JPH0483378A - Manufacture of chalcopyrite thin film and solar cell - Google Patents

Manufacture of chalcopyrite thin film and solar cell

Info

Publication number
JPH0483378A
JPH0483378A JP2197289A JP19728990A JPH0483378A JP H0483378 A JPH0483378 A JP H0483378A JP 2197289 A JP2197289 A JP 2197289A JP 19728990 A JP19728990 A JP 19728990A JP H0483378 A JPH0483378 A JP H0483378A
Authority
JP
Japan
Prior art keywords
element
deposited
alloy
chalcogenide element
board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2197289A
Inventor
Takashi Hirao
Masaharu Terauchi
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Priority to JP2197289A priority Critical patent/JPH0483378A/en
Publication of JPH0483378A publication Critical patent/JPH0483378A/en
Application status is Pending legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/54Material technologies
    • Y02E10/541CuInSe2 material PV cells

Abstract

PURPOSE: To improve device characteristics of a solar cell, etc., by forming a chalcopyrite thin film by a two-element depositing method with an alloy of desired composition ratio of component elements of chalcopyrite compound except chalcogenide element and chalcogenide element as deposition sources.
CONSTITUTION: A vacuum vessel 1 having two-element deposition source of a deposition source 2 of an alloy of Cu and In of component elements of chalcopyrite compound CuInSe2 at 1: 1 of atomic ratio and a deposition source 3 of Se of chalcogenide element therein, is prepared. Before depositing, a board 4 is previously heated. Thereafter, it is simultaneously deposited by the sources 2 and 3. In this case, the source 2 is set to 1100°C, and deposited until all the alloy is deposited. The source 3 is set to 350°C, and Se is continuously deposited. Excess chalcogenide element is again deposited to a stoichiometric ratio on the board, and so set that the arriving amount of the chalcogenide element at the board to the arriving amount of the alloy of the component elements of the chalcopyrite compound except the chalcogenide element at the board becomes stoichiometric ratio or more.
COPYRIGHT: (C)1992,JPO&Japio
JP2197289A 1990-07-25 1990-07-25 Manufacture of chalcopyrite thin film and solar cell Pending JPH0483378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2197289A JPH0483378A (en) 1990-07-25 1990-07-25 Manufacture of chalcopyrite thin film and solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2197289A JPH0483378A (en) 1990-07-25 1990-07-25 Manufacture of chalcopyrite thin film and solar cell

Publications (1)

Publication Number Publication Date
JPH0483378A true JPH0483378A (en) 1992-03-17

Family

ID=16371989

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2197289A Pending JPH0483378A (en) 1990-07-25 1990-07-25 Manufacture of chalcopyrite thin film and solar cell

Country Status (1)

Country Link
JP (1) JPH0483378A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012046746A1 (en) * 2010-10-05 2012-04-12 株式会社神戸製鋼所 METHOD FOR MANUFACTURING LIGHT ABSORBING LAYER FOR COMPOUND SEMICONDUCTOR THIN-FILM SOLAR CELL AND In-Cu ALLOY SPUTTERING TARGET

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012046746A1 (en) * 2010-10-05 2012-04-12 株式会社神戸製鋼所 METHOD FOR MANUFACTURING LIGHT ABSORBING LAYER FOR COMPOUND SEMICONDUCTOR THIN-FILM SOLAR CELL AND In-Cu ALLOY SPUTTERING TARGET

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