JPH04373171A - Forming method of semiconductor crystal article - Google Patents

Forming method of semiconductor crystal article

Info

Publication number
JPH04373171A
JPH04373171A JP17575691A JP17575691A JPH04373171A JP H04373171 A JPH04373171 A JP H04373171A JP 17575691 A JP17575691 A JP 17575691A JP 17575691 A JP17575691 A JP 17575691A JP H04373171 A JPH04373171 A JP H04373171A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
formed
si
amorphous
crystal
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17575691A
Inventor
Takeshi Ichikawa
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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Abstract

PURPOSE: To shorten growth time and improve productivity, by growing a crystal region having a single structure wherein position control is performed only in the desired region in a semiconductor element to be formed.
CONSTITUTION: An amorphous semiconductor layer 12 is formed on a non-single crystal substrate 11 whose main component is SiO2. When the semiconductor layer 12 is, e.g. Si, the following are used as the forming method of the amorphous semiconductor layer 12; a reduced pressure CVD method using SiH4 or Si2H6 gas, a plasma CVD method, a sputtering method, an evaporation method, and amorphous Si wherein ions are implated in polycrystalline Si or amorphous silicon. When the semiconductor 12 is dielectrically isolated in an island type, action between elements is not present, and a merit is obtained. A nuclear formation site is formed in a channel region. Crystal 13 having a single structure is grown from the site, and a channel part is formed by using the crystal region having the single structure. Thereby growth time can be shortened, and productivity is improved.
COPYRIGHT: (C)1992,JPO&Japio
JP17575691A 1991-06-21 1991-06-21 Forming method of semiconductor crystal article Pending JPH04373171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17575691A JPH04373171A (en) 1991-06-21 1991-06-21 Forming method of semiconductor crystal article

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17575691A JPH04373171A (en) 1991-06-21 1991-06-21 Forming method of semiconductor crystal article

Publications (1)

Publication Number Publication Date
JPH04373171A true true JPH04373171A (en) 1992-12-25

Family

ID=16001705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17575691A Pending JPH04373171A (en) 1991-06-21 1991-06-21 Forming method of semiconductor crystal article

Country Status (1)

Country Link
JP (1) JPH04373171A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999031719A1 (en) * 1997-12-17 1999-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
US6613613B2 (en) 1994-08-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Thin film type monolithic semiconductor device
WO2004049412A2 (en) * 2002-11-27 2004-06-10 Canon Kabushiki Kaisha Producing method for crystalline thin film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6613613B2 (en) 1994-08-31 2003-09-02 Semiconductor Energy Laboratory Co., Ltd. Thin film type monolithic semiconductor device
WO1999031719A1 (en) * 1997-12-17 1999-06-24 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
US6528397B1 (en) 1997-12-17 2003-03-04 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method of producing the same, apparatus for producing the same, semiconductor device and method of producing the same
US6806498B2 (en) 1997-12-17 2004-10-19 Matsushita Electric Industrial Co., Ltd. Semiconductor thin film, method and apparatus for producing the same, and semiconductor device and method of producing the same
WO2004049412A2 (en) * 2002-11-27 2004-06-10 Canon Kabushiki Kaisha Producing method for crystalline thin film
WO2004049412A3 (en) * 2002-11-27 2004-11-04 Canon Kk Producing method for crystalline thin film

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