JPH0489577A - Semiconductor acceleration sensor and manufacture thereof - Google Patents
Semiconductor acceleration sensor and manufacture thereofInfo
- Publication number
- JPH0489577A JPH0489577A JP20626490A JP20626490A JPH0489577A JP H0489577 A JPH0489577 A JP H0489577A JP 20626490 A JP20626490 A JP 20626490A JP 20626490 A JP20626490 A JP 20626490A JP H0489577 A JPH0489577 A JP H0489577A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- cantilever
- pedestal
- acceleration sensor
- semiconductor acceleration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 230000001133 acceleration Effects 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000011521 glass Substances 0.000 claims abstract description 17
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical group C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 31
- 238000000465 moulding Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 description 13
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
Landscapes
- Pressure Sensors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、特に自動車用の加速度センサとして多く用い
られている半導体加速度センサ及びその製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor acceleration sensor, which is often used as an acceleration sensor for automobiles in particular, and a method for manufacturing the same.
半導体加速度センサは、極めて小型に構成できることか
ら、自動車用等、配設空間が限定される用途に広く用い
られている。Semiconductor acceleration sensors can be configured to be extremely compact, and are therefore widely used in applications where installation space is limited, such as in automobiles.
第３図は従来の半導体加速度センサの構成を示す模式的
側面図である。図示の如〈従来の半導体加速度センサは
、シリコン等の半導体を板状に成形してなるカンチレバ
ー１と、共にシリコン製のブロックからなる台座２及び
重錘３とを備え、カンチレバー１の一端を台座２の一面
に、また他端に重錘３を、夫々接着剤４により接合し、
更に前記台座２の他面を基台５上に接着剤４により接合
して、台座２にその一端を支持されて基台５と略平行を
なして延設されたカンチレバー１の先端に重錘３を固定
した構成となっている。この半導体加速度センサは、前
記基台５を適宜の測定部位に固定し、この測定部位の加
速度を重錘３に作用せしめて用いられる。とれにより重
錘３を先端に有するカンチレバー１が撓み、このときカ
ンチレバー１に生じる歪が、該カンチレバー１中途の薄
肉部１８表面に複数の拡散抵抗により構成されたブリッ
ジ６の出力として得られ、この出力結果に基づいて前記
加速度の検出がなされる。FIG. 3 is a schematic side view showing the configuration of a conventional semiconductor acceleration sensor. As shown in the figure, a conventional semiconductor acceleration sensor includes a cantilever 1 made of a plate-shaped semiconductor such as silicon, a pedestal 2 and a weight 3 both made of silicon blocks, and one end of the cantilever 1 is attached to the pedestal. A weight 3 is bonded to one side of 2 and the other end with adhesive 4, respectively.
Further, the other surface of the pedestal 2 is bonded to the base 5 with an adhesive 4, and a weight is attached to the tip of the cantilever 1, which is supported at one end by the pedestal 2 and extends substantially parallel to the base 5. 3 is fixed. This semiconductor acceleration sensor is used by fixing the base 5 to a suitable measurement site and applying the acceleration of this measurement site to the weight 3. Due to the breakage, the cantilever 1 having the weight 3 at the tip is bent, and the strain generated in the cantilever 1 at this time is obtained as the output of the bridge 6 composed of a plurality of diffused resistors on the surface of the thin part 18 in the middle of the cantilever 1. The acceleration is detected based on the output result.
さて以上の如き構成の半導体加速度センサにおいて高精
度での加速度検出を行わせるためには、カンチレバー１
各部の寸法精度が重要であることは勿論、台座２と重錘
３との間の離隔距離が適正に保たれていることが重要で
ある。ところが従来においては、前述の如く、台座２と
重錘３とが接着剤４を用いてカンチレバー１に接合され
るため、この接合そのものに煩わしさを伴う上、夫々の
接合を両者の離隔距離の確保に留意しつつ行うという煩
雑な作業を強いられ、組立てに多大の手間を要する難点
があった。Now, in order to detect acceleration with high precision in the semiconductor acceleration sensor configured as described above, the cantilever 1
Not only is the dimensional accuracy of each part important, but it is also important that the distance between the pedestal 2 and the weight 3 is maintained appropriately. However, in the past, as mentioned above, the pedestal 2 and the weight 3 are bonded to the cantilever 1 using the adhesive 4, and this bonding itself is troublesome, and each bonding is performed by adjusting the distance between the two. The problem was that it required a lot of effort and effort to assemble, as it required complicated work to be done while paying attention to safety.
本発明は斯かる事情に鑑みてなされたものであり、台座
及び重錘のカンチレバーの適正位置への接合を容易化し
、組立て作業の簡素化を実現すると共に、高い検出精度
を保証し得る半導体加速度センサ及びその製造方法を提
供することを目的とする。The present invention has been made in view of the above circumstances, and provides a semiconductor acceleration system that facilitates the joining of the cantilever of the pedestal and the weight to the appropriate position, simplifies the assembly work, and guarantees high detection accuracy. The purpose of the present invention is to provide a sensor and a method for manufacturing the same.
本発明に係る半導体加速度センサは、台座及び重錘を共
にガラス製としたものであり、またこの半導体加速度セ
ンサを得るための本発明に係る半導体加速度センサの製
造方法は、前記台座及び前記重錘を所定長離隔して連結
する連結部と共に一体成形してなるガラス成形体を用い
、台座及び重錘夫々の接合面をカンチレバーの所定位置
に密着させて陽極接合により接合し、その後連結部を切
り離すものである。In the semiconductor acceleration sensor according to the present invention, both the base and the weight are made of glass, and the method for manufacturing the semiconductor acceleration sensor according to the present invention for obtaining this semiconductor acceleration sensor includes the base and the weight. Using a glass molded body integrally formed with a connecting part that connects the pedestal and the weight at a predetermined distance apart, the joint surfaces of the pedestal and the weight are brought into close contact with the predetermined positions of the cantilever and joined by anodic bonding, and then the connecting part is separated. It is something.
本発明においては、台座及び重錘をガラス製とし、これ
らの半導体製のカンチレバーへの陽極接合による接合を
可能とし、接着剤による接合に伴う手間を削減すると共
に、前記台座及び前記重錘を、これらのカンチレバーと
の接合面を面一に保ち、組立て後の両者の離隔距離に相
当する所定距離だけ隔てて連結する連結部と共に一体成
形してなるガラス成形体を用い、これの前記接合面を半
導体製のカンチレバーに密着させて陽極接合を実施し、
台座及び重錘を一括的にカンチレバーに接合した後連結
部を切り離す手順により、前記接合に際してのカンチレ
バーの長手方向への台座及び重錘の位置決めを容易化す
る。In the present invention, the pedestal and the weight are made of glass, making it possible to bond them to the semiconductor cantilever by anodic bonding, reducing the labor involved in bonding with adhesive, and making the pedestal and the weight, Using a glass molded body that is integrally molded with a connecting part that keeps the joint surfaces with these cantilevers flush and connected at a predetermined distance corresponding to the separation distance between the two after assembly, the joint surfaces of this are kept flush. Perform anodic bonding by placing it in close contact with a semiconductor cantilever,
By joining the pedestal and the weight to the cantilever together and then separating the connecting portion, positioning of the pedestal and the weight in the longitudinal direction of the cantilever during the joining is facilitated.
以下本発明をその実施例を示す図面に基づいて詳述する
。第１図は本発明に係る半導体加速度センサの構成を示
す模式的側面図、第２図は本発明に係る半導体加速度セ
ンサの製造方法（以下本発明方法という）の実施手順の
説明図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below based on drawings showing embodiments thereof. FIG. 1 is a schematic side view showing the configuration of a semiconductor acceleration sensor according to the present invention, and FIG. 2 is an explanatory diagram of a procedure for implementing a method for manufacturing a semiconductor acceleration sensor according to the present invention (hereinafter referred to as the method of the present invention).
第１図に示す如く、本発明方法に係る半導体加速度セン
サもまた、従来の半導体加速度センサと同様、シリコン
等の半導体を細幅の板状に成形してなり、長手方向中途
の薄肉部１ａの表面に複数の拡散抵抗によりブリッジ６
を構成しであるカンチレバー１と、ブロック状をなす台
座２及び重錘３とを備え、カンチレバー１の一端を台座
２の一面に、また他端に重錘３を接合し、更に前記台座
２の他面を基台５上に接合した構成となっており、基台
５を適宜の測定部位に固定して用いられ、重錘３に作用
する加速度によりカンチレバー１に生しる歪を、ブリッ
ジ６の出力として得て、この出力結果に基づいて前記加
速度の検出をなすものである。As shown in FIG. 1, the semiconductor acceleration sensor according to the method of the present invention is also formed by molding a semiconductor such as silicon into a narrow plate shape, like the conventional semiconductor acceleration sensor. Bridge 6 with multiple diffused resistors on the surface
It comprises a cantilever 1, a block-shaped pedestal 2, and a weight 3. One end of the cantilever 1 is connected to one surface of the pedestal 2, and the weight 3 is connected to the other end. The other side is joined to the base 5, and the base 5 is fixed to an appropriate measurement site, and the bridge 6 The acceleration is detected based on this output result.
但しこの半導体加速度センサは、従来のそれとは異なり
、台座２及び重錘３が共にガラス製であることを特徴と
しており、これらの台座２及び重錘３と半導体製のカン
チレバー１との接合が、従来の如き接着によらず、カン
チレバー１と台座２及び重錘３とを相互に密着せしめた
状態で所定の高温下に置き、両者間に電圧を印加するこ
とによりなされる接合方法、即ち陽極接合により一括的
になされていることを特徴とする。但し台座２の基台５
への接合は、従来と同様、接着剤４を用いての接着によ
りなされている。However, unlike conventional ones, this semiconductor acceleration sensor is characterized in that both the pedestal 2 and the weight 3 are made of glass, and the joining of the pedestal 2 and the weight 3 to the semiconductor cantilever 1 is A bonding method that does not rely on conventional adhesives, but instead involves placing the cantilever 1, pedestal 2, and weight 3 in close contact with each other under a predetermined high temperature, and applying a voltage between them, that is, anodic bonding. It is characterized in that it is done all at once. However, base 5 of pedestal 2
The connection is made by bonding using adhesive 4, as in the past.
以上の如き半導体加速度センサを得るための本発明方法
の実施に際しては、第２図（ａ）に示す如く、半導体製
のカンチレバー１と共に、台座２となる第１の部分２ａ
と、重錘３となる第２の部分３ａとを、連結部１０にて
連結してなるガラス成形体１）を用いる。図示の如く、
前記第１．第２の部分２ａ 、 ３ａの連結部１０によ
る連結は、両者が組立て後の台座２と重錘３との適正な
離隔距離に相当する所定距離Ａだけ離れ、また、第１．
第２の部分２ａ、３ａにおけるカンチレバー１との接合
面２ｂ、３ｂを面一としてなされている。このような構
成のガラス成形体１）は、第２図（′ｂ）に示す如く、
第１の部分２ａ側の端縁をカンチレバー１の対応する側
の端縁に整合させ、該カンチレバー１の一面に前記整合
面２ｂ、３ｂを密着せしめ、所定の高温下での電圧印加
により陽極接合される。即ちこの過程により、台座２と
なる第１の部分２ａと重錘３となる第２の部分３ａとが
、カンチレバー１の一面に一括的に接合されたことにな
り、またこのとき、第１．第２の部分２ａ。When carrying out the method of the present invention for obtaining the semiconductor acceleration sensor as described above, as shown in FIG.
A glass molded body 1) is used in which a second portion 3a serving as a weight 3 is connected at a connecting portion 10. As shown,
Said 1st. The connection between the second parts 2a and 3a by the connection part 10 is such that they are separated by a predetermined distance A corresponding to the appropriate distance between the pedestal 2 and the weight 3 after assembly, and the first part 2a and the second part 3a are connected by the connection part 10.
The joint surfaces 2b and 3b of the second portions 2a and 3a with the cantilever 1 are flush with each other. The glass molded body 1) having such a structure is as shown in FIG. 2('b).
The edge on the first portion 2a side is aligned with the edge on the corresponding side of the cantilever 1, the alignment surfaces 2b and 3b are brought into close contact with one surface of the cantilever 1, and anodic bonding is performed by applying a voltage at a predetermined high temperature. be done. That is, through this process, the first portion 2a that will become the pedestal 2 and the second portion 3a that will become the weight 3 are collectively joined to one surface of the cantilever 1. Second part 2a.
３８間の離隔距離が連結部１０により前記所定距離λに
保たれていることから、前記接合に際し、ガラス成形体
１）の端縁とカンチレバー１の端縁とを整合させるだけ
の容易な作業により、第１．第２の部分２ａ、３ａの適
正な位置への接合が可能となる。38 is maintained at the predetermined distance λ by the connecting portion 10, the joining can be done by simply aligning the edge of the glass molded body 1) and the edge of the cantilever 1. , 1st. It becomes possible to join the second portions 2a, 3a at appropriate positions.
そして本発明においては、以上の如き接合を完了した後
、第２図（Ｃ）に示す如く、ガラス成形体１）から連結
部１０を切り離すことにより、カンチレバー１の長手方
向に適正距離だけ離隔して接合されたガラス製の台座２
と重錘３とが得られ、前述の如く、この台座２の他面を
基台５上に接着剤４にて接着することにより第１図に示
す本発明に係る半導体加速度センサが構成される。In the present invention, after the above-described bonding is completed, the connecting portion 10 is separated from the glass molded body 1) so that the cantilever 1 is separated by an appropriate distance in the longitudinal direction. Glass pedestal 2
and the weight 3 are obtained, and as described above, the other surface of the pedestal 2 is adhered to the base 5 with the adhesive 4, thereby constructing the semiconductor acceleration sensor according to the present invention shown in FIG. .
以上詳述した如く本発明に係る半導体加速度センサにお
いては、台座及び重錘がガラス製であり、これらと半導
体製のカンチレバーとの接合を陽極接合によりなし得る
から、従来の接着剤による接合に比較して接合に要する
手間の削減が可能となり、また本発明方法においては、
前記台座及び前記重錘を所定長離隔して連結する連結部
と共に一体成形してなるガラス成形体を用い、これとカ
ンチレバーとを陽極接合により接合し、次いで連結部を
切り離して台座及び重錘を得るから、両者をカンチレバ
ーの長手方向に適正距離だけ離隔せしめて接合すること
が容易となり、この接合に際しての位置合わせの煩雑さ
が解消される上、離隔距離の適正化により高い検出精度
が保証される等、本発明は優れた効果を奏する。As detailed above, in the semiconductor acceleration sensor according to the present invention, the pedestal and the weight are made of glass, and the bonding between these and the semiconductor cantilever can be achieved by anodic bonding, compared to conventional bonding using adhesives. In addition, in the method of the present invention, it is possible to reduce the labor required for joining.
A glass molded body is integrally formed with a connecting portion that connects the pedestal and the weight at a predetermined distance apart, and this and the cantilever are joined by anodic bonding, and then the connecting portion is separated to separate the pedestal and the weight. This makes it easy to join the cantilevers by separating them by an appropriate distance in the longitudinal direction of the cantilever, which eliminates the complexity of alignment during this joining, and ensures high detection accuracy by optimizing the separation distance. The present invention has excellent effects such as:
第１図は本発明に係る半導体加速度センサの模式的側面
図、第２図は本発明方法の実施手順の説明図、第３図は
従来の半導体加速度センサの模式的側面図である。
１・・・カンチレバー ２・・・台座 ３・・・重
錘１０・・・連結部 １）・・・ガラス成形体なお、
図中、同一符号は同一、又は相当部分を示す。
第 １
図
１・・・カンチレバー
２・・・台座
３・・重錘
代理人 大 岩 増 雄１０・・連結
部
第
図FIG. 1 is a schematic side view of a semiconductor acceleration sensor according to the present invention, FIG. 2 is an explanatory diagram of the implementation procedure of the method of the present invention, and FIG. 3 is a schematic side view of a conventional semiconductor acceleration sensor. 1... Cantilever 2... Pedestal 3... Weight 10... Connecting part 1)... Glass molded body
In the figures, the same reference numerals indicate the same or corresponding parts. 1st Figure 1... Cantilever 2... Pedestal 3... Weight agent Masuo Oiwa 10... Connecting part diagram
Claims (2)
バーの他端に重錘を接合してなり、この重錘に作用する
加速度を、前記カンチレバーに生じる歪として検出する
半導体加速度センサにおいて、 前記台座及び前記重錘は、共にガラス製で あることを特徴とする半導体加速度センサ。(1) A semiconductor acceleration sensor comprising a weight bonded to the other end of a semiconductor cantilever whose one end is bonded to a pedestal, and which detects acceleration acting on the weight as strain generated in the cantilever, A semiconductor acceleration sensor, wherein both the base and the weight are made of glass.
所定長離隔させて連結する連結部と共に、前記台座及び
前記重錘を一体的に成形してなるガラス成形体を用い、
前記接合面を前記カンチレバーの所定位置に夫々密着さ
せ、該カンチレバーに前記台座及び前記重錘を一括的に
陽極接合した後、前記連結部を切り離すことを特徴とす
る請求項１記載の半導体加速度センサの製造方法。(2) Using a glass molded body formed by integrally molding the pedestal and the weight, together with a connecting portion that connects the cantilever with the respective joint surfaces flush with each other and spaced apart by a predetermined length,
2. The semiconductor acceleration sensor according to claim 1, wherein the bonding surfaces are brought into close contact with predetermined positions of the cantilever, and the pedestal and the weight are collectively anodically bonded to the cantilever, and then the connecting portion is separated. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20626490A JPH0489577A (en) | 1990-08-01 | 1990-08-01 | Semiconductor acceleration sensor and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20626490A JPH0489577A (en) | 1990-08-01 | 1990-08-01 | Semiconductor acceleration sensor and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0489577A true JPH0489577A (en) | 1992-03-23 |
Family
ID=16520453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20626490A Pending JPH0489577A (en) | 1990-08-01 | 1990-08-01 | Semiconductor acceleration sensor and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0489577A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999013343A1 (en) * | 1997-09-10 | 1999-03-18 | Matsushita Electric Industrial Co., Ltd. | Acceleration sensor and method of producing the same |
-
1990
- 1990-08-01 JP JP20626490A patent/JPH0489577A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999013343A1 (en) * | 1997-09-10 | 1999-03-18 | Matsushita Electric Industrial Co., Ltd. | Acceleration sensor and method of producing the same |
| US6263735B1 (en) | 1997-09-10 | 2001-07-24 | Matsushita Electric Industrial Co., Ltd. | Acceleration sensor |
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