JPH05343307A - Ｏ２ ／Ｈｅプラズマを利用したシリレーテッドフォトレジストのＲＩＥ乾式現像方法 - Google Patents

Ｏ２ ／Ｈｅプラズマを利用したシリレーテッドフォトレジストのＲＩＥ乾式現像方法

Info

Publication number
JPH05343307A
JPH05343307A JP3131421A JP13142191A JPH05343307A JP H05343307 A JPH05343307 A JP H05343307A JP 3131421 A JP3131421 A JP 3131421A JP 13142191 A JP13142191 A JP 13142191A JP H05343307 A JPH05343307 A JP H05343307A
Authority
JP
Japan
Prior art keywords
plasma
photosensitive film
gas
photoresist
rie
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP3131421A
Other languages
English (en)
Japanese (ja)
Inventor
Kwang-Ho Kwon
ホー クォン クワン
Son-Jin Yun
ジン ユン セオン
Byong-Son Park
セオン パーク ビュン
Jin Jeon Yon
ジン ジェオン ヨン
Sang-Won Kang
ウォン カン サン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronics and Telecommunications Research Institute ETRI
Original Assignee
Electronics and Telecommunications Research Institute ETRI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronics and Telecommunications Research Institute ETRI filed Critical Electronics and Telecommunications Research Institute ETRI
Publication of JPH05343307A publication Critical patent/JPH05343307A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Electron Beam Exposure (AREA)
JP3131421A 1990-06-05 1991-06-03 Ｏ２ ／Ｈｅプラズマを利用したシリレーテッドフォトレジストのＲＩＥ乾式現像方法 Withdrawn JPH05343307A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019900008258A KR920005782B1 (ko) 1990-06-05 1990-06-05 O₂/He 플라즈마를 이용한 실리레이티드 포토레지스트(silylated photoresist)의 RIE 건식현상공정
KR8258/1990 1990-06-05

Publications (1)

Publication Number Publication Date
JPH05343307A true JPH05343307A (ja) 1993-12-24

Family

ID=19299796

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3131421A Withdrawn JPH05343307A (ja) 1990-06-05 1991-06-03 Ｏ２ ／Ｈｅプラズマを利用したシリレーテッドフォトレジストのＲＩＥ乾式現像方法

Country Status (2)

Country Link
JP (1) JPH05343307A (ko)
KR (1) KR920005782B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100476378B1 (ko) * 1997-06-26 2005-07-07 주식회사 하이닉스반도체 탑표면이미지프로세스에의해형성된레지스트패턴제거방법

Also Published As

Publication number Publication date
KR920001248A (ko) 1992-01-30
KR920005782B1 (ko) 1992-07-18

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 19980903