JPH053151A - Resist removing device - Google Patents

Resist removing device

Info

Publication number
JPH053151A
JPH053151A JP3145793A JP14579391A JPH053151A JP H053151 A JPH053151 A JP H053151A JP 3145793 A JP3145793 A JP 3145793A JP 14579391 A JP14579391 A JP 14579391A JP H053151 A JPH053151 A JP H053151A
Authority
JP
Japan
Prior art keywords
chamber
sulfuric acid
air
cleaning
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3145793A
Other languages
Japanese (ja)
Inventor
Hidenori Aoki
秀紀 青木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3145793A priority Critical patent/JPH053151A/en
Publication of JPH053151A publication Critical patent/JPH053151A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To prevent a resist removing capability in a removal chamber from being reduced. CONSTITUTION:Sulfuric acid tanks 10 are provided in a removal chamber 2, warm water cleaning tanks 11 are provided in a cleaning chamber 3, an opening and closing shutter 1 is provided between the chambers 2 and 3, a semiconductor wafer transfer robot 4 is provided, an air introducing pipe 5 having a plurality of holes in its lower part is provided over the vicinity of the shutter 1 and an air feeding device 12 is connected to the pipe 5.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は硫酸槽が設けられた除
去室と温水洗浄槽が設けられた洗浄室とを有するレジス
ト除去装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resist removing apparatus having a removing chamber provided with a sulfuric acid tank and a cleaning chamber provided with a hot water cleaning tank.

【0002】[0002]

【従来の技術】従来のホトレジスト除去装置において
は、除去室と洗浄室との間に開閉シャッタを設けてい
る。
2. Description of the Related Art In a conventional photoresist removing apparatus, an opening / closing shutter is provided between a removing chamber and a cleaning chamber.

【0003】このホトレジスト除去装置においては、除
去室で半導体ウェハのホトレジストを除去したのちに、
開閉シャッタを開き、半導体ウェハを洗浄室に搬送し、
洗浄室で半導体ウェハを洗浄する。
In this photoresist removing apparatus, after removing the photoresist on the semiconductor wafer in the removing chamber,
Open the open / close shutter, transfer the semiconductor wafer to the cleaning chamber,
The semiconductor wafer is cleaned in the cleaning room.

【0004】なお、本出願人は本発明の出願に際し先行
技術調査を行なった。その結果、実開昭52−3596
5号公報にエアカーテンを設けた半導体製造装置が記載
されていることが判った。しかし、発明の結果としてエ
アカーテンを用いることが類似してはいるものの、本願
発明は後述するように上記公報の発明とは目的、構成が
異なるものである。
The applicant conducted a prior art search when applying the present invention. As a result, actual exploitation 52-3596
It was found that Japanese Patent No. 5 describes a semiconductor manufacturing apparatus provided with an air curtain. However, although the use of the air curtain is similar as a result of the invention, the invention of the present application is different from the invention of the above-mentioned publication in the purpose and the configuration as described later.

【0005】[0005]

【発明が解決しようとする課題】しかし、従来のホトレ
ジスト除去装置においては、開閉シャッタを開いたとき
に、温水洗浄槽から立ち上がった水蒸気が除去室内に流
れ込むから、硫酸槽内の硫酸の濃度が低下し、除去室に
おけるホトレジストの除去能力が低下する。このため、
硫酸槽内の硫酸を頻繁に交換する必要があるから、半導
体装置の製造コストが高価となる。
However, in the conventional photoresist removing apparatus, when the opening / closing shutter is opened, the water vapor rising from the warm water washing tank flows into the removing chamber, so that the concentration of sulfuric acid in the sulfuric acid tank decreases. However, the capability of removing the photoresist in the removal chamber is reduced. For this reason,
Since it is necessary to frequently exchange the sulfuric acid in the sulfuric acid tank, the manufacturing cost of the semiconductor device becomes high.

【0006】この発明は上述の課題を解決するためにな
されたもので、除去室におけるレジストの除去能力が低
下することがないレジスト除去装置を提供することを目
的とする。
The present invention has been made to solve the above problems, and an object of the present invention is to provide a resist removing apparatus in which the resist removing ability in the removing chamber does not deteriorate.

【0007】[0007]

【課題を解決するための手段】この目的を達成するた
め、この発明においては、硫酸槽が設けられた除去室
と、温水洗浄槽が設けられた洗浄室と、上記除去室と上
記洗浄室との間に設けられた開閉シャッタと、被加工物
の搬送ロボットとを有するレジスト除去装置において、
上記開閉シャッタの近傍の上部に下部に複数の穴を有す
るエア導入管を設け、上記エア導入管にエア供給装置を
接続する。
To achieve this object, in the present invention, a removal chamber provided with a sulfuric acid tank, a cleaning chamber provided with a hot water cleaning tank, the removal chamber and the cleaning chamber are provided. In a resist removing device having an opening / closing shutter provided between and a workpiece transfer robot,
An air introducing pipe having a plurality of holes in the lower portion is provided in the upper portion near the opening / closing shutter, and an air supply device is connected to the air introducing pipe.

【0008】[0008]

【作用】このレジスト除去装置においては、搬送ロボッ
トにより被加工物を除去室から洗浄室に搬送するとき
に、開閉シャッタを開にするとともに、エア供給装置か
らエア導入管にエアを供給することにより、除去室と洗
浄室との間にエアカーテンを形成する。
In this resist removing apparatus, when the workpiece is transferred from the removing chamber to the cleaning chamber by the transfer robot, the opening / closing shutter is opened and air is supplied from the air supply device to the air introduction pipe. , Forming an air curtain between the removal chamber and the cleaning chamber.

【0009】[0009]

【実施例】図1はこの発明に係るオゾン硫酸除去を行な
うホトレジスト除去装置を示す概略図である。図におい
て、2は除去室、3は洗浄室と、10は除去室2内に設
けられた硫酸槽、11は洗浄室3内に設けられた温水洗
浄槽、1は除去室2と洗浄室3との間に設けられた開閉
シャッタで、開閉シャッタ1はテフロンの膜からなる。
4は図2に示すような半導体ウェハが収納された搬送カ
セット9を除去室2から洗浄室3に搬送する搬送ロボッ
ト、5は開閉シャッタ1の近傍の上部に設けられたエア
導入管で、エア導入管5は下部に複数の穴を有する。1
2はエア導入管5に接続されたエア供給装置で、エア供
給装置12は清浄エア供給源(図示せず)に接続されて
いる。6、7はそれぞれ除去室2、洗浄室3に設けられ
た排気ダクトで、排気ダクトは吸引装置(図示せず)に
接続されている。
1 is a schematic view showing a photoresist removing apparatus for removing ozone-sulfuric acid according to the present invention. In the figure, 2 is a removal chamber, 3 is a cleaning chamber, 10 is a sulfuric acid tank provided in the removal chamber 2, 11 is a hot water cleaning tank provided in the cleaning chamber 3, 1 is the removal chamber 2 and the cleaning chamber 3. The opening / closing shutter 1 is formed of a Teflon film.
Reference numeral 4 denotes a transfer robot for transferring a transfer cassette 9 containing semiconductor wafers as shown in FIG. 2 from the removal chamber 2 to the cleaning chamber 3, and 5 is an air introduction pipe provided in the upper portion near the opening / closing shutter 1 The introduction tube 5 has a plurality of holes at the bottom. 1
Reference numeral 2 is an air supply device connected to the air introduction pipe 5, and the air supply device 12 is connected to a clean air supply source (not shown). Reference numerals 6 and 7 denote exhaust ducts provided in the removal chamber 2 and the cleaning chamber 3, respectively, and the exhaust ducts are connected to a suction device (not shown).

【0010】このホトレジスト除去装置よって半導体ウ
ェハの表面に形成されたホトレジストを除去するには、
まず搬送カセット9に半導体ウェハを収納し、搬送カセ
ット9を搬送ロボット4で保持し、除去室2内でホトレ
ジストを除去する。つぎに、図2に示すように、開閉シ
ャッタ1を開にするとともに、エア供給装置12により
エア導入管5に乾燥した清浄エアを供給し、エア導入管
5の複数の穴から清浄エア噴出させることにより、除去
室2と洗浄室3との間にエアカーテン8を形成する。こ
の場合、清浄エアの速度は、清浄エアが半導体ウェハに
直接当たっても問題のない程度とする。つぎに、搬送ロ
ボット4を除去室2から洗浄室3に移動し、開閉シャッ
タ1を閉にするとともに、エア供給装置12からエア導
入管5への清浄エアの供給を停止する。つぎに、洗浄室
3内で半導体ウェハを洗浄する。
To remove the photoresist formed on the surface of the semiconductor wafer by this photoresist removing apparatus,
First, the semiconductor wafer is stored in the transfer cassette 9, the transfer cassette 9 is held by the transfer robot 4, and the photoresist is removed in the removal chamber 2. Next, as shown in FIG. 2, the opening / closing shutter 1 is opened, and dry clean air is supplied to the air introduction pipe 5 by the air supply device 12 to eject the clean air from the plurality of holes of the air introduction pipe 5. Thus, the air curtain 8 is formed between the removal chamber 2 and the cleaning chamber 3. In this case, the speed of the clean air is set so that there is no problem even if the clean air directly hits the semiconductor wafer. Next, the transfer robot 4 is moved from the removal chamber 2 to the cleaning chamber 3, the opening / closing shutter 1 is closed, and the supply of clean air from the air supply device 12 to the air introduction pipe 5 is stopped. Next, the semiconductor wafer is cleaned in the cleaning chamber 3.

【0011】このようなホトレジスト除去装置において
は、開閉シャッタ1を開にするとともに、除去室2と洗
浄室3との間にエアカーテン8を形成すれば、温水洗浄
槽11から立ち上がった水蒸気が除去室2内に流れ込む
のを防止することができるから、硫酸槽10内の硫酸の
濃度が低下することがないので、除去室2におけるホト
レジストの除去能力が低下するのを防止することができ
る。このため、硫酸槽10内の硫酸を頻繁に交換する必
要がないから、半導体装置の製造コストが安価となる。
In such a photoresist removing apparatus, if the opening / closing shutter 1 is opened and the air curtain 8 is formed between the removing chamber 2 and the cleaning chamber 3, the water vapor rising from the warm water cleaning tank 11 is removed. Since it can be prevented from flowing into the chamber 2, the concentration of sulfuric acid in the sulfuric acid tank 10 does not decrease, so that the removal capability of the photoresist in the removal chamber 2 can be prevented from decreasing. Therefore, it is not necessary to frequently exchange the sulfuric acid in the sulfuric acid tank 10, so that the manufacturing cost of the semiconductor device becomes low.

【0012】なお、上述したごとく、実開昭52−35
965号公報にエアカーテンを設けた半導体製造装置が
記載されているが、この発明においては、レジスト除去
装置の内部にエアカーテンを形成するのに対して、上記
公報の考案においては、半導体気相成長装置の反応室の
外側にエアカーテンを形成しているのであり、この発明
と上記公報の考案とは構成において明らかに相違してい
る。また、この発明においては、硫酸槽内の硫酸の濃度
が低下することがないから、除去室におけるレジストの
除去能力が低下するのを防止することができるとういう
効果を奏するのに対して、上記公報の考案においては、
外部から反応室内に塵埃が侵入するのを防止することが
でき、反応室内の有害ガスから操作者を守ることができ
るという効果を奏するのであり、この発明と上記公報の
考案とは効果においても明らかに相違している。
As mentioned above, as described above,
Although a semiconductor manufacturing apparatus provided with an air curtain is described in Japanese Patent No. 965, in the present invention, the air curtain is formed inside the resist removing apparatus. Since the air curtain is formed outside the reaction chamber of the growth apparatus, the present invention and the device of the above publication are clearly different in structure. Further, in the present invention, since the concentration of sulfuric acid in the sulfuric acid tank does not decrease, there is an effect that it is possible to prevent the removal ability of the resist in the removal chamber from being reduced. In devising the publication,
It is possible to prevent dust from entering the reaction chamber from the outside and to protect the operator from harmful gas in the reaction chamber. This invention and the invention of the above publication make clear the effects. Is different from.

【0013】[0013]

【発明の効果】以上説明したように、この発明に係るレ
ジスト除去装置においては、開閉シャッタを開にすると
ともに、除去室と洗浄室との間にエアカーテンを形成す
れば、温水洗浄槽から立ち上がった水蒸気が除去室内に
流れ込むのを防止することができるから、硫酸槽内の硫
酸の濃度が低下することがないので、除去室におけるレ
ジストの除去能力が低下するのを防止することができ
る。このため、硫酸槽内の硫酸を頻繁に交換する必要が
ないから、被加工物の製造コストが安価となる。このよ
うに、この発明の効果は顕著である。
As described above, in the resist removing apparatus according to the present invention, if the opening / closing shutter is opened and an air curtain is formed between the removing chamber and the cleaning chamber, the resist removing device rises from the hot water cleaning tank. Further, since it is possible to prevent the water vapor from flowing into the removal chamber, the concentration of sulfuric acid in the sulfuric acid tank does not decrease, so that it is possible to prevent the removal ability of the resist in the removal chamber from decreasing. Therefore, it is not necessary to frequently replace the sulfuric acid in the sulfuric acid tank, so that the manufacturing cost of the work piece is low. As described above, the effect of the present invention is remarkable.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明に係るホトレジスト除去装置を示す概
略図である。
FIG. 1 is a schematic view showing a photoresist removing device according to the present invention.

【図2】図1に示したホトレジスト除去装置の動作説明
図である。
FIG. 2 is an operation explanatory view of the photoresist removing device shown in FIG.

【符号の説明】[Explanation of symbols]

1…開閉シャッタ 2…除去室 3…清浄室 4…搬送ロボット 5…エア導入管 10…硫酸槽 11…温水清浄槽 12…エア供給装置 1 ... Open / close shutter 2 ... Removal chamber 3 ... Cleaning chamber 4 ... Transfer robot 5 ... Air introduction pipe 10 ... Sulfuric acid tank 11 ... Hot water cleaning tank 12 ... Air supply device

Claims (1)

【特許請求の範囲】 【請求項1】硫酸槽が設けられた除去室と、温水洗浄槽
が設けられた洗浄室と、上記除去室と上記洗浄室との間
に設けられた開閉シャッタと、被加工物の搬送ロボット
とを有するレジスト除去装置において、上記開閉シャッ
タの近傍の上部に下部に複数の穴を有するエア導入管を
設け、上記エア導入管にエア供給装置を接続したことを
特徴とするレジスト除去装置。
Claims: 1. A removal chamber provided with a sulfuric acid tank, a cleaning chamber provided with a hot water cleaning tank, and an opening / closing shutter provided between the removal chamber and the cleaning chamber. In a resist removing apparatus having a workpiece transfer robot, an air introducing pipe having a plurality of holes in a lower portion is provided in an upper portion near the opening / closing shutter, and an air supply device is connected to the air introducing pipe. Resist removing device.
JP3145793A 1991-06-18 1991-06-18 Resist removing device Pending JPH053151A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3145793A JPH053151A (en) 1991-06-18 1991-06-18 Resist removing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3145793A JPH053151A (en) 1991-06-18 1991-06-18 Resist removing device

Publications (1)

Publication Number Publication Date
JPH053151A true JPH053151A (en) 1993-01-08

Family

ID=15393291

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3145793A Pending JPH053151A (en) 1991-06-18 1991-06-18 Resist removing device

Country Status (1)

Country Link
JP (1) JPH053151A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359226A (en) * 2001-05-30 2002-12-13 Shimada Phys & Chem Ind Co Ltd Batch type wet treatment apparatus
US7255747B2 (en) * 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
JP2008526033A (en) * 2004-12-22 2008-07-17 株式会社Sokudo Coat / development module with shared distribution

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002359226A (en) * 2001-05-30 2002-12-13 Shimada Phys & Chem Ind Co Ltd Batch type wet treatment apparatus
US7255747B2 (en) * 2004-12-22 2007-08-14 Sokudo Co., Ltd. Coat/develop module with independent stations
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
JP2008526033A (en) * 2004-12-22 2008-07-17 株式会社Sokudo Coat / development module with shared distribution
KR100925898B1 (en) * 2004-12-22 2009-11-09 가부시키가이샤 소쿠도 Coat/develop module with shared dispense
JP2011139076A (en) * 2004-12-22 2011-07-14 Sokudo Co Ltd Coat/development module accompanying common distribution
JP4842280B2 (en) * 2004-12-22 2011-12-21 株式会社Sokudo Coat / development module with shared distribution

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