JPH0533536B2 - - Google Patents

Info

Publication number
JPH0533536B2
JPH0533536B2 JP9214084A JP9214084A JPH0533536B2 JP H0533536 B2 JPH0533536 B2 JP H0533536B2 JP 9214084 A JP9214084 A JP 9214084A JP 9214084 A JP9214084 A JP 9214084A JP H0533536 B2 JPH0533536 B2 JP H0533536B2
Authority
JP
Grant status
Grant
Patent type
Prior art keywords
active layer
vertical wire
pressure
applied
tip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP9214084A
Other versions
JPS60235446A (en )
Inventor
Masaaki Yasumoto
Tadayoshi Enomoto
Original Assignee
Nippon Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Grant date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Abstract

PURPOSE:To reduce the pressure applied during diffusion welding in a multi- layer semiconductor integrated circuit, by forming the part of a vertical wire in a first active layer contacted with a vertical wire in a second active layer so as to have a triangular or trapezoidal cross section. CONSTITUTION:An end of a vertical wire 220 in a first active layer is formed to have a triangular cross section. In practice, however, it may be formed into a conical shape when the aperture in a first insulation film 202 is circular, and into a pyramid when the aperture is square. When such second active layer is superposed on the first active layer, the tip 221 of the first vertical wire 220 is contacted with the surface of a metal bump in the initial stage when no pressure is applied. Accordingly, if a slight pressure is applied after that, all the pressure is concentrated at the tip 221. The first vertical wire 220 or the metal bump is therefore easily deformed plastically. Thus, any dirty or oxide film is broken and it is facilitated to perform diffusion welding.
JP9214084A 1984-05-09 1984-05-09 Expired - Lifetime JPH0533536B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9214084A JPH0533536B2 (en) 1984-05-09 1984-05-09

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9214084A JPH0533536B2 (en) 1984-05-09 1984-05-09

Publications (2)

Publication Number Publication Date
JPS60235446A true JPS60235446A (en) 1985-11-22
JPH0533536B2 true JPH0533536B2 (en) 1993-05-19

Family

ID=14046128

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9214084A Expired - Lifetime JPH0533536B2 (en) 1984-05-09 1984-05-09

Country Status (1)

Country Link
JP (1) JPH0533536B2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0374508B2 (en) * 1986-03-20 1991-11-27
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
JP4110390B2 (en) * 2002-03-19 2008-07-02 セイコーエプソン株式会社 A method of manufacturing a semiconductor device
JP5315688B2 (en) * 2007-12-28 2013-10-16 株式会社ニコン Stacked semiconductor device

Also Published As

Publication number Publication date Type
JP1824054C (en) grant
JPS60235446A (en) 1985-11-22 application

Similar Documents

Publication Publication Date Title
US4754912A (en) Controlled collapse thermocompression gang bonding
JPH01187948A (en) Semiconductor device
JPS55118643A (en) Wire bonding process
US5408127A (en) Method of and arrangement for preventing bonding wire shorts with certain integrated circuit components
JPH01293626A (en) Wire bonding method in flexible wiring board
JPS59191338A (en) Tool for wire bonder
JPH02229445A (en) Film carrier and semiconductor device
JPS5516415A (en) Diode
JPH03227539A (en) Semiconductor device
JPS63141356A (en) Manufacture of semiconductor device
JPS62232948A (en) Lead frame
JPS57106056A (en) Electrode structural body of semiconductor device
JPH01134958A (en) Semiconductor device
JPS62256445A (en) Capillary tool
JPH02278743A (en) Junction structure of indium solder
JPS62263665A (en) Lead frame and semiconductor device using thesame
JPS63148646A (en) Semiconductor device
JPS60136338A (en) Semiconductor device
JPH0195539A (en) Semiconductor device
JPH04299541A (en) Structure and method for performing die bonding
JPH03159152A (en) Manufacture of bump electrode
JPS6386538A (en) Wire bonding process
JPH02146742A (en) Method and device for wire bonding
JPH01278751A (en) Semiconductor device
JPS63198346A (en) Semiconductor integrated circuit