JPH0447987B2 - - Google Patents

Info

Publication number
JPH0447987B2
JPH0447987B2 JP56199122A JP19912281A JPH0447987B2 JP H0447987 B2 JPH0447987 B2 JP H0447987B2 JP 56199122 A JP56199122 A JP 56199122A JP 19912281 A JP19912281 A JP 19912281A JP H0447987 B2 JPH0447987 B2 JP H0447987B2
Authority
JP
Japan
Prior art keywords
fet
region
drain
source
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56199122A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5898974A (ja
Inventor
Seishiro Yoshioka
Takao Yonehara
Yoshio Sakuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP56199122A priority Critical patent/JPS5898974A/ja
Publication of JPS5898974A publication Critical patent/JPS5898974A/ja
Publication of JPH0447987B2 publication Critical patent/JPH0447987B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6758—Thin-film transistors [TFT] characterised by the insulating substrates
    • H10D30/6759—Silicon-on-sapphire [SOS] substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6728—Vertical TFTs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP56199122A 1981-12-09 1981-12-09 縦型ｍｉｓ―ｆｅｔ Granted JPS5898974A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56199122A JPS5898974A (ja) 1981-12-09 1981-12-09 縦型ｍｉｓ―ｆｅｔ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56199122A JPS5898974A (ja) 1981-12-09 1981-12-09 縦型ｍｉｓ―ｆｅｔ

Publications (2)

Publication Number Publication Date
JPS5898974A JPS5898974A (ja) 1983-06-13
JPH0447987B2 true JPH0447987B2 (enrdf_load_stackoverflow) 1992-08-05

Family

ID=16402500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56199122A Granted JPS5898974A (ja) 1981-12-09 1981-12-09 縦型ｍｉｓ―ｆｅｔ

Country Status (1)

Country Link
JP (1) JPS5898974A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6076168A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置作製方法
JPS6076167A (ja) * 1983-10-03 1985-04-30 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型半導体装置
US5283456A (en) * 1992-06-17 1994-02-01 International Business Machines Corporation Vertical gate transistor with low temperature epitaxial channel

Also Published As

Publication number Publication date
JPS5898974A (ja) 1983-06-13

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