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JPH0496278A - Nonvolatile semiconductor storage device - Google Patents

Nonvolatile semiconductor storage device

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Publication number
JPH0496278A
JPH0496278A JP20674390A JP20674390A JPH0496278A JP H0496278 A JPH0496278 A JP H0496278A JP 20674390 A JP20674390 A JP 20674390A JP 20674390 A JP20674390 A JP 20674390A JP H0496278 A JPH0496278 A JP H0496278A
Authority
JP
Japan
Prior art keywords
region
applied
drain
gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20674390A
Inventor
Masanobu Yoshida
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20674390A priority Critical patent/JPH0496278A/en
Publication of JPH0496278A publication Critical patent/JPH0496278A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To reduce Vth while holding excellent writing characteristic by continuously locally changing an impurity concentration in a channel region from a source region to a drain region.
CONSTITUTION: A channel is formed of a low concentration channel region 4 and a high concentration channel region 5. In order to read, 5V is applied to a control gate 10, about 1V is applied to an n-type region source 2, and 0V is applied to an n-type region drain 3. Since an impurity concentration in low in the region 4, electrons are induced in a large quantity, and a current flowing to a memory cell is increased. About 12.5V is applied to the gate 10, about 7V is applied to the source 2, and 0V is applied to the drain 3. An avalanche breakdown occurs near the drain 3, and part of electrons of generated high energy are implanted in the gate 8. Since the impurity concentration of the region 5 is optimized for wiring, implanting current to the gate 8 is not reduced.
COPYRIGHT: (C)1992,JPO&Japio
JP20674390A 1990-08-06 1990-08-06 Nonvolatile semiconductor storage device Pending JPH0496278A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20674390A JPH0496278A (en) 1990-08-06 1990-08-06 Nonvolatile semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20674390A JPH0496278A (en) 1990-08-06 1990-08-06 Nonvolatile semiconductor storage device

Publications (1)

Publication Number Publication Date
JPH0496278A true JPH0496278A (en) 1992-03-27

Family

ID=16528367

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20674390A Pending JPH0496278A (en) 1990-08-06 1990-08-06 Nonvolatile semiconductor storage device

Country Status (1)

Country Link
JP (1) JPH0496278A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685281A (en) * 1992-03-24 1994-03-25 Internatl Business Mach Corp <Ibm> Eeprom memory cell structure and its manufacturing method
JP2002026155A (en) * 2000-07-11 2002-01-25 Fujitsu Ltd Semiconductor storage device and its manufacturing method
KR100614658B1 (en) * 2005-04-18 2006-08-14 삼성전자주식회사 High voltage-transistor of a semiconductor device and method of the same
US7535053B2 (en) 1997-11-18 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0685281A (en) * 1992-03-24 1994-03-25 Internatl Business Mach Corp <Ibm> Eeprom memory cell structure and its manufacturing method
US7535053B2 (en) 1997-11-18 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JP2002026155A (en) * 2000-07-11 2002-01-25 Fujitsu Ltd Semiconductor storage device and its manufacturing method
JP4698001B2 (en) * 2000-07-11 2011-06-08 スパンション エルエルシー A semiconductor memory device
KR100614658B1 (en) * 2005-04-18 2006-08-14 삼성전자주식회사 High voltage-transistor of a semiconductor device and method of the same

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