JPH0472622A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPH0472622A
JPH0472622A JP18392090A JP18392090A JPH0472622A JP H0472622 A JPH0472622 A JP H0472622A JP 18392090 A JP18392090 A JP 18392090A JP 18392090 A JP18392090 A JP 18392090A JP H0472622 A JPH0472622 A JP H0472622A
Authority
JP
Japan
Prior art keywords
film
thickness
amorphous
semiconductor
sio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18392090A
Other languages
Japanese (ja)
Inventor
Shinpei Iijima
Yoshifumi Kawamoto
Toshiyuki Mine
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP18392090A priority Critical patent/JPH0472622A/en
Publication of JPH0472622A publication Critical patent/JPH0472622A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the yield of the manufacture of a semiconductor device by a method wherein in a process, in which a single crystal Si film and an amorphous Si film coexist, the single crystal Si film only is selectively etched.
CONSTITUTION: An SiO2 film 102 of a thickness of 100nm is formed on an Si substrate 101 by a thermal oxidation method and thereafter, a polycrystalline Si film 103 (a) and an SiO2 film 104 are respectively deposited in a thickness of 200nm and a thickness of 20nm by a CVD method and resist patterns 105 are processed into a desired form. Then, Si+ ions are implanted in exposed parts of the films 104 and 103(a) using an ion implantation method and parts of the film 103(a) are brought into the state of amorphous regions 103(b). Then, after the photoresist patterns 105 are removed, the film 104 is removed with a hydrofluoric acid aqueous solution. Then, when the film 103 is etched with a hydrazine-containing aqueous solution, the regions 103(b) only brought into an amorphous state by the ion implantation method are left.
COPYRIGHT: (C)1992,JPO&Japio
JP18392090A 1990-07-13 1990-07-13 Semiconductor device and manufacture thereof Pending JPH0472622A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18392090A JPH0472622A (en) 1990-07-13 1990-07-13 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18392090A JPH0472622A (en) 1990-07-13 1990-07-13 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPH0472622A true JPH0472622A (en) 1992-03-06

Family

ID=16144127

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18392090A Pending JPH0472622A (en) 1990-07-13 1990-07-13 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPH0472622A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300833A (en) * 2007-05-29 2008-12-11 Qimonda Ag Method of manufacturing structure on substrate or in substrate, imaging layer for generating sublithographic structure, method of inverting sublithographic pattern, and device obtainable by manufacturing structure
JP2009065093A (en) * 2007-09-10 2009-03-26 Toshiba Corp Manufacturing method for semiconductor device
US10471479B2 (en) 2012-12-28 2019-11-12 SCREEN Holdings Co., Ltd. Treatment device and exhaust switching device therefor, and exhaust switching unit and switching valve box

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300833A (en) * 2007-05-29 2008-12-11 Qimonda Ag Method of manufacturing structure on substrate or in substrate, imaging layer for generating sublithographic structure, method of inverting sublithographic pattern, and device obtainable by manufacturing structure
JP2009065093A (en) * 2007-09-10 2009-03-26 Toshiba Corp Manufacturing method for semiconductor device
US10471479B2 (en) 2012-12-28 2019-11-12 SCREEN Holdings Co., Ltd. Treatment device and exhaust switching device therefor, and exhaust switching unit and switching valve box

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