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JPH0496334A - Hetero-junction bipolar transistor - Google Patents

Hetero-junction bipolar transistor

Info

Publication number
JPH0496334A
JPH0496334A JP21483590A JP21483590A JPH0496334A JP H0496334 A JPH0496334 A JP H0496334A JP 21483590 A JP21483590 A JP 21483590A JP 21483590 A JP21483590 A JP 21483590A JP H0496334 A JPH0496334 A JP H0496334A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
layer
composition
base
emitter
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21483590A
Other versions
JP2825325B2 (en )
Inventor
Toshiaki Kinosada
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To enable the strength of the electric field in a base to be improved without bringing a base resistance into increasing and an emitter injection efficiency into decreasing, and to enable a transistor to operate at a high speed, by constituting the emitter layer in a hetero-junction bipolar transistor with an AlGaAS layer, and by constituting the base layer with the composition graded layer of InAlGaAs.
CONSTITUTION: A base layer 15 comprises a composition graded InAlGaAs layer whose composition is changed slanting in its thickness direction, and is doped with a p-type or n-type impurity. Desired is as the characteristic of a device the composition slant, in which the In quantity and the Al quantity of InAlGaAS is decreased and is increased respectively in the direction of going from a substrate side to an emitter side. An emitter layer 17 comprises an AlGaAs layer doped properly with an impurity, and between the base and emitter layer, provided is a composition transition layer 16 which buffers the inconsistency of the composition between the respective layers.
COPYRIGHT: (C)1992,JPO&Japio
JP21483590A 1990-08-13 1990-08-13 Heterojunction bipolar transistor Expired - Fee Related JP2825325B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21483590A JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21483590A JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Publications (2)

Publication Number Publication Date
JPH0496334A true true JPH0496334A (en) 1992-03-27
JP2825325B2 JP2825325B2 (en) 1998-11-18

Family

ID=16662327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21483590A Expired - Fee Related JP2825325B2 (en) 1990-08-13 1990-08-13 Heterojunction bipolar transistor

Country Status (1)

Country Link
JP (1) JP2825325B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371389A (en) * 1992-08-17 1994-12-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor with base layer having graded bandgap
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer
JP2013168507A (en) * 2012-02-15 2013-08-29 Nippon Telegr & Teleph Corp <Ntt> Nitride semiconductor light-emitting transistor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611051A (en) * 1984-06-13 1986-01-07 Agency Of Ind Science & Technol Semiconductor bipolar transistor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611051A (en) * 1984-06-13 1986-01-07 Agency Of Ind Science & Technol Semiconductor bipolar transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371389A (en) * 1992-08-17 1994-12-06 Matsushita Electric Industrial Co., Ltd. Heterojunction bipolar transistor with base layer having graded bandgap
US5429957A (en) * 1992-08-17 1995-07-04 Matsushita Electric Industrial Co., Ltd. Method of manufacturing an heterojunction bipolar transistor
US6037616A (en) * 1996-12-12 2000-03-14 Nec Corporation Bipolar transistor having base contact layer in contact with lower surface of base layer
JP2013168507A (en) * 2012-02-15 2013-08-29 Nippon Telegr & Teleph Corp <Ntt> Nitride semiconductor light-emitting transistor

Also Published As

Publication number Publication date Type
JP2825325B2 (en) 1998-11-18 grant

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