JPH04765A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH04765A
JPH04765A JP10092890A JP10092890A JPH04765A JP H04765 A JPH04765 A JP H04765A JP 10092890 A JP10092890 A JP 10092890A JP 10092890 A JP10092890 A JP 10092890A JP H04765 A JPH04765 A JP H04765A
Authority
JP
Japan
Prior art keywords
tungsten
monosilane
deposited
contact layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10092890A
Other languages
Japanese (ja)
Inventor
Norihisa Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10092890A priority Critical patent/JPH04765A/en
Publication of JPH04765A publication Critical patent/JPH04765A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve a forward rise voltage of a Schottky barrier diode by forming, on the desired region on an N-type semiconductor substrate, a contact layer consisting of tungsten or that including silicon using tungsten hexafluoride as a source gas and monosilane as a reduction gas.
CONSTITUTION: After electrode contact windows 4A, 4B are formed on an insulating film 3 on an N-type semiconductor substrate, a contact layer 5A of tungsten or that including silicon is deposited, on the insulating film including the internal surface of electrode contact windows, by chemical vapor deposition method using tungsten hexafluoride as a source gas and monosilane as a reduction gas. On this contact layer, a barrier layer 5B is deposited and an electrode wiring layer 5C of aluminum or an alloy mainly formed by aluminum is then deposited also. Thereafter, Schottky diode electrodes 5, 6 are formed by simultaneously patterning the barrier layer and contact layer. A mixing ratio of tungsten hexafluoride and monosilane is controlled to the range of 5:1 to 1:1 in terms of flowrate ratio in order to control a forward rise voltage of the Schottky barrier diode.
COPYRIGHT: (C)1992,JPO&Japio
JP10092890A 1990-04-17 1990-04-17 Manufacture of semiconductor device Pending JPH04765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10092890A JPH04765A (en) 1990-04-17 1990-04-17 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10092890A JPH04765A (en) 1990-04-17 1990-04-17 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH04765A true JPH04765A (en) 1992-01-06

Family

ID=14287016

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10092890A Pending JPH04765A (en) 1990-04-17 1990-04-17 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH04765A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962880A (en) * 1986-09-30 1990-10-16 Showa Aluminum Kabushiki Kaisha Method of forming a heat exchanger with components comprising an aluminum alloy containing reduced amounts of magnesium
JPH0722414A (en) * 1993-07-01 1995-01-24 Nec Corp Manufacture of semiconductor device
US6069335A (en) * 1997-03-12 2000-05-30 Mitsubishiki Denki Kabushiki Kaisha Electric discharge machine

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4962880A (en) * 1986-09-30 1990-10-16 Showa Aluminum Kabushiki Kaisha Method of forming a heat exchanger with components comprising an aluminum alloy containing reduced amounts of magnesium
JPH0722414A (en) * 1993-07-01 1995-01-24 Nec Corp Manufacture of semiconductor device
US6069335A (en) * 1997-03-12 2000-05-30 Mitsubishiki Denki Kabushiki Kaisha Electric discharge machine

Similar Documents

Publication Publication Date Title
JPS61258453A (en) Manufacture of semiconductor device
JPH0425175A (en) Diode
JPS6156474A (en) Manufacture of gallium nitride semiconductor device
JPS61133646A (en) Manufacture of semiconductor device
JPH04765A (en) Manufacture of semiconductor device
JPS62283625A (en) Manufacture of electrode of semiconductor device
JPH0350730A (en) Semiconductor device
JPS5583253A (en) Semiconductor device
JPH02170423A (en) Semiconductor device and its manufacture
JPS5575276A (en) 3[5 group compound semiconductor device
JPH03278480A (en) Thin film semiconductor device
JPH04192562A (en) Semiconductor device and its manufacture
JPH04294530A (en) Manufacture of semiconductor device
JPH02119145A (en) Formation of metal-oxide-semiconductor junction
JPH02271632A (en) Semiconductor device
JPH03203379A (en) Field effect transistor
JPS58197876A (en) Semiconductor device
JPH03171776A (en) Thin film transistor and manufacture thereof
JPH04155823A (en) Semiconductor device and manufacture thereof
JPS6312169A (en) Manufacture of semiconductor device
JPS6068614A (en) Manufacture of semiconductor device
JPH01289169A (en) Thin film transistor
JPH01255220A (en) Manufacture of semiconductor device
JPH01282862A (en) Semiconductor device
JPS62128151A (en) Manufacture of semiconductor integrated circuit device