JPH0448780A - Wiring structure and image sensor - Google Patents

Wiring structure and image sensor

Info

Publication number
JPH0448780A
JPH0448780A JP15504790A JP15504790A JPH0448780A JP H0448780 A JPH0448780 A JP H0448780A JP 15504790 A JP15504790 A JP 15504790A JP 15504790 A JP15504790 A JP 15504790A JP H0448780 A JPH0448780 A JP H0448780A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
wiring
formed
barrier metal
metal layer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15504790A
Inventor
Keiji Fujimagari
Junji Okada
Yoshihiko Sakai
Original Assignee
Fuji Xerox Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To lower the resistance at a connecting part and to lower an wiring resistance by a method wherein, at a wiring structure and at an image sensor provided with the structure, a high-melting-point metal is laid between an electrode composed mainly of a metal oxide and a wiring connected to the electrode.
CONSTITUTION: A barrier metal layer 28 composed of molybdenum(Mo) is laid between a discrete electrode 24 and a signal deriving wiring 27. Instead of molybdenum(Mo), other high-melting-point metals (e.g. Ti, TiN, Ni, Cr, Ta, W) may be used for the barrier metal layer 28. A contact hole 26 is formed in an layer insulating film 25 formed by coating a polyimide; a resist is removed. A molybdenum(Mo) film is formed and patterned; the barrier metal film 28 is formed so as to cover the bottom part of each contact hole 26. Then, an aluminum(Al) film is formed and patterned; the signal deriving wiring 27 connected to each discrete electrode 24 is formed via the barrier metal layer 28. When the barrier metal layer 28 is laid, it is possible to prevent Al from being diffused and to ensure the good electrical connection of the discrete electrode 24 to the signal deriving wiring 27.
COPYRIGHT: (C)1992,JPO&Japio
JP15504790A 1990-06-15 1990-06-15 Wiring structure and image sensor Pending JPH0448780A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15504790A JPH0448780A (en) 1990-06-15 1990-06-15 Wiring structure and image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15504790A JPH0448780A (en) 1990-06-15 1990-06-15 Wiring structure and image sensor

Publications (1)

Publication Number Publication Date
JPH0448780A true true JPH0448780A (en) 1992-02-18

Family

ID=15597513

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15504790A Pending JPH0448780A (en) 1990-06-15 1990-06-15 Wiring structure and image sensor

Country Status (1)

Country Link
JP (1) JPH0448780A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045399B2 (en) 1992-12-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7045399B2 (en) 1992-12-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7061016B2 (en) 1992-12-09 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7105898B2 (en) 1992-12-09 2006-09-12 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7547916B2 (en) 1992-12-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US7897972B2 (en) 1992-12-09 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit
US8294152B2 (en) 1992-12-09 2012-10-23 Semiconductor Energy Laboratory Co., Ltd. Electronic circuit including pixel electrode comprising conductive film

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