JPH05347186A - Electroluminescence display - Google Patents

Electroluminescence display

Info

Publication number
JPH05347186A
JPH05347186A JP17934892A JP17934892A JPH05347186A JP H05347186 A JPH05347186 A JP H05347186A JP 17934892 A JP17934892 A JP 17934892A JP 17934892 A JP17934892 A JP 17934892A JP H05347186 A JPH05347186 A JP H05347186A
Authority
JP
Japan
Prior art keywords
formed
display
membrane
transparent
driver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17934892A
Other languages
Japanese (ja)
Inventor
Yoshiki Nakabachi
善樹 中鉢
Original Assignee
Clarion Co Ltd
クラリオン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd, クラリオン株式会社 filed Critical Clarion Co Ltd
Priority to JP17934892A priority Critical patent/JPH05347186A/en
Publication of JPH05347186A publication Critical patent/JPH05347186A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To provide an electroluminescence display which is transparent and has a display function.
CONSTITUTION: An EL element is composed of a glass substrate 1, a transparent conductive membrane 2 formed on the substrate 1, the first insulating membrane 3 formed on the membrane surface, a fluorescent membrane 4 formed on the membrane surface, the second insulating membrane 5 formed on the membrane surface, and the upper side transparent conductive membrane 6 formed on the membrane surface. The back plate of the EL element is opaque since it is formed of an Al metal or the like, but it is transparent in the above constitution because two electrodes are formed of a transparent electrode membrane, and a EL element having a display function is formed. As a result, when it is used as a front side setting type display element for a car driver, it is transparent when no voltage is applied, and the visual field of the driver is never interrupted. And even when it is in the display condition, the non-luminous part is transparent, and the driver can recognizes the front condition while watching the display.
COPYRIGHT: (C)1993,JPO&Japio

Description

【発明の詳細な説明】 DETAILED DESCRIPTION OF THE INVENTION

【0001】 [0001]

【産業上の利用分野】本発明は、エレクトロルミネセンス・ディスプレイに係るもので、特に車載用に好適なエレクトロルミネセンス・ディスプレイの改良に関する。 The present invention relates to a relates to electroluminescent displays, particularly to an improvement of the preferred electroluminescent display for automotive.

【0002】 [0002]

【従来の技術】今日の高度情報化社会において、情報の端末であるディスプレイ装置が、人間と機械を結ぶインターフェイスの重要な位置を占めていることは広く認識されている。 BACKGROUND OF THE INVENTION In advanced information society today, the display device is a terminal information, that an important part of the interface linking the human and machine is widely recognized.

【0003】通常、ディスプレイ装置、特に近年普及の著しいパーソナルコンピュータ用として使用されているのは、CRTすなわち従来のブラウン管である。 [0003] Normally, a display device, what is used for particular recent popularization of significant personal computer, a CRT i.e. conventional cathode ray tube. 他方、 On the other hand,
パーソナルコンピュータにおけるラップトップ型の普及にみられるように、近年は可搬形の端末装置の需要も大きくなっている。 As it can be seen in the widespread use of a laptop in a personal computer, in recent years has increased the demand of the terminal device portable.

【0004】上記目的には、重量が大きく、更にスペースの大きな従来のCRTは適当でなく、これに代わるような薄型で軽量、さらに大容量表示が可能なフラット型ディスプレイが注目されてきている。 [0004] The above object is large weight has been larger conventional CRT is not suitable for space, light weight and thin, as alternative, attention is further large capacity display can be flat displays. また、可搬形コンピュータに限らず、家庭用、車載用においても、薄型、 Further, the present invention is not limited to a portable computer, a home, even in a vehicle-mounted, flat-screen,
軽量化の必要性は非常に大きいものがある。 The need for weight reduction, it is very large.

【0005】前記フラット型ディスプレイには、プラズマディスプレイ(PDP)、液晶(LCD)、蛍光表示管(VFD)、エレクトロルミネセンス(EL)などの多くの種類があり、その特徴に合わせて各所で実用化されている。 [0005] The flat-type display, a plasma display panel (PDP), liquid crystal (LCD), a vacuum fluorescent display (VFD), there are many types, such as electroluminescent (EL), practically in various places in accordance with the features It is of. とくに最近の可搬形コンピュータの端末としては、液晶が広く使用されており、また、小型のTV装置としても実用化されている。 The particular terminals recent portable computers, liquid crystal is widely used, it has also been put to practical use as a small-sized TV device. しかしながら、液晶には、受動形の表示装置であること、視角依存性があること、視認性が悪く表示品位が低いことなど、多くの欠点がある。 However, the liquid crystal, it is a passive type display device, that there is a viewing angle dependence, etc. It is less deteriorated display quality visibility, has many drawbacks. 液晶に限らず、他のフラット型ディスプレイにしても、一長一短があり、今日のCRTに匹敵するような性能にないのが現実である。 Not limited to the liquid crystal, also in the other flat-type display, there are advantages and disadvantages, it is reality is not in the performance, such as comparable to today's CRT.

【0006】この中で、視認性の上で、CRTに最も近い位置にあるのがエレクトロルミネセンス(EL)である。 [0006] In this, on top of the visibility, there closest to the CRT is an electroluminescent (EL). このELには粉末で形成する分散形と、薄膜を利用する薄膜形の2種類がある。 A dispersion form of forming a powder for this EL, there are two types of thin film type utilizing thin film. 分散形は実用化の歴史も古く、近年、液晶用のパックライトとして注目されている。 Distributed is old also the history of practical use, in recent years, has been attracting attention as pack light for a liquid crystal. 他方、薄膜形は研究の歴史が浅いが、西暦1974 On the other hand, thin film form but is shallow history of research, the year 1974
年以降、高輝度、高寿命の二重絶縁構造形の交流形EL Later years, high brightness, flow type EL double insulation structure shaped long life
が開発されて以来、多くの注目を集めるようになっている。 But since it was developed, which is to attract a lot of attention. この薄膜形は、電極パターンを切ることにより、ドットマトリックス表示が可能となり、グラフィックディスプレイとして実用化されている。 The thin film form, by cutting an electrode pattern allows the dot matrix display, it has been put to practical use as a graphic display. これ以後の説明において、EL装置とは前記薄膜形に限定する。 In this following description, the EL device is limited to the thin film type. EL装置の特徴を挙げると、以下のようなものがある。 Taking the characteristics of the EL device, it is as follows.

【0007】(A)全固体装置であり、堅牢である。 [0007] (A) is an all-solid-state device, it is robust. (B)視認性が優れている。 (B) the visibility is excellent. (C)薄型、軽量である。 (C) thin, light in weight. (D)視角依存性がない。 (D) there is no viewing angle dependence.

【0008】一方、車載用のディスプレイの需要が近年増加している。 [0008] On the other hand, the demand for display of automotive has increased in recent years. これはナビゲーションシステムの導入などにより、コンピュータが標準的に搭載され、これまでのセグメント的なディスプレイではなく、マトリックス表示のディスプレイが必要となったためである。 Due This introduction of the navigation system, the computer is standardly equipped, hitherto not a segmental display, because the matrix display of the display is needed. 現在、 Current,
主に使用されているのは、液晶表示素子である。 What is mainly used is a liquid crystal display device.

【0009】 [0009]

【発明が解決しようとする課題】これまでの車載用表示ディスプレイは、車両のコンソール部に設置されていたが、多量のデータを見るために運転者は視界を前方からそらす必要があり、これら多量のデータを人間が認識するまでの時間、非常に危険な状況となる。 [Problems that the Invention is to Solve So far vehicle display displays, which had been installed in the console of the vehicle, the driver to see a large amount of data needs to divert the view from the front, these multimeric time of the data to human beings to recognize, is a very dangerous situation.

【0010】 [0010]

【発明の目的】本発明は、上記に述べた点に鑑み、EL THE INVENTION The object of the invention is, in view of the points described above, EL
素子を利用し、運転者の視界を変化させることなく、多量の情報を理解できるようにしたELディスプレイを提供することを目的とする。 Utilizing device, without changing the visibility of the driver, and an object thereof is to provide an EL display that to understand a large amount of information.

【0011】 [0011]

【課題を解決するための手段】本発明のELディスプレイは、ガラス基板と、このガラス基板上に形成された透明導電膜と、前記透明導電膜上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された蛍光膜と、前記蛍光膜上に形成された第2絶縁膜と、前記第2絶縁膜上に形成された上部透明導電膜とより成ることを要旨としている。 EL display of the present invention SUMMARY OF] includes a glass substrate, the transparent conductive film formed on a glass substrate, a first insulating film formed on the transparent conductive film, the second 1 and a fluorescent layer formed on the insulating film, the second insulating film formed on the fluorescent film, and summarized in that comprising further a second upper formed on the insulating film transparent conductive film.

【0012】 [0012]

【作用】上記構成のELディスプレイは、背面電極に透明導電膜を使用しているため、透明で、しかもディスプレイ機能を兼ねそなえている。 [Action] EL display having the above structure, because it uses a transparent conductive film on the back electrode is transparent, yet are provided serves as a display function.

【0013】 [0013]

【実施例】図1に、本発明の一実施例によるELディスプレイ(E)を示す。 [Embodiment] FIG. 1 shows an EL display (E) according to an embodiment of the present invention. 同図において、1はガラス基板、 In the figure, 1 is a glass substrate,
2はその上面に形成されたITOもしくはZnO等の透明導電膜であり、その上面に第1絶縁膜3が形成され、 2 is a transparent conductive film of ITO or ZnO or the like formed on its upper surface, the first insulating film 3 is formed on the upper surface,
さらにその上面に蛍光膜4が形成され、その蛍光膜上に第2絶縁膜5が形成され、その第2絶縁膜上にITOもしくはZnO等の上部透明膜6が形成されている。 Further fluorescent film 4 is formed on its upper surface, that on the phosphor layer a second insulating film 5 is formed, an upper transparent film 6, such as ITO or ZnO is formed on the second insulating film.

【0014】通常、EL素子の背面電極は、Al等の金属電極を使用しているため、不透明であるが、上記の如く、背面電極にITOもしくはZnO等の透明導電膜を使用したものによれば、透明で、しかもディスプレイ機能を有した素子が構成される。 [0014] Normally, the back electrode of the EL element, because it uses metal electrodes of Al or the like, but is opaque, as described above, according to those using a transparent conductive film made of ITO or ZnO or the like to the back electrode if, transparent, yet device is constructed having a display function. 前記蛍光膜、絶縁膜などの材料は限定しないものとする。 It said phosphor layer, a material such as an insulating film is not intended to limit.

【0015】図2は、前記構成のELディスプレイ(A)を車両内に設置した状態を示したものである。 [0015] Figure 2, the configuration EL display (A) illustrates a state installed in the vehicle. 同図において、7はコンソールパネル、8はフロントガラス、9は運転者であり、ELディスプレイ(A)は運転者の前方に設置されることになる。 In the figure, 7 is the console panel, 8 windshield 9 is the driver, EL display (A) will be installed in front of the driver.

【0016】上記ELディスプレイ(A)は、電圧を印加しない状態では、透明であり、運転者の視界を妨げることはない。 [0016] The EL display (A) is in the state where no voltage is applied, a transparent, does not interfere with the driver's view. また表示状態においても、非発光部は透明であり、運転者の前方の状況をディスプレイを見るのと同時に認識することができる。 Also in the display state, the non-light emitting portion is transparent, it can be recognized at the same time that the front of the status of the driver looking at the display. なお、蛍光膜の材料や構造を工夫すると、単色発光のみならず、マルチカラー、 Incidentally, when devising the material and structure of the fluorescent film, not monochromatic light only, multicolor,
フルカラーの表示も可能である。 Full-color display is also possible.

【0017】 [0017]

【発明の効果】以上に述べたように、本発明によれば、 As described above, according to the present invention, according to the present invention,
EL素子の2つの電極を透明導電膜で形成しているので、車両運転者の前方設置型表示素子として好適なEL Since the two electrodes of the EL elements are formed of a transparent conductive film, suitable EL as the front-mounted display device of the vehicle driver
ディスプレイを得ることができる。 It is possible to obtain a display.

【図面の簡単な説明】 BRIEF DESCRIPTION OF THE DRAWINGS

【図1】本発明の一実施例を示すELディスプレイの側面図である。 1 is a side view of an EL display showing an embodiment of the present invention.

【図2】ELディスプレイを車載用の前方設置型表示素子に使用した状態の説明図である。 FIG. 2 is an explanatory view of a state of using the EL display in front-mounted display device for vehicle.

【符号の説明】 DESCRIPTION OF SYMBOLS

A ELディスプレイ 1 ガラス基板 2 透明導電膜 3 第1絶縁膜 4 蛍光膜 5 第2絶縁膜 6 上部透明導電膜 7 コンソールパネル 8 フロントガラス 9 運転者 A EL display 1 glass substrate 2 transparent conductive film 3 first insulating film 4 fluorescent film 5 second insulating film 6 upper transparent conductive film 7 console panel 8 the windshield 9 driver

Claims (1)

    【特許請求の範囲】 [The claims]
  1. 【請求項1】 ガラス基板と、このガラス基板上に形成された透明導電膜と、前記透明導電膜上に形成された第1絶縁膜と、前記第1絶縁膜上に形成された蛍光膜と、 1. A glass substrate, the transparent conductive film formed on a glass substrate, a first insulating film formed on the transparent conductive film, a first phosphor layer formed on the insulating film ,
    前記蛍光膜上に形成された第2絶縁膜と、前記第2絶縁膜上に形成された上部透明導電膜とより成ることを特徴とするエレクトロルミネセンス・ディスプレイ。 The second insulating and film, the second electroluminescent display, characterized in that more becomes a insulating film formed in an upper transparent conductive film formed on the phosphor film.
JP17934892A 1992-06-12 1992-06-12 Electroluminescence display Pending JPH05347186A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17934892A JPH05347186A (en) 1992-06-12 1992-06-12 Electroluminescence display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17934892A JPH05347186A (en) 1992-06-12 1992-06-12 Electroluminescence display

Publications (1)

Publication Number Publication Date
JPH05347186A true JPH05347186A (en) 1993-12-27

Family

ID=16064277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17934892A Pending JPH05347186A (en) 1992-06-12 1992-06-12 Electroluminescence display

Country Status (1)

Country Link
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757127A (en) * 1994-06-10 1998-05-26 Nippondenso Co., Ltd. Transparent thin-film EL display apparatus with ambient light adaptation means
US7045438B2 (en) 2001-07-27 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, semiconductor device, and method of fabricating the devices
US7180091B2 (en) 2001-08-01 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7189631B2 (en) 2002-10-30 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7332381B2 (en) 2001-10-30 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7361573B2 (en) 2001-08-10 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of peeling off and method of manufacturing semiconductor device
US9202987B2 (en) 2001-07-16 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US9281403B2 (en) 2001-08-22 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US9493119B2 (en) 2001-11-30 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965981A (en) * 1994-06-10 1999-10-12 Nippondenso Co., Ltd Transparent thin-film EL display apparatus
US5757127A (en) * 1994-06-10 1998-05-26 Nippondenso Co., Ltd. Transparent thin-film EL display apparatus with ambient light adaptation means
US9608004B2 (en) 2001-07-16 2017-03-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US9202987B2 (en) 2001-07-16 2015-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
US7045438B2 (en) 2001-07-27 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, semiconductor device, and method of fabricating the devices
US8390019B2 (en) 2001-07-27 2013-03-05 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, semiconductor device, and method of fabricating the devices
US7534700B2 (en) 2001-07-27 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a semiconductor device having a film in contact with a debonded layer
US7180091B2 (en) 2001-08-01 2007-02-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7361573B2 (en) 2001-08-10 2008-04-22 Semiconductor Energy Laboratory Co., Ltd. Method of peeling off and method of manufacturing semiconductor device
US9755148B2 (en) 2001-08-22 2017-09-05 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US9281403B2 (en) 2001-08-22 2016-03-08 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US9842994B2 (en) 2001-08-22 2017-12-12 Semiconductor Energy Laboratory Co., Ltd. Peeling method and method of manufacturing semiconductor device
US7648862B2 (en) 2001-10-30 2010-01-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7994506B2 (en) 2001-10-30 2011-08-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9620408B2 (en) 2001-10-30 2017-04-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US8980700B2 (en) 2001-10-30 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US7332381B2 (en) 2001-10-30 2008-02-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US9493119B2 (en) 2001-11-30 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Vehicle, display device and manufacturing method for a semiconductor device
US8173520B2 (en) 2002-10-30 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9224667B2 (en) 2002-10-30 2015-12-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9508620B2 (en) 2002-10-30 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8012854B2 (en) 2002-10-30 2011-09-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7923348B2 (en) 2002-10-30 2011-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7547612B2 (en) 2002-10-30 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7189631B2 (en) 2002-10-30 2007-03-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US9929190B2 (en) 2002-10-30 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

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