JPH0458556A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH0458556A
JPH0458556A JP2170735A JP17073590A JPH0458556A JP H0458556 A JPH0458556 A JP H0458556A JP 2170735 A JP2170735 A JP 2170735A JP 17073590 A JP17073590 A JP 17073590A JP H0458556 A JPH0458556 A JP H0458556A
Authority
JP
Japan
Prior art keywords
polycrystalline semiconductor
doped
short
particle diameter
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2170735A
Inventor
Hideharu Nakajima
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2170735A priority Critical patent/JPH0458556A/en
Publication of JPH0458556A publication Critical patent/JPH0458556A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To prevent interlayer short-circuiting regardless of a polycrystalline protrusion with a large particle diameter by enabling impurities which are doped into first and second low resistivity polycrystalline semiconductor layers to be of mutually different conductivity types and achieving a backward bias operation between both layers constantly.
CONSTITUTION: When a switching transistor of a memory cell is of n-channel type MOS configuration, an n-channel impurity is doped into a second polycrystalline semiconductor later which forms a capacitor electrode 5. Then, P-type impurities of different conductivity types are doped to a first polycrystalline semiconductor layer constituting a transfer gate electrode 3. Then, the gate electrode 3 is in depletion type configuration so that a negative voltage is applied to the capacitor electrode 5, thus enabling reliability and yield to be improved avoiding short-circuiting even if protrusion due to a polycrystal of a large particle diameter exists at the polycrystalline semiconductor layer and a distance between electrodes is 0 or short.
COPYRIGHT: (C)1992,JPO&Japio
JP2170735A 1990-06-28 1990-06-28 Semiconductor device Pending JPH0458556A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2170735A JPH0458556A (en) 1990-06-28 1990-06-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2170735A JPH0458556A (en) 1990-06-28 1990-06-28 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH0458556A true JPH0458556A (en) 1992-02-25

Family

ID=15910418

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2170735A Pending JPH0458556A (en) 1990-06-28 1990-06-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH0458556A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734479B1 (en) 1998-12-01 2004-05-11 Hitachi, Ltd. Semiconductor integrated circuit device and the method of producing the same
US6900492B2 (en) * 2001-07-11 2005-05-31 Hitachi, Ltd. Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734479B1 (en) 1998-12-01 2004-05-11 Hitachi, Ltd. Semiconductor integrated circuit device and the method of producing the same
US6900492B2 (en) * 2001-07-11 2005-05-31 Hitachi, Ltd. Integrated circuit device with P-type gate memory cell having pedestal contact plug and peripheral circuit

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