JPH0457324A - Vacuum treating equipment - Google Patents
Vacuum treating equipmentInfo
- Publication number
- JPH0457324A JPH0457324A JP16666790A JP16666790A JPH0457324A JP H0457324 A JPH0457324 A JP H0457324A JP 16666790 A JP16666790 A JP 16666790A JP 16666790 A JP16666790 A JP 16666790A JP H0457324 A JPH0457324 A JP H0457324A
- Authority
- JP
- Japan
- Prior art keywords
- specimen
- sample
- imperfect
- clearance
- vacuum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006073 displacement reaction Methods 0.000 claims abstract description 6
- 238000009434 installation Methods 0.000 claims description 12
- 238000001816 cooling Methods 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 7
- 238000001020 plasma etching Methods 0.000 abstract description 3
- 238000009489 vacuum treatment Methods 0.000 abstract 3
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000000112 cooling gas Substances 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/002—Component parts of these vessels not mentioned in B01J3/004, B01J3/006, B01J3/02 - B01J3/08; Measures taken in conjunction with the process to be carried out, e.g. safety measures
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、真空処理装置に係り、特に半導体素子基板等
の試料を真空下で冷却又は加熱して処理するのに好適な
真空処理装置に関するものである。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a vacuum processing apparatus, and particularly to a vacuum processing apparatus suitable for processing samples such as semiconductor element substrates by cooling or heating them under vacuum. It is something.
試料を真空下で冷却又は加熱して処理する装置では、試
料台の真空処理室内にある試料設置面に試料が設置され
、該試料は、冷却又は加熱される試料台を介して冷却又
は加熱される。このとき、試料の冷却又は加熱効率を向
上させるために、試料膜を面と試料の裏面との間にはヘ
リウムガス等の熱伝導性の良好な伝熱ガスが送給される
。In an apparatus that processes a sample by cooling or heating it in a vacuum, the sample is placed on a sample installation surface in a vacuum processing chamber of a sample stage, and the sample is cooled or heated via the sample stage that is cooled or heated. Ru. At this time, in order to improve cooling or heating efficiency of the sample, a heat transfer gas having good thermal conductivity such as helium gas is supplied between the sample film surface and the back surface of the sample.
なお、この種の装置としては、例えば、特開昭５６−４
８１３２号、特開昭６１−２６０６３４号等が挙げられ
る。Note that this type of device is, for example, disclosed in Japanese Unexamined Patent Publication No. 56-4
No. 8132, JP-A No. 61-260634, and the like.
上記従来技術では、試料台の試料設置面と試料の裏面と
のクリアランスを測定する点について配慮されておらず
、例えば、送給される伝熱ガスの圧力上昇を検出するこ
とで、そのクリアランスは間接的に検出されている。こ
のため、クリアランスの検出感度が低く、真空処理され
る試料の温度制御不良、それによる試料の処理性能不良
を十分に防止できないといった問題がある。In the above conventional technology, no consideration is given to measuring the clearance between the sample mounting surface of the sample stage and the back surface of the sample. Detected indirectly. Therefore, there is a problem in that the detection sensitivity of the clearance is low, and it is not possible to sufficiently prevent defective temperature control of the sample to be vacuum processed and defective processing performance of the sample due to the defective temperature control.
本発明の目的は、クリアランスを直接検出することで、
試料の真空処理性能不良を十分に防止できる真空処理装
置を提供することにある。The purpose of the present invention is to directly detect the clearance.
An object of the present invention is to provide a vacuum processing apparatus that can sufficiently prevent defects in vacuum processing performance of samples.
（ｆｆ題を解決するための手段〕
上記目的を達成するために、試料設置面と試料の裏面と
のクリアランスを測定する手段を備えたものである。(Means for solving the ff problem) In order to achieve the above object, a means for measuring the clearance between the sample installation surface and the back surface of the sample is provided.
クリアランスの測定手段により試料設置面と試料の裏面
とのクリアランスが測定される。これにより、試料の裏
面の試料設置面への密１１度が判断できる。従って、例
えば、試料搬送不具合に対する試料の冷却又は加熱不良
や試料裏面への異物付着による試料の冷却又は加熱不良
等を試料の真空処理前に未然に把握することができ、試
料の温度制御不良による試料の真空処理性能不良を防止
することができる。The clearance measuring means measures the clearance between the sample installation surface and the back surface of the sample. This makes it possible to determine the density of 11 degrees between the back surface of the sample and the sample installation surface. Therefore, for example, it is possible to identify problems such as poor cooling or heating of the sample due to sample transportation problems, or poor cooling or heating of the sample due to foreign matter adhering to the back surface of the sample, etc., before the sample is vacuum processed. Defects in vacuum processing performance of the sample can be prevented.
以下、本発明の一実施例を第１図、第２図により説明す
る。An embodiment of the present invention will be described below with reference to FIGS. 1 and 2.
ｊ８１図、第２図で、電極１上のウェハ２は、冷却ガス
をガス流路３を通してウェハ２の裏面に導入し、圧力を
上昇させることにより、熱伝導を高め、冷却水で冷却さ
れている電極ｌを介して冷却されている。In Figure j81 and Figure 2, the wafer 2 on the electrode 1 is cooled by cooling water by introducing cooling gas to the back side of the wafer 2 through the gas flow path 3 and increasing the pressure. It is cooled through the electrode l.
そのために、ウェハ２の裏面に異物（ゴミ）が存在した
り、ウェハ２搬送不具合等により電極カバー４に乗り上
げたりした場合に、ウェハ２の裏面の圧力を所定量確保
することが不可能になり、冷却能力不足となり、プロセ
ス性能不良に至る。Therefore, if there is foreign matter (dust) on the back side of the wafer 2 or if the wafer 2 rides on the electrode cover 4 due to a transportation failure, etc., it becomes impossible to maintain a predetermined amount of pressure on the back side of the wafer 2. , resulting in insufficient cooling capacity, leading to poor process performance.
そこで、電極ｌに変位センサ５を設置（この場合、変位
センサ５は絶縁材６により電Ｗｉｉと電気的に絶縁され
ている。）し、ウェハ２と電極ｌとのクリアランスを高
周波電カフを印加しプラズマによるエツチング開始前に
測定する。そうすれば、エツチング開始前に、ウェハの
冷却性能が判断可能で、プロセス性能不良を未然に防止
できる。また、本実施例では、変位センサ５が、電ｗｉ
のウェハ設置面に複数箇所、この場合、第１図に示すよ
うに、１２０度間隔で円周上３箇所に組み込まれて設け
られているため、クリアランスの測定精度をより向上さ
せることができ、ウェハの冷却性能の判断なより適確に
行うことができる。Therefore, a displacement sensor 5 is installed on the electrode l (in this case, the displacement sensor 5 is electrically insulated from the electric Wii by an insulating material 6), and a high-frequency electric cuff is applied to maintain the clearance between the wafer 2 and the electrode l. Measure before starting plasma etching. In this way, the cooling performance of the wafer can be determined before etching starts, and process performance defects can be prevented. Further, in this embodiment, the displacement sensor 5
As shown in FIG. 1, the clearance measurement accuracy can be further improved because the clearance measurement accuracy is installed at multiple locations on the wafer installation surface, in this case, three locations on the circumference at 120 degree intervals as shown in FIG. The wafer cooling performance can be judged more accurately.
なお、本実施例に限らず、冷却又は加熱される試料台の
真空処理室内にある試料設置面と該試料設置面に設置さ
れた試料の裏面との間に伝熱ガスを送給して該試料の表
面を真空処理するようにした装置であれば、本発明は有
効に適用し得る。In addition, not limited to this example, heat transfer gas may be supplied between the sample installation surface in the vacuum processing chamber of the sample stage to be cooled or heated and the back surface of the sample placed on the sample installation surface. The present invention can be effectively applied to any device that vacuum-processes the surface of a sample.
本発明によれば、試料台の試料設置面と試料の裏面との
クリアランスを直接検出してその密着度を判断できるの
で、真空処理される試料の温度制御を良好に行うことが
でき試料の真空処理性能不良を十分に防止できる効果が
ある。According to the present invention, the degree of adhesion can be determined by directly detecting the clearance between the sample installation surface of the sample stage and the back surface of the sample, so the temperature of the sample to be vacuum processed can be well controlled. This has the effect of sufficiently preventing processing performance defects.
！Ｉ！１図は、本発明の一実施例のプラズマエツチング
装置の電極部の平面図、第２図は、第１因の人−入断面
図である。! I! FIG. 1 is a plan view of an electrode portion of a plasma etching apparatus according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view of the first factor.
Claims (1)
料設置面と該試料設置面に設置された試料の裏面との間
に伝熱ガスを送給し前記試料の表面を真空処理するよう
にした装置において、前記試料設置面と前記試料の裏面
とのクリアランスを測定する手段を備えたことを特徴と
する真空処理装置。 ２、前記クリアランス測定手段を、変位センサを有する
手段とした第１請求項に記載の真空処理装置。 ３、前記変位センサを、前記試料設置面の複数箇所に組
み込み設けた第２請求項に記載の真空処理装置。[Claims] 1. A heat transfer gas is supplied between the sample installation surface in the vacuum processing chamber of the sample stage to be cooled or heated and the back surface of the sample placed on the sample installation surface, What is claimed is: 1. A vacuum processing apparatus for performing vacuum processing on a surface of the sample, comprising means for measuring a clearance between the sample installation surface and the back surface of the sample. 2. The vacuum processing apparatus according to claim 1, wherein the clearance measuring means includes a displacement sensor. 3. The vacuum processing apparatus according to claim 2, wherein the displacement sensor is installed at a plurality of locations on the sample installation surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16666790A JPH0457324A (en) | 1990-06-27 | 1990-06-27 | Vacuum treating equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16666790A JPH0457324A (en) | 1990-06-27 | 1990-06-27 | Vacuum treating equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0457324A true JPH0457324A (en) | 1992-02-25 |
Family
ID=15835498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16666790A Pending JPH0457324A (en) | 1990-06-27 | 1990-06-27 | Vacuum treating equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0457324A (en) |
-
1990
- 1990-06-27 JP JP16666790A patent/JPH0457324A/en active Pending
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