JPH0437580B2 - - Google Patents

Info

Publication number
JPH0437580B2
JPH0437580B2 JP56084599A JP8459981A JPH0437580B2 JP H0437580 B2 JPH0437580 B2 JP H0437580B2 JP 56084599 A JP56084599 A JP 56084599A JP 8459981 A JP8459981 A JP 8459981A JP H0437580 B2 JPH0437580 B2 JP H0437580B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56084599A
Other versions
JPS57199221A (en
Inventor
Yoshitaka Sasaki
Koichi Kanzaki
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Priority to JP56084599A priority Critical patent/JPH0437580B2/ja
Publication of JPS57199221A publication Critical patent/JPS57199221A/ja
Publication of JPH0437580B2 publication Critical patent/JPH0437580B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843Source or drain regions of field-effect devices
    • H01L29/0847Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725Source or drain electrodes for field effect devices
    • H01L29/41775Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234Bipolar junction transistors [BJT]
    • H01L29/66272Silicon vertical transistors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/6656Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568Lateral single gate silicon transistors
    • H01L29/66575Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
JP56084599A 1981-06-02 1981-06-02 Expired - Lifetime JPH0437580B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56084599A JPH0437580B2 (ja) 1981-06-02 1981-06-02

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP56084599A JPH0437580B2 (ja) 1981-06-02 1981-06-02
EP82104717A EP0066280B1 (en) 1981-06-02 1982-05-28 Method for manufacturing semiconductor device
DE8282104717T DE3278181D1 (en) 1981-06-02 1982-05-28 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS57199221A JPS57199221A (en) 1982-12-07
JPH0437580B2 true JPH0437580B2 (ja) 1992-06-19

Family

ID=13835142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56084599A Expired - Lifetime JPH0437580B2 (ja) 1981-06-02 1981-06-02

Country Status (3)

Country Link
EP (1) EP0066280B1 (ja)
JP (1) JPH0437580B2 (ja)
DE (1) DE3278181D1 (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0530051B2 (ja) * 1982-08-20 1993-05-07 Hitachi Ltd
EP0173953B1 (en) * 1984-08-28 1991-07-17 Kabushiki Kaisha Toshiba Method for manufacturing a semiconductor device having a gate electrode
US4658496A (en) * 1984-11-29 1987-04-21 Siemens Aktiengesellschaft Method for manufacturing VLSI MOS-transistor circuits
GB2178593B (en) * 1985-08-02 1989-07-26 Stc Plc Transistor manufacture
US4784966A (en) * 1987-06-02 1988-11-15 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US5005066A (en) * 1987-06-02 1991-04-02 Texas Instruments Incorporated Self-aligned NPN bipolar transistor built in a double polysilicon CMOS technology
US4774204A (en) * 1987-06-02 1988-09-27 Texas Instruments Incorporated Method for forming self-aligned emitters and bases and source/drains in an integrated circuit
GB2214349B (en) * 1988-01-19 1991-06-26 Standard Microsyst Smc Process for fabricating mos devices
EP0449000B1 (en) * 1990-03-08 2004-08-18 Fujitsu Limited Layer structure having contact hole for fin-shaped capacitors in DRAMS and method of producing the same
JPH08321512A (ja) * 1995-05-25 1996-12-03 Murata Mfg Co Ltd 電界効果トランジスタとその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS57112028A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256514A (en) * 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5563827A (en) * 1978-11-03 1980-05-14 Ibm Method of forming narrow mask opening in silicon substrate
JPS57112028A (en) * 1980-12-29 1982-07-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
EP0066280A2 (en) 1982-12-08
DE3278181D1 (en) 1988-04-07
EP0066280A3 (en) 1985-01-23
JPS57199221A (en) 1982-12-07
EP0066280B1 (en) 1988-03-02

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