JPH0496334A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPH0496334A
JPH0496334A JP21483590A JP21483590A JPH0496334A JP H0496334 A JPH0496334 A JP H0496334A JP 21483590 A JP21483590 A JP 21483590A JP 21483590 A JP21483590 A JP 21483590A JP H0496334 A JPH0496334 A JP H0496334A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
composition
base
emitter
inalgaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21483590A
Other versions
JP2825325B2 (en )
Inventor
Toshiaki Kinosada
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable the strength of the electric field in a base to be improved without bringing a base resistance into increasing and an emitter injection efficiency into decreasing, and to enable a transistor to operate at a high speed, by constituting the emitter layer in a hetero-junction bipolar transistor with an AlGaAS layer, and by constituting the base layer with the composition graded layer of InAlGaAs.
CONSTITUTION: A base layer 15 comprises a composition graded InAlGaAs layer whose composition is changed slanting in its thickness direction, and is doped with a p-type or n-type impurity. Desired is as the characteristic of a device the composition slant, in which the In quantity and the Al quantity of InAlGaAS is decreased and is increased respectively in the direction of going from a substrate side to an emitter side. An emitter layer 17 comprises an AlGaAs layer doped properly with an impurity, and between the base and emitter layer, provided is a composition transition layer 16 which buffers the inconsistency of the composition between the respective layers.
COPYRIGHT: (C)1992,JPO&Japio
JP21483590A 1990-08-13 1990-08-13 Heterojunction bipolar transistor Expired - Fee Related JP2825325B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21483590A JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21483590A JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
JPH0496334A true true JPH0496334A (en) 1992-03-27
JP2825325B2 JP2825325B2 (en) 1998-11-18

Family

ID=16662327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21483590A Expired - Fee Related JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JP2825325B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371389A (en) * 1992-08-17 1994-12-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor with base layer having graded bandgap
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer
JP2013168507A (en) * 2012-02-15 2013-08-29 Nippon Telegr & Teleph Corp <Ntt> Nitride semiconductor light-emitting transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611051A (en) * 1984-06-13 1986-01-07 Agency Of Ind Science & Technol Semiconductor bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611051A (en) * 1984-06-13 1986-01-07 Agency Of Ind Science & Technol Semiconductor bipolar transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371389A (en) * 1992-08-17 1994-12-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor with base layer having graded bandgap
US5429957A (en) * 1992-08-17 1995-07-04 Matsushita Electric Industrial Co., Ltd. Method of manufacturing an heterojunction bipolar transistor
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer
JP2013168507A (en) * 2012-02-15 2013-08-29 Nippon Telegr & Teleph Corp <Ntt> Nitride semiconductor light-emitting transistor

Also Published As

Publication number Publication date Type
JP2825325B2 (en) 1998-11-18 grant

Similar Documents

Publication Publication Date Title
US20030222278A1 (en) Heterojunction bipolar transistor with zero conduction band discontinuity
JPH04229665A (en) Semiconductor light-emitting device
JPS6419771A (en) Insulated-gate bipolar transistor
JPS6455862A (en) Heterojunction transistor and manufacture thereof
JPH0334549A (en) Bipolar transistor
JPS538572A (en) Field effect type transistor
JPH03285368A (en) Gaas solar cell
JPS5823478A (en) Charge coupled device
JPH04312981A (en) High breakdown voltage semiconductor device
JPS62298181A (en) Semiconductor device
JP2001068726A (en) Light-emitting thyristor
JPS5524482A (en) Mono-cyrstalline silicon
JPS6319869A (en) Semiconductor device
JPH01231371A (en) Bipolar transistor
JPH04247664A (en) Modulated doped misfet and fabrication thereof
JPS5295984A (en) Vertical junction type field effect transistor
JPH04297082A (en) Semiconductor light emitting element and manufacture thereof
JPS63170A (en) Semiconductor device
JPS6084872A (en) Semiconductor device and manufacture thereof
JPH04152533A (en) Semiconductor device
JPH04320377A (en) Insulated gate bipolar transistor
JPH04259263A (en) Light-emitting semiconductor device
JPH04234173A (en) Protective diode of vertical type field effect transistor
JPH04192366A (en) Semiconductor device
JPS6388856A (en) Manufacture of semiconductor device

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees