JPH05136529A - Manufacturing method of photosemiconductor device - Google Patents

Abstract

PURPOSE:To simplify the jig for power-on aging step and the photo-output measuring step or facilitate the operations thereof while increasing the yield of the products. CONSTITUTION:A semiconductor laser pellet 16 and a photodetector pellet 17 monitoring the laser photo-output are mounted on the same heat sink 11. In such a state, said pellets 16, 17 are fitted to a power-on aging jig to perform the photo-output measuring step and the power-on aging step so that only acceptable pellets may be mounted in a package.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing an optical semiconductor device, and more particularly to a method for manufacturing an optical semiconductor device including a current test for a semiconductor laser pellet.

[0002]

2. Description of the Related Art A conventional method for manufacturing an optical semiconductor device is as follows. First, the semiconductor laser pellet is mounted on the heat sink, and the light receiving element pellet is mounted on the stem.
Next, a heat sink having a laser pellet mounted thereon is mounted on the stem. A solder is used to mount each of the pellet and the heat sink. Next, the electrode of the pellet and the stem lead are connected by wire bonding. Then, the assembly is completed by sealing with a cap. Next, the laser pellet is subjected to optical output measurement and current aging to complete the manufacture of the semiconductor laser device.

[0003]

In the above-described conventional manufacturing method, since energization aging is performed after the completed product is assembled, there is a problem that mass productivity is poor and the energization device becomes large-scale and expensive. there were.

Further, in the conventional manufacturing method, since there is a high rate of failure after the assembly is completed and the current aging is completed, many materials are wasted. In particular, communication laser devices are often custom-made, and a wide variety of packages and various characteristic standards are required. Therefore, conventional manufacturing methods often suffer from out-of-specification and cannot reduce yield. ..

[0005]

A method of manufacturing an optical semiconductor device according to the present invention comprises a step of mounting a semiconductor laser pellet and a light-receiving element pellet for monitoring the optical output of the laser pellet on the same heat sink, and a step of mounting the pellet on a heat sink. A step of conducting an energization test of the semiconductor laser pellet in a closed state,
Measuring the optical output of the semiconductor laser pellets using the light-receiving element pellets before and / or after the current-carrying test.

[0006]

Embodiments of the present invention will now be described with reference to the drawings. FIG. 1 is a perspective view of a heat sink assembly for explaining a first embodiment of the present invention. In this embodiment, an InGaAsP long wavelength semiconductor laser is used as a light emitting element, an InGaAs ternary photodiode is used as a light receiving element, and silicon (S) is used as a heat sink material.
i) is used.

The illustrated heat sink assembly is manufactured as follows. A 1 mm thick high resistance silicon wafer is subjected to etching, dicing and the like to form a 0.25 mm thick flat portion and an inclined portion of about 45 °. Next, an oxide film is formed in order to improve the insulating property and the adhesion of the electrodes.

Next, a composite metal film made of titanium / platinum / gold is formed by sputtering, and then a laser pellet die-bonding electrode 12, a light-receiving element pellet die-bonding electrode 13, and a wire-bonding electrode are formed by using a photolithography technique. 14 and 15 are formed.

Next, the wafer is braked and separated into individual heat sinks 11. Next, the semiconductor laser pellet 16 is placed at a predetermined position on the laser pellet die-bonding electrode 12 using gold / tin solder, and then the light-receiving element pellet 17 is placed on the light-receiving element pellet die-bonding electrode 13 using gold / tin solder. Each of them is mounted and fixed at a predetermined position above. Then, the electrode of each pellet and the wire bonding electrodes 14 and 15 are connected by a bonding wire 18.

Next, a probe is applied to each electrode, a heat sink mounted with semiconductor laser pellets and light-receiving element pellets is set on a jig that can be energized, and the jig is set in a thermostatic bath. Temperature of 25 ℃
Set to. The laser pellet is energized by the laser pellet probe, the received light current is monitored by the probe for the light receiving element pellet, the optical output of the laser pellet is measured, and the oscillation threshold of the laser pellet is obtained.

Next, the temperature of the constant temperature bath is set to a high temperature of about 70 ° C. to 100 ° C., and the laser pellets are continuously subjected to energization aging for several hours to several tens hours. At this time, aging for applying a reverse voltage can be simultaneously performed on the light-receiving element pellets.

After the current aging is completed, the temperature of the constant temperature bath is set to 2
The temperature is returned to 5 ° C., and the optical output and oscillation threshold of the laser pellet are obtained in the same manner as before the current aging. Based on the light output before and after the aging of electric current, the threshold value, and the variation thereof, the laser pellets are classified into good and defective ones and graded as necessary, and only good products are sent to the subsequent assembly process.

FIG. 2 is a perspective view of a silicon bar which is a connecting body of heat sinks for explaining the second embodiment of the present invention. In this embodiment, after forming the electrodes 22, 23, 24, 25 in a silicon wafer state, the wafers are separated only in one direction, and a plurality of heat sinks 21 are connected through the heat sink separating groove 20. To create.

In this state, laser pellets, light-receiving element mounting, and wire bonding are performed, and current aging,
After completion of each measurement step, the silicon bar is separated into each heat sink 21. In this embodiment, by handling a silicon bar having a continuous heat sink like a lead frame, it is possible to easily automate the mounting process of the laser pellet and the light receiving element pellet and the wire bonding process. Further, energization aging and laser light output measurement can be similarly easily performed.

FIG. 3 is a perspective view of a heat sink for explaining the third embodiment of the present invention. In this embodiment, the die-bonding electrodes 32 and 33 or the wire-bonding electrodes 34 and 35 are commonly connected when forming the electrodes (in the illustrated example, the wire-bonding electrodes are commonly connected to each other. ).

When a three-terminal stem is used or when both the laser pellet and the light-receiving element pellet are floated from the stem, it is necessary to perform wire bonding twice on one stem lead in the heat sink of FIGS. However, in the heat sink of this embodiment, the wire bonding needs to be performed only once, so that the mass productivity is remarkably improved.

[0017]

As described above, according to the manufacturing method of the present invention, the laser pellet and the light receiving element pellet are mounted on one heat sink, and the current aging and the optical output are measured in that state. The following effects can be achieved.

The apparatus for current aging and measurement of light output is simplified, and the work therefor is facilitated.

Since only the good products after aging are packaged and the graded heat sink assembly can be mounted on the package according to the application, the yield of finished products is improved and the waste of materials is reduced. Also,
Variations in finished product characteristics are also reduced.

Since it becomes possible to measure the current aging and the optical output in a state where the heat sink is a continuous silicon bar, mass productivity is improved.

[Brief description of drawings]

FIG. 1 is a perspective view of a heat sink for explaining a first embodiment of the present invention.

FIG. 2 is a perspective view of a heat sink for explaining a second embodiment of the present invention.

FIG. 3 is a perspective view of a heat sink for explaining a third embodiment of the present invention.

[Explanation of symbols]

11, 21, 31 Heat sink 12, 22, 32 Laser pellet Die-bonding electrode 13, 23, 33 Light-receiving element pellet Die-bonding electrode 14, 15, 24, 25, 34, 35 Wire-bonding electrode 16 Semiconductor laser pellet 17 Light-receiving element pellet 18 Bonding wire 20 Heat sink separation groove

Claims (1)

[Claims] 1. A step of mounting a semiconductor laser pellet and a light-receiving element pellet for monitoring on the same heat sink, a step of conducting an energization test on the laser pellet mounted on the heat sink, and the energization. Before the test and / or after the energization test, a step of measuring the optical output of the semiconductor pellet using the light-receiving element pellets on the same heat sink is provided.