JPH0518278B2 - - Google Patents

Info

Publication number
JPH0518278B2
JPH0518278B2 JP58239998A JP23999883A JPH0518278B2 JP H0518278 B2 JPH0518278 B2 JP H0518278B2 JP 58239998 A JP58239998 A JP 58239998A JP 23999883 A JP23999883 A JP 23999883A JP H0518278 B2 JPH0518278 B2 JP H0518278B2
Authority
JP
Japan
Prior art keywords
optical device
producing
optical
gas
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58239998A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59121886A (ja
Inventor
Kuwannyuu Chin Arando
Shingu Shooba
Jerarudo Uan Uitaato Regurando
Jon Zuidozuitsuku Jooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
AT&T Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AT&T Technologies Inc filed Critical AT&T Technologies Inc
Publication of JPS59121886A publication Critical patent/JPS59121886A/ja
Publication of JPH0518278B2 publication Critical patent/JPH0518278B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
JP58239998A 1982-12-21 1983-12-21 光デバイス作成方法 Granted JPS59121886A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45178982A 1982-12-21 1982-12-21
US451789 1999-12-01

Publications (2)

Publication Number Publication Date
JPS59121886A JPS59121886A (ja) 1984-07-14
JPH0518278B2 true JPH0518278B2 (enrdf_load_stackoverflow) 1993-03-11

Family

ID=23793695

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58239998A Granted JPS59121886A (ja) 1982-12-21 1983-12-21 光デバイス作成方法

Country Status (1)

Country Link
JP (1) JPS59121886A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01296676A (ja) * 1988-05-24 1989-11-30 Nec Corp 半導体受光装置
JP3326462B2 (ja) 1997-08-27 2002-09-24 仗祐 中田 球状半導体デバイスとその製造方法
WO2023148839A1 (ja) * 2022-02-02 2023-08-10 株式会社京都セミコンダクター 光半導体素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56107587A (en) * 1980-01-31 1981-08-26 Toshiba Corp End radiation type light emitting diode

Also Published As

Publication number Publication date
JPS59121886A (ja) 1984-07-14

Similar Documents

Publication Publication Date Title
US4783373A (en) Article with thin film coating having an enhanced emissivity and reduced absorption of radiant energy
US6587263B1 (en) Optical solar reflectors
JP2737041B2 (ja) 光電陰極、及びその製造方法、並びにそれを使用した暗視システム用画像増幅管
US9366816B2 (en) Adiabatic planar waveguide coupler transformer
US4582390A (en) Dielectric optical waveguide and technique for fabricating same
US4617192A (en) Process for making optical INP devices
US4311907A (en) Radiation detector having refractive index matching means
US20090032095A1 (en) Semiconductor Component And Method For Producing It and Use for It
JP5896889B2 (ja) 光学選択膜
JPS609180A (ja) 半導体光検出器の製作方法
JPH07114306B2 (ja) 光通信システム
JPH0697570A (ja) 半導体レーザー素子端面の反射鏡およびその製造方法
JPH0518278B2 (enrdf_load_stackoverflow)
CN109324362B (zh) 一种聚光反射镜及制备方法
CN118487106B (zh) 一种半导体激光芯片的腔面钝化方法
CN111627783B (zh) 一种透射式光电阴极及其制备方法和应用
JPH02504574A (ja) ２‐６族の光検出器用のセリウム酸化フッ化物反射防止被覆およびその形成方法
CA1115401A (en) Glass coating for semiconductor optical devices
JPH02240605A (ja) 端面コートされたフッ化物光ファイバ及びその製造方法
CN109167254A (zh) 内含硒化银/硒化银锌核壳量子点的垂直腔面发射激光器及其制备方法
JPS5925395B2 (ja) 光電変換素子
JPH0688978A (ja) 光ファイバー素子
JPH06125149A (ja) 半導体素子及びその製造方法
Floch et al. Porous silica sol-gel coatings for Nd: glass high-power pulsed laser uses
JPH06118211A (ja) 集積光学ミラーおよびその製造方法