (ja) * 2003-04-03 2004-11-04 Toshiba Corp 半導体評価装置及び半導体評価方法
US7239392B2 (en) * 2003-05-22 2007-07-03 Xitronix Corporation Polarization modulation photoreflectance characterization of semiconductor electronic interfaces
US20040253751A1 (en) * 2003-06-16 2004-12-16 Alex Salnik Photothermal ultra-shallow junction monitoring system with UV pump
US6989105B2 (en) * 2003-06-27 2006-01-24 International Business Machines Corporation Detection of hardmask removal using a selective etch
US7212288B2 (en) * 2003-08-14 2007-05-01 Therma-Wave, Inc. Position modulated optical reflectance measurement system for semiconductor metrology
DE102004038282B4 (de) * 2004-08-03 2006-09-14 Salzgitter Flachstahl Gmbh Verfahren zur Untersuchung auf einem Metallsubstrat aufgebrachter, mit Partikeln durchsetzter Beschichtungen
US7319518B2 (en) * 2005-08-24 2008-01-15 Cree, Inc. Double side polished wafer scratch inspection tool
ES2659781T3 (es) 2005-10-11 2018-03-19 Bt Imaging Pty Limited Método y sistema para inspeccionar una estructura semiconductora de salto de banda indirecto
JP2007288135A (ja) * 2006-03-20 2007-11-01 Kobe Steel Ltd シリコン半導体薄膜の結晶性評価装置及び方法
JP5301770B2 (ja) * 2006-08-25 2013-09-25 株式会社神戸製鋼所 薄膜半導体の結晶性測定装置及びその方法
US20080074668A1 (en) * 2006-09-21 2008-03-27 Alex Salnik Modulated optical reflectance measurement system with enhanced sensitivity
JP5283889B2 (ja) * 2007-10-31 2013-09-04 株式会社神戸製鋼所 シリコン半導体薄膜の結晶性評価装置
JP2011180039A (ja) * 2010-03-02 2011-09-15 Sigma Koki Kk 被検体損傷分析装置
US10446728B2 (en) * 2014-10-31 2019-10-15 eLux, Inc. Pick-and remove system and method for emissive display repair
US9696264B2 (en) * 2013-04-03 2017-07-04 Kla-Tencor Corporation Apparatus and methods for determining defect depths in vertical stack memory
US9651610B2 (en) * 2013-06-29 2017-05-16 Intel Corporation Visible laser probing for circuit debug and defect analysis
JP2017500576A (ja) * 2013-12-26 2017-01-05 ポスコPosco 白色度及び付着量の同時測定装置
US10088418B2 (en) 2014-09-02 2018-10-02 Ramot At Tel-Aviv University Ltd. Method and system for microscopy
US9709437B2 (en) * 2015-02-18 2017-07-18 City University Of Hong Kong System and method for detecting a defect in a structure member
US10274310B2 (en) * 2016-12-22 2019-04-30 The Boeing Company Surface sensing systems and methods for imaging a scanned surface of a sample via sum-frequency vibrational spectroscopy

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3355980A (en) * 1962-02-23 1967-12-05 Owens Illinois Inc Apparatus for inspecting the rim of a bottle or the like which employs polarized light at brewster's angle
US4211488A (en) * 1978-10-03 1980-07-08 Rca Corporation Optical testing of a semiconductor
US4352017A (en) * 1980-09-22 1982-09-28 Rca Corporation Apparatus for determining the quality of a semiconductor surface
US4352016A (en) * 1980-09-22 1982-09-28 Rca Corporation Method and apparatus for determining the quality of a semiconductor surface
US4636088A (en) * 1984-05-21 1987-01-13 Therma-Wave, Inc. Method and apparatus for evaluating surface conditions of a sample

Also Published As

Publication number Publication date
EP0211590B1 (en) 1991-05-15
CA1243418A (en) 1988-10-18
DE3679250D1 (de) 1991-06-20
KR950010389B1 (ko) 1995-09-16
EP0211590A3 (en) 1988-04-20
JPS6258143A (en) 1987-03-13
EP0211590A2 (en) 1987-02-25
CA1243418A1 (ja)
US4652757A (en) 1987-03-24

Similar Documents

Publication Publication Date Title
DE3511291C2 (ja)
DE3506487C2 (ja)
DE3509486C2 (ja)
DE3504085C2 (ja)
DE3512907C2 (ja)
DE3502946C2 (ja)
DE3505427C2 (ja)
DE3501345C2 (ja)
DE3507155C2 (ja)
BG45480A1 (ja)
DE3509894C2 (ja)
DE3513680C2 (ja)
DE3513339C2 (ja)
BG45219A3 (ja)
CA1265510C (ja)
DE3507460C2 (ja)
DE3504497C2 (ja)
DE3505640C2 (ja)
CA1259110C (ja)
DE3503812C2 (ja)
DE3504470C2 (ja)
DE3510109C2 (ja)
BG44563A1 (ja)
DE3501730C2 (ja)
DE3508340C2 (ja)