JPH0534724A - Ferroelectric liquid crystal cell - Google Patents

Ferroelectric liquid crystal cell

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Publication number
JPH0534724A
JPH0534724A JP19156591A JP19156591A JPH0534724A JP H0534724 A JPH0534724 A JP H0534724A JP 19156591 A JP19156591 A JP 19156591A JP 19156591 A JP19156591 A JP 19156591A JP H0534724 A JPH0534724 A JP H0534724A
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liquid crystal
ferroelectric liquid
substrate
electrode
value
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JP19156591A
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JP2960801B2 (en
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Yoshihiko Toyoda
吉彦 豊田
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Mitsubishi Electric Corp
三菱電機株式会社
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Abstract

PURPOSE:To assure the normal operation even with ferroelectric liquid crystal having large spontaneous polarization by sitting the value of the charge quantity accumulated in all the capacitors on the drain electrode side of thin-film transistors(TFTRs) at the value of, >=2 times the product of the spontaneous polarization of the ferroelectric liquid crystal and the area of picture element electrodes. CONSTITUTION:This liquid crystal cell has the structure in which a TFTR substrate 1 provided with the TFTRs on a substrate 4 having the surface consisting of an insulator and the picture element electrodes 5 and a counter substrate 2 provided with a counter electrode 14 on a substrate 13 having the surface consisting of an insulator held the ferroelectric liquid crystal 3. Namely, the accumulation capacity is formed by holding a gate insulating film 10 by an earth electrode 16 and the picture element electrode 5. The value of the accumulation capacity is so determined that the sum of the accumulation capacity and the charge quantity accumulated in the capacity on the other drain electrode side attains the value of >=2times the product of the spantaneous polarization of the ferroelectric liquid crystal and the area of the picture element electrodes 5.

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、たとえば液晶空間光変調器や液晶ディスプレイとして使用される強誘電性液晶セルに関する。 The present invention relates to relates to, for example, a ferroelectric liquid crystal cell used as the liquid crystal spatial light modulator, a liquid crystal display.

【0002】 [0002]

【従来の技術】図4は、たとえば特開昭62-299064号公報に示された従来の液晶セルの構成を示す断面図であり、図5はその回路図である。 BACKGROUND ART FIG. 4 is a sectional view showing a configuration of a conventional liquid crystal cell shown in for example, JP 62-299064, Fig. 5 is a circuit diagram thereof. 図中、20は薄膜トランジスタアレイ基板であり、4は透明絶縁基板、5は一般に In the figure, 20 is a thin film transistor array substrate, a transparent insulating substrate 4, 5 are generally
ITOが使われている画素電極、6はゲート配線、7は半導体層、8はソース配線、9はドレイン電極、10はゲート絶縁膜、11はシリコンチッ化膜などの絶縁膜からなる保護膜、12は配向膜である。 Pixel electrodes ITO is used, 6 denotes a gate wiring 7 is semiconductor layer, 8 source wire, the drain electrode 9, 10 denotes a gate insulating film, 11 is a protective film made of an insulating film such as a silicon nitride film, 12 is an alignment film. 2は対向基板であり、13は透明絶縁基板、14は一般にITOが使われている対向電極、15は配向膜である。 2 is a counter substrate, a transparent insulating substrate 13, 14 is generally counter electrode ITO is used, is 15 a oriented film. 対向電極14は共通電極に接続されている。 Counter electrode 14 is connected to the common electrode. 3はこれらの基板の間に挟み込まれた液晶である。 3 is a liquid crystal sandwiched between the substrates.

【0003】つぎに動作について説明する。 [0003] Next, the operation will be described. ゲート電極に電圧が印加されると半導体層にキャリアーが誘起され薄膜トランジスタはON状態となる。 When a voltage is applied to the gate electrode thin film transistor carriers is induced in the semiconductor layer is in an ON state. ゲート電極に電圧が印加されていないときはOFF状態である。 When a voltage to the gate electrode is not applied it is OFF. ON状態ではソース信号電圧はそのままドレイン電極に印加され、対向基板上の対向電極に印加されている電圧との差分の電圧が液晶に印加されることになる。 The source signal voltage is ON state is directly applied to the drain electrode, the voltage difference between the voltage applied to the counter electrode on the counter substrate is to be applied to the liquid crystal.

【0004】強誘電性液晶は分子軸が2つの方向を取ることができ、電圧を印加するとその分子軸の方向がいずれか一方の方向から他方の方向に変化する。 [0004] Ferroelectric liquid crystal can be molecular axis takes two directions varies when a voltage is applied from one direction direction either of the molecular axis in the other direction. また強誘電性液晶は屈折率の異方性を有している。 The ferroelectric liquid crystal has an anisotropic refractive index. このため、その前後に偏光子をその偏光方向が直行し、光の入射側の偏光子の偏光方向を強誘電性液晶のいずれか一方の分子軸と一致するように配置すると、電圧印加により光をオン・オフすることができる。 When Accordingly, the go straight its polarization direction polarizer back and forth, it arranged to coincide with the polarization direction of the polarizer on the light incident side ferroelectric either molecular axis of the liquid crystal, the light by applying a voltage it can be turned on and off.

【0005】また、強誘電性液晶の分子軸が変化するときには自発分極反転に伴う反転電流が流れる。 [0005] The inverting current flows due to the spontaneous polarization inversion when the molecular axes of the ferroelectric liquid crystal is changed. この反転電流の総電荷量は自発分極の値に比例する。 The total charge amount of the reversal current is proportional to the value of the spontaneous polarization.

【0006】 [0006]

【発明が解決しようとする課題】従来の液晶セルは以上のように構成されており、強誘電性液晶の反転電流分の電荷を蓄積するための負荷容量の値についてはなんら考慮されていないため、自発分極の大きな強誘電性液晶を用いた液晶セルでは反転電流分の電荷を蓄積することができず、正常に動作しないなどの問題点があった。 THE INVENTION Problems to be Solved] The conventional liquid crystal cell is constructed as described above, since the value of the load capacitance for storing inverted current component of the charge of the ferroelectric liquid crystal is not any taken into account in the liquid crystal cell using a large ferroelectric liquid crystal spontaneous polarization can not be accumulated in the inversion current component charges, there is a problem, such as not operating properly.

【0007】本発明は前記のような問題点を解消するためになされたもので、自発分極の大きな強誘電性液晶を用いても正常に動作できる装置をうることを目的とする。 [0007] The present invention has been made to solve the above problems, and an object thereof is to sell equipment that can operate normally even with large ferroelectric liquid crystal spontaneous polarization.

【0008】 [0008]

【課題を解決するための手段】本発明は、少なくともその表面が絶縁物からなる基板上に薄膜トランジスタおよび画素電極が設けられた薄膜トランジスタアレイ基板と、少なくともその表面が絶縁物からなる基板上に対向電極が設けられた対向基板とが強誘電性液晶を挟み込む構造の液晶セルであって、薄膜トランジスタのドレイン電極側の全ての容量に蓄積された電荷量の値が強誘電性液晶の自発分極と画素電極の面積との積の2倍以上であることを特徴とする強誘電性液晶セルに関する。 The present invention SUMMARY OF] is at least a thin film transistor array substrate having a surface provided with the thin film transistor and a pixel electrode on a substrate made of an insulating material, the counter electrode on a substrate at least the surface of an insulating material a liquid crystal cell structure sandwiching the counter substrate and the ferroelectric liquid crystal which is provided, the value of the amount of charge accumulated in all of the capacity of the drain electrode of the thin film transistor is strongly dielectric liquid crystal spontaneous polarization and the pixel electrode about a ferroelectric liquid crystal cell, characterized in that at least twice the product of the area.

【0009】 [0009]

【作用】本発明の強誘電性液晶セルでは、薄膜トランジスタのドレイン電極側の全ての容量に蓄積された電荷量の値を強誘電性液晶の自発分極と画素電極の面積との積の2倍以上とすることにより、自発分極の大きな強誘電性液晶においても正常に動作させることができる。 [Action] In the ferroelectric liquid crystal cell of the present invention, more than twice the product of the area of ​​spontaneous polarization and the pixel electrode of the ferroelectric liquid crystal charges accumulated amount of values ​​to all the capacity of the drain electrode of the thin film transistor with, it can also be operated normally in a large ferroelectric liquid crystal spontaneous polarization.

【0010】 [0010]

【実施例】以下、本発明の一実施例を図1および図2を用いて説明する。 EXAMPLES Hereinafter, a description will be given of an embodiment of the present invention with reference to FIGS. 図中、1は薄膜トランジスタアレイ基板であり、4は透明絶縁基板、5はITOなどの画素電極(透明電極)、6はゲート配線、7は半導体層、8はソース配線、9はドレイン電極、10はゲート絶縁膜、11はシリコンチッ化膜などの絶縁膜からなる保護膜、12は配向膜、16はアース電極である。 In the figure, 1 is a thin film transistor array substrate, a transparent insulating substrate 4, the pixel electrodes, such as 5 ITO (transparent electrode), 6 denotes a gate wiring 7 is semiconductor layer, 8 source wire, the drain electrode 9, 10 a gate insulating film, 11 is a protective film made of an insulating film such as a silicon nitride film, 12 is an alignment film, 16 is a ground electrode.

【0011】前記透明絶縁基板、画素電極、ゲート配線、半導体層、ソース配線、ドレイン電極、ゲート絶縁膜、保護膜、配向膜およびアース電極の材質、形状などは、ドレイン電極側の負荷容量の値が下記要件を満足しうる限りとくに限定はない。 [0011] The transparent insulating substrate, pixel electrodes, gate lines, a semiconductor layer, a source wiring, a drain electrode, a gate insulating film, the protective film, the material of the alignment film and the ground electrode, etc. shape, the value of the load capacitance of the drain electrode side but not particularly limited as long as it can satisfy the following requirements.

【0012】すなわち、本発明の液晶セルでは、反転電流分の電荷を蓄積するためにドレイン電極側の全ての容量に蓄積された電荷量の値が強誘電性液晶の自発分極と画素電極の面積との積の2倍以上に設定される。 Namely, in the liquid crystal cell of the present invention, the area of ​​the value of the amount of charge stored in all the capacitive ferroelectric liquid crystal spontaneous polarization and the pixel electrode of the drain electrode side to accumulate inverted current component of the charge It is set to be more than twice the product of the. ここでいう画素電極とは、トランジスタアレイ基板上に設けた画素電極のことであり、その面積とは、画素電極のうち、強誘電液晶が反転している部分の面積のことである。 The pixel electrodes here is that of the pixel electrodes provided on the transistor array substrate, and the area, among the pixel electrodes, is that the area of ​​the portion where the ferroelectric liquid crystal is inverted.

【0013】ドレイン電極側の容量は、薄膜トランジスタアレイ基板の画素電極、ドレイン電極と対向基板の対向電極との間の容量と、ゲート電極とドレイン電極の間の容量と、ソース電極とドレイン電極の間の容量と、蓄積容量、たとえばドレイン電極とアース電極、画素電極とアース電極などとの間の容量によって形成される。 [0013] capacitance of the drain electrode side, the pixel electrode of the thin film transistor array substrate, a capacitance between the drain electrode and the counter substrate opposing electrode, and the capacitance between the gate electrode and the drain electrode, between the source and drain electrodes and capacity, the storage capacity, for example, the drain electrode and the ground electrode, is formed by the capacitance between the such pixel electrode and the ground electrode.

【0014】図1に示される例ではアース電極16と画素電極5とでゲート絶縁膜10を挟み込むことにより蓄積容量を形成している。 [0014] In the example shown in FIG. 1 to form a storage capacitor by sandwiching the gate insulating film 10 between the ground electrode 16 and the pixel electrode 5. 蓄積容量の値は、蓄積容量とその他のドレイン電極側の容量に蓄積される電荷量の和が強誘電性液晶の自発分極と画素電極の面積との積の2倍以上となるように決めている。 The value of the storage capacitor is determined such that the storage capacitor and the other more than twice the product of the area of ​​spontaneous polarization and the pixel electrode of the ferroelectric liquid crystal sum of the amount of charge accumulated in the capacitance of the drain electrode side there. また図1に示される例では蓄積容量用の絶縁膜としてゲート絶縁膜10を用いたが、図3に示すように別に絶縁膜17を形成してもよい。 Although using the gate insulating film 10 as an insulating film for the storage capacitor in the example shown in FIG. 1, it may be formed separately from the insulating film 17 as shown in FIG. また蓄積容量はドレイン電極とゲート電極との間に形成してもよい。 The storage capacitor may be formed between the drain electrode and the gate electrode.

【0015】またドレイン電極側の容量を増やす方法として、セルギャップを狭くする方法を用いてもよく、蓄積容量と併用してもよい。 [0015] As a method of increasing the capacity of the drain electrode side, may be used a method of narrowing a cell gap, it may be used in combination with the storage capacitor.

【0016】図1中の2は対向基板であり、13は透明絶縁基板、14は対向電極(透明電極)、15は配向膜である。 [0016] 2 in FIG. 1 is a counter substrate, a transparent insulating substrate 13, 14 is the counter electrode (transparent electrode), 15 is an alignment film. 対向電極14は共通電極に接続されている。 Counter electrode 14 is connected to the common electrode. これら透明絶縁基板、対向電極および配向膜の材質、形状などは、前記薄膜トランジスタアレイ基板のばあいと同様にとくに限定はない。 These transparent insulating substrates, a material of the counter electrode and an alignment film, etc. The shape is not particularly limited as in the case of the thin film transistor array substrate.

【0017】3はこれらの基板の間に挟み込まれた液晶である。 [0017] 3 is a liquid crystal sandwiched between the substrates. 前記液晶としては、高速動作が可能な自発分極の大きいものが好ましい。 As the liquid crystal, those high-speed operation possible spontaneous polarization is preferably large. また蓄積容量が必要となるのは、自発分極が6.6nc/cm 2以上の強誘電性液晶を用いたばあいである。 Also the storage capacity is required is when the spontaneous polarization is used 6.6nc / cm 2 or more ferroelectric liquid crystal.

【0018】つぎに実施例に基づき、本発明の強誘電性液晶セルをさらに具体的に説明する。 [0018] Then it based on examples further illustrate the ferroelectric liquid crystal cell of the present invention.

【0019】[実施例1]本発明の液晶セルの一例として、図3に示したような断面を有するセルの実施例を示す。 As an example of the liquid crystal cell in Example 1 the present invention, illustrating an embodiment of a cell having a cross section shown in FIG.

【0020】用いた液晶はチッソ(株)製のCS-1024で自発分極の値は35nc/cm 2である。 The liquid crystal used was the value of the spontaneous polarization in CS-1024 manufactured by Chisso Corporation is 35 nC / cm 2. この液晶を薄膜トランジスタアレイ基板と対向基板の間に挟み込む。 Sandwiching the liquid crystal between the TFT array substrate and the opposite substrate. このときの対向電極と画素電極の間隔は保護膜の膜厚も含めて Interval counter electrode and the pixel electrode in this case including the film thickness of the protective film
2.5μmに設定されている。 It is set to 2.5μm. 画素電極の面積は1.6×10 -5 The area of the pixel electrode is 1.6 × 10 -5
cm 2であり、画素電極と対向電極の間の容量は270fF、 cm 2, and the capacitance between the pixel electrode and the counter electrode 270FF,
ドレイン電極と対向電極の間の容量は18fF、ゲート電極とドレイン電極の間の容量は74fF、ソース電極とドレイン電極の間の容量は12fF、蓄積容量は75fFである。 Capacitance between the drain electrode and the counter electrode 18FF, capacitance between the gate electrode and the drain electrode 74FF, the capacitance between the source electrode and the drain electrode 12FF, the storage capacitor is 75FF. ただし、ストレージ容量には10Vの電圧が印加されている。 However, the voltage of 10V is applied to the storage capacity. 液晶の動作電圧も10Vである。 Operating voltage of the liquid crystal is also a 10V.

【0021】以上のように構成されたセルの動作結果を図6に示す。 [0021] The operation result of the configured cell as described above is shown in FIG.

【0022】 [0022]

【発明の効果】以上のように、本発明によれば薄膜トランジスタのドレイン電極側の全ての容量に蓄積された電荷量の値を強誘電性液晶の自発分極と画素電極の面積との積の2倍以上としたので、自発分極の大きな強誘電性液晶を用いた液晶セルを正常に動作させることができる。 As it is evident from the foregoing description, the second product of the area of ​​all the capacity accumulated charge amount values ​​ferroelectric liquid crystal spontaneous polarization and the pixel electrode of the drain electrode of the thin film transistor according to the present invention having more than doubled, it is possible to normally operate the liquid crystal cell using a large ferroelectric liquid crystal spontaneous polarization.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例による液晶セルの断面図である。 1 is a cross-sectional view of a liquid crystal cell according to an embodiment of the present invention.

【図2】図1に示す液晶セルの回路図である。 2 is a circuit diagram of a liquid crystal cell shown in FIG.

【図3】本発明の一実施例による液晶セルの断面図である。 3 is a cross-sectional view of a liquid crystal cell according to an embodiment of the present invention.

【図4】従来の液晶セルの断面図である。 4 is a cross-sectional view of a conventional liquid crystal cell.

【図5】図4に示す液晶セルの回路図である。 5 is a circuit diagram of a liquid crystal cell shown in FIG.

【図6】実施例1の液晶セルの動作結果を示すグラフである。 6 is a graph showing a result of an operation of the liquid crystal cell of Example 1.

【符号の説明】 DESCRIPTION OF SYMBOLS

1 薄膜トランジスタアレイ基板 2 対向基板 3 液晶 4、13 透明絶縁基板 5 画素電極 6 ゲート配線 7 半導体層 8 ソース配線 9 ドレイン電極 10 ゲート絶縁膜 14 対向電極 16 アース電極 17 蓄積容量用の絶縁膜 1 a thin film transistor array substrate 2 opposing substrate 3 liquid crystal 4,13 transparent insulating substrate 5 pixel electrode 6 gate wiring 7 semiconductor layer 8 dielectric layer of the source wiring 9 drain electrode 10 a gate insulating film 14 opposing electrode 16 ground electrode 17 for the storage capacitor

Claims (1)

  1. 【特許請求の範囲】 【請求項1】 少なくともその表面が絶縁物からなる基板上に薄膜トランジスタおよび画素電極が設けられた薄膜トランジスタアレイ基板と、少なくともその表面が絶縁物からなる基板上に対向電極が設けられた対向基板とが強誘電性液晶を挟み込む構造の液晶セルであって、薄膜トランジスタのドレイン電極側の全ての容量に蓄積された電荷量の値が強誘電性液晶の自発分極と画素電極の面積との積の2倍以上であることを特徴とする強誘電性液晶セル。 And Patent Claims 1, wherein at least a thin film transistor array substrate thin film transistor and a pixel electrode on a substrate is provided that the surface of an insulating material, a counter electrode provided at least a surface on a substrate of insulating material It was a counter substrate is a liquid crystal cell structure sandwiching the ferroelectric liquid crystal, the area of ​​the spontaneous polarization and the pixel electrode of the value of the amount of charge stored in all the capacitive ferroelectric liquid crystal of the drain electrode side of the thin film transistor a ferroelectric liquid crystal cell, characterized in that at least twice the product of the.
JP19156591A 1991-07-31 1991-07-31 Ferroelectric liquid crystal cell Expired - Fee Related JP2960801B2 (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876424B1 (en) 1999-11-05 2005-04-05 Fujitsu Limited Liquid crystal display having a spontaneous polarization
KR100577410B1 (en) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 X-ray image sensor and a method for fabricating the same
JP2008033343A (en) * 2007-08-22 2008-02-14 Fujitsu Ltd Method of driving liquid crystal display device
JP2013101360A (en) * 2009-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876424B1 (en) 1999-11-05 2005-04-05 Fujitsu Limited Liquid crystal display having a spontaneous polarization
KR100656228B1 (en) * 1999-11-05 2006-12-12 후지쯔 가부시끼가이샤 Liquid crystal display
KR100577410B1 (en) * 1999-11-30 2006-05-08 엘지.필립스 엘시디 주식회사 X-ray image sensor and a method for fabricating the same
JP2008033343A (en) * 2007-08-22 2008-02-14 Fujitsu Ltd Method of driving liquid crystal display device
JP2013101360A (en) * 2009-10-21 2013-05-23 Semiconductor Energy Lab Co Ltd Semiconductor device
US9559208B2 (en) 2009-10-21 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and electronic device including the same

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JP2960801B2 (en) 1999-10-12

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