JPH0437422B2 - - Google Patents

Info

Publication number
JPH0437422B2
JPH0437422B2 JP57230994A JP23099482A JPH0437422B2 JP H0437422 B2 JPH0437422 B2 JP H0437422B2 JP 57230994 A JP57230994 A JP 57230994A JP 23099482 A JP23099482 A JP 23099482A JP H0437422 B2 JPH0437422 B2 JP H0437422B2
Authority
JP
Japan
Prior art keywords
mask
film
hydrogen
layer
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57230994A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59123840A (ja
Inventor
Takashi Hatano
Takayuki Kato
Masanari Shindo
Shigeru Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Konica Minolta Inc
Original Assignee
Konica Minolta Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Inc filed Critical Konica Minolta Inc
Priority to JP57230994A priority Critical patent/JPS59123840A/ja
Publication of JPS59123840A publication Critical patent/JPS59123840A/ja
Publication of JPH0437422B2 publication Critical patent/JPH0437422B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/88Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof prepared by photographic processes for production of originals simulating relief

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP57230994A 1982-12-29 1982-12-29 露光マスクの製造方法 Granted JPS59123840A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57230994A JPS59123840A (ja) 1982-12-29 1982-12-29 露光マスクの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57230994A JPS59123840A (ja) 1982-12-29 1982-12-29 露光マスクの製造方法

Publications (2)

Publication Number Publication Date
JPS59123840A JPS59123840A (ja) 1984-07-17
JPH0437422B2 true JPH0437422B2 (enrdf_load_stackoverflow) 1992-06-19

Family

ID=16916563

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57230994A Granted JPS59123840A (ja) 1982-12-29 1982-12-29 露光マスクの製造方法

Country Status (1)

Country Link
JP (1) JPS59123840A (enrdf_load_stackoverflow)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5934421B2 (ja) * 1979-11-29 1984-08-22 住友電気工業株式会社 薄膜製造法
JPS57167026A (en) * 1981-04-08 1982-10-14 Mitsubishi Electric Corp Photo mask

Also Published As

Publication number Publication date
JPS59123840A (ja) 1984-07-17

Similar Documents

Publication Publication Date Title
US5556714A (en) Method of treating samples
US5861233A (en) Pattern forming method by imparting hydrogen atoms and selectively depositing metal film
US5413664A (en) Apparatus for preparing a semiconductor device, photo treatment apparatus, pattern forming apparatus and fabrication apparatus
EP0909988A1 (en) Photolithographic processing method
JPH0622222B2 (ja) 光処理装置
KR100433098B1 (ko) 비-클로로플루오로카본, 불소계 화합물을 이용한 비등방성플라즈마 에칭 방법
JPH0682643B2 (ja) 表面処理方法
JPH0437422B2 (enrdf_load_stackoverflow)
JPH0548464B2 (enrdf_load_stackoverflow)
JPS59123839A (ja) 露光マスク素材の製造方法
JPH01200628A (ja) ドライエッチング方法
JPH0629968B2 (ja) パタ−ン形成法
JPS5928158A (ja) 露光マスク素材の製造方法
JP3113040B2 (ja) 半導体装置の製造方法
JPH05283346A (ja) 半導体製造装置
US5342476A (en) Reduction of polycide residues through helium backside pressure control during dry etching
JPS646449B2 (enrdf_load_stackoverflow)
JP2966036B2 (ja) エッチングパターンの形成方法
JP2001077059A (ja) 金属酸化物膜の加工方法
JPS5928159A (ja) 露光マスク及びその素材
JPS5928157A (ja) 露光マスク及びその素材
JPH03155621A (ja) ドライエッチング方法
JPH0794491A (ja) ドライエッチング方法およびドライエッチング処理装置
JP2622188B2 (ja) 薄膜デバイスの微細加工方法
JPH01223733A (ja) 炭化チタン系膜及び窒化チタン系膜のエッチング方法