JPH0533546B2 - - Google Patents
Info
- Publication number
- JPH0533546B2 JPH0533546B2 JP59252607A JP25260784A JPH0533546B2 JP H0533546 B2 JPH0533546 B2 JP H0533546B2 JP 59252607 A JP59252607 A JP 59252607A JP 25260784 A JP25260784 A JP 25260784A JP H0533546 B2 JPH0533546 B2 JP H0533546B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- voltage
- semiconductor region
- writing
- control gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
- H10D30/686—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection using hot carriers produced by avalanche breakdown of PN junctions, e.g. floating gate avalanche injection MOS [FAMOS]
Landscapes
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252607A JPS61131483A (ja) | 1984-11-29 | 1984-11-29 | 不揮発性メモリの書込み法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59252607A JPS61131483A (ja) | 1984-11-29 | 1984-11-29 | 不揮発性メモリの書込み法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61131483A JPS61131483A (ja) | 1986-06-19 |
| JPH0533546B2 true JPH0533546B2 (enrdf_load_stackoverflow) | 1993-05-19 |
Family
ID=17239718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59252607A Granted JPS61131483A (ja) | 1984-11-29 | 1984-11-29 | 不揮発性メモリの書込み法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61131483A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6121087A (en) * | 1996-06-18 | 2000-09-19 | Conexant Systems, Inc. | Integrated circuit device with embedded flash memory and method for manufacturing same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58102563A (ja) * | 1981-12-15 | 1983-06-18 | Agency Of Ind Science & Technol | 不揮発性半導体メモリ |
-
1984
- 1984-11-29 JP JP59252607A patent/JPS61131483A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61131483A (ja) | 1986-06-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |