JPH0461276A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0461276A
JPH0461276A JP16978290A JP16978290A JPH0461276A JP H0461276 A JPH0461276 A JP H0461276A JP 16978290 A JP16978290 A JP 16978290A JP 16978290 A JP16978290 A JP 16978290A JP H0461276 A JPH0461276 A JP H0461276A
Authority
JP
Japan
Prior art keywords
formed
soi
effect transistor
field effect
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16978290A
Inventor
Seiichiro Kawamura
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16978290A priority Critical patent/JPH0461276A/en
Publication of JPH0461276A publication Critical patent/JPH0461276A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors
    • H01L29/66772Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates

Abstract

PURPOSE: To manufacture an ultrathin film SOI/MOS type field effect transistor with an excellent working film controllability by a self-alignment technique without reducing a source.drain withstand voltage by ion implanting oxygen after a gate oxide film or a gate electrode of an SOT/MOS type field effect transistor is formed.
CONSTITUTION: After using an SIMOX (Separation by Implanted Oxygen) method, an SOI/MOS type field effect transistor is formed on an SOI (Silicon on Insulator) substrate. For example, an element separating field oxide film 5 is formed on a p-type silicon substrate 4 by using a LOCOS method, and then thermally oxidized to form a gate oxide film 6. Then, a polycrystalline silicon layer is formed by using a CVD method, patterned to form a gate electrode 3, and ten oxygen ions are implanted.
COPYRIGHT: (C)1992,JPO&Japio
JP16978290A 1990-06-29 1990-06-29 Manufacture of semiconductor device Pending JPH0461276A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16978290A JPH0461276A (en) 1990-06-29 1990-06-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16978290A JPH0461276A (en) 1990-06-29 1990-06-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0461276A true JPH0461276A (en) 1992-02-27

Family

ID=15892771

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16978290A Pending JPH0461276A (en) 1990-06-29 1990-06-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0461276A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0747940A2 (en) * 1995-06-07 1996-12-11 Sgs-Thomson Microelectronics, Inc. Fully-dielectric-isolated FET technology

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5981318A (en) * 1995-02-28 1999-11-09 Stmicroelectronics, Inc. Fully-dielectric-isolated FET technology
US6291845B1 (en) 1995-02-28 2001-09-18 Stmicroelectronics, Inc. Fully-dielectric-isolated FET technology
EP0747940A2 (en) * 1995-06-07 1996-12-11 Sgs-Thomson Microelectronics, Inc. Fully-dielectric-isolated FET technology
EP0747940A3 (en) * 1995-06-07 1999-05-06 Sgs-Thomson Microelectronics, Inc. Fully-dielectric-isolated FET technology

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