JPH0436229B2 - - Google Patents
Info
- Publication number
- JPH0436229B2 JPH0436229B2 JP15838286A JP15838286A JPH0436229B2 JP H0436229 B2 JPH0436229 B2 JP H0436229B2 JP 15838286 A JP15838286 A JP 15838286A JP 15838286 A JP15838286 A JP 15838286A JP H0436229 B2 JPH0436229 B2 JP H0436229B2
- Authority
- JP
- Japan
- Prior art keywords
- glaze
- inorganic powder
- resistance
- silicate glass
- semiconductive inorganic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000843 powder Substances 0.000 claims description 19
- 239000005368 silicate glass Substances 0.000 claims description 11
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052573 porcelain Inorganic materials 0.000 claims description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910001887 tin oxide Inorganic materials 0.000 claims description 4
- 239000000203 mixture Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 230000005611 electricity Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000005299 abrasion Methods 0.000 description 3
- 230000002745 absorbent Effects 0.000 description 3
- 239000002250 absorbent Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000011549 displacement method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Landscapes
- Finishing Walls (AREA)
- Floor Finish (AREA)
Description
〔産業上の利用分野〕
本発明は、静電気の蓄積によるスパーク、電
撃、ゴミやホコリの付着を防止しなければならな
い空間の床や壁等に使用する導電性タイルに関す
る。
〔従来の技術〕
従来、例えばビニル系等の有機高分子系材料で
導電性タイルを形成していた。
〔発明が解決しようとする問題点〕
しかし、有機高分子系材料は耐火性、耐化学薬
品性、耐摩耗性に劣るため、例えば高温環境や有
機溶剤を使用する場所などでは使用できず、汎用
性において欠点があつた。
本発明の目的は、耐火性、耐化学薬品性、耐摩
耗性の全てにおいて優れた特性を有し、しかも、
静電気の蓄積防止に好適な導電性を、たとえ水な
どの液で濡れても確実に維持できる特性を有し、
極めて広範に使用できる導電性タイルを提供する
ことにある。
〔問題点を解決するための手段〕
本発明の特徴構成は、磁器質の板状本体の表面
に、ケイ酸塩ガラス質の釉を備えさせ、前記板状
本体及び釉を非吸水性に形成し、前記釉に半導電
性無機粉体を、一部が加熱溶解すると共に残部が
未溶解の状態で混入したことにあり、その作用効
果は次の通りである。
〔作用〕
つまり、板状本体が磁器質で釉がケイ酸塩ガラ
ス質であり、材料の全てがセラミツクスから成つ
ているから、耐火性、耐化学薬品性及び耐摩耗性
の全てにおいて前述の従来技術よりもはるかに優
れている。
半導電性無機粉体を一部が溶解すると共に残部
が未溶解の状態で釉に混入すると、ケイ酸塩ガラ
ス質の釉でありながら、静電気の蓄積防止に好適
な表面抵抗、例えば、104〜107Ωの表面抵抗を釉
に備えさせることができる。
磁器質の板状本体及びケイ酸塩ガラス質の釉を
いずれも非吸水性にしてあるから、たとえ水など
の液で導電性タイルの表面が濡れても導電性が変
化せず、静電気の蓄積防止に適切な導電性を確実
に維持できる。
〔発明の効果〕
その結果、耐火性、耐化学薬品性、耐摩耗性あ
るいは耐水性などが要求される場所においても、
良好な静電気の蓄積防止を確実に発揮させること
ができ、従来技術では適用できなかつた分野を含
めて広範囲に利用できる、汎用性において極めて
優れた導電性タイルを提供できるようになつた。
〔実施例〕
次に実施例を示す。
第１図に示すように、高温焼成により非吸水性
となる磁器質の材料で形成した板状本体１の表面
に、ケイ酸塩ガラス質の材料で加熱溶融により非
吸水性に形成した釉２を一体的に備えさせ、静電
気の蓄積を防止するためのセラミツク製の導電性
タイルを形成してある。
板状本体１の化学組成を次に例示する。
[Industrial Application Field] The present invention relates to conductive tiles used for floors, walls, etc. of spaces where sparks, electric shocks, and dirt and dust adhesion due to accumulation of static electricity must be prevented. [Prior Art] Conventionally, conductive tiles have been formed from organic polymeric materials such as vinyl. [Problems to be solved by the invention] However, organic polymer materials have poor fire resistance, chemical resistance, and abrasion resistance, so they cannot be used in high-temperature environments or places where organic solvents are used, and are not suitable for general-purpose use. I had a flaw in my sexuality. The purpose of the present invention is to have excellent properties in terms of fire resistance, chemical resistance, and wear resistance, and
It has the property of being able to reliably maintain its conductivity, which is suitable for preventing the accumulation of static electricity, even when wet with liquids such as water.
The object of the present invention is to provide a conductive tile that can be used in a very wide range of applications. [Means for Solving the Problems] The characteristic configuration of the present invention is that a silicate glass glaze is provided on the surface of a porcelain plate-like body, and the plate-like body and the glaze are made non-water absorbent. However, the semiconductive inorganic powder is mixed into the glaze in a state in which a part of the powder is heated and melted while the remaining part remains undissolved, and its effects are as follows. [Function] In other words, since the plate-like body is made of porcelain and the glaze is made of silicate glass, and all the materials are made of ceramics, they are superior to the conventional ones in terms of fire resistance, chemical resistance, and abrasion resistance. Much better than technology. When a part of the semiconductive inorganic powder is dissolved and the rest is mixed into the glaze in an undissolved state, although the glaze is made of silicate glass, it has a surface resistance suitable for preventing the accumulation of static electricity, e.g. 10 4 The glaze can be provided with a surface resistance of ˜10 7 Ω. Both the porcelain plate-like body and the silicate glass glaze are non-water-absorbing, so even if the surface of the conductive tile gets wet with liquid such as water, the conductivity will not change and static electricity will not accumulate. It is possible to reliably maintain appropriate conductivity for prevention. [Effects of the invention] As a result, even in places where fire resistance, chemical resistance, abrasion resistance, water resistance, etc. are required,
It has now become possible to provide an extremely versatile conductive tile that can reliably exhibit good static electricity accumulation prevention and can be used in a wide range of fields, including areas where conventional techniques could not be applied. [Example] Next, an example will be shown. As shown in FIG. 1, a glaze 2 made of a silicate glass material made of a silicate glass material to make it non-water absorbent by heating and melting is formed on the surface of a plate-like body 1 made of a porcelain material that becomes non-water absorbent by high-temperature firing. A ceramic conductive tile is formed to prevent the accumulation of static electricity. The chemical composition of the plate-like main body 1 is illustrated below.
【表】
板状本体１の焼成温度は1200〜1350℃程度であ
る。
釉２の化学組成を次にゼーゲル式で例示する。[Table] The firing temperature of the plate-shaped main body 1 is about 1200 to 1350°C. The chemical composition of glaze 2 will be illustrated next using the Seegel formula.
【表】
尚、上記No.３及び５の釉は、釉表面を艶消しし
たマツト釉にでき、床タイルの場合のスリツプ防
止、又は、照明光の反射防止等に有効である。
釉２の加熱温度は1200〜1350℃程度である。
釉２の厚さは0.2〜0.7mmが、表面抵抗を適切に
し、かつ、不必要に厚くしない上で望ましい。
板状本体１及び釉２は、空気−水置換法による
吸水率測定で吸水率が０％であることが望まし
い。
釉２に半導電性無機粉体を、一部が加熱溶解す
ると共に残部が未溶解の状態で混入し、釉２の表
面抵抗を104〜107Ωにしてある。
半導電性無機粉体は、酸化スズ系や酸化鉄系の
群から選択された一種又は複数種であり、具体例
を次に示す。尚、酸化スズ系では、通常半導電性
無機粉体の混合物を予め仮焼して固溶体とする
が、仮焼を省略してもよい。[Table] The above glazes No. 3 and 5 can be made into a matte glaze with a matte glaze surface, and are effective for preventing slips on floor tiles or preventing reflection of illumination light. The heating temperature of the glaze 2 is about 1200 to 1350°C. The thickness of the glaze 2 is desirably 0.2 to 0.7 mm in order to provide appropriate surface resistance and not make it unnecessarily thick. It is desirable that the plate-like main body 1 and the glaze 2 have a water absorption rate of 0% when measured by an air-water displacement method. A semiconductive inorganic powder is mixed into the glaze 2, with a part of the powder melted by heating and the rest remaining undissolved, so that the surface resistance of the glaze 2 is 10 4 to 10 7 Ω. The semiconductive inorganic powder is one or more types selected from the group of tin oxide and iron oxide, and specific examples thereof are shown below. In the case of tin oxide, a mixture of semiconductive inorganic powders is usually calcined in advance to form a solid solution, but the calcining may be omitted.
次に実験例を示す。
実験 １
下記組成のケイ酸塩ガラス質の釉に対し、下記
組成の半導電性無機粉体の添加率を変化させ、釉
の表面抵抗の変化を調べ、第３図に示す結果を得
た。尚、釉の厚さは0.5mmである。
釉の組成：
（Ｋ，Na）2Ｏ：0.3，CaO：0.4，MgO：0.3，
Al2O3：0.4，SiO2：4.5
半導電性無機粉体の組成：
SnO2：96，Sb2O3：４
上記結果から酸化スズ系の半導電性無機粉体の
添加率を20〜40重量％にすると、適切な表面抵抗
を得られることが判る。
実験 ２
下記組成のケイ酸塩ガラス質の釉に対し、下記
組成の半導電性無機粉体の添加率を変化させ、釉
の表面抵抗の変化を調べ、第４図に示す結果を得
た。尚、釉の厚さは0.4mmである。
釉の組成：
（Ｋ，Na）2Ｏ：0.4，CaO：0.3，MgO：0.3，
Al2O3：0.9，SiO2：4.0
半導電性無機粉体の組成：
Fe2O3：55，Cr2O3：35，TiO2：８，MnO2：
２
上記結果から酸化鉄系の半導電性無機粉体の添
加率を30〜50重量％にすると、適切な表面抵抗を
得られることが判る。
実験 ３
下記組成のケイ酸塩ガラス質の釉に対し、下記
組成の半導電性無機粉体を25重量％添加し、釉の
厚さを変化させ、釉の表面抵抗の変化を調べ、第
５図に示す結果を得た。
釉の組成：
（Ｋ，Na）2Ｏ：0.3，CaO：0.5，MgO：0.2，
Al2O3：0.5，SiO2：5.0
半導電性無機粉体の組成：
SnO2：98，Sb2O3：２
上記結果から釉の厚さを0.2〜0.7mmにすると、
適切な表面抵抗を得られることが判る。
〔別実施例〕
次に別実施例を示す。
釉２に適当な着色や模様を施してもよく、ま
た、タイルは寸法、形状、その他において適当に
選定できる。
タイルの用途や釉２のアースの仕方等は不問で
あり、例えば手術室、可燃性ガスや溶剤の貯蔵
室、化学工場、紙や有機高分子シート等を巻取る
空間、爆発性微粉末を扱う空間、クリーンルー
ム、コンピユータルーム、半導体を扱う空間にお
いて、床、壁、天井などに使用する。
Next, an experimental example will be shown. Experiment 1 The addition rate of semiconductive inorganic powder having the following composition to a silicate glass glaze having the following composition was varied, and changes in the surface resistance of the glaze were investigated, and the results shown in FIG. 3 were obtained. The thickness of the glaze is 0.5mm. Composition of glaze: (K, Na) 2 O: 0.3, CaO: 0.4, MgO: 0.3, Al 2 O 3 : 0.4, SiO 2 : 4.5 Composition of semiconductive inorganic powder: SnO 2 : 96, Sb 2 O 3 :4 From the above results, it can be seen that an appropriate surface resistance can be obtained when the addition rate of the tin oxide semiconductive inorganic powder is 20 to 40% by weight. Experiment 2 The addition rate of semiconductive inorganic powder having the composition shown below was changed to a silicate glass glaze having the composition shown below, and the change in the surface resistance of the glaze was examined, and the results shown in FIG. 4 were obtained. The thickness of the glaze is 0.4mm. Composition of glaze: (K, Na) 2 O: 0.4, CaO: 0.3, MgO: 0.3, Al 2 O 3 : 0.9, SiO 2 : 4.0 Composition of semiconductive inorganic powder: Fe 2 O 3 : 55, Cr 2 O 3 : 35, TiO 2 : 8, MnO 2 :
2 From the above results, it can be seen that an appropriate surface resistance can be obtained when the addition rate of iron oxide semiconductive inorganic powder is 30 to 50% by weight. Experiment 3 25% by weight of semiconductive inorganic powder with the following composition was added to the silicate glass glaze with the following composition, the thickness of the glaze was changed, and changes in the surface resistance of the glaze were investigated. The results shown in the figure were obtained. Composition of glaze: (K, Na) 2 O: 0.3, CaO: 0.5, MgO: 0.2, Al 2 O 3 : 0.5, SiO 2 : 5.0 Composition of semiconductive inorganic powder: SnO 2 : 98, Sb 2 O 3 :2 From the above results, if the glaze thickness is set to 0.2 to 0.7 mm,
It can be seen that an appropriate surface resistance can be obtained. [Another Example] Next, another example will be shown. The glaze 2 may be appropriately colored or patterned, and the tiles may be appropriately selected in terms of size, shape, etc. The purpose of the tile and the method of grounding the glaze 2 do not matter; for example, operating rooms, storage rooms for flammable gases and solvents, chemical factories, spaces where paper or organic polymer sheets are rolled up, and areas where explosive fine powder is handled. Used on floors, walls, ceilings, etc. in spaces, clean rooms, computer rooms, and spaces where semiconductors are handled.
第１図は本発明の実施例を示す斜視図、第２図
は表面抵抗測定法の説明図である。第３図ないし
第５図は実験結果を示すグラフである。
１……板状本体、２……釉。
FIG. 1 is a perspective view showing an embodiment of the present invention, and FIG. 2 is an explanatory diagram of a surface resistance measuring method. Figures 3 to 5 are graphs showing experimental results. 1...Plate body, 2...Glaze.
Claims (1)
ス質の釉２を備えさせ、前記板状本体１及び釉２
を非吸水性に形成し、前記釉２に半導電性無機粉
体を、一部が加熱溶解すると共に残部が未溶解の
状態で混入してある導電性タイル。 ２ 前記釉２の厚さが0.2〜0.7mmである特許請求
の範囲第１項に記載の導電性タイル。 ３ 前記半導電性無機粉体が、酸化スズ系及び酸
化鉄系の群から選択された一種又は複数種から成
る特許請求の範囲第１項又は第２項に記載の導電
性タイル。 ４ 前記釉２の表面抵抗が104〜107Ωである特許
請求の範囲第１項又は第２項に記載の導電性タイ
ル。[Claims] 1. A glaze 2 made of silicate glass is provided on the surface of a plate-like body 1 made of porcelain, and the plate-like body 1 and the glaze 2 are provided with a glaze 2 made of silicate glass.
A conductive tile in which a semiconductive inorganic powder is mixed into the glaze 2 in a state in which a part of the powder is heated and dissolved and the remaining part is undissolved. 2. The conductive tile according to claim 1, wherein the glaze 2 has a thickness of 0.2 to 0.7 mm. 3. The conductive tile according to claim 1 or 2, wherein the semiconductive inorganic powder is one or more selected from the group consisting of tin oxide and iron oxide. 4. The conductive tile according to claim 1 or 2, wherein the glaze 2 has a surface resistance of 10 4 to 10 7 Ω.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15838286A JPS6314952A (en) | 1986-07-04 | 1986-07-04 | Conductive tile |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15838286A JPS6314952A (en) | 1986-07-04 | 1986-07-04 | Conductive tile |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6314952A JPS6314952A (en) | 1988-01-22 |
| JPH0436229B2 true JPH0436229B2 (en) | 1992-06-15 |
Family
ID=15670492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15838286A Granted JPS6314952A (en) | 1986-07-04 | 1986-07-04 | Conductive tile |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6314952A (en) |
-
1986
- 1986-07-04 JP JP15838286A patent/JPS6314952A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6314952A (en) | 1988-01-22 |
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