JPH0512722A - Production of stamper - Google Patents

Production of stamper

Info

Publication number
JPH0512722A
JPH0512722A JP3192429A JP19242991A JPH0512722A JP H0512722 A JPH0512722 A JP H0512722A JP 3192429 A JP3192429 A JP 3192429A JP 19242991 A JP19242991 A JP 19242991A JP H0512722 A JPH0512722 A JP H0512722A
Authority
JP
Japan
Prior art keywords
master disk
disk part
stamper
silicon
production
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3192429A
Other languages
Japanese (ja)
Inventor
Shinya Tezuka
信哉 手塚
Hisayuki Miyagawa
久行 宮川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOHOKU NAKATANI KK
Original Assignee
TOHOKU NAKATANI KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOHOKU NAKATANI KK filed Critical TOHOKU NAKATANI KK
Priority to JP3192429A priority Critical patent/JPH0512722A/en
Publication of JPH0512722A publication Critical patent/JPH0512722A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To produce the master disk for the stamper which is tough and durable and can be easily handled in the process for production of the stamper required for production of optical disks, etc. CONSTITUTION:A silicon wafer which is highly hard and is stable to an environmental change is used for the substrate of a master disk part where pits are formed. This silicon wafer 1 is successively subjected to stages for forming an SiO2 film on the wafer, spin coating of a photoresist 3, exposing with a laser beam synchronized with information signals, developing, etching of the SiO2 film 2, and anisotropic etching of the silicon 1, by which the master disk part directly formed with the pits 4 on the silicon substrate is produced. The formation of a conductive film 5, the peeling of the master disk part and an electrocasting member 6 are executed in accordance with the above-mentioned master disk part, by which the stamper is produced. The production of the many stampers from the same master disk part is possible if this method is used. The master disk part is tough and durable and can be easily handled.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は光ディスク用基盤製造に
おいて必要となるスタンパーの製造に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of stampers required in the manufacture of optical disk substrates.

【0002】[0002]

【従来の技術】従来の一般的なスタンパー作製工程を以
下に示す。ガラス原盤上に感光体であるフォトレジスト
を塗布し、このレジストに情報信号に同期したレーザー
光等で所定形状のトラッキング用案内溝、ビット等を潜
像として感光記録し、これを現像することで所定形状の
案内溝やランドを有するスタンパー電鋳用原盤部を形成
する。その後、この原盤部上にNi薄膜等を形成し、通
電処理を行って、電鋳部材にて電鋳を行ない、その結
果、電鋳部材を原盤部より剥離してスタンパーを作製す
る。
2. Description of the Related Art A conventional general stamper manufacturing process is shown below. By coating a photoresist, which is a photoconductor, on a glass master, and by photosensitically recording a tracking guide groove, bit, etc. of a predetermined shape as a latent image with a laser beam or the like synchronized with an information signal, this resist is developed. A stamper electroforming master portion having guide grooves and lands having a predetermined shape is formed. After that, a Ni thin film or the like is formed on this master part, an energization process is performed, and electroforming is performed on the electroformed member. As a result, the electroformed member is separated from the master part to produce a stamper.

【0003】[0003]

【発明が解決しようとする課題】作製されたスタンパー
は、その後射出成形により製品となる光デスクを大量生
産されるが、通常、1枚のスタンパーから成形されるデ
ィスクの数は1万枚程度であるため同じスタンパーを数
枚用意するのが普通である。従来の技術では、同じ原盤
部から電鋳,剥離を繰り返し行い複数枚のスタンパーを
作製しようとすると、フォトレジストの堅さが弱いため
に、原盤部に形成されているフォトレジストの情報信号
の凹凸が潰れてしまう。また、フォトレジストは温度や
湿度の変化に対して寸法が不安定になりやすいことや、
溶剤に弱い等の耐久性の問題がある。
The produced stamper is subsequently mass-produced as an optical desk as a product by injection molding. Normally, the number of disks molded from one stamper is about 10,000. Therefore, it is usual to prepare several same stampers. According to the conventional technique, when electroforming and peeling are repeatedly performed from the same master part to manufacture a plurality of stampers, the rigidity of the photoresist is weak, so that the unevenness of the information signal of the photoresist formed on the master part is small. Will be crushed. In addition, the size of photoresist tends to be unstable with respect to changes in temperature and humidity.
There is a problem of durability such as weakness in solvent.

【0004】通電処理は、スパッタリングによりNi薄
膜を着けるのが普通となっているが、フォトレジストは
スパッタリング中の熱によって変形しやすい等の問題が
ある。
In the energization process, it is usual to deposit a Ni thin film by sputtering, but there is a problem that the photoresist is easily deformed by heat during sputtering.

【0005】[0005]

【課題を解決するための手段】本発明は、原盤部の基盤
に酸化膜を施したシリコンウエハーを用いる。そのシリ
コンウエハー上に従来の技術同様にフォトレジストをス
ピンコートし、情報信号に同期したレーザー光を照射し
て現像後ビットを形成する。それをフッ酸等で酸化膜を
エッチングして酸化膜のビットを形成する。次に、適当
なアルカリ性の水溶液で異方性エッチングを行うことに
よりシリコン基盤上に直接ビットを形成する。このシリ
コンの湿式の異方性エッチングはマイクロマシーニング
の分野等で一般的に使われている方法で、シリコンの単
結晶を適当なアルカリ性の水溶液を用いて湿式のエッチ
ングを行うと(100)面や(110)面に対して(1
11)面のエッチング速度が非常に遅いために異方性が
現れる。
According to the present invention, a silicon wafer having an oxide film formed on a base of a master is used. A photoresist is spin-coated on the silicon wafer as in the conventional technique, and a laser beam synchronized with an information signal is irradiated to form a bit after development. The oxide film is etched with hydrofluoric acid or the like to form oxide film bits. Next, the bits are directly formed on the silicon substrate by performing anisotropic etching with a suitable alkaline aqueous solution. This wet anisotropic etching of silicon is a method generally used in the field of micromachining and the like. When wet etching a single crystal of silicon using an appropriate alkaline aqueous solution, (100) plane is obtained. And (1) for (110) plane
11) Since the etching rate of the surface is very slow, anisotropy appears.

【0006】シリコンはレジストと比較して堅く、温度
や湿度の変化に対して安定で、溶剤や酸などの薬品に対
しても安定であるため、形成されたビットは電鋳,剥離
を繰り返してもビットが潰れるということはなく、何枚
もスタンパーを転写できる。更に、基盤であるシリコン
ウエハー上に直接情報信号であるビットを形成するので
非常に扱い安い。また、スパッタリングにより熱変形し
にくい、等の利点がある。
Since silicon is harder than resist, stable against changes in temperature and humidity, and stable against chemicals such as solvents and acids, the formed bit is repeatedly electroformed and peeled. Even if the bit does not collapse, you can transfer many stampers. Furthermore, since the bits which are the information signals are directly formed on the silicon wafer which is the base, they are very cheap to handle. Further, there is an advantage that thermal deformation is less likely to occur due to sputtering.

【0007】シリコン基盤の原盤部作製後のスタンパー
作製法は、従来通り通電処理後、電鋳部材により電鋳を
行い、電鋳部材を原盤部から剥離することによりスタン
パーを作製する。
In the stamper manufacturing method after manufacturing the master part of the silicon substrate, the stamper is manufactured by conducting electroforming with an electroformed member and peeling the electroformed member from the master part after a current-carrying treatment as usual.

【0008】[0008]

【実施例】片面が鏡面になっている面方位が(100)
面の4インチのシリコンウエハー1に熱酸化を施しSi
2膜2を0.1μm形成する(図1a)。その上にフ
ォトレジスト3をスピンコートし、プリベーキング後
(図1b)、情報信号に同期したレーザー光で露光す
る。それを現像しポストベーキングすることによりフォ
トレジストのビットを形成する(図1c)。次に緩衝フ
ッ酸を用いてSiO2膜をエッチングすることによりS
iO2膜のビットを形成する(図1d)。次にSiO2
をマスクとして水酸化カリウム水溶液を用いて異方性エ
ッチングを行うことにより、シリコン基盤上に深さ0.
3μmの台形のビット4を形成し、レジストとSiO2
膜を除去して原盤部を作製する(図1e)。ビットの深
さはエッチング液の温度や濃度,時間などの条件を変え
ることにより制御される。その上に導電膜5としてNi
をスパッタリングにより0.1μm付ける(図1f)。
次に電鋳を行うことによりNi6を280μm堆積させ
(図1g)、原盤部から剥離させることによりNiのス
タンパーを作製する(図1h)。
[Example] The plane orientation in which one side is a mirror surface is (100)
4 inch silicon wafer 1 on the surface is thermally oxidized to Si
An O 2 film 2 having a thickness of 0.1 μm is formed (FIG. 1a). A photoresist 3 is spin-coated thereon, pre-baked (FIG. 1b), and then exposed with laser light synchronized with the information signal. It is developed and post-baked to form photoresist bits (FIG. 1c). Next, by etching the SiO 2 film with buffered hydrofluoric acid, S
Form the bits of the iO 2 film (FIG. 1d). Next, anisotropic etching is performed using an aqueous solution of potassium hydroxide with the SiO 2 film as a mask, so that the depth of 0.1.
3 μm trapezoidal bit 4 is formed, resist and SiO 2
The film is removed to produce a master part (FIG. 1e). The bit depth is controlled by changing conditions such as the temperature, concentration, and time of the etching solution. On top of that, Ni is used as the conductive film 5.
Of 0.1 μm by sputtering (FIG. 1f).
Next, Ni6 is deposited to a thickness of 280 μm by electroforming (FIG. 1g), and a Ni stamper is produced by peeling the Ni6 from the master part (FIG. 1h).

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の方法でスタンパーを作製した工程図
で、aはシリコンウエハー上にSiO2膜の形成、bは
フォトレジストのスピンコート、cはレーザー光による
情報信号の露光、dは緩衝フッ酸によるSiO2膜のエ
ッチング、eはシリコンの異方性エッチング、fは導通
膜としてNiをスパッタ、gはNiの電鋳、hは電鋳部
と原盤部の剥離を示している。
FIG. 1 is a process diagram of a stamper manufactured by the method of the present invention, in which a is a SiO 2 film formed on a silicon wafer, b is a photoresist spin coat, c is an exposure of an information signal by a laser beam, and d is a buffer. Etching of the SiO 2 film with hydrofluoric acid, e is anisotropic etching of silicon, f is sputtering Ni as a conductive film, g is electroforming of Ni, and h is separation of the electroformed part and the master part.

【符号の説明】[Explanation of symbols]

1 シリコンウエハー 2 SiO2膜 3 フォトレジスト 4 異方性エッチングで開けられた台形のビット 5 Niスパッタ膜 6 Ni電鋳部1 Silicon wafer 2 SiO 2 film 3 Photoresist 4 Trapezoidal bit opened by anisotropic etching 5 Ni sputtered film 6 Ni electroformed part

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 情報信号に対応する微少凹凸を有する原
盤からメッキ技術により作製されるスタンパー製造工程
において、前記原盤部にシリコンウエハーを使用するこ
とを特徴とする。
1. A silicon wafer is used for the master part in a stamper manufacturing process which is manufactured from a master having minute irregularities corresponding to an information signal by a plating technique.
【請求項2】 原盤部の情報信号に対応する微少凹凸を
シリコンや水晶などの単結晶の異方性エッチングを用い
て形成することを特徴とする。
2. A micro-concavo-convex pattern corresponding to an information signal of the master is formed by anisotropic etching of a single crystal such as silicon or quartz.
JP3192429A 1991-07-05 1991-07-05 Production of stamper Pending JPH0512722A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3192429A JPH0512722A (en) 1991-07-05 1991-07-05 Production of stamper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3192429A JPH0512722A (en) 1991-07-05 1991-07-05 Production of stamper

Publications (1)

Publication Number Publication Date
JPH0512722A true JPH0512722A (en) 1993-01-22

Family

ID=16291168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3192429A Pending JPH0512722A (en) 1991-07-05 1991-07-05 Production of stamper

Country Status (1)

Country Link
JP (1) JPH0512722A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002503556A (en) * 1998-02-17 2002-02-05 オーミク アクティエ ボラーグ Device manufacturing method
WO2004103920A1 (en) * 2003-05-22 2004-12-02 Japan Science And Technology Agency Method of fabricating mold for glass press
JP2008013417A (en) * 2006-07-07 2008-01-24 National Institute For Materials Science Method of fabricating mold for pressing glass
KR100815081B1 (en) * 2006-09-05 2008-03-20 삼성전기주식회사 Method for release treatment of stamper
JP2008176892A (en) * 2007-01-22 2008-07-31 Fujifilm Corp Manufacturing method of uneveness reverse plate

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002503556A (en) * 1998-02-17 2002-02-05 オーミク アクティエ ボラーグ Device manufacturing method
WO2004103920A1 (en) * 2003-05-22 2004-12-02 Japan Science And Technology Agency Method of fabricating mold for glass press
JP2008013417A (en) * 2006-07-07 2008-01-24 National Institute For Materials Science Method of fabricating mold for pressing glass
KR100815081B1 (en) * 2006-09-05 2008-03-20 삼성전기주식회사 Method for release treatment of stamper
JP2008176892A (en) * 2007-01-22 2008-07-31 Fujifilm Corp Manufacturing method of uneveness reverse plate

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