JPH05289322A - Pattern forming material and method for forming pattern using the same - Google Patents
Pattern forming material and method for forming pattern using the sameInfo
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- JPH05289322A JPH05289322A JP4090609A JP9060992A JPH05289322A JP H05289322 A JPH05289322 A JP H05289322A JP 4090609 A JP4090609 A JP 4090609A JP 9060992 A JP9060992 A JP 9060992A JP H05289322 A JPH05289322 A JP H05289322A
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- acid
- forming material
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は半導体素子製作または高
さの異なる所望の有機物パタンを形成材料とパタン形成
法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a material for forming a semiconductor element or a desired organic material pattern having different heights and a method for forming the pattern.
【０００２】[0002]
【従来の技術】ＬＳＩ，ＶＬＳＩ等の半導体素子製作に
用いられる微細加工技術は他のパタン形成技術にも応用
できる。高さの異なるあるいは段差のあるパタン形成技
術としてジアゾナフトキノンとノボラック樹脂からなる
ポジ型フォトレジスト，酸硬化型ネガ型化学増幅系レジ
ストを用いて、透過率の異なるパタンを有するマスクを
介して露光する方法がフィーリー（Feely)により報告さ
れている（エス・ピー・アイ・イー，６３１巻，４８ペ
ージ，１９８６年）。2. Description of the Related Art The microfabrication technique used for manufacturing semiconductor devices such as LSI and VLSI can be applied to other pattern forming techniques. As a technique for forming patterns with different heights or steps, using a positive photoresist made of diazonaphthoquinone and novolac resin, an acid-curable negative chemical amplification resist, and exposing through a mask having patterns of different transmittances. The method is reported by Feely (SPI E, 631, 48, 1986).
【０００３】[0003]
【発明が解決しようとする課題】ジアゾナフトキノンと
ノボラック樹脂からなるポジ型フォトレジスト，酸硬化
型ネガ型化学増幅系レジストを用いる場合、レジストの
露後部，透過率が３０％から７０％の中間露後部，未露
後部の現像速度の差を利用して段差のあるパタンを形成
する。このことは現像時間の違いにより中間露光領域の
膜厚の変化が大きい。本発明の目的は膜厚変化の少ない
パタン形成材料とパタン形成法を提供することにある。When a positive photoresist composed of diazonaphthoquinone and a novolac resin or an acid-curable negative chemical amplification resist is used, the dew portion of the resist, the intermediate dew having a transmittance of 30% to 70%. A stepped pattern is formed by utilizing the difference in developing speed between the rear part and the unexposed rear part. This means that there is a large change in the film thickness in the intermediate exposure region due to the difference in development time. An object of the present invention is to provide a pattern forming material and a pattern forming method that cause little change in film thickness.
【０００４】[0004]
【課題を解決するための手段】上記の目的はアルカリ可
溶性フェノール樹脂，溶解抑制剤，酸前駆体，酸捕捉剤
からなるパタン形成材料の塗膜を形成し、透過率の異な
るパタンを有するマスクを介して露光した後ベーク，現
像を行うパタン形成方法により達成される。[Means for Solving the Problems] The above-mentioned object is to form a coating film of a pattern-forming material comprising an alkali-soluble phenol resin, a dissolution inhibitor, an acid precursor and an acid scavenger, and to provide a mask having patterns having different transmittances. It is achieved by a pattern forming method of performing baking and development after exposure through.
【０００５】本発明のパタン形成材料でアルカリ水溶液
に溶解可能なフェノール樹脂としてノボラック樹脂，ハ
ロゲン化ノボラック樹脂，ポリビニルフェノール，ポリ
ビニルフェノールのハロゲン化物なる群から選ばれた少
なくとも一種類の高分子である。The pattern-forming material of the present invention is at least one kind of polymer selected from the group consisting of novolac resins, halogenated novolac resins, polyvinylphenols, and polyvinylphenol halides as the phenolic resin soluble in an alkaline aqueous solution.
【０００６】酸前駆体はアルキルおよびアリールスルホ
ン酸エステルを用いることができる。例えば、トリ（メ
タンスルホニルオキシ）ベンゼン，トリ（エタンスルホ
ニルオキシ）ベンゼン，トリ（プロパンスルホニルオキ
シ）ベンゼン，トリ（ブタンスルホニルオキシ）ベンゼ
ン，トリ（ベンゼンスルホニルオキシ）ベンゼン，トリ
（トルエンスルホニルオキシ）ベンゼン，トリ(ナフタ
レンスルホニルオキシ)ベンゼンなどがある。また、酸
前駆体としてオニウム塩を用いることもできる。例え
ば、トリフェニルスルホニルトリフレート，ジフェニル
ヨードニウムトリフレート，ビス（ｐ−ｔ−ブチルフェ
ニル）ヨードニウムトリフレートなどがある。As the acid precursor, alkyl and aryl sulfonic acid esters can be used. For example, tri (methanesulfonyloxy) benzene, tri (ethanesulfonyloxy) benzene, tri (propanesulfonyloxy) benzene, tri (butanesulfonyloxy) benzene, tri (benzenesulfonyloxy) benzene, tri (toluenesulfonyloxy) benzene, Examples include tri (naphthalenesulfonyloxy) benzene. An onium salt can also be used as the acid precursor. For example, there are triphenylsulfonyl triflate, diphenyliodonium triflate, bis (pt-butylphenyl) iodonium triflate, and the like.
【０００７】溶解抑制剤はフェノール性水酸基を有する
化合物，高分子のフェノール性水酸基をテトラヒドロピ
ラニル基，ｔ−ブトキシカルボニル基で保護した化合
物，高分子を用いることができる。例えば、ノボラック
樹脂，ハロゲン化ノボラック樹脂，ポリビニルフェノー
ル，ポリビニルフェノールのハロゲン化物のフェノール
性水酸基をテトラヒドロピラニル基で保護した高分子、
ビスフェノールＡ，１，１，１−トリス（４−ヒドロキ
シフェニル）エタンをテトラヒドロピラニル基，ｔ−ブ
トキシカルボニル基で保護した化合物などが用いられ
る。As the dissolution inhibitor, a compound having a phenolic hydroxyl group, a compound obtained by protecting the phenolic hydroxyl group of a polymer with a tetrahydropyranyl group or a t-butoxycarbonyl group, and a polymer can be used. For example, novolac resin, halogenated novolac resin, polyvinylphenol, a polymer obtained by protecting the phenolic hydroxyl group of a polyvinylphenol halide with a tetrahydropyranyl group,
A compound obtained by protecting bisphenol A, 1,1,1-tris (4-hydroxyphenyl) ethane with a tetrahydropyranyl group or a t-butoxycarbonyl group is used.
【０００８】酸捕捉剤はアミンが用いられる。例えば、
イミダゾール，ベンズイミダゾール，フェニルイミダゾ
ール，アミノフェノールなどが用いられる。この酸捕捉
剤は露光後のベーク中にレジスト膜から飛ばないことが
望ましい。An amine is used as the acid scavenger. For example,
Imidazole, benzimidazole, phenylimidazole, aminophenol, etc. are used. It is desirable that this acid scavenger does not fly off the resist film during baking after exposure.
【０００９】[0009]
【作用】アルカリ可溶性フェノール樹脂，溶解抑制剤，
酸前駆体と酸捕捉剤を含むパタン形成材料の露光、ベー
ク後溶解速度を調べたところ、ある露光量においてレジ
ストの溶解速度がある膜厚で極端に低下することを見出
した。これは露光により発生した酸濃度が膜厚方向に分
布しており（レジスト上方で多く、基板付近で少な
い）、ある濃度以下の酸は酸捕捉剤であるアミンに捕捉
されてしまい、ある膜厚以下では酸触媒反応が抑制され
てしまうためと考えられる。酸触媒反応生成物がある膜
厚以下では少ないため溶解速度が低下したと考えられ
る。一方、酸捕捉剤を含まないパタン形成材料を用いた
場合にはある膜厚で極端に溶解速度が低下することはな
く、レジスト膜が現像されていく。このように、酸捕捉
剤であるアミンをパタン形成材料に添加することにより
膜厚方向の溶解速度を制御することができ、この材料に
透過率の異なるパタンを有するマスクを介して露光した
後ベーク，現像を行うことにより段差のあるパタンを形
成することができ、その制御が容易になる。[Function] Alkali-soluble phenol resin, dissolution inhibitor,
When the dissolution rate of the pattern forming material containing the acid precursor and the acid scavenger after exposure and baking was examined, it was found that the dissolution rate of the resist was extremely decreased at a certain film thickness at a certain exposure amount. This is because the acid concentration generated by exposure is distributed in the film thickness direction (more in the upper part of the resist and less in the vicinity of the substrate), and an acid having a certain concentration or less is trapped by the amine which is an acid scavenger. In the following, it is considered that the acid-catalyzed reaction is suppressed. It is considered that the dissolution rate decreased because the amount of acid-catalyzed reaction product was less than a certain film thickness. On the other hand, when the pattern forming material containing no acid scavenger is used, the dissolution rate does not extremely decrease at a certain film thickness, and the resist film is developed. Thus, by adding amine, which is an acid scavenger, to the pattern forming material, the dissolution rate in the film thickness direction can be controlled, and after this material is exposed through a mask having patterns having different transmittances, baking is performed. By developing, it is possible to form a stepped pattern, which facilitates control.
【００１０】[0010]
〈実施例１〉ｍ，ｐ−クレゾールノボラック樹脂（分子
量約１万）１００重量部，ポリビニルフェノールをテト
ラヒドロピラニル基で保護した溶解抑制剤１２.９重量
部 ，１，２，３−トリ（メタンスルホニルオキシ）ベ
ンゼン４.７重量部 ，ベンズイミダゾール１重量部を酢
酸メトキシエチル３５４重量部に溶解し、これを孔径
０.２μｍ のテフロンメンブレムフィルタを用いて濾過
し、レジスト溶液を得た。シリコン基板上にこの組成の
レジスト液を滴下、回転塗布後１２０℃、１分間ベーク
して１μｍのレジスト膜を形成した。６００ＷＨｇ−Ｘ
ｅランプからの光を２４８ｎｍのバンドパスフィルタを
用いて２４８ｎｍの単色光が通るように６８ｍＪ／cm2
ウエハ上のフォトレジスト膜に照射した。照射後フォト
レジストを８０℃、２分間ベークし、現像液中での膜厚
変化をＨｅ−Ｎｅレーザの干渉を利用した方法で調べ
た。<Example 1> 100 parts by weight of m, p-cresol novolac resin (molecular weight of about 10,000), 12.9 parts by weight of a dissolution inhibitor obtained by protecting polyvinylphenol with a tetrahydropyranyl group, 1,2,3-tri (methane) Sulfonyloxy) benzene (4.7 parts by weight) and benzimidazole (1 part by weight) were dissolved in methoxyethyl acetate (354 parts by weight), and this was filtered using a Teflon membrane filter having a pore size of 0.2 μm to obtain a resist solution. A resist solution of this composition was dropped on a silicon substrate, spin-coated, and baked at 120 ° C. for 1 minute to form a resist film of 1 μm. 600WHg-X
The light from the e-lamp is passed through a 248 nm bandpass filter so that 248 nm monochromatic light passes through 68 mJ / cm 2
The photoresist film on the wafer was irradiated. After the irradiation, the photoresist was baked at 80 ° C. for 2 minutes, and the change in film thickness in the developing solution was examined by a method using interference of He—Ne laser.
【００１１】その結果、図１に示すように、レジストの
現像速度は５０秒のところで大きく変化し、遅くなる。
また、このレジスト膜に透過率ほぼ１００％，５０％，
０％のパタンを含むマスクを介して１３８ｍＪ／cm2 照
射した。照射後フォトレジストを８０℃、２分間ベーク
し水酸化テトラメチルアンモニウム２.３８％ 水溶液で
８０秒間現像した。その結果、透過率５０％のパタンの
残膜が４８０ｎｍとなり、段差ある良好なパタンが得ら
れた。As a result, as shown in FIG. 1, the developing speed of the resist changes greatly at 50 seconds and becomes slow.
The resist film has a transmittance of about 100%, 50%,
Irradiation was carried out at 138 mJ / cm 2 through a mask containing 0% pattern. After irradiation, the photoresist was baked at 80 ° C. for 2 minutes and developed with a 2.38% tetramethylammonium hydroxide aqueous solution for 80 seconds. As a result, the residual film of the pattern having a transmittance of 50% was 480 nm, and a good pattern having a step was obtained.
【００１２】〈実施例２〉５−アミノ−２−ナフトール
重量部を酸捕捉剤として用いた以外実施例１と同様にレ
ジスト膜をシリコンウエハ上に塗布し、透過率ほぼ１０
０％，５０％，０％のパタンを含むマスクを介して１０
９ｍＪ／cm2 照射した。８０℃、２分間ベークし水酸化
テトラメチルアンモニウム２.３８％ 水溶液で現像した
ところ、透過率５０％のパタンの残膜が５００ｎｍとな
り、段差のある良好なパタンを形成することができた。Example 2 A resist film was coated on a silicon wafer in the same manner as in Example 1 except that 5 parts by weight of 5-amino-2-naphthol was used as an acid scavenger, and the transmittance was about 10%.
10 through a mask containing 0%, 50%, 0% pattern
Irradiation was carried out at 9 mJ / cm 2 . When baked at 80 ° C. for 2 minutes and developed with a 2.38% tetramethylammonium hydroxide aqueous solution, the residual film of a pattern having a transmittance of 50% was 500 nm, and a good pattern having a step could be formed.
【００１３】〈実施例３〉４−フェニルイミダゾール１
重量部を酸捕捉剤として用いた以外実施例１と同様にレ
ジスト膜をシリコンウエハ上に塗布し、透過率ほぼ１０
０％，５０％，０％のパタンを含むマスクを介して４８
ｍＪ／cm2 照射した。８０℃、２分間ベークし水酸化テ
トラメチルアンモニウム２.３８％ 水溶液で現像したと
ころ、透過率５０％のパタンの残膜が５１２ｎｍとな
り、段差のある良好なパタンを形成することができた。<Example 3> 4-phenylimidazole 1
A resist film was applied on a silicon wafer in the same manner as in Example 1 except that parts by weight were used as an acid scavenger, and the transmittance was about 10
48 via a mask containing 0%, 50% and 0% patterns
It was irradiated with mJ / cm 2 . When baked at 80 ° C. for 2 minutes and developed with a 2.38% tetramethylammonium hydroxide aqueous solution, the residual film of a pattern having a transmittance of 50% was 512 nm, and a good pattern having a step could be formed.
【００１４】〈実施例４〉イミダゾール１重量部を酸捕
捉剤として用いた以外実施例１と同様にレジスト膜をシ
リコンウエハ上に塗布し、透過率ほぼ１００％，５０
％，０％のパタンを含むマスクを介して２０５ｍＪ／cm
2 照射した。８０℃、２分間ベークし水酸化テトラメチ
ルアンモニウム２.３８％ 水溶液で現像したところ、透
過率５０％のパタンの残膜が４８０ｎｍとなり、段差の
ある良好なパタンを形成することができた。Example 4 A resist film was coated on a silicon wafer in the same manner as in Example 1 except that 1 part by weight of imidazole was used as an acid scavenger, and the transmittance was about 100% and 50%.
205mJ / cm through a mask containing%, 0% pattern
Irradiated 2 times. When baked at 80 ° C. for 2 minutes and developed with a 2.38% tetramethylammonium hydroxide aqueous solution, the residual film of a pattern having a transmittance of 50% was 480 nm, and a good pattern having a step could be formed.
【００１５】[0015]
【発明の効果】本発明のパタン形成方法によればレジス
トの残膜が初期膜厚と初期膜厚の半分程度の残膜のある
段差のあるパタンを形成することができる。また、この
パタン形成材料を用いたパタン形成方法によれば、Ｋｒ
Ｆエキシマレーザ縮小投影露光装置を用いた露光法によ
り高解像度のパタンを形成することができる。従って、
本発明によるパタン形成方法により任意の有機物の段差
パタンを高解像度で形成することが可能となる。According to the pattern forming method of the present invention, it is possible to form a stepped pattern in which the residual film of the resist has an initial film thickness and a half of the initial film thickness. According to the pattern forming method using this pattern forming material, Kr
A high-resolution pattern can be formed by an exposure method using an F excimer laser reduction projection exposure apparatus. Therefore,
By the pattern forming method according to the present invention, it is possible to form a step pattern of an arbitrary organic material with high resolution.
【図１】本発明に係るパタン形成材料の残存膜厚と現像
時間関係を示す特性図。FIG. 1 is a characteristic diagram showing a relationship between a remaining film thickness of a pattern forming material according to the present invention and a developing time.
１…６８ｍＪ／cm2 露光したレジスト膜、２…１４０ｍ
Ｊ／cm2 露光したレジスト膜。1 ... 68 mJ / cm 2 exposed resist film, 2 ... 140 m
J / cm 2 exposed resist film.
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｇ０３Ｆ 7/20 ５２１ 7818−2Ｈ 7/30 7124−2Ｈ Ｈ０１Ｌ 21/027 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification number Office reference number FI technical display location G03F 7/20 521 7818-2H 7/30 7124-2H H01L 21/027
Claims (8)
剤，酸前駆体，酸捕捉剤からなる化学増幅系レジスト組
成物の塗膜であって、溶解速度がその塗膜の途中で変わ
ることを特徴とするパタン形成材料。1. A coating film of a chemically amplified resist composition comprising an alkali-soluble phenol resin, a dissolution inhibitor, an acid precursor and an acid scavenger, wherein the dissolution rate changes in the middle of the coating film. Pattern forming material.
ール性水酸基を２個以上有する化合物とアルキルスルホ
ン酸とのエステルであるパタン形成材料。2. The pattern forming material according to claim 1, wherein the acid precursor is an ester of a compound having two or more phenolic hydroxyl groups and an alkylsulfonic acid.
ノール性水酸基を有する化合物，高分子のフェノール性
水酸基をテトラヒドロピラニル基，ｔ−ブトキシカルボ
ニル基で保護した化合物，高分子から少なくとも一種類
選ばれた溶解抑制剤であるパタン形成材料。3. The compound according to claim 1, wherein the dissolution inhibitor is a compound having a phenolic hydroxyl group, a compound in which a phenolic hydroxyl group of a polymer is protected by a tetrahydropyranyl group or a t-butoxycarbonyl group, and at least one type of polymer. A pattern forming material that is a selected dissolution inhibitor.
から少なくとも一種類選ばれた化合物であるパタン形成
材料。4. The pattern forming material according to claim 1, wherein the acid scavenger is a compound selected from at least one kind of amine.
剤，酸前駆体，酸捕捉剤からなるパタン形成材料の塗膜
を形成する工程と、活性化学線を用いて上記塗膜に透過
率の異なるパタンを有するマスクを介して所望のパタン
潜像を形成する工程と、上記パタン潜像形成部のアルカ
リ水溶液に対する溶解性を変化させる反応を促進する工
程と、アルカリ水溶液を現像液として上記所定パタンを
現像する工程を含むパタン形成に段差のあるパタンを形
成することを特徴とするパタン形成法。5. A step of forming a coating film of a pattern forming material comprising an alkali-soluble phenol resin, a dissolution inhibitor, an acid precursor and an acid scavenger, and a pattern having a different transmittance to the coating film by using active actinic radiation. Forming a desired pattern latent image through a mask having a pattern, a step of accelerating a reaction that changes the solubility of the pattern latent image forming part in an alkaline aqueous solution, and developing the predetermined pattern using the alkaline aqueous solution as a developing solution. A pattern forming method comprising forming a pattern having a step in the step of forming a pattern.
ール性水酸基を２個以上有する化合物とアルキルスルホ
ン酸とのエステルであるパタン形成法。6. The pattern forming method according to claim 1, wherein the acid precursor is an ester of a compound having two or more phenolic hydroxyl groups and an alkylsulfonic acid.
ノール性水酸基を有する化合物，高分子のフェノール性
水酸基をテトラヒドロピラニル基，ｔ−ブトキシカルボ
ニル基で保護した化合物，高分子から少なくとも一種類
選ばれた溶解抑制剤であるパタン形成法。7. The compound according to claim 1, wherein the dissolution inhibitor is a compound having a phenolic hydroxyl group, a compound in which a phenolic hydroxyl group of a polymer is protected with a tetrahydropyranyl group or a t-butoxycarbonyl group, and at least one type of polymer. A pattern formation method that is a selected dissolution inhibitor.
から少なくとも一種類選ばれた化合物であるパタン形成
法。8. The pattern forming method according to claim 1, wherein the acid scavenger is a compound selected from at least one kind of amine.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4090609A JPH05289322A (en) | 1992-04-10 | 1992-04-10 | Pattern forming material and method for forming pattern using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4090609A JPH05289322A (en) | 1992-04-10 | 1992-04-10 | Pattern forming material and method for forming pattern using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH05289322A true JPH05289322A (en) | 1993-11-05 |
Family
ID=14003223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4090609A Pending JPH05289322A (en) | 1992-04-10 | 1992-04-10 | Pattern forming material and method for forming pattern using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH05289322A (en) |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948589A (en) * | 1995-06-15 | 1999-09-07 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working photoresist composition |
| US6042988A (en) * | 1996-12-26 | 2000-03-28 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-amplification-type negative resist composition |
| US6274286B1 (en) | 1997-06-26 | 2001-08-14 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
| US6673511B1 (en) | 1999-10-29 | 2004-01-06 | Shin-Etsu Chemical Co., Ltd. | Resist composition |
| US6790591B2 (en) * | 2002-04-05 | 2004-09-14 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6824955B2 (en) | 2001-12-26 | 2004-11-30 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6866983B2 (en) * | 2002-04-05 | 2005-03-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| EP1522891A1 (en) | 2003-10-08 | 2005-04-13 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
| US6919161B2 (en) | 2002-07-02 | 2005-07-19 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing polymer, resist composition and patterning process |
| US6946235B2 (en) | 2002-08-09 | 2005-09-20 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6994946B2 (en) | 2003-05-27 | 2006-02-07 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing polymer, resist composition and patterning process |
| US7001707B2 (en) | 2003-08-26 | 2006-02-21 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| EP1628159A2 (en) | 2004-08-18 | 2006-02-22 | Fuji Photo Film Co., Ltd. | Chemical amplification resist composition and pattern-forming method using the same |
| US7141352B2 (en) | 2003-05-21 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Basic compound, resist composition and patterning process |
| US7141351B2 (en) | 2003-05-21 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Basic compound, resist composition and patterning process |
| US7179581B2 (en) | 2003-05-21 | 2007-02-20 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US7192684B2 (en) | 2002-09-30 | 2007-03-20 | Shin-Etsu Chemical Co., Ltd. | Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process |
| US7232638B2 (en) | 2002-05-02 | 2007-06-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US7252925B2 (en) | 2003-10-29 | 2007-08-07 | Shin-Etsu Chemical Co., Ltd. | Nitrogen-containing organic compound, resist composition and patterning process |
| JP2007242710A (en) * | 2006-03-06 | 2007-09-20 | Toppan Printing Co Ltd | Resist pattern simulation method |
| US7276324B2 (en) | 2003-11-14 | 2007-10-02 | Shin-Etsu Chemical Co., Ltd. | Nitrogen-containing organic compound, resist composition and patterning process |
| EP2296039A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
| US7977027B2 (en) | 2006-10-20 | 2011-07-12 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
-
1992
- 1992-04-10 JP JP4090609A patent/JPH05289322A/en active Pending
Cited By (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5948589A (en) * | 1995-06-15 | 1999-09-07 | Tokyo Ohka Kogyo Co., Ltd. | Positive-working photoresist composition |
| US6042988A (en) * | 1996-12-26 | 2000-03-28 | Tokyo Ohka Kogyo Co., Ltd. | Chemical-amplification-type negative resist composition |
| US6274286B1 (en) | 1997-06-26 | 2001-08-14 | Shin-Etsu Chemical Co., Ltd. | Resist compositions |
| US6673511B1 (en) | 1999-10-29 | 2004-01-06 | Shin-Etsu Chemical Co., Ltd. | Resist composition |
| EP2296040A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
| EP2296039A1 (en) | 2001-07-05 | 2011-03-16 | Fujifilm Corporation | Positive photosensitive composition |
| US6824955B2 (en) | 2001-12-26 | 2004-11-30 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6790591B2 (en) * | 2002-04-05 | 2004-09-14 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6866983B2 (en) * | 2002-04-05 | 2005-03-15 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| US7232638B2 (en) | 2002-05-02 | 2007-06-19 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US6919161B2 (en) | 2002-07-02 | 2005-07-19 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing polymer, resist composition and patterning process |
| US7169869B2 (en) | 2002-08-09 | 2007-01-30 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US6946235B2 (en) | 2002-08-09 | 2005-09-20 | Shin-Etsu Chemical Co., Ltd. | Polymers, resist compositions and patterning process |
| US7192684B2 (en) | 2002-09-30 | 2007-03-20 | Shin-Etsu Chemical Co., Ltd. | Polymerizable silicon-containing compound, manufacturing method, polymer, resist composition and patterning process |
| US7141351B2 (en) | 2003-05-21 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Basic compound, resist composition and patterning process |
| US7179581B2 (en) | 2003-05-21 | 2007-02-20 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
| US7141352B2 (en) | 2003-05-21 | 2006-11-28 | Shin-Etsu Chemical Co., Ltd. | Basic compound, resist composition and patterning process |
| US6994946B2 (en) | 2003-05-27 | 2006-02-07 | Shin-Etsu Chemical Co., Ltd. | Silicon-containing polymer, resist composition and patterning process |
| US7001707B2 (en) | 2003-08-26 | 2006-02-21 | Shin-Etsu Chemical Co., Ltd. | Resist compositions and patterning process |
| EP1522891A1 (en) | 2003-10-08 | 2005-04-13 | Fuji Photo Film Co., Ltd. | Positive resist composition and pattern forming method using the same |
| US7252925B2 (en) | 2003-10-29 | 2007-08-07 | Shin-Etsu Chemical Co., Ltd. | Nitrogen-containing organic compound, resist composition and patterning process |
| US7276324B2 (en) | 2003-11-14 | 2007-10-02 | Shin-Etsu Chemical Co., Ltd. | Nitrogen-containing organic compound, resist composition and patterning process |
| EP1628159A2 (en) | 2004-08-18 | 2006-02-22 | Fuji Photo Film Co., Ltd. | Chemical amplification resist composition and pattern-forming method using the same |
| EP2031445A2 (en) | 2004-08-18 | 2009-03-04 | FUJIFILM Corporation | Chemical amplification resist composition and pattern-forming method using the same |
| JP2007242710A (en) * | 2006-03-06 | 2007-09-20 | Toppan Printing Co Ltd | Resist pattern simulation method |
| US7977027B2 (en) | 2006-10-20 | 2011-07-12 | Shin-Etsu Chemical Co., Ltd. | Resist composition and patterning process |
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